JPS5845193A - エピタキシヤル成長方法 - Google Patents

エピタキシヤル成長方法

Info

Publication number
JPS5845193A
JPS5845193A JP14532581A JP14532581A JPS5845193A JP S5845193 A JPS5845193 A JP S5845193A JP 14532581 A JP14532581 A JP 14532581A JP 14532581 A JP14532581 A JP 14532581A JP S5845193 A JPS5845193 A JP S5845193A
Authority
JP
Japan
Prior art keywords
solution
growth
layer
composition
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14532581A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0139999B2 (cs
Inventor
Kazuo Nakajima
一雄 中嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14532581A priority Critical patent/JPS5845193A/ja
Publication of JPS5845193A publication Critical patent/JPS5845193A/ja
Publication of JPH0139999B2 publication Critical patent/JPH0139999B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/103—Current controlled or induced growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP14532581A 1981-09-14 1981-09-14 エピタキシヤル成長方法 Granted JPS5845193A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14532581A JPS5845193A (ja) 1981-09-14 1981-09-14 エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14532581A JPS5845193A (ja) 1981-09-14 1981-09-14 エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS5845193A true JPS5845193A (ja) 1983-03-16
JPH0139999B2 JPH0139999B2 (cs) 1989-08-24

Family

ID=15382546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14532581A Granted JPS5845193A (ja) 1981-09-14 1981-09-14 エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS5845193A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6065799A (ja) * 1983-09-19 1985-04-15 Fujitsu Ltd 結晶成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6065799A (ja) * 1983-09-19 1985-04-15 Fujitsu Ltd 結晶成長方法

Also Published As

Publication number Publication date
JPH0139999B2 (cs) 1989-08-24

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