JPS58500634A - 半導体表面上への金属の放射線誘起堆積 - Google Patents
半導体表面上への金属の放射線誘起堆積Info
- Publication number
- JPS58500634A JPS58500634A JP57501693A JP50169382A JPS58500634A JP S58500634 A JPS58500634 A JP S58500634A JP 57501693 A JP57501693 A JP 57501693A JP 50169382 A JP50169382 A JP 50169382A JP S58500634 A JPS58500634 A JP S58500634A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- radiation
- inp
- platinum
- further characterized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 32
- 239000002184 metal Substances 0.000 title claims description 32
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 230000005855 radiation Effects 0.000 title claims description 23
- 150000002739 metals Chemical group 0.000 title claims description 4
- 230000008021 deposition Effects 0.000 title description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 74
- 238000000034 method Methods 0.000 claims description 49
- 229910052697 platinum Inorganic materials 0.000 claims description 37
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 24
- 229910052737 gold Inorganic materials 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 18
- 239000011701 zinc Substances 0.000 claims description 14
- 229910052725 zinc Inorganic materials 0.000 claims description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000012512 characterization method Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims 1
- 230000003993 interaction Effects 0.000 claims 1
- 239000000243 solution Substances 0.000 description 24
- 238000000151 deposition Methods 0.000 description 22
- 239000007864 aqueous solution Substances 0.000 description 12
- 238000001465 metallisation Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000004626 scanning electron microscopy Methods 0.000 description 3
- 238000004627 transmission electron microscopy Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 101100085205 Dictyostelium discoideum ptpB gene Proteins 0.000 description 2
- 229910004042 HAuCl4 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001493 electron microscopy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000006303 photolysis reaction Methods 0.000 description 2
- 230000015843 photosynthesis, light reaction Effects 0.000 description 2
- 101100085204 Caenorhabditis elegans ptp-2 gene Proteins 0.000 description 1
- 241000272201 Columbiformes Species 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910003609 H2PtCl4 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241001363516 Plusia festucae Species 0.000 description 1
- 244000181917 Rubus leucodermis Species 0.000 description 1
- 235000011036 Rubus leucodermis Nutrition 0.000 description 1
- 235000003942 Rubus occidentalis Nutrition 0.000 description 1
- 229910007569 Zn—Au Inorganic materials 0.000 description 1
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 1
- RLNMYVSYJAGLAD-UHFFFAOYSA-N [In].[Pt] Chemical compound [In].[Pt] RLNMYVSYJAGLAD-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- QCDFRRQWKKLIKV-UHFFFAOYSA-M chloroplatinum Chemical compound [Pt]Cl QCDFRRQWKKLIKV-UHFFFAOYSA-M 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010218 electron microscopic analysis Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- -1 krypton ion Chemical class 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WWNBZGLDODTKEM-UHFFFAOYSA-N sulfanylidenenickel Chemical compound [Ni]=S WWNBZGLDODTKEM-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/094—Laser beam treatment of compound devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/14—Schottky barrier contacts
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Toxicology (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/259,428 US4359485A (en) | 1981-05-01 | 1981-05-01 | Radiation induced deposition of metal on semiconductor surfaces |
| US25942812EGB | 1981-05-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58500634A true JPS58500634A (ja) | 1983-04-21 |
| JPH0454372B2 JPH0454372B2 (enExample) | 1992-08-31 |
Family
ID=22984907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57501693A Granted JPS58500634A (ja) | 1981-05-01 | 1982-04-16 | 半導体表面上への金属の放射線誘起堆積 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4359485A (enExample) |
| EP (1) | EP0077814B1 (enExample) |
| JP (1) | JPS58500634A (enExample) |
| CA (1) | CA1186601A (enExample) |
| DE (1) | DE3276746D1 (enExample) |
| GB (1) | GB2097820B (enExample) |
| WO (1) | WO1982003801A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04362178A (ja) * | 1990-12-29 | 1992-12-15 | Abb Patent Gmbh | 完全または部分的被覆金層の製造方法 |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5864368A (ja) * | 1981-10-12 | 1983-04-16 | Inoue Japax Res Inc | 化学メツキ方法 |
| WO1983004269A1 (en) * | 1982-06-01 | 1983-12-08 | Massachusetts Institute Of Technology | Maskless growth of patterned films |
| US4615904A (en) * | 1982-06-01 | 1986-10-07 | Massachusetts Institute Of Technology | Maskless growth of patterned films |
| US4555301A (en) * | 1983-06-20 | 1985-11-26 | At&T Bell Laboratories | Formation of heterostructures by pulsed melting of precursor material |
| US4645687A (en) * | 1983-11-10 | 1987-02-24 | At&T Laboratories | Deposition of III-V semiconductor materials |
| US4496607A (en) * | 1984-01-27 | 1985-01-29 | W. R. Grace & Co. | Laser process for producing electrically conductive surfaces on insulators |
| US4538342A (en) * | 1984-06-15 | 1985-09-03 | At&T Bell Laboratories | Forming platinum contacts to in-based group III-V compound devices |
| EP0168771A1 (de) * | 1984-07-17 | 1986-01-22 | Siemens Aktiengesellschaft | Verfahren zur gezielten Erzeugung von lateralen Dotierungs-gradienten in scheibenförmigen Siliziumkristallen für Halbleiterbauelemente |
| US4649059A (en) * | 1985-05-29 | 1987-03-10 | The United States Of America As Represented By The Secretary Of The Air Force | Photoionization technique for growth of metallic films |
| US4910049A (en) * | 1986-12-15 | 1990-03-20 | International Business Machines Corporation | Conditioning a dielectric substrate for plating thereon |
| US4888203A (en) * | 1987-11-13 | 1989-12-19 | Massachusetts Institute Of Technology | Hydrolysis-induced vapor deposition of oxide films |
| DE3744368C1 (de) * | 1987-12-29 | 1989-08-03 | Schott Glaswerke | Verfahren zur Herstellung von festen optischen Einfach- und Mehrfach-Interferenz-Schichten |
| US5310624A (en) * | 1988-01-29 | 1994-05-10 | Massachusetts Institute Of Technology | Integrated circuit micro-fabrication using dry lithographic processes |
| GB2215122A (en) * | 1988-02-12 | 1989-09-13 | Philips Electronic Associated | A method of forming a quantum dot structure |
| US4938996A (en) * | 1988-04-12 | 1990-07-03 | Ziv Alan R | Via filling by selective laser chemical vapor deposition |
| US4925830A (en) * | 1988-04-14 | 1990-05-15 | Tracer Technologies, Inc. | Laser based method for forming a superconducting oxide layer on various substrates |
| US5015603A (en) * | 1988-06-17 | 1991-05-14 | The United States Of America As Represented By The Secretary Of The Navy | TiW diffusion barrier for AuZn ohmic contact to P-Type InP |
| US5171709A (en) * | 1988-07-25 | 1992-12-15 | International Business Machines Corporation | Laser methods for circuit repair on integrated circuits and substrates |
| US5182230A (en) * | 1988-07-25 | 1993-01-26 | International Business Machines Corporation | Laser methods for circuit repair on integrated circuits and substrates |
| US4888204A (en) * | 1988-09-12 | 1989-12-19 | Hughes Aircraft Company | Photochemical deposition of high purity gold films |
| US5236874A (en) * | 1991-03-08 | 1993-08-17 | Motorola, Inc. | Method for forming a material layer in a semiconductor device using liquid phase deposition |
| JPH05148657A (ja) * | 1991-10-04 | 1993-06-15 | Toyota Central Res & Dev Lab Inc | 光利用めつき液およびめつき方法 |
| US5874011A (en) * | 1996-08-01 | 1999-02-23 | Revise, Inc. | Laser-induced etching of multilayer materials |
| US6674058B1 (en) | 2000-09-20 | 2004-01-06 | Compucyte Corporation | Apparatus and method for focusing a laser scanning cytometer |
| US6937350B2 (en) * | 2001-06-29 | 2005-08-30 | Massachusetts Institute Of Technology | Apparatus and methods for optically monitoring thickness |
| MY184648A (en) * | 2003-12-12 | 2021-04-14 | Lam Res Corp | Method and apparatus for material deposition |
| US7358186B2 (en) * | 2003-12-12 | 2008-04-15 | Lam Research Corporation | Method and apparatus for material deposition in semiconductor fabrication |
| EP2009143B1 (en) * | 2007-05-08 | 2017-08-09 | Imec | Bipolar electroless deposition method |
| EP2406841B1 (en) * | 2009-03-12 | 2019-05-08 | Daimler AG | Platinum phosphide as a cathode catalyst for pemfcs and phosphorous treatment of catalysts for fuel cell |
| ES2447766T3 (es) * | 2009-05-18 | 2014-03-12 | Hewlett-Packard Development Company, L.P. | Suministro remoto de tinta |
| JP2011111355A (ja) * | 2009-11-25 | 2011-06-09 | Ricoh Co Ltd | 薄膜製造方法および薄膜素子 |
| US20110123728A1 (en) * | 2009-11-25 | 2011-05-26 | Ricoh Company, Ltd. | Thin film manufacturing method and thin film element |
| US11932929B2 (en) * | 2017-08-21 | 2024-03-19 | George Edward Parris | Method and materials for creating patterns of carbon and/or other elements on substrates or within liquid or frozen media by directed energy deposition of carbon and other elements |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5092830A (enExample) * | 1973-12-20 | 1975-07-24 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2723919A (en) * | 1951-11-29 | 1955-11-15 | Mildred M Jackson | Photochemical mirroring process |
| US4009297A (en) * | 1974-02-25 | 1977-02-22 | Amp Incorporated | Gold deposition procedures and substrates upon which gold has been deposited |
| US4239789A (en) * | 1979-05-08 | 1980-12-16 | International Business Machines Corporation | Maskless method for electroless plating patterns |
| US4264421A (en) * | 1979-05-30 | 1981-04-28 | Board Of Regents, University Of Texas System | Photocatalytic methods for preparing metallized powders |
| US4273594A (en) * | 1979-10-05 | 1981-06-16 | Bell Telephone Laboratories, Incorporated | Gallium arsenide devices having reduced surface recombination velocity |
| US4321283A (en) * | 1979-10-26 | 1982-03-23 | Mobil Tyco Solar Energy Corporation | Nickel plating method |
| US4297393A (en) * | 1980-02-28 | 1981-10-27 | Rca Corporation | Method of applying thin metal deposits to a substrate |
-
1981
- 1981-05-01 US US06/259,428 patent/US4359485A/en not_active Expired - Lifetime
-
1982
- 1982-04-16 EP EP82901676A patent/EP0077814B1/en not_active Expired
- 1982-04-16 JP JP57501693A patent/JPS58500634A/ja active Granted
- 1982-04-16 DE DE8282901676T patent/DE3276746D1/de not_active Expired
- 1982-04-16 WO PCT/US1982/000478 patent/WO1982003801A1/en not_active Ceased
- 1982-04-19 CA CA000401230A patent/CA1186601A/en not_active Expired
- 1982-04-27 GB GB8212155A patent/GB2097820B/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5092830A (enExample) * | 1973-12-20 | 1975-07-24 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04362178A (ja) * | 1990-12-29 | 1992-12-15 | Abb Patent Gmbh | 完全または部分的被覆金層の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0077814A4 (en) | 1983-09-02 |
| US4359485A (en) | 1982-11-16 |
| GB2097820A (en) | 1982-11-10 |
| EP0077814A1 (en) | 1983-05-04 |
| CA1186601A (en) | 1985-05-07 |
| GB2097820B (en) | 1985-08-14 |
| DE3276746D1 (en) | 1987-08-20 |
| JPH0454372B2 (enExample) | 1992-08-31 |
| WO1982003801A1 (en) | 1982-11-11 |
| EP0077814B1 (en) | 1987-07-15 |
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