JPS5853140A - イオン発生装置 - Google Patents
イオン発生装置Info
- Publication number
- JPS5853140A JPS5853140A JP56151389A JP15138981A JPS5853140A JP S5853140 A JPS5853140 A JP S5853140A JP 56151389 A JP56151389 A JP 56151389A JP 15138981 A JP15138981 A JP 15138981A JP S5853140 A JPS5853140 A JP S5853140A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- anode
- ion
- hollow part
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000002500 ions Chemical class 0.000 claims description 65
- 239000000126 substance Substances 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 2
- OWNRRUFOJXFKCU-UHFFFAOYSA-N Bromadiolone Chemical compound C=1C=C(C=2C=CC(Br)=CC=2)C=CC=1C(O)CC(C=1C(OC2=CC=CC=C2C=1O)=O)C1=CC=CC=C1 OWNRRUFOJXFKCU-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- -1 hydrogen ions Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005315 distribution function Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 238000004157 plasmatron Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Particle Accelerators (AREA)
- Electron Sources, Ion Sources (AREA)
- Electron Tubes For Measurement (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56151389A JPS5853140A (ja) | 1981-09-26 | 1981-09-26 | イオン発生装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56151389A JPS5853140A (ja) | 1981-09-26 | 1981-09-26 | イオン発生装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5853140A true JPS5853140A (ja) | 1983-03-29 |
| JPH0255897B2 JPH0255897B2 (enrdf_load_stackoverflow) | 1990-11-28 |
Family
ID=15517509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56151389A Granted JPS5853140A (ja) | 1981-09-26 | 1981-09-26 | イオン発生装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5853140A (enrdf_load_stackoverflow) |
-
1981
- 1981-09-26 JP JP56151389A patent/JPS5853140A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0255897B2 (enrdf_load_stackoverflow) | 1990-11-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Burdovitsin et al. | Hollow-cathode plasma electron gun for beam generation at forepump gas pressure | |
| US4737688A (en) | Wide area source of multiply ionized atomic or molecular species | |
| Burdovitsin et al. | Expansion of the working range of forevacuum plasma electron sources toward higher pressures | |
| US12051560B2 (en) | Ion gun and ion milling machine | |
| Bacal et al. | Effect of cesium and xenon seeding in negative hydrogen ion sources | |
| JPS5853140A (ja) | イオン発生装置 | |
| JP4029495B2 (ja) | イオン源 | |
| CN114242549A (zh) | 一种采用物质溅射形成等离子体的离子源装置 | |
| JPS59111230A (ja) | イオン発生装置 | |
| JPH10275566A (ja) | イオン源 | |
| JPH0334178B2 (enrdf_load_stackoverflow) | ||
| US5025194A (en) | Vapor and ion source | |
| JP3409881B2 (ja) | Ｒｆ放電型イオン源 | |
| JPS6260788B2 (enrdf_load_stackoverflow) | ||
| JPS58157033A (ja) | イオン発生装置 | |
| JP2586836B2 (ja) | イオン源装置 | |
| JPS58157034A (ja) | イオン発生装置 | |
| JPS586259B2 (ja) | イオン発生装置 | |
| KR960004963B1 (ko) | 이온 유도 스퍼터링(Ion Induced Sputtering)을 이용한 고밀도 플라즈마 생성법과 그 장치 | |
| Keller et al. | Ion sources and implantation systems | |
| Kaufman et al. | Broad‐beam electron source | |
| Lee et al. | Lifetime enhancement of a multicusp ion source for lithography | |
| Rao et al. | A broad beam cold cathode Penning ionization gauge ion source for ion‐beam‐assisted deposition | |
| JPH06338279A (ja) | 電子銃 | |
| Ševarac | An ion source with plasma compression |