JPS5851453U - High voltage transistor - Google Patents
High voltage transistorInfo
- Publication number
- JPS5851453U JPS5851453U JP14736781U JP14736781U JPS5851453U JP S5851453 U JPS5851453 U JP S5851453U JP 14736781 U JP14736781 U JP 14736781U JP 14736781 U JP14736781 U JP 14736781U JP S5851453 U JPS5851453 U JP S5851453U
- Authority
- JP
- Japan
- Prior art keywords
- region
- voltage transistor
- high voltage
- insulating film
- guard
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来例を説明する断面図、第2図は本考案を説
明する断面図である。
主な図番の説明、11はコレクタ領域、12はベース領
域、13はエミッタ領域、14はガード領域、16は第
1絶縁膜、17は第2絶縁膜、18はシールド電極、2
1はフィルド電極である。FIG. 1 is a sectional view illustrating a conventional example, and FIG. 2 is a sectional view illustrating the present invention. Explanation of main figure numbers: 11 is the collector region, 12 is the base region, 13 is the emitter region, 14 is the guard region, 16 is the first insulating film, 17 is the second insulating film, 18 is the shield electrode, 2
1 is a filled electrode.
Claims (1)
ベース領域を囲み前記コレクタ領域にガード領域を設け
た高耐圧トランジスタに於て、前記コレクタ領域表面を
被覆する第1絶縁膜上に前記ガード領域にオーミック接
触したシールド電極を設け、前記第1絶縁膜を被覆する
第2絶縁膜上に前記ベース領域にオーミ、ツク接触し前
記コレクタ領域側に延在するフィールド電極を設けたこ
とを特徴とする高耐圧トランジスタ。In a high voltage transistor including a collector region, a base region, and an emitter region, and a guard region surrounding the base region and providing a guard region in the collector region, an ohmic contact is made with the guard region on a first insulating film covering a surface of the collector region. A high breakdown voltage transistor characterized in that a field electrode is provided on a second insulating film covering the first insulating film, and a field electrode is provided in ohmic contact with the base region and extends toward the collector region. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14736781U JPS5851453U (en) | 1981-10-02 | 1981-10-02 | High voltage transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14736781U JPS5851453U (en) | 1981-10-02 | 1981-10-02 | High voltage transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5851453U true JPS5851453U (en) | 1983-04-07 |
JPH0124938Y2 JPH0124938Y2 (en) | 1989-07-27 |
Family
ID=29940228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14736781U Granted JPS5851453U (en) | 1981-10-02 | 1981-10-02 | High voltage transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5851453U (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50131774A (en) * | 1974-04-05 | 1975-10-18 | ||
JPS516474A (en) * | 1974-07-05 | 1976-01-20 | Hitachi Ltd | Pureenakozono handotaisochi |
-
1981
- 1981-10-02 JP JP14736781U patent/JPS5851453U/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50131774A (en) * | 1974-04-05 | 1975-10-18 | ||
JPS516474A (en) * | 1974-07-05 | 1976-01-20 | Hitachi Ltd | Pureenakozono handotaisochi |
Also Published As
Publication number | Publication date |
---|---|
JPH0124938Y2 (en) | 1989-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5851453U (en) | High voltage transistor | |
JPS5829850U (en) | Composite semiconductor device | |
JPS5846461U (en) | Semiconductor integrated circuit device | |
JPS607610U (en) | gas insulated equipment | |
JPS5846444U (en) | semiconductor equipment | |
JPS60153548U (en) | Lateral transistor | |
JPS58168149U (en) | transistor | |
JPS58124953U (en) | Semiconductor integrated circuit device | |
JPS60125748U (en) | Lateral transistor | |
JPS58182427U (en) | Envelopes for semiconductor devices | |
JPS59128748U (en) | semiconductor equipment | |
JPS5863703U (en) | chip resistor | |
JPS58138355U (en) | Thyristor gate electrode mounting device | |
JPS60166155U (en) | Junction type capacitor | |
JPS58184856U (en) | semiconductor equipment | |
JPS5936265U (en) | Amplification gate thyristor | |
JPS5866654U (en) | Glass packaging type semiconductor device | |
JPS58124966U (en) | High sensitivity thyristor | |
JPS59101449U (en) | semiconductor equipment | |
JPS6138956U (en) | thyristor | |
JPS6120063U (en) | Semiconductor device with built-in resistor | |
JPS59190969U (en) | Rotor for power distributor | |
JPS6016562U (en) | Shock barrier type semiconductor device | |
JPS5941898U (en) | Structure of electroluminescent device | |
JPS59115651U (en) | semiconductor equipment |