JPS5848946A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the electrostatic breakdown of a semiconductor element by coating the side surface of a ceramic package, the end surface of internal wiring thereof is exposed, with an insulating film. CONSTITUTION:Polyimide 7 in approximately 10-20mum is printed or applied onto the side surface of the package base body 1, the end surface of internal wiring thereof is exposed. A polyimide film is manufactured in such a manner that polyamide is diluted up to predetermined concentration by the solvent of N methyl-2 pyrrolidone, and a polyamide film is formed, cured at 80, 150 and 250 deg.C in succession and changed into imide. According to this constitution, a body having potential such as a finger and the internal wiring end are isolated by the polyimide film when the device is treated, and the electrostatic breakdown of the element is prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of a semiconductor device, and particularly to a plug, an in,
This invention relates to the external structure of a semiconductor device enclosed in a type of package.

In high-density semiconductor integrated circuits (XC), plug-in type ceramic nodes have internal wiring formed in multiple layers and a large number of connection pins arranged in one or more rows on the bottom surface. A shoe cage is used. Unlike ordinary ceramic cages, the entire internal wiring is not exposed on the top surface of the package, so the bonding pads of internal wiring,
When electroplating gold (Au) etc. on electrode bins and chip stages that are electrically connected to internal wiring,
It is not possible to apply a potential to the part to be plated using normal methods. Therefore, in this package, the end surfaces of the internal wiring formed in multiple layers are exposed on the side surface of the package, and a series of plating electrodes are formed on the side surface in contact with the end surface of each internal wiring. Plating is performed by applying a potential from the electrode to the portion to be plated exposed on the package.

After plating is completed, the plating electrode is scraped off from the side surface of the package to separate the internal wirings individually. Therefore, such a plug -
The inside-type package has a structure in which the end surface of internal wiring is exposed on the side surface, so when handling a semiconductor device formed using the back cage, it is difficult to handle the semiconductor device. A potential is applied to the internal wiring from a fingertip touching the side surface of the package, which often causes electrostatic damage to the semiconductor element. The present invention provides a structure that prevents electrostatic damage to semiconductor devices.

In other words, this patent provides that in a semiconductor device in which a semiconductor element is mounted on a ceramic package with the end surface of internal wiring exposed on the 11th side, the ceramic It is characterized by being provided with a membrane.

The following is a detailed explanation of one example of this BA using diagrams.
I will clarify. Note that FIG. 1 is a schematic side view of a ceramic stage, and FIG. 2 is a perspective view of an embodiment of the present invention.

The schematic side view of FIG. 1 conceptually shows the structure of the ceramic φ stage that constitutes the semiconductor device of the present invention.
In the figure, 1 is a multilayer ceramic board (package board)
, 2 represents internal wiring, 3 represents a through hole, and 4 represents an electrode pin. That is, in this package, as shown in the figure, the end surface of the internal wiring 2 of each layer is exposed to the side surface VC5 of the laminated ceramic substrate 1, which is the base of the package. The IF pole bins 4 arranged on the lower surface of the laminated ceramic substrate 1 are connected to the internal wiring 1II2 through the through holes 3, respectively.
This is electrically connected to this.

Although not shown, a bonding pad region that is part of the internal wiring and a chip stage connected to a specific internal wiring are exposed on the multilayer ceramic substrate 1. Internal wiring, conductive films in through holes, etc. that are not exposed on the surface of the laminated ceramic substrate are usually formed of a metallized layer of tungsten (W), molybdenum (Me), etc., and the areas that are exposed from the substrate. That is, the bonding pad portion (not shown), the chip stage (not shown), and the electrode pins 4 are plated with Au.

In a semiconductor device to which the present invention is applied, a chip such as a semiconductor IC is diced onto a chip stage of a ceramic package as described above, and wiring pads of the semiconductor chip and bonding pads of the internal wiring are bonded together. These are formed by connecting them with wire bonding. Therefore, static electricity breakdown of the element as described above occurs. Figure 2 shows a perspective view of an embodiment of the structure of the present invention for preventing the above-mentioned electrostatic breakdown. Reference numeral 1 represents a laminated ceramic substrate (package base), 4 an electrode pin, 5 a cap, 6 a seal pattern, and 7 an insulating film.

That is, in the structure of the present invention, as shown in FIG. 2, on the side surface of the package base 1 where the end surface (not shown) of the internal wiring is exposed, a layer with a thickness of, for example, 10 to 20 [μm] is placed to cover the side surface. ]
Very high level! A P-edge film 7 made of organic polymer such as polyimide or epoxy is provided6 and the insulating film 7 is formed by a method such as printing or coating. When forming 7 into a package before mounting a semiconductor element, the temperature is about 400 to 430 (℃) for chip dicing and about 330 (℃) for capping until the semiconductor device is completed. Because heating is done,
A polyiodide film having excellent heat resistance is used as the P edge film 7. In addition, core polyimide M is polyamide N-methyl-2
After diluting the desired 11% with a solvent such as pyrrolidone and forming a polyamide film of the desired thickness by printing or coating, for example, 80 (℃), I 50 (℃), 250
The polyamide film is imidized and formed by performing a desired step curing at about [° C.].

Furthermore, when forming the insulating film on the side surface of the package base on which the chip has been mounted and the cap has been attached, the insulating film is used in the usage condition 1i! ! Epoxy resin or the like is often used as an organic polymer membrane that can sufficiently withstand the temperature applied to semiconductor devices at 1K.

As explained above, in a semiconductor device using a plug-in structure package having the structure of the present invention, the end surface of the internal wiring exposed on the side surface of the package is covered with an insulating film having a high supply voltage. Being kidnapped. Therefore, when handling the semiconductor device, the insulating film may be used to separate the end surface of the internal wiring from the object having the same potential as the fingertip. Therefore, electrostatic damage to semiconductor devices is completely prevented.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a plug-in e-type φ ceramic package, and FIG. 2 is a perspective view of an embodiment of the semiconductor device of the present invention. In the figure, 1 is a multilayer ceramic substrate (package base)
, 2 is internal wiring, 3 is through hole, 4 is electrode pin, 5
6 indicates a cap, 6 indicates a seal pattern, and 7 indicates a feed line membrane.枦／斤法, 2-after

Claims (1)

[Claims] In a conductor device in which a semiconductor element is mounted on a ceramic package with the end surface of internal wiring exposed on the side surface, an insulating gap is provided on the side ffi of the ceramic socket cage to cover the side surface of the VC. Semiconductor equipment with special mission.