JPS5846685A - High luminance yellow green light emitting diode - Google Patents
High luminance yellow green light emitting diodeInfo
- Publication number
- JPS5846685A JPS5846685A JP56144768A JP14476881A JPS5846685A JP S5846685 A JPS5846685 A JP S5846685A JP 56144768 A JP56144768 A JP 56144768A JP 14476881 A JP14476881 A JP 14476881A JP S5846685 A JPS5846685 A JP S5846685A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- yellow
- green light
- mixed crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 abstract description 19
- 239000006104 solid solution Substances 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 230000010365 information processing Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 210000001215 vagina Anatomy 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は７丁りシ電り装置、光プリンタ、光アイソレー
タ等の情報処理用機器、部品等に使用される高輝度黄緑
色発光ダイオードに関す箒。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to high-intensity yellow-green light emitting diodes used in information processing equipment and parts such as power supply devices, optical printers, and optical isolators.
従来、黄緑色の発光ダイオードはＧ、Ｐ基板上にＧａＰ
（）Ｐｎ接合を形成し、その中に窒素（Ｎ）によるアイ
ソエレクト四エックトツップを形成し、注入され九キャ
リヤがそＯセンタを経由して再結合するときの発光を利
用している。発光色は黄色よシ縁色まで可能であ、９Ｎ
の添加量に応じて緑色（５５５ｍｍ）よ）黄色（５７０
ｍｍ）まで変化すゐ、−光効率はＮ＠加量が大きい程大
と表る。Conventionally, yellow-green light emitting diodes were made using GaP on G and P substrates.
(2) A Pn junction is formed, and an isoelectronic top made of nitrogen (N) is formed therein, and light emission when the injected nine carriers recombine via the O center is utilized. The emitting color can range from yellow to edge color, and 9N
Green (555mm) to yellow (570mm) depending on the amount of
mm) - The optical efficiency appears to be higher as the N@ addition is larger.
また添加量を多くすると発光色は緑色よ５シ黄色側へと
長波長領竣へ移行する。従りて黄色発光ダイオードは緑
色発光ダイオードに比して高輝度に壜る。−例として同
じ形状の素子で試験し九入力電流１１ｃ＊Ｉｆゐ輝度の
違いは第１図に示す頗〈である。Furthermore, when the amount added is increased, the emitted light color shifts from green to yellow to a longer wavelength region. Therefore, yellow light emitting diodes have higher brightness than green light emitting diodes. - As an example, when testing with elements of the same shape, the difference in luminance with nine input currents 11c*If is as shown in FIG.
図は横軸に入力電流を、縦軸に発光光度をとり、曲線ム
により黄色（５７Ｇ＋ａｍ）の場合を、曲線ＢＫより緑
色（５５５ｍｍ）の場合を示した。図かられかるように
黄色は高輝度であるが緑色の輝度は低い。なお縁色発卑
ダイオードはＧ、Ｐ においてはＮｆｉ加はなく、自然
発生的に形成される各種欠ＮＯアイソエレクト＠ＩＬツ
タトツップを利用していゐ・
それ故、情報処理用機器の光源としてみると、黄色発光
ダイオードは十分な輝度があシ適用可能でああが、緑色
発光ダイオードは輝度が不足し、光源を金分に並べ九や
、デバイスの入力電流を多くして不足している輝度を補
なりている。本発明はこの間■を解決するため波長範８
５６０〜５５５ｎｍ付近における緑色発光ダイオードの
低い発光出力を５７０ ｎｍの黄色発光ダイオードの発
光出力と同等の光出力した発光ダイオードを得ることを
目的としている。The figure shows the input current on the horizontal axis and the luminous intensity on the vertical axis, showing the case of yellow (57 G+am) from curve BK and the case of green (555 mm) from curve BK. As can be seen from the figure, yellow has high brightness, but green has low brightness. Note that the fringe color densification diode does not include Nfi in G and P, and uses various naturally occurring NO isoelect @IL tsutatotsups.Therefore, when viewed as a light source for information processing equipment, However, yellow light emitting diodes have sufficient brightness and can be applied, but green light emitting diodes lack brightness, so it is necessary to arrange the light sources in parallel or increase the input current of the device to compensate for the lack of brightness. It has become. The present invention solves the problem (2) in the wavelength range 8.
The object of the present invention is to obtain a light emitting diode that has a light output equivalent to that of a yellow light emitting diode at 570 nm, compared to the low light emitting output of a green light emitting diode in the vicinity of 560 to 555 nm.
このため本発明の高輝度黄緑色発光ダイオードにおいて
は、Ｇ、Ｐ基板の上にＧａＰ０Ｐ１１＆＆を形成し丸角
光ダイオードにおいて、Ｐ Ｍ ｍ層の各動作層にＡｔ
を混入させ、その動作層をＧ、、−。Therefore, in the high brightness yellow-green light emitting diode of the present invention, GaP0P11&& is formed on the G and P substrates, and in the round-angle photodiode, At
, and its operating layer is G,,-.
ムｔ、ＰＩ：Ｄｔｈｌ溶体どし、その混合比Ｘを０．０
１乃至０．５５としたことを特徴とするものである。Mut, PI:Dthl solution, the mixing ratio X is 0.0
1 to 0.55.
以下、添付図面に基づいて本尭明Ｏ実加・例につき詳細
に説明する。Hereinafter, examples will be described in detail based on the accompanying drawings.
第２図に本発明の発光ダイオードの御成を示す。FIG. 2 shows the structure of the light emitting diode of the present invention.
図において符号１は１型のＧ、Ｐ・基板、２はｎ型動作
層、３はＰ型動作層、４はＰ”−Ｇ、Ｐ層、５及び今鉱
オー建ツク電極である。そしてｎ型動作層２及びＰ型動
作層３にはムｔを混入した’ｇ、−ａＡｔ／（但しＸは
０．０１〜α５５）なゐ固溶体を用いている。In the figure, reference numeral 1 is a type 1 G, P substrate, 2 is an n-type operating layer, 3 is a P-type operating layer, 4 is a P''-G, P layer, 5 is an open electrode. For the n-type operation layer 2 and the P-type operation layer 3, a solid solution of 'g, -aAt/ (where X is 0.01 to α55) mixed with Mut is used.
一般にＧ、Ｐ発光ダイオードにおいて、その発光Ｏ出力
を向上させるためＫはアイソエレクト−トラツブとなる
ＮＯ１＆加量をできるだけ多くすればよいヒとが知られ
ている。しかしＮｆ）添加量が多く壜ると発光波長が緑
色から黄色方に移行する。Generally, in G and P light emitting diodes, it is known that in order to improve the light emission output of the light emitting diode, it is sufficient to increase the amount of K and NO1, which serves as an isoelectronic trap, as much as possible. However, when the amount of Nf) added is large, the emission wavelength shifts from green to yellow.
そこで黄色に移行した発光色を緑色の方に戻す九めＫは
Ｇ、Ｐｏｌを制帯幅を広げてやれば良い。本発明はこの
禁制帯幅を広げるためＫＧ、Ｐと金棒固溶するｋｔｐと
Ｏ混晶合金Ｇｔ１−ａＬｓＰ （但しＸは混晶比）を用
いた４０である。そしてその材料は基板をａｔｘｐｒｔ
ｃシて動作層作成Ｏ際に所定の混晶比ＸになるようＫｅ
ｇとＡＬｏ量を制御してつ〈ｐｌそＯ材叫作製Ｏ際ＫＮ
を添加するのであゐ。Therefore, for the ninth K, which returns the emitted light color that has shifted to yellow, to green, it is better to widen the band width of G and Pol. In order to widen this forbidden band width, the present invention uses a ktp and O mixed crystal alloy Gt1-aLsP (where X is the mixed crystal ratio) which is a solid solution of KG and P as a metal rod. And the material is atxprt the board
When creating the active layer, adjust Ke so that the predetermined mixed crystal ratio X is achieved.
By controlling the amount of g and ALo,
Because it adds .
第Ｓ図は動作層であるＧ、、−、ＡＡ、Ｐの混晶比Ｘ（
但しＮを（１〜ｓ ） ｘ １ｏ”ｃｍ−” 含ｔセｌ
ト発光中心波長と０関係を示し、第４図は混晶比１と
禁制帯幅との関係を示し、第５図は混晶比５と発光Ｏ半
値幅との関係を示した奄のである。第５図よシ混晶比Ｘ
が大となるに従って発光中心波長は短かく１にシ、混晶
比が０．０１乃至０１５Ｃ）範囲では５７０ ｍｕｍ乃
至５５５ ａｍとなる。またこの範囲では発光の半値幅
ははｆｆ’！Ｉ’Ｏａｍと良好である。Figure S shows the active layer G, -, AA, P mixed crystal ratio X(
However, N is (1~s) x 1o"cm-" including t cell
Figure 4 shows the relationship between the mixed crystal ratio 1 and the forbidden band width, and Figure 5 shows the relationship between the mixed crystal ratio 5 and the half-width of the emission O. . Figure 5: Mixed crystal ratio
As the value increases, the emission center wavelength decreases to 1, and when the mixed crystal ratio is in the range of 0.01 to 0.15 C), it becomes 570 mm to 555 am. Also, in this range, the half-width of light emission is ff'! I'Oam and good.
’ ”＊’−ｚ’て本゛発明においそ′−１１１！、
晶比＃ｔ−（１０１乃至αＳ’５’どＬ′ソい机と０゛
場合の軸度ｉ第′１岐のデータに沿うて約１″桁嶌くな
る。 ゛なシ本発明の発光ダイオードを作成する際に
、Ｇ、Ｐとムｚｐの゛結゛晶構造は同じ閃亜鉛鉱１であ
り、しかも格”予定□数は＆４’５’１２ム、５．４５
１Ａとほは同一であるので基板と動作層との間には歪は
殆ん”ど生”せず格゛子不整合のｉれはない。壕″九ム
を系′合物半導体は空気中０で゛潮−性番有するが、本
発明では６ｔと固溶体を作−）七いる゛ため混晶比′０
５壕では＊袖上何゛ら問題ｉ表い二
このように動作層をＧｇＰよＪ） Ｇ、、−、ＡＡ、Ｐ
（Ｚ＝α０１〜α３５）に変更することによシ黄色よ
シ緑色重で一度の高い発光ダ身オードを得ることができ
“本。 ′
なおｉ２図において動作層３と電極６との間に形成され
一７ｔＰ”Ｇ、Ｐ層は動作層５′と電極６との接触抵抗
を低下せしめるために設けたもＯである・Ｉｌｌ！６＠
ｌに不発明の発覚ターイオードτ７レイｉ夛成し、原稿
読取シセンサの光源とし、赤白原稿に吋すゐ原稿読取シ
を行ない、白／赤の出力比でゴンドラストを求゛めた結
果である。図は横軸に素子プレイの入力Ｗｔ流を縦軸に
コントラストをとシ、その関係を、曲線ムにょシ中心波
長５５５ｍｍの従来０８色発光ダイオードを、曲＠Ｂに
より中心波長８７０ ａｍの従来の黄色発光ダイオード
を、曲＠Ｃによ′ｂ中心波長５６２ ｎｍの本発明品を
それぞれ示しえ。なお鎖線イは実用限界、膣は余裕をみ
こんだ限界を示した。 図よシ、従来
０５５５ｍｍのもので祉輝関が不足し、入力電流がα５
ム以下ではコントラストのｆＩｉｉＩ定が困罐となシ、
５７０ｍｍＣ）４のでは２’ｙトツス）Ｏｗ−ジンが狭
い。これに対し本発明品は光出力が強いため入力電流の
如何Ｋかかわらす余裕をみこんだコンＦツスＦ限界を達
成していることがわがゐ。'``＊'-z' is the real invention'-111!
The crystal ratio #t-(101 to αS'5' to L' is about 1" in line with the data of the axial degree i'1st branch when L' is 0". When making a diode, the crystal structures of G, P and Mzp are the same zinc blende 1, and the planned number is &4'5'12, 5.45
1A, so that almost no strain occurs between the substrate and the active layer, and there is no lattice mismatch. Compound semiconductors based on trenches have a tidal ratio of 0 in air, but in the present invention they form a solid solution with 6t, so the mixed crystal ratio is 0.
In the 5th trench, *Sodegami's problem i Table 2 The operating layer is GgP J) G, , -, AA, P
(Z=α01 to α35), it is possible to obtain a high light emitting diode with a yellow to green color. In addition, in Figure i2, there is a gap between the active layer 3 and the electrode 6. The P layer is formed to reduce the contact resistance between the active layer 5' and the electrode 6.Ill! 6@
An uninvented diode τ7 ray i was incorporated in I, used as the light source of the original reading sensor, and the original reading was performed on a red and white original, and the gondolast was determined by the white/red output ratio be. The diagram shows the input Wt current of the element play on the horizontal axis and the contrast on the vertical axis. Show the yellow light emitting diode of the present invention with a center wavelength of 562 nm in the song @C. The dashed line A indicates the practical limit, and the vagina indicates the limit with allowances. As shown in the figure, the conventional 0555mm type lacks a brightness and the input current is α5.
It is difficult to determine the contrast below the
At 570mmC) 4, the 2'y totus) Ow-jin is narrow. On the other hand, since the product of the present invention has a strong optical output, it is possible to achieve the confluence F limit, which allows for a margin regardless of the input current.
以上説明した如く本発明の発光ダイオードは、情報処理
用機器で従来品の緑色のよシ高輝度の光源（例えば読み
取りセンナの光源、光プリンタの光源表示装置）を必要
とする場合に威力を発揮するものである。As explained above, the light emitting diode of the present invention is effective in information processing equipment that requires a light source with higher brightness than the conventional green light source (for example, the light source of a reading sensor, the light source display device of an optical printer). It is something to do.
第１図は黄色及び緑色発光ダイオードの発光光度の入力
電流依存性を示した縮図、＠２ｆ顯は本発明にかかる烏
一度黄緑色発光ダイオードの断面図、第５図社’１ｌＥ
１−エＡＡ、、の混晶比と罷免波長の関係を示した縮図
、第４回は混晶比と禁制帯幅Ｏ＠係を示し丸線図、第５
図は混晶比と発光の半値幅の関係を示し丸線図、＃！６
図は白原稿と赤原槁とのプントラストの比の発光ダイオ
ード発光波長依存性を示した線図である。
１・・・Ｇ、？基板、２・・・ｎ型動作層、５・・・Ｐ
型動作層、４・・・Ｐ”−Ｇ、Ｐ層、５，６・・・オー
ミック電極。
竿１Ｖ″？１
０ ５ １０ １５ ２０ ２５ ３０入
力端子（ＩＩＩΔ）
唱２面
喝３面 第４爾
混晶比＼ 混晶１ヒ＼
唱５フ
混晶比Ｘ
＠６１１Ｊ
素子Ｙレイ人１ｊＴＬ流（Ａ）Fig. 1 is a miniature diagram showing the input current dependence of the luminous intensity of yellow and green light emitting diodes, @2f is a cross-sectional view of the yellow-green light emitting diode according to the present invention, Fig. 5
1-A miniature diagram showing the relationship between the mixed crystal ratio and the rejection wavelength of air AA, Part 4 is a circle diagram showing the relation between the mixed crystal ratio and the forbidden band width O@, Part 5
The figure is a circle diagram showing the relationship between the mixed crystal ratio and the half width of light emission, #! 6
The figure is a diagram showing the dependence of the ratio of Puntolast between a white original and Akahara Masako on a light emitting diode emission wavelength. 1...G,? Substrate, 2...n-type operating layer, 5...P
Mold operation layer, 4...P''-G, P layer, 5, 6... Ohmic electrode. Rod 1V''? 1 0 5 10 15 20 25 30 input terminal (IIIΔ) 2nd side 3rd side 4th mixed crystal ratio＼ Mixed crystal 1hi＼ 5th mixed crystal ratio
Claims (1)
光ダイオードにおいてＰＮｎ層の各動作層にＡｊを混入
させ、その動作層をＧａｔ−ｘＡｔＪｐＯ１！Ｉ溶体と
し、その混合比Ｘをα０１乃至０．３５としたことを特
徴とする高輝度黄緑色発光ダイオード。tG! In a light emitting diode in which a GgPOPn junction is formed on a P substrate, Aj is mixed into each active layer of the PNn layer, and the active layer is Gat-xAtJpO1! 1. A high-brightness yellow-green light emitting diode characterized in that the I solution is used and the mixing ratio X is α01 to 0.35.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56144768A JPS5846685A (en) | 1981-09-16 | 1981-09-16 | High luminance yellow green light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56144768A JPS5846685A (en) | 1981-09-16 | 1981-09-16 | High luminance yellow green light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5846685A true JPS5846685A (en) | 1983-03-18 |
Family
ID=15369958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56144768A Pending JPS5846685A (en) | 1981-09-16 | 1981-09-16 | High luminance yellow green light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5846685A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06283760A (en) * | 1993-03-25 | 1994-10-07 | Shin Etsu Handotai Co Ltd | Semiconductor light emittering device and its manufacture |
-
1981
- 1981-09-16 JP JP56144768A patent/JPS5846685A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06283760A (en) * | 1993-03-25 | 1994-10-07 | Shin Etsu Handotai Co Ltd | Semiconductor light emittering device and its manufacture |
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