JPS5844787A - Semiconductor laser - Google Patents

Abstract

PURPOSE:To obtain a semiconductor laser having no heat distortion or the like generated from the oxidation of a mirror face and a difference in thermal character of a protective film and a laser substrate by a method wherein a high- resistance GaAs single crystal is deposited on the surface becoming the mirror face in a semiconductor laser consisting of a GaAlAs-group material. CONSTITUTION:An N type GaAlAs clad layer 2, a GaAs active layer 3, a P type GaAlAs clad layer 4, and a P type GaAs cap layer 5 are deposited on an N type GaAs substrate 1 by epitaxial growth and a double hetero junction laser substrate 10 is formed. Next, photo etching is applied by using a mixed solution composed of phosphoric acid, hydrogen peroxide and methanol at a ratio of 3:1:1 and a plurality of grooves 11 entering into the substrate 1 from the layer 5 are perforated, then the grooves 11 are used as cleavage faces. After that, high-resistance GaAs is epitaxially grown in the grooves 11 to form protective films 7. The protective films 7 are cleaved from the center lines to split into individual semiconductor lasers. This prevents Aloxidation in GaAlAs by the protective films 7 and also checks heat distortion generated in the substrate 10.

Description

[Detailed description of the invention] The present invention includes a semiconductor relay 11''KMT.

Semiconductor radar is for radar oscillation! I have a mirror picture by Sekikan for the third direction. If this CK ε radar is made of (laAjmu-(#wokumaluminum) system material 14 or Fe, the mul (aktnikum) present in a certain @aAjmu1 is different from the atmosphere in Mitsu--. There is an interlayer that oxidizes when touched, and oxidation causes deterioration.

Therefore, oxidized materials, nitride films, or multilayer films of these materials are used as protective steel. Ti! , to prevent oxidation from forming on the surface of the %f
&picture.

However, 1ira, 81peng, mu1m08, etc. @
Due to the single crystal made of aA/Mu-based material and the single hook characteristics such as island expansion intermittent, thermal distortion occurs in the radar (V% cannot be sufficiently prevented from deterioration).

Well, if the mirror is composed of GaAIA,
Hekikangoho 11! Until the film is formed, a slight oxidation occurs in the crystals (and in Kametsu 1JlK, islands are likely to be generated due to light. Therefore, a crystal cup is formed around the oxidized part, and the layer between the crystals is 2. - The present invention was made in view of the above-mentioned Oma layer.

Examples will be explained below.

The first garden shows an embodiment of the present invention, and in (1), -main- is (
100 Jiil m@a Mu Todo Board 1 (23-4)
The first cladding layer (2), the first cladding layer (2), and the first cladding layer (2) are made up of Evita IIfV members on the one plate (1) in order. layer (7),
The second tatsutu F layer (43 and cap layer (5)
l@Hatakemu I^-16mAs (jlrikum [jl) *
It consists of P-type GaAIA- and pg'@11. (7J is the upper ε growth layer (mirror of 1 to (5) - (6)
The protective film (73 is @r(
Chromium) with 10"sr"Ii degree gold-containing round high resistance Qa
A. Consists of monocyclic crystals. *Since the new safety iron 11 (7) is a high resistance layer, leakage current fIL will occur @VS
.

Next, an embodiment of the method for manufacturing the upper ε semiconductor radar will be explained with reference to Figures 2-C. There are 6 same numbers in the same places as in Figure 1.

The second EA indicates the first step.Il1lGaA-1 plate (1
), the first cladding layer (2), the active layer (3), the second shoe layer (4), and the middle layer (5) are laminated in sequence to form the well-known double layer f''w!l! 1. Prepare the ladle fA board. Figure 1 shows the 21st stock, and the lathe board extends in the perpendicular direction of the paper, and the cap layer jll [l or bQ
For example, by mixing phosphoric acid, supersaponified sulfuric acid, and tsutanoh k in an ill, and using a solution obtained by mixing phosphoric acid, phosphoric acid, phosphoric acid, and phosphoric acid, which are different from IIAII J & 歇口), are used. The new groove 1 noodle is formed to the extent that it connects to the waiting rice of the above-mentioned lathe substrate.

Figure 2C shows the final process, in which high resistance g) g&mus slz Vitaki varsp is grown during the above #4 procedure.
1111 (7) Forming T and cutting at the center of the groove i1〉By performing cleavage along the chain line in Figure 1〉1E
You can get the best semiconductors.

In the new semiconductor lasers, Qhogill (7ba 7J is the conventional !1ids, !111@mulmOs etc.)
llak8aKglaAjAs ill covers the edge 1IiI# of the second cladding layer (2ha4), so G
There is a risk that the mulch in the AlAs will oxidize and the circular saw 1
! 1li(?) and Ray fjk board have exactly the same thermal characteristics, so 11i! 1i (7J by Takeshi Sugi) No thermal distortion will occur inside the radar board. Furthermore, in the semiconductor radar mentioned above, the l-ra play is
)(7), so after the etching process #l1111-
Even if the crystal is oxidized, the part to be rejected will not become a mirror as in the conventional case, and therefore, compared to the conventional case, distortion of the crystal will not occur.

As described above, according to the present invention, it is possible to obtain a semiconductor laser f that is free from thermal distortion caused by the difference in thermal properties between the saponification film and the laser board.

[Brief explanation of the drawing]

It is a cross-sectional view showing an embodiment of the hand-fashioning body of the G-G S1 figure. (61・-biting surface (surface that becomes t-ra surface) ÷ (COCJ Fig. q)

Claims (1)

[Claims] (1) - A semiconductor radar characterized in that a high resistance @aAs single crystal can be deposited between t and - in a semiconductor laser 9 made of an aA/mu1-based material or b'1.