JPS5850872A - 固体撮像装置およびその駆動法 - Google Patents

固体撮像装置およびその駆動法

Info

Publication number
JPS5850872A
JPS5850872A JP56149166A JP14916681A JPS5850872A JP S5850872 A JPS5850872 A JP S5850872A JP 56149166 A JP56149166 A JP 56149166A JP 14916681 A JP14916681 A JP 14916681A JP S5850872 A JPS5850872 A JP S5850872A
Authority
JP
Japan
Prior art keywords
transfer
photoelectric conversion
register
region
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56149166A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0322754B2 (enrdf_load_stackoverflow
Inventor
Hiromitsu Shiraki
白木 広光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56149166A priority Critical patent/JPS5850872A/ja
Publication of JPS5850872A publication Critical patent/JPS5850872A/ja
Publication of JPH0322754B2 publication Critical patent/JPH0322754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/153Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP56149166A 1981-09-21 1981-09-21 固体撮像装置およびその駆動法 Granted JPS5850872A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56149166A JPS5850872A (ja) 1981-09-21 1981-09-21 固体撮像装置およびその駆動法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149166A JPS5850872A (ja) 1981-09-21 1981-09-21 固体撮像装置およびその駆動法

Publications (2)

Publication Number Publication Date
JPS5850872A true JPS5850872A (ja) 1983-03-25
JPH0322754B2 JPH0322754B2 (enrdf_load_stackoverflow) 1991-03-27

Family

ID=15469234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56149166A Granted JPS5850872A (ja) 1981-09-21 1981-09-21 固体撮像装置およびその駆動法

Country Status (1)

Country Link
JP (1) JPS5850872A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380119A (en) * 1976-12-24 1978-07-15 Sony Corp Interline type ccd image pickup device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380119A (en) * 1976-12-24 1978-07-15 Sony Corp Interline type ccd image pickup device

Also Published As

Publication number Publication date
JPH0322754B2 (enrdf_load_stackoverflow) 1991-03-27

Similar Documents

Publication Publication Date Title
JPH04505543A (ja) インターライン転送ccdイメージセンサ装置におけるインターレース/非インターレースモードの選択作用
JPS60130274A (ja) 固体撮像装置
US4689687A (en) Charge transfer type solid-state imaging device
JPS6216599B2 (enrdf_load_stackoverflow)
JPH08181300A (ja) 撮像デバイス
JPS62126667A (ja) 固体撮像素子
KR100320890B1 (ko) 고체 촬상 센서
US5256891A (en) CCD electrode structure for image sensors
CN100413084C (zh) 绕行转移面阵电荷耦合器件ccd
TWI278231B (en) Solid-state imaging device, method of producing the same, and camera
JPS5850872A (ja) 固体撮像装置およびその駆動法
JPS6239058A (ja) 固体撮像素子
JPS5850874A (ja) 固体撮像装置およびその駆動法
JPH0337316B2 (enrdf_load_stackoverflow)
JPS6240910B2 (enrdf_load_stackoverflow)
JP3334992B2 (ja) Ccd固体撮像装置および製造方法
JP3100624B2 (ja) 各ピクセルに対して簡易電極構造を備えた非インターレースインターライン転送型ccdイメージセンサ
JPH0661469A (ja) Ccd映像素子
JPH031871B2 (enrdf_load_stackoverflow)
Yagi et al. Monolithic Schottky-barrier infrared image sensor with 71% fill factor
JPS6074475A (ja) 固体撮像素子
JPS5818368Y2 (ja) 固体撮像装置
JPS6148308B2 (enrdf_load_stackoverflow)
JP2560984B2 (ja) 電荷転送型固体撮像装置の撮像部とその駆動方法
JPH0658952B2 (ja) 固体撮像素子