JPS5854642A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5854642A
JPS5854642A JP15324481A JP15324481A JPS5854642A JP S5854642 A JPS5854642 A JP S5854642A JP 15324481 A JP15324481 A JP 15324481A JP 15324481 A JP15324481 A JP 15324481A JP S5854642 A JPS5854642 A JP S5854642A
Authority
JP
Japan
Prior art keywords
pellet
silver paste
groove
loading
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15324481A
Other languages
Japanese (ja)
Inventor
Yuji Matsubara
松原　祐司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15324481A priority Critical patent/JPS5854642A/en
Publication of JPS5854642A publication Critical patent/JPS5854642A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205—Shape
    • H01L2224/32057—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
    • H01L2224/83051—Forming additional members, e.g. dam structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To prevent silver paste from overflowing into the circumference of a pellet at the time of loading the pellet by a method wherein a groove is provided at the place loading the pellet on a pellet loading part and within the range not going over the size of the pellet. CONSTITUTION:A groove 25 is provided at a pellet loading section 12 along the circumference of a pellet 11 and within the range not going over the size of a pellet 11. This configuration prevents the silver paste from collecting in the groove 25 when silver paste is applied because the groove 25 is provided with a recessed section. Next, in loading the pellet 11, all the excessive silver paste are collected in the groove 25. Therefore, the silver paste does not overflow into the circumference of the pellet 11.

Description

【発明の詳細な説明】 本発明はろう材として銀ペースト等の導電性ペース）１
−使用する樹脂封止型半導体装置のペレット搭載部分の
構造に関する。[Detailed Description of the Invention] The present invention provides a conductive paste such as silver paste as a brazing material)1
-Regarding the structure of the pellet mounting portion of the resin-sealed semiconductor device to be used.

従来、銀ペーストによってペレットを搭載する際に、第
１図にその断面図を示すように銀ペースト１４がぺＶブ
ト１１の側面をはい上が）半導体素子やアルミ配縁に到
達してシ冒−Ｆ不良奮起こす事故がしばしば起こり九。Conventionally, when mounting pellets using silver paste, the silver paste 14 crawled up the side of the PVC 11, as shown in the cross-sectional view of FIG. - Accidents caused by F failures often occur.9.

これはぺＶット搭載時に余分な銀ペーストがペレットの
周囲にはみ出すことが原因である。ま九、シ嘗−ト不良
には至らないまでも、ペレット１１の周囲に銀ペースト
１４がはみ出しているとベーク時にそこから発生したガ
スがペレット１１０表面に耐着し、ボンディング不良が
発生したに耐湿性が低下した。This is because excess silver paste protrudes around the pellet when it is loaded onto the pellet. 9. Even if it does not result in a sheet failure, if the silver paste 14 protrudes around the pellet 11, the gas generated from it during baking will adhere to the surface of the pellet 110, causing a bonding failure. Moisture resistance decreased.

本発明の目的はベレット搭載時に銀ペーストがペレット
の周囲にはみ出さない構造を備えた半導体装置を提供し
、上記欠点を解消することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device having a structure in which silver paste does not protrude around the pellet when it is mounted on a pellet, and to eliminate the above-mentioned drawbacks.

上記目的を達成するため本発明は、べＶット搭載部分の
ペレットが搭載される箇所に該ペレットの大きさを越え
ない範囲で溝を設けた仁とｔ−Ｗ徴とする。In order to achieve the above object, the present invention employs a t-w pattern in which grooves are provided in the portion of the V-vet loading portion where the pellets are loaded within a range that does not exceed the size of the pellets.

以下、本発明の実施例を図面を用いて詳細に説明する。Embodiments of the present invention will be described in detail below with reference to the drawings.

第２図は本発明の第１の実施例を示す断面図である（本
発明の説明に必要な部分のみを描いである）。FIG. 2 is a sectional view showing the first embodiment of the present invention (only the parts necessary for explaining the present invention are shown).

ペレッ）１１の大きさ金越えない範囲でその周囲に沿っ
てベレット搭載部分１２に溝２５が設けられである。こ
のような構造にすると、銀ベーストを塗布する際には溝
２５は凹部であるためにこの部分には銀ペーストは溜ま
らず、次にベレット１１ｔ−搭載する際に余分な銀ペー
ストは全て溝２５に溜まるのでペレッ）１１の周囲には
はみ出さなくなる。従って、ベレット側面のはい上が〉
によるシｍ　−）不良は発生しない。また、ベーク時に
発生するガス量が少くなるのでボンブイノブ不良は発生
しないし、耐温性も低下しない。このような溝２５はハ
ーフエツチングによって簡単に形成できる。従来の構造
の樹脂封止型半導体装置と本発明の第１の実施例の構造
を備えた樹脂封止型半導体装置のシ１−ト不良発生率と
ボ／ディ／グ不良発生率ｔ−表１に示す。結果は明らか
に本発明の第１の実施例の万が良かりた。A groove 25 is provided in the pellet mounting portion 12 along the circumference of the pellet within a range that does not exceed the size of the pellet 11. With this structure, when applying the silver base plate, the groove 25 is a concave part, so no silver paste accumulates in this part, and when the next bullet 11t is mounted, all the excess silver paste is removed from the groove 25. Since it accumulates in the area, it does not protrude around Pellet) 11. Therefore, the upper part of the side of the beret is
-) No defects occur. In addition, since the amount of gas generated during baking is reduced, bomb knob defects do not occur and temperature resistance does not deteriorate. Such a groove 25 can be easily formed by half etching. Seat failure rate and body/group failure rate t-table for a resin-sealed semiconductor device with a conventional structure and a resin-sealed semiconductor device with a structure according to the first embodiment of the present invention Shown in 1. The results were clearly better than the first embodiment of the present invention.

第３図は本発明の第２の実Ｎ９１ｔ−示す。これによれ
ば溝２５社複数本設叶られている。この場合はベレット
１１とベレット搭載部分１２との接着装置が強くなる効
果がつけ加わる。FIG. 3 shows a second embodiment N91t of the present invention. According to this report, 25 trenches have been constructed. In this case, there is an added effect that the adhesive device between the pellet 11 and the pellet mounting portion 12 becomes stronger.

１！１ 試料側数：　各Ｚｏｏ（Ｈ■（２４ピンＤＩＰ）銀ペー
スト：　デ、ポｙ＠５５０４ ペレットサイズ：　　５−ｘｓ膳 溝の断面積：　α２−1!1 Number of sample sides: Each Zoo (H ■ (24 pin DIP) silver paste: DE, POY@5504 Pellet size: 5-xs Cross-sectional area of groove: α2-

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の構造の樹脂封止型半導体装置（部分）の
断面図金示す。第２図及び第３図はそれぞれ本発明の第
１及び第２の実施例の樹脂封止型半導体装置（部分）の
断面図を示す。 賞、図において、FIG. 1 shows a cross-sectional view of a resin-sealed semiconductor device (part) having a conventional structure. FIGS. 2 and 3 are sectional views of resin-sealed semiconductor devices (parts) of first and second embodiments of the present invention, respectively. In awards, illustrations,

Claims (1)

【特許請求の範囲】[Claims] 導電性ペーストでペレツ）１接層する半導体装置におい
て、ベレット搭載部分の前記ぺＶットが搭載される箇所
゛に該ペレットの大きさを越えない範囲で溝を設けたこ
とを特徴とする半導体装置。A semiconductor device in which a conductive paste (pellet) is in contact with the semiconductor device, wherein a groove is provided in a portion of the pellet mounting portion where the pellet is mounted, the groove not exceeding the size of the pellet. Device.
JP15324481A 1981-09-28 1981-09-28 Semiconductor device Pending JPS5854642A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15324481A JPS5854642A (en) 1981-09-28 1981-09-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15324481A JPS5854642A (en) 1981-09-28 1981-09-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5854642A true JPS5854642A (en) 1983-03-31

Family

ID=15558204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15324481A Pending JPS5854642A (en) 1981-09-28 1981-09-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5854642A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60179865U (en) * 1984-05-02 1985-11-29 ソ−ド株式会社 Plate capillary column
JPS6232534U (en) * 1985-08-12 1987-02-26

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60179865U (en) * 1984-05-02 1985-11-29 ソ−ド株式会社 Plate capillary column
JPS6232534U (en) * 1985-08-12 1987-02-26

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