JPS5843590A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS5843590A JPS5843590A JP14132881A JP14132881A JPS5843590A JP S5843590 A JPS5843590 A JP S5843590A JP 14132881 A JP14132881 A JP 14132881A JP 14132881 A JP14132881 A JP 14132881A JP S5843590 A JPS5843590 A JP S5843590A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- xalxas
- projection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000000903 blocking effect Effects 0.000 claims abstract description 16
- 230000002950 deficient Effects 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 8
- 230000010355 oscillation Effects 0.000 abstract description 8
- 238000003486 chemical etching Methods 0.000 abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 230000006735 deficit Effects 0.000 abstract 3
- 239000007788 liquid Substances 0.000 abstract 2
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 241000931705 Cicada Species 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 210000002816 gill Anatomy 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は単−横モード発振が可能なストライプ型二重ヘ
テ・構造の半導体し−ザに−する硫ので□ １
１ □ １ある。[Detailed Description of the Invention] The present invention is a semiconductor with a striped double heterostructure capable of single-transverse mode oscillation.
1 □ There is 1.
活性層をそれよシも禁制帯郷が大きく且つ屈折率が小さ
いキャリア及び光の閉込め層で３挾んだ二。The active layer is surrounded by three carrier and light confinement layers with a large forbidden zone and a small refractive index.
重へテロ構造の半導体レーザは、活性層平面に垂直な方
向に関しては、閉込め層の効果により良好な光及び電流
の閉込めを行うことができる。゛しかし活性層平面に水
平な、方向、即ち横方向１に関しては、屈折率ガイドに
よる導波機竺が形成されておらず、わずかに注入電流分
布に依存した屈ｊ折率の変動によってモードが立ってい
るだけであり、安定なモードはえら、れなり。また、電
流−光出力特性をみるといわゆるキン、りが生じること
が多い。The heavy heterostructure semiconductor laser can effectively confine light and current in the direction perpendicular to the plane of the active layer due to the effect of the confinement layer. However, in the direction horizontal to the plane of the active layer, that is, in the lateral direction 1, no waveguide is formed by the refractive index guide, and the mode is caused by fluctuations in the refractive index that slightly depend on the injection current distribution. It is only standing, and the stable mode is gills and renari. Furthermore, when looking at the current-light output characteristics, so-called "kinkuri" or "golden" often occurs.
そこで、横モードを単一化するために、活性層あるいは
そα近くに導波路を埋込んだストライプ状の半導体レー
ザが従来より各種提案されている。Therefore, in order to unify the transverse mode, various striped semiconductor lasers in which a waveguide is buried in or near the active layer have been proposed.
例えばこの種の従来型の半導体し−ザよりもさらに電流
−先出：力１特性゛の直麺性とモードの安定化°を目的
として活性層内の電−分布を均一化を行つ庭内部電流狭
窄゛型め半導体゛レーザが特願昭５６二４１２７０とし
て本発明者は出願し粋・る。 、 □この半導体
レーザの構造を第１図に示す。 。For example, it is possible to uniformize the electric current distribution in the active layer for the purpose of stabilizing the straightness and mode of the current characteristic of this type of semiconductor device. The present inventor has filed an application for an internal current confinement type semiconductor laser as Japanese Patent Application No. 1982-41270. , □The structure of this semiconductor laser is shown in Figure 1. .
ＭＷと垂直な方向にストライプ状に伸９た溝部８がｎ−
ＧａＡｐ基板ｌ基板ｌ面に形成−され、その、各側面の
端部でストライプ状の欠損部９が生じるようにｐ’−Ｇ
ａｐ−ｘＡｒＡｓ電流阻止層１がｎ−ＧａＡｓ基板ｌＯ
の全面に形成され、その上面にｎ−Ｇａｌ−２ＡＩｘＡ
８閉込め層２、ｎ又はし・形のＧａＡｓ活性層８ 、ｐ
”−Ｇａｌ；ｚＡ１ｘＡｓ閉込め層４及びｐ−ＧａＡｓ
オーミックコンタクト層５が順次形成されているもので
あり、最上層に発振領域に相当する部分上にＶ側電極６
、基板１０上にｎ側型、極７が設けもれている。Grooves 8 extending in a stripe shape in the direction perpendicular to MW are n-
A p'-G layer is formed on the GaAp substrate L surface, and a p'-G
The ap-xArAs current blocking layer 1 is formed on an n-GaAs substrate lO
n-Gal-2AIxA is formed on the entire surface of the
8 confinement layer 2, n or square GaAs active layer 8, p
"-Gal;zA1xAs confinement layer 4 and p-GaAs
Ohmic contact layers 5 are sequentially formed, and a V-side electrode 6 is formed on the top layer on a portion corresponding to the oscillation region.
, an n-side type pole 7 is provided on the substrate 10 and is omitted.
このレーザの特徴は、内部に設けられ７Ｆ！：２本のス
トライプにより、電流狭窄が効果的に行われ″、ス）ラ
イブ間の電流限・正領域の存在により、電流の増加に伴
い電流が中央部に集中することを防ぎ、安定した単一基
本モード動作の範囲が広いことである。The feature of this laser is that it is installed inside 7F! : The two stripes effectively constrict the current, and the presence of the current limiting/positive region between the stripes prevents the current from concentrating in the center as the current increases, resulting in a stable single stripe. One basic mode is that the range of operation is wide.
しかしながらこの構造のし一部には一つの加工上の難点
を残している。すなわち、基板に溝を形成するとき、化
学エツチング法を用いるが、この化学エツチングによっ
て溝の底１□ｉ、、Ｐ部分は一般に凹凸が増加し、もと
の基板よりも平坦性は劣化ｊる。However, this structure still has one difficulty in processing. That is, when forming a groove on a substrate, a chemical etching method is used, but as a result of this chemical etching, the bottom part of the groove 1□i,,P generally becomes more uneven, and the flatness becomes worse than that of the original substrate. .
このためこの上に成長した活性層の平坦性は、他の部分
に較べてわるくなっている。このためにし流の増加につ
ながる。Therefore, the flatness of the active layer grown thereon is poorer than in other parts. This leads to an increase in waste flow.
本発明は上記の欠点を取除くことを可能とした半導体レ
ーザに関するものである。The present invention relates to a semiconductor laser which makes it possible to eliminate the above-mentioned drawbacks.
本発明は、一方向にストラ・イブ状に伸びた凸部を有す
る第１導電型の半導体基板と、前記凸部を有する面上に
形成され且つ前記凸部の両側面の端部において層の一部
が欠損している第２導電型の電流阻止層と、前記電流阻
止層と前記欠損部上に順次積層されな第１導電型の光及
びキ□ャリアの閉込め層と、第１または第２！電型の活
性層と、第２導電型め光及びキャリ、アの閉込め層とを
具備した拳−横モード発振が可能な二重へテロ構造の半
導体レーザーで今る。The present invention provides a semiconductor substrate of a first conductivity type having a convex portion extending in a stripe shape in one direction, and a layer formed on a surface having the convex portion and at the ends of both side surfaces of the convex portion. a current blocking layer of a second conductivity type that is partially defective; a light and carrier confinement layer of a first conductivity type that is not laminated in sequence on the current blocking layer and the defective portion; Second! This semiconductor laser has a double heterostructure capable of fist-transverse mode oscillation, and includes an active layer of a conductive type and a confinement layer of a second conductive type for light, carriers, and a.
以下、本発明を実施例にもとづいて説明する。The present invention will be explained below based on examples.
実施例ｆｌ）
本実施例の半導体レーザの−っは第２図に示すように１
、紙面と垂直な方向にストライプ状に伸びた凸部１８が
ｎ−ＧａＡｓ基板１ｏの上面に形成され、−その各側面
の端部でストライプ状の欠ｍ１１９が生じるように、ｐ
−Ｇａｌ−２ＡｌｘＡｓ電流阻止”層１１゛がｎ −Ｇ
ａＡｓ基板ｌＯの全面に形成され、その上面にｎ−Ｇａ
１．Ａ’１ｘＡｓ閉込め−１２、ｎ又はｐ形Ｑ）ＧａＡ
ｓ活ｉ層１ Ｂ 、’ｐ−Ｇａ１−ｚＡｌｘＡｓ閉込め
層１４′及びｐ−ＧａＡｓオーミックコンタクト層１５
が順次形成されているもの−であり、最上層□に発振領
域に相当する部分上にｐ側電極１６、基板１０にｎ側電
極１７が設けられている。凸部１・８は１μｍ以上の高
さ、電流阻止層１１は階、段状段差部１９の裾から２０
μｍ・以゛上離れた領域でその深さのＡ以下の厚さ、閉
込め層１２、閉。込め層１４及びオーミックコンタクト
層１５は０．５〜１．１＞ ｆｉｍの厚さ、活性層１８
は０．１〜０．８μｍの厚さとするものである。また、
閉込め層１２、活性層１８、閉込め層１４の禁制帯幅及
び屈折率をそれぞれ”ｇｇ＊ Ｅｇｓｅ Ｅｇ４＊ Ｎ
ｌｌ 、Ｎａ ＋Ｎ４とすると、Ｅ ｇ ８ ＜Ｅ ｇ
ｍ ＊ Ｅ ｇ ４ ＃ ＮＩｔ ＞ Ｎ Ｒ＋ Ｎ
４ とするものである。Example fl) In the semiconductor laser of this example, - is 1 as shown in FIG.
, a convex portion 18 extending in a stripe shape in a direction perpendicular to the plane of the paper is formed on the upper surface of the n-GaAs substrate 1o, and - p
-Gal-2AlxAs current blocking layer 11' is n-G
It is formed on the entire surface of the aAs substrate IO, and n-Ga is formed on the top surface.
1. A'1xAs confinement - 12, n or p type Q) GaA
s active i layer 1 B, 'p-Ga1-zAlxAs confinement layer 14' and p-GaAs ohmic contact layer 15
are formed in sequence, and a p-side electrode 16 is provided on the top layer □ on a portion corresponding to the oscillation region, and an n-side electrode 17 is provided on the substrate 10. The height of the convex parts 1 and 8 is 1 μm or more, and the height of the current blocking layer 11 is 20 mm from the bottom of the stepped part 19.
The confinement layer 12 is closed, with a thickness less than or equal to its depth A in areas separated by more than μm. The filling layer 14 and the ohmic contact layer 15 have a thickness of 0.5 to 1.1> fim, and the active layer 18
The thickness is 0.1 to 0.8 μm. Also,
The forbidden band width and refractive index of the confinement layer 12, active layer 18, and confinement layer 14 are respectively "gg* Egse Eg4* N
ll , Na +N4, E g 8 <E g
m * E g 4 # NIt > N R+ N
4.
この構造の半導体レーザは次のようにして作製すること
ができる。まずｎ−ＧａＡｓ基板１０の上面に、フォト
レジストをコートし、露光して巾２〜１０μｍの細長い
ストライプを設け、この膜をマスクとして化学エツチン
グにより１〜８μｍの高さの凸部を形成する。エツチン
グ液としては、例えばリン酸と過酸化水素水の混合液を
用いると良く、凸部の高さはエツチング時間により調整
することができる。この凸部の形成された側の基板の上
にｐ −Ｇａ １−ＸＡＩＸＡｓ電流阻止層１１を液、
相エピタキシ ：ヤル成長法によりｎ−ＧａＡｓ基板ｌ
Ｏ上に形成する。 ・この場合、エピタキシャル成長速
度が凸部で零又は負になること、に起因して、電流阻止
層１１が凸 。A semiconductor laser having this structure can be manufactured as follows. First, the upper surface of the n-GaAs substrate 10 is coated with a photoresist, exposed to light to form elongated stripes with a width of 2 to 10 .mu.m, and using this film as a mask, chemical etching is performed to form convex portions with a height of 1 to 8 .mu.m. As the etching solution, for example, a mixture of phosphoric acid and hydrogen peroxide may be used, and the height of the convex portion can be adjusted by adjusting the etching time. A p-Ga 1-XAIXAs current blocking layer 11 is deposited on the substrate on the side where the convex portion is formed.
Phase epitaxy: N-GaAs substrate l by the phase epitaxy method.
Formed on O. - In this case, the current blocking layer 11 is convex because the epitaxial growth rate becomes zero or negative at the convex portion.
部９両側面の階栓状段差部の蝉部吟より切断され、。Section 9 is cut from the cicada part of the stepped part on both sides.
電流集中領域となる欠損部１９が溝の両側に形成 、
される。次に電流阻止層１１の上面に液相エピタキシャ
ル成長法により、０．．５〜１．５ μｍ＋ｉ’）厚さ
のｎ−Ｇａｌ−２Ａ１ｘＡｓ閉込め層１２．０．１〜０
．８ ｐｍの厚さのｎ又はｐ形のＧ’ａＡｓ活性層１８
．０．５〜ＩＩｔｍの厚さのＰ−Ｇａｌ−ｘＡ１ｘＡｓ
閉込め層１４及びｐ −ＧａＡｓオーミックコンタクト
層１５を順次形成し、最上層にストライプ状にｐ側電極
１６、基板１０にｎ側電極１７を形成して完成する。前
記ｎ−Ｇａ１−ｘＡ１ｘＡａ閉込め層１２は欠損部が生
じない程度の厚さとするものである。Defects 19, which serve as current concentration regions, are formed on both sides of the groove.
be done. Next, the upper surface of the current blocking layer 11 is grown by liquid phase epitaxial growth. ．． 5-1.5 μm+i') thick n-Gal-2A1xAs confinement layer 12.0.1-0
．． 8 pm thick n or p type G'aAs active layer 18
．． P-Gal-xA1xAs with a thickness of 0.5-IItm
A confinement layer 14 and a p-GaAs ohmic contact layer 15 are sequentially formed, a p-side electrode 16 is formed in a stripe pattern on the top layer, and an n-side electrode 17 is formed on the substrate 10 to complete the process. The thickness of the n-Ga1-xA1xAa confinement layer 12 is such that no defects are generated.
実施例（２）
本発明のもう一つの実施例は、基板に形成する凸部の断
面の形を逆台形状とした場合である。それは第８図に示
すようなものであり、図中の各番号は第２図の番号のも
のに対応するものを示す。Embodiment (2) Another embodiment of the present invention is a case in which the cross-section of the convex portion formed on the substrate is an inverted trapezoidal shape. It is as shown in FIG. 8, and each number in the figure corresponds to the number in FIG. 2.
実施例（３）
本発明の他のもう一つの実施例としての第４図は、第２
図と同様台形状の溝を利用するものであるが、活性層が
平坦となるようにエピタキシャル成長させた場合を示す
。Embodiment (3) FIG. 4 as another embodiment of the present invention is a second embodiment of the present invention.
Similar to the figure, trapezoidal grooves are used, but the active layer is epitaxially grown so as to be flat.
この第４図でも、図中の番号は第２図の番号のものに対
応するものを示す。In FIG. 4 as well, the numbers in the figure correspond to those in FIG. 2.
この場合にも溝の形を逆台形としてもよい。In this case as well, the shape of the groove may be an inverted trapezoid.
以上説明した実施例で代表′漬れるような構造の半導体
レーザにおいては、次のような格別に秀れた特徴のある
ものが得られ □
。＊＊＊＊＊−ｒ、ｖ、、＊ｗ６”％ｘ ｙ ？ ７
ｙ ｔ、ｌｒ、ため、もとの基板と同じ平坦度のままで
あり、他の部分はエツチングにより平坦度が劣化してい
る。The semiconductor laser having the structure described in the embodiments described above has the following exceptional features. ＊＊＊＊＊-r, v,, *w6”%x y? 7
Because of yt and lr, the flatness remains the same as the original substrate, and the flatness of other parts has deteriorated due to etching.
したがってこの上部に形成された活性層は基板の平坦性
の影響を受け、発振部分は平坦性がよく、その両側の部
分は平坦性がわるく散乱ロスを増加させるようになって
おり、横モードの安定化に効果がある。Therefore, the active layer formed on top of this is affected by the flatness of the substrate, and the oscillating part has good flatness, while the parts on both sides have poor flatness and increase scattering loss, resulting in transverse mode. It has a stabilizing effect.
さらに本発明の半導体レーザも特願昭５６−４１２７０
の半導体レーザと共通した次のような効果をもつもので
ある。Furthermore, the semiconductor laser of the present invention is also disclosed in Japanese Patent Application No. 56-41270.
It has the following effects in common with other semiconductor lasers.
■内部に設けられた２本のストライプにより、電流狭窄
が行われている。凸部の幅がキャリアの拡散長以下であ
れば２本のストライプ型であっても発振部分が２つに分
離することはなく、発振部分は、凸部に近い活性層の部
分にわたって一様に分布し、出力＆ｉ一本のビームとな
っている。■Current confinement is performed by two stripes provided inside. If the width of the convex part is less than the carrier diffusion length, the oscillation part will not be separated into two even if it is a two-stripe type, and the oscillation part will be uniform over the part of the active layer near the convex part. The output &i is a single beam.
■基板の上に設けられた閉込め層１２は、凸部の上の領
域では中心はど薄くなっているが、導波路を構成してい
、、戸・
■凸部の上面に１）設けられた電流阻止領域によって、
電流の増加に伴い電流が中央部分に集中することを防い
でいる。■The confinement layer 12 provided on the substrate is thinner in the center in the area above the convex part, but forms a waveguide. The current blocking region
This prevents the current from concentrating in the center as the current increases.
このため、発振は、大電流の場合にも安定しているので
、単一基本モード動作の範囲が広（１゜■電流阻止層の
形成は一連の工・ビタキ□シャル工程の一つに含まれる
ので、連続した一回のエピタキシャル成長工程ですむの
で、半導体の内部力；外気に曝されることがない。した
がって素子の信頼性が高く、シかも工程が短いという特
徴がある。For this reason, the oscillation is stable even at large currents, so the range of single fundamental mode operation is wide (1°■ The formation of the current blocking layer is included in a series of engineering and bitaxial processes. Since it only requires one continuous epitaxial growth process, the internal forces of the semiconductor are not exposed to the outside air.Therefore, the device is highly reliable and the process is short.
■さらに、第４図に示すように活性層を平坦となるよう
エピタキシャル成長させた場合、或は基板の凸部の断面
形状が逆台形で活性層を平坦となるようエピタキシャル
成長させた場合には、活性層がわん曲している場合に比
較して、大出力時の光電流特性の直線性がすぐれている
。■Furthermore, if the active layer is epitaxially grown so that it is flat as shown in Figure 4, or if the cross-sectional shape of the convex part of the substrate is an inverted trapezoid and the active layer is epitaxially grown so that it is flat, Compared to the case where the layer is curved, the linearity of the photocurrent characteristics at high output is excellent.
以上の実施例では、電流阻止層がｐ−Ｇａ１−ＸＡＩＸ
Ａｓ（ｘ＝０．８）を用いているが、ｐ−ＧａＡｓを用
１．ｚた場合であっても本発明の効果は明らかに減する
ことはない。In the above embodiments, the current blocking layer is p-Ga1-XAIX
As (x=0.8) is used, but p-GaAs is used.1. Even in such a case, the effects of the present invention are not obviously reduced.
また以上の実施例は、ＧａＡｌＡｓとＧａＡｓとの二重
へテロ接合構造についてのものであるが、他の多元化合
物、例えば１ｎＰとＩｎＧａＡｓＰとの二重ヘテ四接合
を有する半導体発光装置にも、本発明を適用し得ること
は勿論のことである。Furthermore, although the above embodiments are about a double heterojunction structure of GaAlAs and GaAs, the present invention can also be applied to a semiconductor light emitting device having a double heterojunction structure of other multicomponent compounds, such as 1nP and InGaAsP. Of course, the invention can be applied.
第１図は従来のストライプ型二重へテロ構造半導体レー
ザの側断面図、第２図、第８図、第４図□は本発明の実
施例を表わす側断面図である。
ｌＯはｎ−ＧａＡｓ基板、１１はｐ −Ｇａｌ−ｚ Ａ
ｌｘＡｓ電流阻止層、１２はｎ−Ｇａ１−ＸＡＩＸＡ８
閉込め層、１３はｎ又はｐ形のＧａＡｓ活性層、１４は
ｐ −Ｇａ １−ｘＡ１ｘＡｓ閉込め層、１５はｐ−Ｇ
ａＡ’ｓオーミックコンタクト層、１６．１７はｐ側及
びｎ側電極、１８は階段状段差部、１９ｉ欠損部である
。
１２図
［″
ｉｌｌ：
・ ”′）FIG. 1 is a side sectional view of a conventional striped double heterostructure semiconductor laser, and FIGS. 2, 8, and 4 □ are side sectional views showing embodiments of the present invention. 1O is an n-GaAs substrate, 11 is a p-Gal-z A
lxAs current blocking layer, 12 is n-Ga1-XAIXA8
Confinement layer, 13 is n or p type GaAs active layer, 14 is p-Ga1-xA1xAs confinement layer, 15 is p-G
aA's ohmic contact layer, 16 and 17 are p-side and n-side electrodes, 18 is a stepped portion, and 19i is a defective portion. Figure 12 [''ill: ・ ''')
Claims (1)
第１導電型の半導体基板と、前記凸部を有する面Ｅに形
成され且つ、前記凸部の両側面の端部において層の一部
が欠損している第２導電型の電流、阻止層と、前記電流
阻止層と前記欠損部上に順次積層されに第１導電型の光
及びキャリアの爾込め層と、第１また）よ第２導電型め
活性層と、第２導電型の光及びキャリアの閉込め層とを
具備したことを特徴とする半導体レーザ ′
□(1) A semiconductor substrate of a first conductivity type having a convex portion extending in a stripe shape in one direction, and a semiconductor substrate formed on a surface E having the convex portion, and at the ends of both side surfaces of the convex portion. a current blocking layer of a second conductivity type in which a portion of the layer is defective; a light and carrier concentrating layer of a first conductivity type which is laminated in sequence on the current blocking layer and the defective portion; Furthermore, a semiconductor laser comprising a second conductivity type active layer and a second conductivity type light and carrier confinement layer.
□
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14132881A JPS5843590A (en) | 1981-09-08 | 1981-09-08 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14132881A JPS5843590A (en) | 1981-09-08 | 1981-09-08 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5843590A true JPS5843590A (en) | 1983-03-14 |
Family
ID=15289379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14132881A Pending JPS5843590A (en) | 1981-09-08 | 1981-09-08 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5843590A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6118189A (en) * | 1984-07-05 | 1986-01-27 | Matsushita Electric Ind Co Ltd | Semiconductor laser array device and manufacture thereof |
| JPS6118191A (en) * | 1984-07-05 | 1986-01-27 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and manufacture thereof |
-
1981
- 1981-09-08 JP JP14132881A patent/JPS5843590A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6118189A (en) * | 1984-07-05 | 1986-01-27 | Matsushita Electric Ind Co Ltd | Semiconductor laser array device and manufacture thereof |
| JPS6118191A (en) * | 1984-07-05 | 1986-01-27 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and manufacture thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1152623A (en) | Semiconductor laser device | |
| US4426702A (en) | Semiconductor laser device | |
| JP2716693B2 (en) | Semiconductor laser | |
| JPS5843590A (en) | Semiconductor laser | |
| JPS589592B2 (en) | Method for manufacturing semiconductor light emitting device | |
| JPS60167488A (en) | Semiconductor laser device | |
| JPS641952B2 (en) | ||
| JP2940158B2 (en) | Semiconductor laser device | |
| JP2840833B2 (en) | Semiconductor laser manufacturing method | |
| JPH04150087A (en) | Visible light semiconductor laser device | |
| JPS63302587A (en) | Semiconductor laser | |
| JP2547459B2 (en) | Semiconductor laser device and manufacturing method thereof | |
| JPS6252984A (en) | Self-aligning current constriction type semiconductor light emitting element | |
| JP3005998B2 (en) | Manufacturing method of semiconductor laser | |
| JPS6178191A (en) | Semiconductor light-emitting element | |
| JPS63104494A (en) | Semiconductor laser device | |
| JPS61135181A (en) | Semiconductor light-emitting device | |
| JPS63287079A (en) | Manufacture of semiconductor laser | |
| JPH01136392A (en) | Semiconductor laser device | |
| JPH04120788A (en) | Semiconductor laser | |
| JPH0766492A (en) | Semiconductor laser device and its manufacture | |
| GB2080015A (en) | Semiconductor lasers | |
| JPS6129183A (en) | Semiconductor laser | |
| JPS593873B2 (en) | semiconductor light emitting device | |
| JPS6174383A (en) | Semiconductor laser array device and manufacture thereof |