JPS5846562Y2 - Koshuyuuhahasatsushinki - Google Patents
KoshuyuuhahasatsushinkiInfo
- Publication number
- JPS5846562Y2 JPS5846562Y2 JP14616175U JP14616175U JPS5846562Y2 JP S5846562 Y2 JPS5846562 Y2 JP S5846562Y2 JP 14616175 U JP14616175 U JP 14616175U JP 14616175 U JP14616175 U JP 14616175U JP S5846562 Y2 JPS5846562 Y2 JP S5846562Y2
- Authority
- JP
- Japan
- Prior art keywords
- oscillation circuit
- frequency oscillation
- circuit
- output
- detection circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Description
【考案の詳細な説明】
本考案は、たとえば1〜100 MHzの高い周波数の
発振出力を生ずる高周波発振器に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high frequency oscillator that generates an oscillation output at a high frequency of, for example, 1 to 100 MHz.
この種の従来装置としては、高周波発振回路の出力を検
波して得られる直流電圧が基準の直流電圧と等しくなる
ように高周波発振回路を制御するものがある。Some conventional devices of this type control a high frequency oscillation circuit so that the DC voltage obtained by detecting the output of the high frequency oscillation circuit is equal to a reference DC voltage.
しかしながら、この従来装置は、温度変化によって検波
回路の特性が変化すると、装置全体としての出力の振幅
も変化するという欠点を有する。However, this conventional device has the disadvantage that when the characteristics of the detection circuit change due to temperature changes, the amplitude of the output of the device as a whole also changes.
本考案の目的は、このような従来装置の問題点を解決し
た高周波発振器を提供することにある。An object of the present invention is to provide a high frequency oscillator that solves the problems of the conventional device.
以下図面によって本考案を説明する。The present invention will be explained below with reference to the drawings.
図は本考案装置を示す電気的接続図である。The figure is an electrical connection diagram showing the device of the present invention.
図において、HOは高い周波数f1の発振出力e。In the figure, HO is the oscillation output e of high frequency f1.
utを生ずる高周波発振回路、Loは低い周波数fまた
とえば1〜10 kHzで高周波発振回路Hoの発振出
力e。Lo is the oscillation output e of the high frequency oscillation circuit Ho at a low frequency f, for example 1 to 10 kHz.
olと同様な波形の信号erを出力する低周波発振回路
、Dl、D2はそれぞれ高周波発振回路HO1低周波発
振回路Loの各出力e。A low frequency oscillation circuit outputs a signal er with a waveform similar to ol, and Dl and D2 are outputs e of a high frequency oscillation circuit HO1 and a low frequency oscillation circuit Lo, respectively.
ut 、erを人力とする検波回路である。This is a detection circuit in which ut and er are manually operated.
ここでは、検波回路DI、D2として、特性のそろった
電界効果トランジスタFET1.FET2を用いたもの
を示した。Here, as the detection circuits DI and D2, field effect transistors FET1. The one using FET2 is shown.
この検波回路D1において、FET1のゲート端子は高
周波発振回路Hoの出力端に接続されドレイン端子は電
源Vに接続されている。In this detection circuit D1, the gate terminal of FET1 is connected to the output terminal of high frequency oscillation circuit Ho, and the drain terminal is connected to power supply V.
また、ソース端子は、コンデンサC1と抵抗R1とでな
る並列回路を介して接地されている。Further, the source terminal is grounded via a parallel circuit consisting of a capacitor C1 and a resistor R1.
検波回路D2において、FET2のゲート端子は低周波
発振回路Loの出力端に接続されドレイン端子は電源■
に接地されている。In the detection circuit D2, the gate terminal of FET2 is connected to the output terminal of the low frequency oscillation circuit Lo, and the drain terminal is connected to the power supply ■
is grounded.
また、ソース端子は、コンテ゛ンサC2と抵抗R2でな
る並列回路を介して接地されている。Further, the source terminal is grounded via a parallel circuit consisting of a capacitor C2 and a resistor R2.
AMPはゲインの大きい増幅回路で、FET、、FET
、、の各ソース端子に現われる検波回路り、、D2の出
力電圧の差e、を入力し、この差電圧edがほは零とな
るように高周波発振回路Hoの出力振幅を制御するもの
である。AMP is an amplification circuit with large gain, and FET, , FET
The difference e between the output voltages of the detection circuits D2 appearing at the source terminals of the detector circuits , , and D2 is inputted, and the output amplitude of the high-frequency oscillation circuit Ho is controlled so that this difference voltage ed becomes zero. .
Tmは出力端子で、この出力端子Tmには高周波発振回
路Hoの出力e。Tm is an output terminal, and this output terminal Tm receives the output e of the high frequency oscillation circuit Ho.
utが現われるようになっている。ut now appears.
このように構成された本考案装置において、高周波発振
回路Hoの出力e。In the device of the present invention configured as described above, the output e of the high frequency oscillation circuit Ho.
utおよび゛このe。uoと同様な波形を有する低周波
発振回路Loの出力erを、たとえば、
eour = E 1sm 2 yr f ter =
E 2s1n 27r f tただし、t:時間
El、E2:発振振幅
とすれば、上記構成から明らかなように、装置が平衡し
た状態ed:Oでは、E、主E2となる。ut and ゛this e. The output er of the low frequency oscillation circuit Lo having a waveform similar to uo is expressed as, for example, eour = E 1sm 2 yr f ter =
E 2s1n 27r f t However, if t is time El and E2 is oscillation amplitude, then as is clear from the above configuration, in the state ed:O where the device is balanced, E is the main E2.
すなわち、高周波発振回路Hoと低周波発振回路Loの
発振振幅E1.E2が等しくなるように本考案装置は動
作する。That is, the oscillation amplitude E1. of the high frequency oscillation circuit Ho and the low frequency oscillation circuit Lo. The device of the present invention operates so that E2 is equal.
出力e。utの発振振幅E1を変えるには、低周波発振
回路LOの発振振幅E2を変えればよい。Output e. To change the oscillation amplitude E1 of ut, it is sufficient to change the oscillation amplitude E2 of the low frequency oscillation circuit LO.
ここで、検波回路D1.D2に特性のそろったFET1
. FET2(例えば周知のデュアル(ペア) FET
など)を用いているので、検波回路り、、D2はほぼ同
様な温度特性を有することとなる。Here, the detection circuit D1. FET1 with the same characteristics as D2
.. FET2 (for example, the well-known dual (pair) FET
etc.), the detection circuits D2 have almost the same temperature characteristics.
また、検波回路り、、D2には同様な波形の電圧e。In addition, a voltage e having a similar waveform is applied to the detection circuit D2.
ut 、erが加えられている。ut and er have been added.
これは、例えば(最も一般的な)正弦波を高周波出力と
したとき低周波側を方形波とすると次のような問題が生
じるからである。This is because, for example, when a sine wave (the most common) is used as a high-frequency output and a square wave is used as the low-frequency side, the following problem will occur.
すなわちよく知られているように、FETは電極間にお
ける内部寄生容量のため低周波側の方形波人力に対して
スパイクを発生しやすい。That is, as is well known, FETs tend to generate spikes due to internal parasitic capacitance between electrodes in response to square wave power on the low frequency side.
一方高周波側は正弦波なので、FETでスパイクは殆ん
ど発生しない。On the other hand, since the high frequency side is a sine wave, almost no spikes occur in the FET.
この結果両者の間に不平衡を生じることになり、しかも
この不平衡は温度の影響を受ける。This results in an imbalance between the two, and this imbalance is influenced by temperature.
前記したように、低周波側の波形を高周波側の波形と同
じ正弦波にすればこの不平衡の発生を防ぐことができる
(三角波などでも可能だが若干複雑になる)。As mentioned above, this unbalance can be prevented by making the waveform on the low frequency side the same sine wave as the waveform on the high frequency side (a triangular wave or the like is also possible, but it will be a little more complicated).
したがって、温度変化があっても、検波回路DI。Therefore, even if there is a temperature change, the detection circuit DI.
D2の出力は同様に変化し、差電圧e、を零にするよう
な出力電圧e。The output of D2 changes similarly, and the output voltage e is such that the differential voltage e becomes zero.
utの大きさは変わらない。すなわち、温度変化があっ
ても、発振振幅E1は発振振幅E2に正確に対応する。The size of ut remains unchanged. That is, even if there is a temperature change, the oscillation amplitude E1 accurately corresponds to the oscillation amplitude E2.
一般に、低周波の発振回路で安定なものは容易に得られ
るので、本考案装置の低周波発振回路り。Generally, a stable low-frequency oscillation circuit can be easily obtained, so the low-frequency oscillation circuit of the device of the present invention is suitable.
としてこのようなものを用いれば、本考案装置全体とし
て、きわめて安定なものとなる。If such a device is used, the entire device of the present invention will be extremely stable.
なお、上記実施例においては、検波回路り、、D2にF
ET、、FET2を用いるようなものを示したか゛、こ
れに限定されるものではない。In addition, in the above embodiment, in the detection circuit, F is connected to D2.
Although an example using ET, FET2 is shown, the present invention is not limited to this.
また、発振出力eOUtの波形として実施例以外のもの
を得るようにしてもよい。Furthermore, a waveform other than that in the embodiment may be obtained as the waveform of the oscillation output eOUTt.
以上説明したように、本考案によれば、温度変化に対し
てきわめて安定な高周波発振器を得ることができ、その
実用上の効果は大である。As explained above, according to the present invention, it is possible to obtain a high frequency oscillator that is extremely stable against temperature changes, and its practical effects are great.
図は本考案の一実施例を示す電気的接続図である。
Ho・・・・・・高周波発振回路、Lo・・・・・・低
周波発振回路、D、、D2・・・・・・検波回路、AM
P・・・・・・増幅回路。The figure is an electrical connection diagram showing an embodiment of the present invention. Ho...High frequency oscillation circuit, Lo...Low frequency oscillation circuit, D, D2...Detection circuit, AM
P...Amplification circuit.
Claims (1)
とする第1検波回路、前記高周波発振回路とほぼ同様な
波形の出力信号を生ずる低周波発振回路、この低周波発
振回路の出力信号を人力とL前記第1検波回路とほぼ同
様な温度特性を有する第2検波回路を具備し、前記第1
検波回路の出力信号と前記第2検波回路の出力信号とが
一定の関係になるように前記高周波発振回路を制御する
ようにした高周波発振器。a high-frequency oscillation circuit, a first detection circuit that uses the output signal of this high-frequency oscillation circuit as human power; a low-frequency oscillation circuit that generates an output signal with a waveform substantially similar to that of the high-frequency oscillation circuit; L includes a second detection circuit having almost the same temperature characteristics as the first detection circuit;
The high frequency oscillator is configured to control the high frequency oscillation circuit so that the output signal of the detection circuit and the output signal of the second detection circuit have a constant relationship.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14616175U JPS5846562Y2 (en) | 1975-10-27 | 1975-10-27 | Koshuyuuhahasatsushinki |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14616175U JPS5846562Y2 (en) | 1975-10-27 | 1975-10-27 | Koshuyuuhahasatsushinki |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5258933U JPS5258933U (en) | 1977-04-28 |
JPS5846562Y2 true JPS5846562Y2 (en) | 1983-10-24 |
Family
ID=28625881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14616175U Expired JPS5846562Y2 (en) | 1975-10-27 | 1975-10-27 | Koshuyuuhahasatsushinki |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5846562Y2 (en) |
-
1975
- 1975-10-27 JP JP14616175U patent/JPS5846562Y2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5258933U (en) | 1977-04-28 |
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