DE3276746D1 - Radiation induced deposition of metal on semiconductor surfaces - Google Patents

Radiation induced deposition of metal on semiconductor surfaces

Info

Publication number
DE3276746D1
DE3276746D1 DE8282901676T DE3276746T DE3276746D1 DE 3276746 D1 DE3276746 D1 DE 3276746D1 DE 8282901676 T DE8282901676 T DE 8282901676T DE 3276746 T DE3276746 T DE 3276746T DE 3276746 D1 DE3276746 D1 DE 3276746D1
Authority
DE
Germany
Prior art keywords
metal
radiation induced
semiconductor surfaces
induced deposition
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282901676T
Other languages
German (de)
English (en)
Inventor
Vincent Michael Donnelly
Robert Frank Karlicek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of DE3276746D1 publication Critical patent/DE3276746D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/094—Laser beam treatment of compound devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Toxicology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
DE8282901676T 1981-05-01 1982-04-16 Radiation induced deposition of metal on semiconductor surfaces Expired DE3276746D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/259,428 US4359485A (en) 1981-05-01 1981-05-01 Radiation induced deposition of metal on semiconductor surfaces
PCT/US1982/000478 WO1982003801A1 (en) 1981-05-01 1982-04-16 Radiation induced deposition of metal on semiconductor surfaces

Publications (1)

Publication Number Publication Date
DE3276746D1 true DE3276746D1 (en) 1987-08-20

Family

ID=22984907

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282901676T Expired DE3276746D1 (en) 1981-05-01 1982-04-16 Radiation induced deposition of metal on semiconductor surfaces

Country Status (7)

Country Link
US (1) US4359485A (enExample)
EP (1) EP0077814B1 (enExample)
JP (1) JPS58500634A (enExample)
CA (1) CA1186601A (enExample)
DE (1) DE3276746D1 (enExample)
GB (1) GB2097820B (enExample)
WO (1) WO1982003801A1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864368A (ja) * 1981-10-12 1983-04-16 Inoue Japax Res Inc 化学メツキ方法
WO1983004269A1 (en) * 1982-06-01 1983-12-08 Massachusetts Institute Of Technology Maskless growth of patterned films
US4615904A (en) * 1982-06-01 1986-10-07 Massachusetts Institute Of Technology Maskless growth of patterned films
US4555301A (en) * 1983-06-20 1985-11-26 At&T Bell Laboratories Formation of heterostructures by pulsed melting of precursor material
US4645687A (en) * 1983-11-10 1987-02-24 At&T Laboratories Deposition of III-V semiconductor materials
US4496607A (en) * 1984-01-27 1985-01-29 W. R. Grace & Co. Laser process for producing electrically conductive surfaces on insulators
US4538342A (en) * 1984-06-15 1985-09-03 At&T Bell Laboratories Forming platinum contacts to in-based group III-V compound devices
EP0168771A1 (de) * 1984-07-17 1986-01-22 Siemens Aktiengesellschaft Verfahren zur gezielten Erzeugung von lateralen Dotierungs-gradienten in scheibenförmigen Siliziumkristallen für Halbleiterbauelemente
US4649059A (en) * 1985-05-29 1987-03-10 The United States Of America As Represented By The Secretary Of The Air Force Photoionization technique for growth of metallic films
US4910049A (en) * 1986-12-15 1990-03-20 International Business Machines Corporation Conditioning a dielectric substrate for plating thereon
US4888203A (en) * 1987-11-13 1989-12-19 Massachusetts Institute Of Technology Hydrolysis-induced vapor deposition of oxide films
DE3744368C1 (de) * 1987-12-29 1989-08-03 Schott Glaswerke Verfahren zur Herstellung von festen optischen Einfach- und Mehrfach-Interferenz-Schichten
US5310624A (en) * 1988-01-29 1994-05-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
GB2215122A (en) * 1988-02-12 1989-09-13 Philips Electronic Associated A method of forming a quantum dot structure
US4938996A (en) * 1988-04-12 1990-07-03 Ziv Alan R Via filling by selective laser chemical vapor deposition
US4925830A (en) * 1988-04-14 1990-05-15 Tracer Technologies, Inc. Laser based method for forming a superconducting oxide layer on various substrates
US5015603A (en) * 1988-06-17 1991-05-14 The United States Of America As Represented By The Secretary Of The Navy TiW diffusion barrier for AuZn ohmic contact to P-Type InP
US5171709A (en) * 1988-07-25 1992-12-15 International Business Machines Corporation Laser methods for circuit repair on integrated circuits and substrates
US5182230A (en) * 1988-07-25 1993-01-26 International Business Machines Corporation Laser methods for circuit repair on integrated circuits and substrates
US4888204A (en) * 1988-09-12 1989-12-19 Hughes Aircraft Company Photochemical deposition of high purity gold films
DE4042220C2 (de) * 1990-12-29 1995-02-02 Heraeus Noblelight Gmbh Verfahren zur Herstellung von ganzflächigen oder partiellen Goldschichten
US5236874A (en) * 1991-03-08 1993-08-17 Motorola, Inc. Method for forming a material layer in a semiconductor device using liquid phase deposition
JPH05148657A (ja) * 1991-10-04 1993-06-15 Toyota Central Res & Dev Lab Inc 光利用めつき液およびめつき方法
US5874011A (en) * 1996-08-01 1999-02-23 Revise, Inc. Laser-induced etching of multilayer materials
US6674058B1 (en) 2000-09-20 2004-01-06 Compucyte Corporation Apparatus and method for focusing a laser scanning cytometer
US6937350B2 (en) * 2001-06-29 2005-08-30 Massachusetts Institute Of Technology Apparatus and methods for optically monitoring thickness
MY184648A (en) * 2003-12-12 2021-04-14 Lam Res Corp Method and apparatus for material deposition
US7358186B2 (en) * 2003-12-12 2008-04-15 Lam Research Corporation Method and apparatus for material deposition in semiconductor fabrication
EP2009143B1 (en) * 2007-05-08 2017-08-09 Imec Bipolar electroless deposition method
EP2406841B1 (en) * 2009-03-12 2019-05-08 Daimler AG Platinum phosphide as a cathode catalyst for pemfcs and phosphorous treatment of catalysts for fuel cell
ES2447766T3 (es) * 2009-05-18 2014-03-12 Hewlett-Packard Development Company, L.P. Suministro remoto de tinta
JP2011111355A (ja) * 2009-11-25 2011-06-09 Ricoh Co Ltd 薄膜製造方法および薄膜素子
US20110123728A1 (en) * 2009-11-25 2011-05-26 Ricoh Company, Ltd. Thin film manufacturing method and thin film element
US11932929B2 (en) * 2017-08-21 2024-03-19 George Edward Parris Method and materials for creating patterns of carbon and/or other elements on substrates or within liquid or frozen media by directed energy deposition of carbon and other elements

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2723919A (en) * 1951-11-29 1955-11-15 Mildred M Jackson Photochemical mirroring process
JPS5092830A (enExample) * 1973-12-20 1975-07-24
US4009297A (en) * 1974-02-25 1977-02-22 Amp Incorporated Gold deposition procedures and substrates upon which gold has been deposited
US4239789A (en) * 1979-05-08 1980-12-16 International Business Machines Corporation Maskless method for electroless plating patterns
US4264421A (en) * 1979-05-30 1981-04-28 Board Of Regents, University Of Texas System Photocatalytic methods for preparing metallized powders
US4273594A (en) * 1979-10-05 1981-06-16 Bell Telephone Laboratories, Incorporated Gallium arsenide devices having reduced surface recombination velocity
US4321283A (en) * 1979-10-26 1982-03-23 Mobil Tyco Solar Energy Corporation Nickel plating method
US4297393A (en) * 1980-02-28 1981-10-27 Rca Corporation Method of applying thin metal deposits to a substrate

Also Published As

Publication number Publication date
EP0077814A4 (en) 1983-09-02
US4359485A (en) 1982-11-16
GB2097820A (en) 1982-11-10
EP0077814A1 (en) 1983-05-04
JPS58500634A (ja) 1983-04-21
CA1186601A (en) 1985-05-07
GB2097820B (en) 1985-08-14
JPH0454372B2 (enExample) 1992-08-31
WO1982003801A1 (en) 1982-11-11
EP0077814B1 (en) 1987-07-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee