JPS5842473A - Manufacture of thermal head - Google Patents

Manufacture of thermal head

Info

Publication number
JPS5842473A
JPS5842473A JP56140654A JP14065481A JPS5842473A JP S5842473 A JPS5842473 A JP S5842473A JP 56140654 A JP56140654 A JP 56140654A JP 14065481 A JP14065481 A JP 14065481A JP S5842473 A JPS5842473 A JP S5842473A
Authority
JP
Japan
Prior art keywords
carbon
layer
wear
phase method
heating element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56140654A
Other languages
Japanese (ja)
Other versions
JPS6241476B2 (en
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP56140654A priority Critical patent/JPS5842473A/en
Publication of JPS5842473A publication Critical patent/JPS5842473A/en
Publication of JPS6241476B2 publication Critical patent/JPS6241476B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

PURPOSE:To easily obtain a layer excellent in wear resistance and heat conductivity on the surface of a heating element layer on a base plate by a method in which a reactive gas containing carbon is decomposed by a low-temperature plasma gas phase method to form a carbon-based wear-resistant layer on the heating element layer. CONSTITUTION:On the surface of a heating element layer 3 and an electrode 4 provided on a base plate 1 through a glazed glass layer 2 preferably, a wear- resistant protective layer 5 is formed by low-temperature (100-450 deg.C) plasma gas phase method. In short, a plasma is generated by producing glow or arc discharge by the addition of an electromagnetic energy of DC high-frequency or micro wave under a reduced pressure of 0.01-10 torr to activate and decompose a reactive gas, e.g., such hydrocarbon gases are ethylene, propane, etc., whereby a film made of non-crystalline or semi-noncrystalline insulating carbon or based on a carbon containing 30mol% H and Si is formed.

Description

【発明の詳細な説明】 本発明は感熱記−禄用サーマルヘッドに1如するもので
、特に耐摩耗層を熱伝導率が固体中で厳犬であり最も1
嗣摩耗性を有する炭素または炭素を主成分とする材料に
よ#)設けることを目的としている。
DETAILED DESCRIPTION OF THE INVENTION The present invention is directed to a thermal head for thermal recording.In particular, the wear-resistant layer has a thermal conductivity that is among the highest among solids and is the highest.
It is intended to be made of carbon or carbon-based materials that have wear resistance.

本発明は発熱体層を非晶質(アモルファス以下ASとい
う〕捷たは45〜200Aの大きさの微結晶性を有する
半非晶質(セミアモルファス以下SASという)の如き
プラズマ気相法による100〜450゛C好ましくは2
oO〜35σ017)低温で形成する珪素または炭素を
主成分とする材料により設けることを目的としている。
In the present invention, the heating element layer is made of an amorphous (hereinafter referred to as AS) or a semi-amorphous (hereinafter referred to as SAS) having microcrystallinity with a size of 45 to 200A, which is formed by a plasma vapor phase method. ~450°C preferably 2
oO~35σ017) It is intended to be provided using a material whose main component is silicon or carbon, which is formed at a low temperature.

本発明はかかる耐摩耗j−または発熱、1−がプラズマ
気相法すなわち0.01〜10tOrrの威圧下にて直
流、高周波(500KMZ 〜50MHz)またはマイ
クロ波(例えば2.45GHz)の周波数の電磁エネル
ギを加えてグローまたはアーク放電を発生させてプラズ
マ化し、かかる電磁エネルギにより気化した反応性気体
例えばエチレン、プロパン等の炭化水素ガスを活性化、
分解せしめることによりAsまたはSASの絶縁性の炭
素または炭素中に水素、珪素が30モル多以下に含有し
た炭素を主成分とする被膜を形成せんとするものである
The present invention provides such wear resistance or heat generation, 1- by plasma vapor phase method, that is, by direct current, high frequency (500 KMZ to 50 MHz) or microwave (e.g. 2.45 GHz) frequency electromagnetic applying energy to generate a glow or arc discharge to turn it into plasma, and activating the vaporized reactive gas, such as a hydrocarbon gas such as ethylene or propane, by the electromagnetic energy;
By decomposing it, a film whose main component is insulating carbon of As or SAS or carbon containing 30 moles or less of hydrogen and silicon is formed.

本発明はかかるプラズマ気相法により形成した炭素はそ
のエネルギバンド巾が2.3θ■以上代表的には3θ■
を有する′P、 hi体でありかつその熱伝導率は2.
5.1−t):代表的には5.0(W/Cmdθg〕と
ダイヤモンド の6.60 (W/cm d、eg)に
近いきわめてすぐれた高い値を有する。
In the present invention, carbon formed by such a plasma vapor phase method has an energy band width of 2.3θ■ or more, typically 3θ■
It is a 'P, hi body with a thermal conductivity of 2.
5.1-t): typically has an extremely high value of 5.0 (W/cm d, eg), which is close to 6.60 (W/cm d, eg) of diamond.

さらにンツカース硬度4500Kg/J≦以上代−24
的には6500Kg/nm’というダイヤモンド類似の
硬さを有するきわめてすぐれた特性を見出しかかる特性
をサーマルヘッドK i4用してすぐれた耐摩耗性、感
熱高速応5G性を有せしめたものである。
Furthermore, the hardness of 4500Kg/J≦-24
Specifically, we found an extremely excellent property of 6500 kg/nm' of hardness similar to that of diamond, and applied this property to the thermal head K i4 to provide excellent wear resistance and heat-sensitive high-speed response 5G properties.

さらに本発明はかかるASまたはSASの450°C以
下で作られた炭素中に111価またはV価の不純物であ
るホウ素またはリンを0.1〜3モル条の痕1皮に添加
すると、10”−106気伝導度を有せしめることがで
きる。そのためこの場合は発熱累子として用い、さらに
その仮械的!I!f質より「し1摩耗層を必ずしも形成
させる必要がないなどの特性を有せしめることができる
という他の特徴を有する。
Further, the present invention provides that when boron or phosphorus, which is a 111-valent or V-valent impurity, is added to the carbon of such AS or SAS made at 450°C or less per 0.1 to 3 mol strip per skin, 10" -106 air conductivity.Therefore, in this case, it is used as a heat generating element, and furthermore, due to its pseudomechanical!I!f properties, it has characteristics such as "1) It is not necessarily necessary to form a wear layer." Another feature is that it can be

本発明はさらに耐摩耗層を減圧状LIqのプラズマ気相
法に用いるため、発熱層の側部に対しても上面と同順の
厚さで保蚊することができる。
Further, in the present invention, since the wear-resistant layer is used in the plasma vapor phase method of reduced pressure LIq, the side portions of the heat generating layer can be kept in the same thickness as the top surface.

そのためとれまでスパッタ法、常圧気相法等で作られた
場合、この側面をおおうためK 結果として耐摩耗層を
上面の厚さ2μ以上(11i11面の厚さ0.2μ以上
)を必要とした。しかじ本発明においては上面も側面も
0.1〜0.3μわれは十分であシ、結果として厚さが
約1/10になったため、さらに感熱の応答速度を向上
させることができるようになった。
Therefore, when the crack is made by sputtering, normal pressure vapor phase, etc., the wear-resistant layer needs to have a thickness of 2μ or more on the top surface (thickness of 0.2μ or more on the 11i11 surface) to cover this side surface. . However, in the present invention, the thickness of 0.1 to 0.3μ is sufficient for the top and side surfaces, and as a result, the thickness is reduced to about 1/10, so that the thermal response speed can be further improved. became.

本発明において反応性気体は炭化水素例えばエチレン(
0,H,)メタン系炭化水素(0,H2,、l)等の気
体または鮭累を一部に含んだ場合はテトラメチルシラン
((c、Q s i) 、テトラエチルシラン((a、
Q、 S 1) ′S=を用いてもよい。前者にあって
は炭素に水素が30モル襲以下特に5A61とすると0
.01〜51〜5モル条存在しつつも炭素同志の共有結
合が強くダイヤモンドとtJ似の物性を有していた。ま
た後者にあっては水素が0.01〜20モルチを含み、
さらに珪素を炭素の1/3〜↓ 以下に図面に従って芙力也例を示す。
In the present invention, the reactive gas is a hydrocarbon such as ethylene (
0,H,) Methane hydrocarbons (0,H2,,l) or other gases, tetramethylsilane ((c, Qs i), tetraethylsilane ((a,
Q, S 1) 'S= may also be used. In the former case, carbon has less than 30 moles of hydrogen, especially when 5A61 is used, it is 0.
.. Although 01-51-5 moles were present, the covalent bond between carbon atoms was strong and it had physical properties similar to those of diamond. In addition, in the latter case, hydrogen contains 0.01 to 20 mole,
Furthermore, silicon is 1/3 to carbon ↓ An example of Furuya is shown below according to the drawing.

第1図は本発明に用いられたサーマルプリンタのたて断
面図を示す。第1図(B)は第1図(A)のA−A’の
前面を示す。(C)はB −B’の断面を示す。
FIG. 1 shows a vertical sectional view of a thermal printer used in the present invention. FIG. 1(B) shows the front view taken along line AA' in FIG. 1(A). (C) shows a cross section taken along line B-B'.

図面において基板特にセラミック基板上にグレイズドさ
れたガラス層(2)、発熱体層(4)、電極(4)、耐
琴耗層(5)が積1..i して設けられている。また
第1図(0)に示す如<、R&熱紙がこすられる部分1
l−L発熱体層(3)上に接して耐J承耗層(5)が設
けられている。
In the drawing, a glazed glass layer (2), a heating element layer (4), an electrode (4), and an abrasion-resistant layer (5) are laminated on a substrate, particularly a ceramic substrate. .. i is provided. Also, as shown in Figure 1 (0), the area 1 where the R & hot paper is rubbed is
A J wear-resistant layer (5) is provided on and in contact with the L-L heating element layer (3).

本発明はこの耐摩耗層(5)を炭素または炭素を主成分
とした材料とし、この材料をプラズマ気相法によシ形成
するため、第1図(B)、(C)に示す如く、発熱体層
の側部の厚さが発熱体層上面の厚さを概略一致させるこ
とができるという特徴を有する。
In the present invention, this wear-resistant layer (5) is made of carbon or a material containing carbon as a main component, and is formed by a plasma vapor phase method, so that as shown in FIGS. 1(B) and (C), A feature is that the thickness of the side portions of the heat generating layer can be made approximately equal to the thickness of the top surface of the heat generating layer.

これは減圧下(0,01〜10torr)であり、反応
性気体の平均自由行程が長くなシ気相法を行うに際して
も側辺への捷わりこみが大きいためである。加えてプラ
ズマ化し ・−′ か番台4、反応性気体同志に大きな運動エネルギを与え
て互いに衝突させ、四方人吉への飛しようを促している
ことにある。
This is because even when performing the gas phase method under reduced pressure (0.01 to 10 torr) and the mean free path of the reactive gas being long, the bending to the sides is large. In addition, it turns into plasma and imparts a large amount of kinetic energy to the reactive gases, causing them to collide with each other, encouraging them to fly towards Yomo Hitoyoshi.

耐摩耗層に12.I してば、以下の如くにして作製し
た。すなわち被形成面を有する基板を反応容器内に封入
し、この反応容g3を10tOrrまで真空引きをする
とともに、この基板を加熱炉によリ100〜450″C
If寸しくは200〜350’O例えば300°Cに加
熱した。とのIAこの為?囲気中に水素を加えた。例え
ば13.56MH2,50〜500 Wとし、その実j
Rr的な電極間1本は15〜150cmと長くした。そ
れはプラズマ化した時の反応性気体である炭素はきわめ
て安定な材料であるため各原索丑たは炭素が會合した会
合分子に対し高いエネルギを与え、炭末同志互いにJ(
有結合をさせるためである。形成された被膜に関して出
力が50〜150WKテはAsが250〜50owでは
SAS八その中間ではそれらが混合した:[4造が′電
子線回折では11況察された。
12. In the wear-resistant layer. I was then produced as follows. That is, a substrate having a surface to be formed is sealed in a reaction vessel, the reaction volume g3 is evacuated to 10 tOrr, and the substrate is heated at 100 to 450''C in a heating furnace.
If the temperature is 200-350'O, for example, 300°C. IA with this for this reason? Hydrogen was added to the atmosphere. For example, 13.56MH2, 50 to 500 W, and the actual
The distance between the Rr-like electrodes was set to be 15 to 150 cm. Carbon, which is a reactive gas when turned into plasma, is an extremely stable material, so it imparts high energy to each primitive rope or associated molecule of carbon, and the carbon particles mutually interact with each other.
This is to create a bond. Regarding the formed film, when the output was 50 to 150 WK, the As was 250 to 50 OW, SAS was mixed, and in the middle, they were mixed: 11 cases were observed by electron beam diffraction.

さらにこのプラズマ化した雰囲気に対し、灰化物気体例
えばメチレンまたはプロパンを2.1h人した。すると
この反応性気体が脱水素化し、炭素の結合が互いに共有
結合し合って、被形成面に炭素破膜を形成させることが
できた。
Furthermore, ash gas such as methylene or propane was added to this plasma atmosphere for 2.1 h. Then, this reactive gas was dehydrogenated, the carbon bonds were covalently bonded to each other, and a broken carbon film was formed on the surface to be formed.

基板の温度が100〜200°Cにては、硬度か弱干低
く、また基板への)−17ご性が必ずしも好ましいもの
ではなかったが、200°C以上+fに250〜350
°Cにおいては、きわめて安定な強い被形成面への密肩
19ミを有していた。
When the temperature of the substrate is 100 to 200°C, the hardness is slightly low, and the -17 resistance to the substrate is not necessarily desirable, but at +f of 200°C or higher, the hardness is slightly low.
At 19°C, it had an extremely stable and strong tight shoulder to the formed surface of 19mm.

加熱温度は450’O以上にすると、基板との熱膨張係
数の差によりストレスが内在してし甘い問題があり、2
50−450’Oで形成された被膜が理η 30Y子係含まれる主成分が炭素の被j模であった。こ
れでも炭素のみと同4)Rの硬度があった。
If the heating temperature is set to 450'O or more, there is a problem that stress will be generated due to the difference in thermal expansion coefficient with the substrate.
The coating formed of 50-450'O was a coating whose main component was carbon. Even with this, the hardness was 4) R, which is the same as that of carbon alone.

熱伝博度は炭素のみが5W/cm degであったが2
〜3W/am degと少なかった。
The heat transfer degree was 5W/cm deg only for carbon, but 2
It was as low as ~3 W/am deg.

以上の如くにして形成された炭系被膜は0.05〜0.
2μの厚さすなわち従来の115〜1/10の薄さであ
っても101時間以上の使用に「i[える11it /
、・y粍件を有していた。
The carbon-based coating formed as described above has a carbonaceous coating of 0.05 to 0.0.
Even with a thickness of 2μ, which is 115 to 1/10 of the conventional thickness, it can be used for more than 101 hours.
, had some problems.

実すへ四2 この実%i flJは実、I#例1と同様の硬度のサー
マルプリンタを実施例1と同体のプラズマ気相法を用い
て発熱体層を形成させた場合である。
Actually, this actual % i flJ is the case where the heat generating layer was formed using a thermal printer with the same hardness as in Example 1 using the same plasma vapor phase method as in Example 1.

その小“!造は実施例1と同様の条件のプラズマ気相法
とした。しかし形成される被膜が導電性(抵抗・!f:
) tた(d坐導体性であることを心安とするため、形
成された被膜は市価またはV価の不純物例えばホウ素、
またはリンを添加しないを形成せしめた。
The small "! structure was made using the plasma vapor phase method under the same conditions as in Example 1. However, the formed film was conductive (resistance, !f:
) (d) To ensure that the film is conductive, the formed film is free of commercially available or V-valent impurities such as boron,
Or, it was formed without adding phosphorus.

すなわちfl香の」圭素被)換に1叫しては、出発物質
をシラン(SinHl、、 n’?1) 、四フッ化珪
素を用い、1司様の100〜450001列えば200
〜350”Cにて形成させた。高量1皮エネルギは13
.56MHzヲ10〜50WとしてAs、’または50
〜200Wとして(9) SASを形成させた。■画の不縄物は例えばホウ素ヲB
LHI、ヲ用イテ、マタv11Iliノ不、1IIIl
吻tま例えばリンをPH,を用いて前記した比の如く微
少なドープ丑たはノンドープをして用いた。形成された
披j1〆中に水素が20モル多以下に含不したが発熱さ
せることによシそれらは外部に放出されてしまった。
In other words, in place of the ``fluorophore'', silane (SinHl, n'?1) was used as the starting material, silicon tetrafluoride was used, and 200
Formed at ~350"C. High volume 1 skin energy is 13
.. 56MHz 10~50W As,' or 50
(9) SAS was formed at ~200 W. ■For example, boron is a material that cannot be used in painting.
LHI, wo use ite, mata v11Ili no fu, 1IIIl
For example, phosphorus was used after being slightly doped or non-doped using PH as described above. Although the formed gas contained less than 20 moles of hydrogen, it was released to the outside by generating heat.

また炭素においては、実施例1と同様のメチレンを用い
た。ここにB、V′O,H,=O,tl 〜3%、PH
y’0、HL、0.01〜3%として形成させた。その
結果電気伝導度は10〜10(−ncm)かflられた
0以上の説明よシ明らかな如く、本発明はその基責名奴
としてプラズマ気相法を用いるため、基板温度が100
〜450’O代衣的には250〜400’0特K 30
0°Cという従来のm JILil形成方法で考えるな
らば低い温度で可j化である。特に500’O以下であ
ることは基板材料としてガラスを用いるIllその熱膨
張の歪に対しきわめてこnを少くし、従来の高扁処理に
よる幕板のそり等の大きな欠(10) ンタの発熱部が1mmあたシロ本しか作れなかったが、
これを24本に1で漏めることかできるようになった。
Furthermore, for carbon, methylene as in Example 1 was used. Here B, V'O, H, = O, tl ~3%, PH
y'0, HL, 0.01-3%. As a result, the electrical conductivity is 10 to 10 (-ncm) or more than 0.
~450'O clothing-wise 250~400'0 special K 30
Considering the conventional method of forming mJILil at 0°C, it is possible to form JIL at a low temperature. In particular, the value of 500'O or less is extremely low for the distortion caused by thermal expansion when glass is used as the substrate material, and the heat generation of the screen is greatly reduced due to the warping of the curtain plate due to conventional high-profile processing. I was only able to make a book with a diameter of 1mm, but
I am now able to leak this to 1 out of 24 people.

以上の戚明より明らかな如く、本発明はそのエネルギバ
ンド巾2. OeV以上代表的には2.5〜3eVを有
する絶縁性のみ光性炭素を耐曜耗性材料として用いンt
こと、さらに炭素または炭素を主成分とする抵抗体また
は半Jj体を発熱体層として用いたことを特徴としてい
る。そのために本発明はプラズマ気相法によりその一方
または双方を形成せしめ、従来の気相法で形成された温
度よシも300〜500’Oも低い500’O以下の温
度で作ることができ、基板材料の遠矩に大きな自由度を
イリ、低1+li格化にきわめてすぐれた特徴ケ有して
いた。
As is clear from the above description, the present invention has an energy band width of 2. Insulating photosensitive carbon with a voltage higher than OeV, typically 2.5 to 3eV, is used as a wear-resistant material.
Furthermore, it is characterized in that carbon or a resistor or semi-Jj body containing carbon as a main component is used as the heat generating layer. To this end, the present invention allows one or both of them to be formed by a plasma vapor phase method, and can be formed at a temperature of 500'O or less, which is 300 to 500'O lower than the temperature formed by a conventional vapor phase method. It had a large degree of freedom in terms of the distance and rectangle of the substrate material, and had extremely excellent characteristics in terms of low 1+li rating.

本発明はプラズマ気相法を主として記した。The present invention mainly describes the plasma vapor phase method.

しかしかかる耐)4粍性が得られるIJqシにおいてイ
オンブレーティングその他のプラズマまたはレーザ等の
電磁エネルギ、光エネルギヲ用いてもよい。
However, in an IJQ system that can obtain such resistance to 4-year-old heat, electromagnetic energy such as ion blating or other plasma or laser, or optical energy may be used.

本発明の実施例においての第1図の構造はその一例を示
したもので、発熱体層を単AI+N晶としてトランジス
タ構造であってもよく、ソの他シリコンメサ構造、プレ
ナー栴造等に用いることができる。
The structure shown in FIG. 1 in the embodiment of the present invention shows one example, and the heat generating layer may be made of single AI+N crystal and may have a transistor structure, and may also be used for a silicon mesa structure, a planar structure, etc. Can be done.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明のサーマルプリンタのたて断面図を示す
FIG. 1 shows a vertical sectional view of the thermal printer of the present invention.

Claims (1)

【特許請求の範囲】 1 基板上に選択的に発熱体層が形成された被形成面上
に炭素を含有する反応性気体を100〜450’Cの温
度にてプラズマ気相法によシ分解、反応した炭素または
炭素を主成分とした耐摩耗層を形成することを特徴とし
たサーマルヘッド作製方法。 2、特許請求の範囲第1項において、珪素捷たは炭素を
含有する反応性気体を100−450°Cの温度にてプ
ラズマ気相法によシ分解、反応せしめるとをにより、基
板上に選択的に非晶質′81.たは微結晶性を有する半
非晶質の珪素丑たは炭素を主成分とする発熱体層を形成
することを特徴とするサーマルヘッド作製方法。 \1/
[Claims] 1. A reactive gas containing carbon is decomposed on a surface on which a heat generating layer is selectively formed on a substrate by a plasma vapor phase method at a temperature of 100 to 450'C. , a thermal head manufacturing method characterized by forming a wear-resistant layer mainly composed of reacted carbon or carbon. 2. In claim 1, a reactive gas containing silicon or carbon is decomposed and reacted on a substrate by a plasma vapor phase method at a temperature of 100-450°C. Selectively amorphous '81. 1. A method for manufacturing a thermal head, comprising forming a heating layer mainly composed of semi-amorphous silicon or carbon having microcrystallinity. \1/
JP56140654A 1981-09-07 1981-09-07 Manufacture of thermal head Granted JPS5842473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56140654A JPS5842473A (en) 1981-09-07 1981-09-07 Manufacture of thermal head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56140654A JPS5842473A (en) 1981-09-07 1981-09-07 Manufacture of thermal head

Publications (2)

Publication Number Publication Date
JPS5842473A true JPS5842473A (en) 1983-03-11
JPS6241476B2 JPS6241476B2 (en) 1987-09-03

Family

ID=15273666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56140654A Granted JPS5842473A (en) 1981-09-07 1981-09-07 Manufacture of thermal head

Country Status (1)

Country Link
JP (1) JPS5842473A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5959472A (en) * 1982-09-29 1984-04-05 Pentel Kk Thermal head
DE3525913A1 (en) * 1984-07-20 1986-01-30 Canon K.K., Tokio/Tokyo RECORDING HEAD
JPS61189957A (en) * 1985-02-19 1986-08-23 Matsushita Electric Ind Co Ltd Thermal head
DE3609975A1 (en) * 1985-03-25 1986-10-02 Canon K.K., Tokio/Tokyo THERMAL RECORDING HEAD
DE3609493A1 (en) * 1985-03-23 1986-10-02 Canon K.K., Tokio/Tokyo THERMAL WRITING HEAD
JPS6237902A (en) * 1985-08-13 1987-02-18 松下電器産業株式会社 Thermal head
JPS634068A (en) * 1986-06-23 1988-01-09 Nec Corp Diamondlike carbon film
US4783369A (en) * 1985-03-23 1988-11-08 Canon Kabushiki Kaisha Heat-generating resistor and heat-generating resistance element using same
US4804974A (en) * 1985-03-23 1989-02-14 Canon Kabushiki Kaisha Thermal recording head
US4847639A (en) * 1985-06-10 1989-07-11 Canon Kabushiki Kaisha Liquid jet recording head and recording system incorporating the same
US4870388A (en) * 1985-03-22 1989-09-26 Canon Kabushiki Kaisha Heat-generating resistor and heat-generating resistance element using same
US6046758A (en) * 1998-03-10 2000-04-04 Diamonex, Incorporated Highly wear-resistant thermal print heads with silicon-doped diamond-like carbon protective coatings

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11472906B2 (en) 2018-06-06 2022-10-18 Mitsubishi Gas Chemical Company, Inc. Actinic-ray-curable resin composition, gas-barrier film, and multilayer structure

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0239391B2 (en) * 1982-09-29 1990-09-05 Pentel Kk
JPS5959472A (en) * 1982-09-29 1984-04-05 Pentel Kk Thermal head
DE3525913A1 (en) * 1984-07-20 1986-01-30 Canon K.K., Tokio/Tokyo RECORDING HEAD
JPS61189957A (en) * 1985-02-19 1986-08-23 Matsushita Electric Ind Co Ltd Thermal head
US4870388A (en) * 1985-03-22 1989-09-26 Canon Kabushiki Kaisha Heat-generating resistor and heat-generating resistance element using same
DE3609493A1 (en) * 1985-03-23 1986-10-02 Canon K.K., Tokio/Tokyo THERMAL WRITING HEAD
US4783369A (en) * 1985-03-23 1988-11-08 Canon Kabushiki Kaisha Heat-generating resistor and heat-generating resistance element using same
US4804974A (en) * 1985-03-23 1989-02-14 Canon Kabushiki Kaisha Thermal recording head
US4845513A (en) * 1985-03-23 1989-07-04 Canon Kabushiki Kaisha Thermal recording head
DE3609975A1 (en) * 1985-03-25 1986-10-02 Canon K.K., Tokio/Tokyo THERMAL RECORDING HEAD
US4983993A (en) * 1985-03-25 1991-01-08 Canon Kabushiki Kaisha Thermal recording head
US4847639A (en) * 1985-06-10 1989-07-11 Canon Kabushiki Kaisha Liquid jet recording head and recording system incorporating the same
JPS6237902A (en) * 1985-08-13 1987-02-18 松下電器産業株式会社 Thermal head
JPS634068A (en) * 1986-06-23 1988-01-09 Nec Corp Diamondlike carbon film
JPH0558068B2 (en) * 1986-06-23 1993-08-25 Nippon Electric Co
US6046758A (en) * 1998-03-10 2000-04-04 Diamonex, Incorporated Highly wear-resistant thermal print heads with silicon-doped diamond-like carbon protective coatings

Also Published As

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JPS6241476B2 (en) 1987-09-03

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