JPS5860501A - Moisture sensor - Google Patents

Moisture sensor

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Publication number
JPS5860501A
JPS5860501A JP56158770A JP15877081A JPS5860501A JP S5860501 A JPS5860501 A JP S5860501A JP 56158770 A JP56158770 A JP 56158770A JP 15877081 A JP15877081 A JP 15877081A JP S5860501 A JPS5860501 A JP S5860501A
Authority
JP
Japan
Prior art keywords
humidity
boron
sintered body
humidity sensor
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56158770A
Other languages
Japanese (ja)
Inventor
松下 安男
浩介 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56158770A priority Critical patent/JPS5860501A/en
Publication of JPS5860501A publication Critical patent/JPS5860501A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発qは湿度センサに関し、特に湿度の測定範囲が広く
、かつ感度、応答性、再現性及び安定性に優れた炭化ケ
イ素系の湿度センサに関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a humidity sensor, and particularly to a silicon carbide humidity sensor that has a wide humidity measurement range and is excellent in sensitivity, responsiveness, reproducibility, and stability.

従来、電気抵抗方式の湿度センサには種種のものが知ら
れている。例えば現状湿度センサの主流である塩化リチ
ウム系のものは、樹脂あるいはガララステープ等の基板
材料の上に塩化リチウムの溶液を塗布又は含浸させたも
のである。この種の湿度センサは、測定湿度範囲が比較
的狭く、又、高湿度の場合には吸湿塩の濃度が希釈して
液滴として垂下し、寿命を短くすること、更に、チリ又
はホコリ等が付着すると吸湿能力が低下すること及び感
度(相対湿度の変化に対する抵抗変化率)が比較的低い
こと等、特性の安定性の面で多くの問題点がみられる。
Conventionally, various kinds of electrical resistance type humidity sensors are known. For example, lithium chloride-based humidity sensors, which are currently the mainstream, are made by coating or impregnating a lithium chloride solution onto a substrate material such as resin or glass tape. This type of humidity sensor has a relatively narrow measuring humidity range, and when the humidity is high, the concentration of hygroscopic salts dilutes and drops as droplets, shortening its lifespan. There are many problems in terms of stability of properties, such as a decrease in moisture absorbing ability and a relatively low sensitivity (rate of change in resistance with respect to changes in relative humidity).

一方、近年においては、小形軽量で取扱いが簡単な半導
体又はアルミナ膜あるいはセラミック半導体を利用した
電気抵抗式の湿度センサが各種開発されている。例えば
シリコンを用いた湿度センサは、ステアタイト基板上に
一対のくし形電極を付け、その上にシリコンを主体とす
る半導体材料を印刷し、高温焼結して抵抗体としたもの
である。
On the other hand, in recent years, various electrical resistance type humidity sensors using semiconductors, alumina films, or ceramic semiconductors have been developed, which are small, lightweight, and easy to handle. For example, a humidity sensor using silicon has a pair of comb-shaped electrodes attached to a steatite substrate, a semiconductor material mainly composed of silicon is printed thereon, and a resistor is formed by high-temperature sintering.

この湿度センサは、精度がやや悪い、寿命が比較的短い
、経時変化がある等、特性の安定性の面で問題がみられ
る。その他セラミック湿度センサとしてMgCr20+
TiO2系、マグネタイトコロイド(Fe304) 、
 ニッケルフェライト(N’FC204) +多孔質A
t、Os及び薄膜S n O2等があり、一部は実用化
されているが、素子によっては低温度での抵抗値が高い
、高湿度でヒステリシスを生じ応答性も悪い、寿命が短
い、製作歩留りが悪い等の問題点を残している。
This humidity sensor has problems in terms of stability of characteristics, such as slightly poor accuracy, relatively short lifespan, and changes over time. MgCr20+ as other ceramic humidity sensor
TiO2 series, magnetite colloid (Fe304),
Nickel ferrite (N'FC204) + porous A
t, Os, and thin film S n O2, and some of them are in practical use, but some devices have high resistance at low temperatures, hysteresis occurs at high humidity, poor response, short lifespan, and manufacturing difficulties. Problems such as poor yield remain.

本発明は、上記した従来技術の現状を考慮してなされた
ものであり、その目的は、これらの問題点を解決し、湿
度の測定範囲が広く、且つ感度。
The present invention has been made in consideration of the above-mentioned current state of the prior art, and its purpose is to solve these problems, widen the measurement range of humidity, and improve sensitivity.

応答性、再現性及び安定性等に優れた新規な湿度センサ
を提供することである。
An object of the present invention is to provide a novel humidity sensor with excellent responsiveness, reproducibility, stability, etc.

本発明につき概説すれば、本発明の湿度センサは、感湿
材料が多孔質炭化ケイ素焼結体であることを特徴とする
電気抵抗式湿度センサであり、当該焼結体は炭化ケイ素
とホウ素及び/又は含ホウ素化合物の1種以上とを含む
多孔質焼結体であるものが好適である。
To summarize the present invention, the humidity sensor of the present invention is an electrical resistance type humidity sensor characterized in that the moisture sensitive material is a porous silicon carbide sintered body, and the sintered body contains silicon carbide, boron, and A porous sintered body containing one or more boron-containing compounds is preferred.

本発明者等は、電気抵抗方式のセラミック湿度センサに
つき、鋭意検討を重ねた結果、炭化ケイ素(SiC)自
体又はそれを主成分とする多孔質焼結体が湿度に対して
敏感に抵抗変化を生じ、しかも湿度センサとしての緒特
性に優れていること、そして特に、主成分の炭化ケイ素
に、素子の焼結と所望の抵抗値を得るための添加物とし
て少量のホウ素及び/又は含ホウ素化合物の1種以上を
含ませることが有効であることを見出して本発明に到達
したものである。
As a result of extensive research into electric resistance type ceramic humidity sensors, the present inventors discovered that silicon carbide (SiC) itself or a porous sintered body containing silicon carbide (SiC) as a main component exhibits resistance changes that are sensitive to humidity. In particular, silicon carbide, which is the main component, contains a small amount of boron and/or a boron-containing compound as an additive to sinter the element and obtain the desired resistance value. The present invention was achieved by discovering that it is effective to include one or more of the following.

本発明における炭化ケイ素は平均粒径2μm以下の市販
品を使用することが適当である。
As the silicon carbide used in the present invention, it is appropriate to use a commercially available product having an average particle size of 2 μm or less.

本発明における含ホウ素化合物は特に限定されないが、
例えば酸化ホウ素(B203)、炭化ホウ素(B、C)
及び窒化ホウ素(BN)等が適当である。
The boron-containing compound in the present invention is not particularly limited, but
For example, boron oxide (B203), boron carbide (B, C)
and boron nitride (BN) are suitable.

本発明において、主成分の炭化ケイ素に添加するホウ素
及び/又は含ホウ素化合物の配合量は、多孔質炭化ケイ
素焼結体全量を基礎と8して、ホウ素に換算してその0
.1〜5重量%とすることが適当である。この量が0.
1重量%未満では焼結が十分に行われず、素子の機械的
強度が弱く、又、5重量%を超えると、添加物の種類に
よっては、素子の低温度における抵抗値が高過ぎ、ある
いは低過ぎて実用計測範囲から外れるため適当ではない
In the present invention, the amount of boron and/or boron-containing compound added to silicon carbide, which is the main component, is based on the total amount of the porous silicon carbide sintered body, and the amount is 0 in terms of boron.
.. A suitable content is 1 to 5% by weight. This amount is 0.
If it is less than 1% by weight, sintering will not be sufficient and the mechanical strength of the device will be weak; if it exceeds 5% by weight, depending on the type of additive, the resistance value of the device at low temperatures may be too high or too low. This is not appropriate as it is too far outside the practical measurement range.

又、本発明における多孔質炭化ケイ素焼結体の相対密度
は60〜90%とすることが適当であり、これが60%
未満では焼結体が素焼状態となって強度が弱く、又、9
0%を超えると焼結体に気孔が少なくなって吸湿作用が
弱く、湿度変化に対する感度が低下する。
Further, it is appropriate that the relative density of the porous silicon carbide sintered body in the present invention is 60 to 90%, and this is 60%.
If it is less than 9, the sintered body will be in a biscuit state and its strength will be weak.
If it exceeds 0%, the sintered body will have fewer pores, the moisture absorption effect will be weak, and the sensitivity to humidity changes will decrease.

本発明における多孔質炭化ケイ素焼結体は、その電気抵
抗率が、添加物の種類によって102〜1010Ωcm
と大幅に異なる。そして、相対湿度の変化に対応して、
その電気抵抗値が大きく変化する。
The porous silicon carbide sintered body in the present invention has an electrical resistivity of 102 to 1010 Ωcm depending on the type of additive.
is significantly different. Then, in response to changes in relative humidity,
Its electrical resistance value changes greatly.

しかしながら、その変化は、添加物及びその量の選択に
よって、相対湿度が、5%RH〜95チRHの範囲にお
いて、その電気抵抗値が、10′〜lO7、特に102
〜106Ωという、電気抵抗式湿度センサにおける実用
計測範囲内で、太きく変化させることができる(後記実
施例参照)。
However, depending on the selection of the additives and their amounts, the electrical resistance value may vary from 10' to 1O7, especially 102
It is possible to make a large change within the practical measurement range of an electrical resistance type humidity sensor of ~106Ω (see examples below).

しかもその応答速度も非常に早く、更に耐久性も優れて
いるという利点を持っている。
Moreover, it has the advantage of extremely fast response speed and excellent durability.

本発明の多孔質焼結体よりなる湿度センサの作製に当っ
ては、炭化ケイ素粉末に、少量の添加物を添加、混合す
るか、又はすることなく、有機結合剤を加えて混合後、
この混合物をプレス成形し、1800〜2100℃の高
温で焼成して、多孔質焼結体(気孔率10〜35%)と
し、この焼結体の両端面の表面層を研削した後切断し、
両端面に金。
In producing the humidity sensor made of the porous sintered body of the present invention, after adding and mixing a small amount of additives to silicon carbide powder, or without mixing, or adding an organic binder,
This mixture is press-molded and fired at a high temperature of 1800 to 2100°C to form a porous sintered body (porosity 10 to 35%), and the surface layer of both end faces of this sintered body is ground and then cut.
Gold on both ends.

銀等の電極を焼付け、更にリード線を取付ける手法を用
いればよい。
A method may be used in which electrodes such as silver are baked and lead wires are attached.

次に、本発明の実施の態様及びその効果を実施例により
説明するが、本発明はこれによりなんら限定されるもの
ではない。
Next, embodiments of the present invention and their effects will be explained using Examples, but the present invention is not limited thereto.

実施例 炭化ケイ素(SiC)粉末(不二見研磨材工業社製、平
均粒径2μm)99重量部と炭化ホウ素(B4C)粉末
(高砂産業社製、平均粒径1μm)1重量部(ホウ素換
算値0.788重量%をそれぞれ秤量混合し、更に有機
結合剤としてシリコーン樹脂のキシレン希釈液(濃度5
0%)を原料混合粉末100g当り20mtの割合で添
加し、攪拌らいかい機を用いて混合を行った。次いで、
この混合物を粒状に整粒した後、金型を用いて1000
kg/Cm2の圧力でプレス成形し、直径5Qmm。
Example 99 parts by weight of silicon carbide (SiC) powder (manufactured by Fujimi Abrasives Industry Co., Ltd., average particle size 2 μm) and 1 part by weight of boron carbide (B4C) powder (manufactured by Takasago Sangyo Co., Ltd., average particle size 1 μm) (calculated as boron) 0.788% by weight of each was weighed and mixed, and a xylene diluted silicone resin solution (concentration 5%) was added as an organic binder.
0%) was added at a rate of 20 mt per 100 g of raw material mixed powder, and mixing was performed using an agitator. Then,
After sizing this mixture into granules, use a mold to
Press molded at a pressure of kg/cm2 and has a diameter of 5Qmm.

厚さ約2mmの円板状とした。この円板状成形体を、真
空ホットプレス装置を用いて真空中(10−3〜10−
’ T、、、、  )で200kg/cm2の荷重をカ
ロえつつ1800〜2100℃の温度で1時間焼成処理
を行った。得られた焼結体は気孔率が10〜35チであ
り、湿分の吸着に適した微細な気孔を有する多孔質焼結
体であった。この焼結体を、両端面の表面層を軽く研削
した後、ダイヤモンドカッタで3mm角のチップ状に切
断し、両端面に銀電極を焼付け、更に、リード線を取付
けて、相対密度65%の多孔質焼結体からなる湿度セン
サを作製した。
It was made into a disk shape with a thickness of about 2 mm. This disk-shaped molded body was prepared in a vacuum using a vacuum hot press device (10-3 to 10-
Firing treatment was performed at a temperature of 1,800 to 2,100° C. for 1 hour while applying a load of 200 kg/cm 2 at a temperature of 1,800 to 2,100° C. The obtained sintered body had a porosity of 10 to 35 cm, and was a porous sintered body having fine pores suitable for adsorbing moisture. After lightly grinding the surface layer on both end faces, this sintered body was cut into 3 mm square chips with a diamond cutter, silver electrodes were baked on both end faces, and lead wires were attached to achieve a relative density of 65%. A humidity sensor made of a porous sintered body was fabricated.

得られた湿度センサにつき、相対湿度と電気抵抗値との
関係を調べた。結果を添付図面に示す。
Regarding the obtained humidity sensor, the relationship between relative humidity and electrical resistance value was investigated. The results are shown in the attached drawings.

すなわち、添付図面は、本実施例で得られた湿度センサ
の25℃における相対湿度(4))(横軸)と電気抵抗
値(2)(縦軸)との関係を示したグラフである。図面
から明らかなように、相対湿度と電気抵抗値との関係は
、5%R,Hの低い湿度から95%R,Hの高い湿度ま
での広い範囲にわたって直線的であり、はぼ全相対湿度
領域にわたって湿度検出が可能である。又、相対湿度の
変化に対する電気抵抗値の変化量は大きく、(103〜
106Ω)、高い感度を有し、更には、素子寸法により
特性の平行移動が可能である。
That is, the attached drawing is a graph showing the relationship between the relative humidity (4) (horizontal axis) and the electrical resistance value (2) (vertical axis) at 25° C. of the humidity sensor obtained in this example. As is clear from the drawing, the relationship between relative humidity and electrical resistance value is linear over a wide range from low humidity of 5%R,H to high humidity of 95%R,H, and almost total relative humidity Humidity detection is possible over the area. In addition, the amount of change in electrical resistance value with respect to changes in relative humidity is large, (103~
106Ω), has high sensitivity, and furthermore, the characteristics can be shifted in parallel depending on the element dimensions.

一方、応答性は、測定温度25℃において、雰囲気の相
対湿度を90%RHから20%RHに変えた時、抵抗値
が平衡に達するまでの時間は約チ 50秒、逆に相対湿度を20RHから90チFt、H△ に変えた時、同じく平衡に達する時間は約45秒で、極
めて短く、湿度に対するセンサの応答速度は非常に速い
ことが分かる。
On the other hand, in terms of responsiveness, when the relative humidity of the atmosphere was changed from 90% RH to 20% RH at a measurement temperature of 25°C, it took about 50 seconds for the resistance value to reach equilibrium; It can be seen that when changing from 90 cm Ft, H△, the time to reach equilibrium is also extremely short, approximately 45 seconds, and the response speed of the sensor to humidity is extremely fast.

更に、各種の耐久性試験を下記の条件で行い、試験前後
の湿度特性を調べた。その結果、温度85C一定の恒温
槽中で素子にAC5Vを連続8700時間印加する高温
負荷寿命試験、60℃。
Furthermore, various durability tests were conducted under the following conditions, and the humidity characteristics before and after the tests were investigated. As a result, a high temperature load life test was conducted in which AC5V was continuously applied to the device for 8,700 hours in a constant temperature bath at a constant temperature of 85C at 60C.

90〜95%RHの雰囲気中で素子にAC5Vを連続8
700時間印加する高温高湿負荷寿命試験及び−10〜
35℃、10〜95チRHの雰囲気中で素子にAC5V
を連続8700時間印加する常温常湿負荷寿命試験等を
行った後の湿度の変化は、1いずれの試験においても±
34RH以下で、はとんど劣化はみられなかった。
Continuously apply 5V AC to the device in an atmosphere of 90 to 95% RH.
High temperature and high humidity load life test for 700 hours and -10~
AC5V applied to the device in an atmosphere of 35℃ and 10 to 95℃RH.
The change in humidity after performing a normal temperature and normal humidity load life test, etc., in which 1.
At 34RH or lower, hardly any deterioration was observed.

以上の特性説明は、添加物として炭化ホウ素(B4C)
を用いた場合であるが、B4C以外のホウ素(B)、酸
化ホウ素(B203)及び窒化ホウ素(BN)を添加物
とする場合においても、B4C全添加した湿度センサと
良く類似した湿度特性。
The above characteristic description uses boron carbide (B4C) as an additive.
However, even when boron (B), boron oxide (B203), and boron nitride (BN) other than B4C are used as additives, the humidity characteristics are very similar to those of the humidity sensor with all B4C added.

応答性及び耐久性を持つことが実験的に確認された。It was experimentally confirmed that it has responsiveness and durability.

以上詳細に説明したように、本発明の湿度センサの感湿
材料は、′多孔質炭化ケイ素焼結体であり、低い湿度か
ら高い湿度までの広い湿度範囲にわたって湿度の測定が
可能であることが分かった。しかも、湿度変化に対する
電気抵抗値の変化が大きく、湿度変化に対する感度が高
い。又、湿度変化に対する応答性が速く、更に、高温、
高湿度条件の下でも特性が安定しており、劣化すること
がないため高い再現性の下で安定した測定ができる。
As explained in detail above, the humidity sensitive material of the humidity sensor of the present invention is a porous silicon carbide sintered body, and it is possible to measure humidity over a wide humidity range from low humidity to high humidity. Do you get it. Furthermore, the electrical resistance value changes greatly with respect to humidity changes, and the sensitivity to humidity changes is high. In addition, the response to humidity changes is fast, and
The characteristics are stable even under high humidity conditions and do not deteriorate, allowing stable measurements with high reproducibility.

したがって、本発明の湿度センサを用いれば、高い再現
性の下で、優れた感度、速い応答性で相対湿度を測定す
ることが可能であり、更には、特性が安定しており長期
間にわたって使用できる等多くの効果が得られる。又、
本発明の湿度センサの製法は安定した特性のものを高い
歩留りで量産が可能であり、製作コストも廉価である利
点を有する。
Therefore, by using the humidity sensor of the present invention, it is possible to measure relative humidity with high reproducibility, excellent sensitivity, and quick response.Furthermore, the characteristics are stable and it can be used for a long period of time. Many effects can be obtained. or,
The manufacturing method of the humidity sensor of the present invention has the advantage that it is possible to mass-produce products with stable characteristics at a high yield, and the manufacturing cost is low.

【図面の簡単な説明】[Brief explanation of the drawing]

Claims (1)

【特許請求の範囲】 1、感湿材料が、多孔質炭化ケイ素焼結体であることを
特徴とする電気抵抗式湿度センサ。 2、 該多孔質炭化ケイ素焼結体は、その相対密度が6
0〜90%であり、電気抵抗率が102〜10102c
mである特許請求の範囲第1項に記載の電気抵抗式湿度
センサ。 3 該多孔質炭化ケイ素焼結体は、ホウ素及び/又は含
ホウ素化合物を含有するものである特許請求の範囲第1
項又は第2項記載の電気抵抗式湿度センサ。 4、 該ホウ素及び/又は゛含ホウ素化合物の含有量は
、ホウ素置換算で0.1〜5重量%である特許請求の範
囲第3項に記載の電気抵抗式湿度センサ。
[Claims] 1. An electrical resistance humidity sensor characterized in that the moisture sensitive material is a porous silicon carbide sintered body. 2. The porous silicon carbide sintered body has a relative density of 6
0-90%, electrical resistivity 102-10102c
The electrical resistance type humidity sensor according to claim 1, which is m. 3. Claim 1, wherein the porous silicon carbide sintered body contains boron and/or a boron-containing compound.
The electrical resistance type humidity sensor according to item 1 or 2. 4. The electrical resistance humidity sensor according to claim 3, wherein the content of the boron and/or the boron-containing compound is 0.1 to 5% by weight in terms of boron substitution.
JP56158770A 1981-10-07 1981-10-07 Moisture sensor Pending JPS5860501A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56158770A JPS5860501A (en) 1981-10-07 1981-10-07 Moisture sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56158770A JPS5860501A (en) 1981-10-07 1981-10-07 Moisture sensor

Publications (1)

Publication Number Publication Date
JPS5860501A true JPS5860501A (en) 1983-04-11

Family

ID=15678955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56158770A Pending JPS5860501A (en) 1981-10-07 1981-10-07 Moisture sensor

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JP (1) JPS5860501A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103196955A (en) * 2013-04-10 2013-07-10 中国人民解放军国防科学技术大学 Silicon carbide nano paper sensor as well as production method and application thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103196955A (en) * 2013-04-10 2013-07-10 中国人民解放军国防科学技术大学 Silicon carbide nano paper sensor as well as production method and application thereof

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