JPS5863128A - 薄膜半導体の製造方法 - Google Patents

薄膜半導体の製造方法

Info

Publication number
JPS5863128A
JPS5863128A JP56161428A JP16142881A JPS5863128A JP S5863128 A JPS5863128 A JP S5863128A JP 56161428 A JP56161428 A JP 56161428A JP 16142881 A JP16142881 A JP 16142881A JP S5863128 A JPS5863128 A JP S5863128A
Authority
JP
Japan
Prior art keywords
thin film
gas
germanium
hydrogen
film semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56161428A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6157694B2 (enFirst
Inventor
Kazu Yamanaka
山中　計
Takeshi Aragai
新貝　健
Masahiro Hotta
堀田　正裕
Toshio Kamisaka
上坂　外志夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP56161428A priority Critical patent/JPS5863128A/ja
Publication of JPS5863128A publication Critical patent/JPS5863128A/ja
Publication of JPS6157694B2 publication Critical patent/JPS6157694B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
JP56161428A 1981-10-09 1981-10-09 薄膜半導体の製造方法 Granted JPS5863128A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56161428A JPS5863128A (ja) 1981-10-09 1981-10-09 薄膜半導体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56161428A JPS5863128A (ja) 1981-10-09 1981-10-09 薄膜半導体の製造方法

Publications (2)

Publication Number Publication Date
JPS5863128A true JPS5863128A (ja) 1983-04-14
JPS6157694B2 JPS6157694B2 (enFirst) 1986-12-08

Family

ID=15734915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56161428A Granted JPS5863128A (ja) 1981-10-09 1981-10-09 薄膜半導体の製造方法

Country Status (1)

Country Link
JP (1) JPS5863128A (enFirst)

Also Published As

Publication number Publication date
JPS6157694B2 (enFirst) 1986-12-08

Similar Documents

Publication Publication Date Title
US4514437A (en) Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
US5248348A (en) Amorphous silicon solar cell and method for manufacturing the same
EP0166383A2 (en) Continuous deposition of activated process gases
JPS6349751B2 (enFirst)
EP0571632B1 (en) Process for forming a polycrystalline silicon thin film at low temperature
JPH0143449B2 (enFirst)
US5952061A (en) Fabrication and method of producing silicon films
US4702965A (en) Low vacuum silicon thin film solar cell and method of production
US20130008380A1 (en) Apparatus for fabricating ib-iiia-via2 compound semiconductor thin films
Zakariae et al. High performance IWO thin films deposited with a new hybrid technology for solar cell applications
JPS5863128A (ja) 薄膜半導体の製造方法
JP2000273617A (ja) 透明導電膜の製造方法
JPS6146046B2 (enFirst)
JPS5863129A (ja) 薄膜半導体の製造方法
JPS6150372B2 (enFirst)
GB2064867A (en) Amorphous silicon photovoltaic devices
JP2907403B2 (ja) 堆積膜形成装置
JP3007579B2 (ja) シリコン薄膜の製造方法
JP3100668B2 (ja) 光起電力素子の製造方法
JPS639743B2 (enFirst)
JP3634605B2 (ja) 回転電極を用いた薄膜形成方法
JPH0131289B2 (enFirst)
JPS61189625A (ja) 堆積膜形成法
JP2002069616A (ja) アナターゼ型酸化チタン薄膜の製造方法
JPH0536620A (ja) 半導体表面処理方法及び装置