JPS5848402A - 酸化物半導体素子の電極形成方法 - Google Patents
酸化物半導体素子の電極形成方法Info
- Publication number
- JPS5848402A JPS5848402A JP56145421A JP14542181A JPS5848402A JP S5848402 A JPS5848402 A JP S5848402A JP 56145421 A JP56145421 A JP 56145421A JP 14542181 A JP14542181 A JP 14542181A JP S5848402 A JPS5848402 A JP S5848402A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- oxide semiconductor
- semiconductor element
- ion
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thermistors And Varistors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Electrodes Of Semiconductors (AREA)
- Ceramic Capacitors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56145421A JPS5848402A (ja) | 1981-09-17 | 1981-09-17 | 酸化物半導体素子の電極形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56145421A JPS5848402A (ja) | 1981-09-17 | 1981-09-17 | 酸化物半導体素子の電極形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5848402A true JPS5848402A (ja) | 1983-03-22 |
| JPH0221128B2 JPH0221128B2 (enExample) | 1990-05-11 |
Family
ID=15384855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56145421A Granted JPS5848402A (ja) | 1981-09-17 | 1981-09-17 | 酸化物半導体素子の電極形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5848402A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01287902A (ja) * | 1988-05-13 | 1989-11-20 | Murata Mfg Co Ltd | 正特性サーミスタ |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS513576A (ja) * | 1974-06-27 | 1976-01-13 | Murata Manufacturing Co | Sankabutsuhandotaisoshino denkyokukeiseiho |
| JPS54152145A (en) * | 1978-05-22 | 1979-11-30 | Tdk Electronics Co Ltd | Method of forming electrode for electronic component |
| JPS55152161A (en) * | 1979-05-12 | 1980-11-27 | Murata Mfg Co Ltd | Thermal treatment of copper coating |
-
1981
- 1981-09-17 JP JP56145421A patent/JPS5848402A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS513576A (ja) * | 1974-06-27 | 1976-01-13 | Murata Manufacturing Co | Sankabutsuhandotaisoshino denkyokukeiseiho |
| JPS54152145A (en) * | 1978-05-22 | 1979-11-30 | Tdk Electronics Co Ltd | Method of forming electrode for electronic component |
| JPS55152161A (en) * | 1979-05-12 | 1980-11-27 | Murata Mfg Co Ltd | Thermal treatment of copper coating |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01287902A (ja) * | 1988-05-13 | 1989-11-20 | Murata Mfg Co Ltd | 正特性サーミスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0221128B2 (enExample) | 1990-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3589965A (en) | Bonding an insulator to an insulator | |
| US3477935A (en) | Method of forming thin film resistors by cathodic sputtering | |
| US3847658A (en) | Article of manufacture having a film comprising nitrogen-doped beta tantalum | |
| US3479269A (en) | Method for sputter etching using a high frequency negative pulse train | |
| US3257305A (en) | Method of manufacturing a capacitor by reactive sputtering of tantalum oxide onto a silicon substrate | |
| US2339613A (en) | Selenium rectifier and method of making it | |
| US4065370A (en) | Method of ion plating a thin metallic strip for flashlamp starting | |
| US3499799A (en) | Process for preparing dense,adherent boron nitride films and certain articles of manufacture | |
| WO1993007306A1 (en) | Adherent metal coating for aluminum nitride surfaces | |
| US3325393A (en) | Electrical discharge cleaning and coating process | |
| US3616406A (en) | Preparation of glue layer for bonding gold to a substrate | |
| US2922730A (en) | Method of forming thin films of barium titanate | |
| US6154119A (en) | TI--CR--AL--O thin film resistors | |
| US4803094A (en) | Metallized coating | |
| US2833676A (en) | Metal coated dielectrics and method for producing same | |
| JPS5848402A (ja) | 酸化物半導体素子の電極形成方法 | |
| US3114868A (en) | Electrical article comprising a thin film of barium titanate | |
| US3463715A (en) | Method of cathodically sputtering a layer of silicon having a reduced resistivity | |
| JPS61266568A (ja) | コ−テイング装置 | |
| US2295759A (en) | Capacitor | |
| US3414435A (en) | Process for making boron nitride film capacitors | |
| US3738919A (en) | Technique for adjusting temperature coefficient of resistance of tantalum aluminum alloy films | |
| US3647662A (en) | Technique for the fabrication of hafnium nitride resistor | |
| Mattox | Metallizing ceramics using a gas discharge | |
| US3382100A (en) | Rhenium thin film resistors |