JPS5842280A - 光起電力素子の製造方法 - Google Patents

光起電力素子の製造方法

Info

Publication number
JPS5842280A
JPS5842280A JP56141491A JP14149181A JPS5842280A JP S5842280 A JPS5842280 A JP S5842280A JP 56141491 A JP56141491 A JP 56141491A JP 14149181 A JP14149181 A JP 14149181A JP S5842280 A JPS5842280 A JP S5842280A
Authority
JP
Japan
Prior art keywords
transparent conductive
conductive film
oxide
manufacturing
photovoltaic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56141491A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0128512B2 (enrdf_load_stackoverflow
Inventor
Hajime Ichiyanagi
一柳 肇
Tadashi Igarashi
五十嵐 廉
Nobuhiko Fujita
藤田 順彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56141491A priority Critical patent/JPS5842280A/ja
Publication of JPS5842280A publication Critical patent/JPS5842280A/ja
Publication of JPH0128512B2 publication Critical patent/JPH0128512B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers

Landscapes

  • Photovoltaic Devices (AREA)
JP56141491A 1981-09-07 1981-09-07 光起電力素子の製造方法 Granted JPS5842280A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56141491A JPS5842280A (ja) 1981-09-07 1981-09-07 光起電力素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56141491A JPS5842280A (ja) 1981-09-07 1981-09-07 光起電力素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5842280A true JPS5842280A (ja) 1983-03-11
JPH0128512B2 JPH0128512B2 (enrdf_load_stackoverflow) 1989-06-02

Family

ID=15293148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56141491A Granted JPS5842280A (ja) 1981-09-07 1981-09-07 光起電力素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5842280A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226869A (ja) * 1985-07-26 1987-02-04 Kyocera Corp 光起電力装置の製造方法
JPH0272564U (enrdf_load_stackoverflow) * 1988-11-24 1990-06-01

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5626478A (en) * 1979-08-13 1981-03-14 Shunpei Yamazaki Optoelectro conversion device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5626478A (en) * 1979-08-13 1981-03-14 Shunpei Yamazaki Optoelectro conversion device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226869A (ja) * 1985-07-26 1987-02-04 Kyocera Corp 光起電力装置の製造方法
JPH0272564U (enrdf_load_stackoverflow) * 1988-11-24 1990-06-01

Also Published As

Publication number Publication date
JPH0128512B2 (enrdf_load_stackoverflow) 1989-06-02

Similar Documents

Publication Publication Date Title
JP5285651B2 (ja) 太陽電池の製造方法
US20110259395A1 (en) Single Junction CIGS/CIS Solar Module
CN103107228B (zh) 光电转换装置
JPS59205770A (ja) 光起電力装置およびその製造方法
JPS6325515B2 (enrdf_load_stackoverflow)
CN218788382U (zh) 一种高效异质结太阳能电池
JPS58500360A (ja) 非晶質半導体の方法及び装置
US4415760A (en) Amorphous silicon solar cells incorporating an insulating layer in the body of amorphous silicon and a method of suppressing the back diffusion of holes into an N-type region
CN102569481A (zh) 一种具有梯度型带隙特征的纳米硅窗口层及其制备方法
US6458254B2 (en) Plasma & reactive ion etching to prepare ohmic contacts
JPH0494172A (ja) 非晶質光電変換装置およびその製造方法
CN106062973B (zh) 光电转换装置
JPS5842280A (ja) 光起電力素子の製造方法
JP4215697B2 (ja) 光電変換装置およびその製造方法
CN101814557B (zh) 硅基薄膜叠层太阳能电池隧道结的制作方法
JPH10226598A (ja) 透明導電性酸化チタン膜及びその製造方法
TWI481055B (zh) Method for manufacturing photoelectric conversion device
JPS5827377A (ja) 太陽電池素子の製造方法
JPS6332276B2 (enrdf_load_stackoverflow)
JPS6152992B2 (enrdf_load_stackoverflow)
CN118630073B (zh) 一种电池
JP6294694B2 (ja) 太陽電池およびその製造方法、ならびに太陽電池モジュール
JP2757896B2 (ja) 光起電力装置
JP3253449B2 (ja) 光起電力装置の製造方法
JP2958491B2 (ja) 光電変換装置の製造方法