JPS5841663B2 - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5841663B2
JPS5841663B2 JP53078301A JP7830178A JPS5841663B2 JP S5841663 B2 JPS5841663 B2 JP S5841663B2 JP 53078301 A JP53078301 A JP 53078301A JP 7830178 A JP7830178 A JP 7830178A JP S5841663 B2 JPS5841663 B2 JP S5841663B2
Authority
JP
Japan
Prior art keywords
lead
plating
sealing
diode
sealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53078301A
Other languages
Japanese (ja)
Other versions
JPS554979A (en
Inventor
孝夫 三好
美彦 村木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Nippon Electric Co Ltd
Original Assignee
New Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Nippon Electric Co Ltd filed Critical New Nippon Electric Co Ltd
Priority to JP53078301A priority Critical patent/JPS5841663B2/en
Publication of JPS554979A publication Critical patent/JPS554979A/en
Publication of JPS5841663B2 publication Critical patent/JPS5841663B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Description

【発明の詳細な説明】 この発明は例部導出用リード線を有する半導体装置、特
にDHD (Double HeatsinkDiod
e)形ガラス封止ダイオードの製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device having a lead wire for deriving an example part, particularly a DHD (Double Heatsink Diode).
e) A method for manufacturing a glass-sealed diode.

現在市販されているダイオード製品はほとんどがDHD
型ガラス封止ダイオードである。
Most diode products currently on the market are DHD.
It is a type glass sealed diode.

この種ダイオードは、先ず、銅線材料を予め所定長に切
断してガラス封着に適する出口導体(ジュメット材)と
溶接した外部導出リード線が用意され、次いでダイオー
ド素子をマウントしガラス管で封止される。
For this type of diode, first, an external lead wire is prepared by cutting copper wire material to a predetermined length and welding it to an exit conductor (Dumet material) suitable for glass sealing.Then, the diode element is mounted and sealed with a glass tube. be stopped.

熱封着されたダイオードのリード線は、半田メッキされ
る。
The heat-sealed diode lead wires are solder plated.

そして各試験項目の検査と選別の後選別グループ毎に品
種の識別マーキング及び品種毎の迦装がなされて完成品
になる。
After inspecting and sorting each test item, each sorting group is marked with product identification markings and is equipped with the specifications for each product, resulting in a finished product.

しかし、このようなダイオードの製造方法では下記の通
り種々の問題があった。
However, such a diode manufacturing method has various problems as described below.

1 封止工程において、リード線が細長く曲り易いため
封止治具へのリード線の装着が難かしい。
1. In the sealing process, it is difficult to attach the lead wire to the sealing jig because the lead wire is long and thin and bends easily.

2、メッキ作業でリード線が曲るため、リード伸し作業
が必要となる。
2. Lead wires are bent during plating work, so lead stretching work is required.

3、特性選別工程において、リード線が曲ると測定端子
へのリード線の着脱が不完全となり、作業効率が悪ろく
なると共に正確な選別区分が出来なくなる。
3. In the characteristic selection process, if the lead wire is bent, the lead wire cannot be attached to or removed from the measurement terminal incompletely, reducing work efficiency and making it impossible to perform accurate sorting.

これらの欠陥は主にその封止工程に先立ってリード線と
日出導体との溶接に起因し、またメッキ工程を熱処理後
の封止工程以降に行うことによるものであり、各工程毎
の取扱いを煩雑化して全体の自動化ラインの設置に大き
な障害となっていた。
These defects are mainly caused by the welding of the lead wire and the Hiji conductor prior to the sealing process, and also because the plating process is performed after the sealing process after heat treatment. This made the process complicated and became a major obstacle to installing an entire automated line.

従って、本発明の目的は上記欠点に鑑み提案されたもの
であり、省力化面で改良された半導体装置、特にDHD
形封止ダイオードの製造方法を提示するにある。
Therefore, an object of the present invention was proposed in view of the above-mentioned drawbacks, and it is an object of the present invention to provide a semiconductor device, particularly a DHD device, which is improved in terms of labor saving.
A method for manufacturing a shape-sealed diode is presented.

本発明の要旨は、先ず、外部導出用リード線を付けない
目出導体をそのま\で用いて、半導体素子の封止と選別
を行ない、しかる後にメッキ処理済のリード線を日出導
体に溶接することにある。
The gist of the present invention is to first seal and sort semiconductor elements by using the exposed conductor without external lead wires attached, and then to attach the plated lead wire to the exposed conductor. It's about welding.

従って、選別検査工程以前における外部導出リード線に
起因した従来のトラブルは完全に解消される。
Therefore, the conventional troubles caused by external lead wires before the screening and inspection process are completely eliminated.

以下図面に従ってこの発明に係る実施例を従来例と比較
しつ\詳述する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment according to the present invention will be described in detail below in comparison with a conventional example according to the drawings.

第1図は本発明の製造方法に係るDHD形ガラス封止ダ
イオードの部分断面図であり、一方にAgバンプ電極と
他方に基板電極とを有するダイオード素子1が銅被覆さ
れた金属線のジュメット材からなる一対の日出導体2,
3を突き合わせ面で挾着されている。
FIG. 1 is a partial sectional view of a DHD type glass-sealed diode according to the manufacturing method of the present invention, in which a diode element 1 having an Ag bump electrode on one side and a substrate electrode on the other side is made of a Dumet material of a copper-coated metal wire. A pair of sunrise conductors 2 consisting of
3 is clamped on the butt surface.

このダイオード素子1は口出導体2,3の一部分と共に
絶縁性外囲器のガラス管4により封止される。
This diode element 1 and part of the outlet conductors 2 and 3 are sealed by a glass tube 4 of an insulating envelope.

このダイオード素子の封止体列側の各日出導体2,3に
はそれぞれ列部導出用リード線6,7が溶接される。
Lead wires 6 and 7 for leading out the row portion are welded to the sunrise conductors 2 and 3 on the side of the sealed body row of this diode element, respectively.

これらリード線6,7には金属メッキ、例えば半田メッ
キ8゜9が施されており、リード線の耐触性を向上させ
半田付は性をよくしている。
These lead wires 6 and 7 are coated with metal plating, for example, solder plating 8°9 to improve the contact resistance of the lead wires and improve solderability.

また、ガラス管4の外面には、選別特性による品種表示
と共に極性、製造社標等のマーク10が捺印されている
Further, on the outer surface of the glass tube 4, marks 10 such as polarity, manufacturer's company name, etc. are stamped in addition to type indication based on sorting characteristics.

不発明に係るダイオードの製造方法は第2図の工程図に
従って行われる。
The method of manufacturing a diode according to the invention is carried out according to the process diagram shown in FIG.

すなわち、先ず、封+)一工程11において組立部品で
ある。
That is, first, the parts are assembled in step 11 (sealing +).

ダイオード素子1、ガラス管4、及び一対の目出導体2
,3を適当に成型されたカーボン材の封IL治具に所定
配置させる。
Diode element 1, glass tube 4, and a pair of exposed conductors 2
, 3 are placed in a predetermined position in an appropriately molded sealing IL jig made of carbon material.

治具に収めた各部品は電力制御された加熱装置の封止設
備にセットし、ガラス管4の溶融湿度より少し高目に加
熱してガラス管4を口出導体2゜3の側面に融着し、第
3図に示すようなダイオード素子の封止体5を得る。
Each component housed in the jig is set in the sealing equipment of a power-controlled heating device, heated to a temperature slightly higher than the melting humidity of the glass tube 4, and the glass tube 4 is melted to the side of the outlet conductor 2゜3. Then, a sealed diode element 5 as shown in FIG. 3 is obtained.

こXでガラス管4と日出導体2.3の膨張係数ははゾ等
しく選定されており、ガラス対金属の強固な封着が形成
される。
In this case, the expansion coefficients of the glass tube 4 and the solar conductor 2.3 are selected to be equal to each other, so that a strong glass-to-metal seal is formed.

この封止体5は次に選別工程12に移され、所定の検査
項目、例えば、定電圧ダイオードの場合逆漏えい電流I
R1順電圧降下■F、ツェナー電圧■Z、動作抵抗RZ
等の特性検査を行ない、それぞれの基準レベルに従って
区分がなされ品種が決められる。
This sealed body 5 is then transferred to a sorting step 12, and a predetermined inspection item, for example, reverse leakage current I in the case of a constant voltage diode, is carried out.
R1 forward voltage drop ■F, Zener voltage ■Z, operating resistance RZ
The following characteristic tests are carried out, classification is made according to each standard level, and varieties are determined.

この選別工程12は通常のダイオード用自動特性選別装
置が使用されるが1.It、LI一体5は第3図の通り
導出用のリード線を具えていないため特性選別装置はコ
ンパクトで単純化された構造にできる。
In this sorting step 12, an ordinary automatic characteristic sorting device for diodes is used.1. As shown in FIG. 3, the It, LI integrated unit 5 does not have a lead wire for derivation, so that the characteristic selection device can have a compact and simplified structure.

本発明の特徴として外部導出用リード線6,7の口出導
体2,3への溶接は選別工程12以降で行われる。
As a feature of the present invention, welding of the external lead wires 6 and 7 to the outlet conductors 2 and 3 is performed after the sorting step 12.

リード線6,7は予めメッキ工程13により用意される
The lead wires 6 and 7 are prepared in advance by a plating process 13.

このリード線6,7は通常銅被覆された鉄−ニッケル芯
線が用いられ、メッキ材として錫、鉛を主成分とした半
田材料が電気メッキにより数μ〜10数μメッキされる
The lead wires 6 and 7 are usually copper-coated iron-nickel core wires, and are electroplated with a solder material containing tin or lead as a main component.

こSで、リード線材としては上記の地鉄、ニッケル、そ
の他の金属リード材料が、又メッキ材として金、銀その
他のメッキ材料が夫々置換し得る。
In this case, the lead wire material may be replaced with the above-mentioned base iron, nickel, or other metal lead material, and the plating material may be replaced with gold, silver, or other plating material.

また、メッキ方法としてはメッキ材料によって夫々電気
メッキ、化学メッキ、その他ディップ法等が適宜採用さ
れ得る。
Further, as a plating method, electroplating, chemical plating, other dipping methods, etc. may be appropriately adopted depending on the plating material.

リード溶接工程14においては選別工程12で区分され
たダイオードのグループ毎に前記メッキリード線6,7
が封止体5の口出導体2,3に電気溶接される。
In the lead welding process 14, the plated lead wires 6, 7 are separated for each group of diodes divided in the sorting process 12.
are electrically welded to the lead conductors 2 and 3 of the sealing body 5.

こXでメッキリード線6,7は予め所定の寸法に切断さ
れたもの又はスプール状のまXのいずれを用いても良く
、更に溶接工程14での取付は両電極同時に溶接するこ
とも出来る。
The plated lead wires 6 and 7 may be either pre-cut to predetermined dimensions or spool-shaped, and furthermore, both electrodes may be welded simultaneously in the welding step 14.

次に品種別に区分されメッキリード線を溶接したクイオ
ード封止体は、マーキング工程15において夫夫グルー
プ毎にそのガラス管4の外周表面に選別品種に応じた表
示と共に極性社標等のマーク10が捺印され、更に必要
に応じて最終検査され、計数され所定ケースの鈍装が行
われてDHDガラス封止ダイオードが完成される。
Next, in a marking step 15, the quartz sealed bodies are sorted by type and welded with plated lead wires, and marks 10 such as polarity marks are marked on the outer circumferential surface of the glass tube 4 for each group. The DHD glass-sealed diode is completed by stamping, final inspection if necessary, counting, and blunt mounting of a predetermined case.

これらの工程は通常ベルトコンベアにより自動化ライン
で構成される。
These processes are usually constructed on automated lines using belt conveyors.

一方第4図に示す従来例は最初にリード溶接工程16が
あり、リード線と日出導体の溶接がなされ一対のスラグ
リードが用意される。
On the other hand, in the conventional example shown in FIG. 4, there is first a lead welding step 16, in which the lead wire and the sunrise conductor are welded to prepare a pair of slag leads.

通常このスラグリードの製作は自動化されるが、次の封
止工程1Tに備え半田メッキなしで用意される。
Normally, the production of this slug lead is automated, but it is prepared without solder plating in preparation for the next sealing process 1T.

すなわち、ガラス管の封止温度は通常6000〜800
°Cであり、半[(]材の融点以上であるためこのスラ
グリードにはメッキを施すことができない。
That is, the sealing temperature of the glass tube is usually 6000 to 800
°C, which is higher than the melting point of the half-metal material, so plating cannot be applied to this slag lead.

それ故に封止工程17JJ降にリードメッキ工程18が
必要となる。
Therefore, the lead plating process 18 is required after the sealing process 17JJ.

リードメッキ工程18は通常錫及び鉛を主成分とする半
田材が使用されるが、このメッキ方法として(イ)電気
部品等小物で大量のメッキに適すくバレル法、((ロ)
半田デイツプ法等が採用される。
The lead plating process 18 usually uses a solder material mainly consisting of tin and lead, and the plating methods include (a) the barrel method, which is suitable for plating large quantities of small items such as electrical parts, and (b) the barrel method.
Solder dip method etc. are adopted.

しかし前者バレル法においてはリード線が曲がる欠点が
あり、図示していないがリードメッキエ稈18後にリー
ド修正作業が必要である。
However, the former barrel method has the disadvantage that the lead wire is bent, and although not shown, lead correction work is required after the lead plating process 18.

又後者半田デイツプ法においては半田メッキが均一に出
来にくい欠点の他ガラス管及びダイオード素子に熱衝撃
が加わり、ダイオードの特性劣化の原因となる。
In addition, the latter solder dip method has the disadvantage that solder plating is difficult to achieve uniformly, and thermal shock is applied to the glass tube and diode element, causing deterioration of the characteristics of the diode.

更に、これらいづれのメッキ方法においても均一なメッ
キ仕上げを得るためメッキ作業に先立ち酸又はアルカリ
性の薬品によるリード表面の処理が必要であり、この薬
品によりジュメット線の封止部が浸触される欠点がある
Furthermore, in both of these plating methods, it is necessary to treat the lead surface with acid or alkaline chemicals prior to plating in order to obtain a uniform plating finish, and this has the disadvantage that the sealed portion of the Dumet wire is contaminated by this chemical. There is.

このメッキ作業後、選別工程19で特性規格にもとずく
品種区分がなされ、それぞれ品種グループ毎にマーキン
グされ同様にDHDダイオードが完成される。
After this plating work, in a sorting step 19, products are classified based on characteristic standards, and each product group is marked, and DHD diodes are completed in the same way.

こSで本発明の特徴を更に理解し易くするため本発明に
よる実施例と従来例C工程との特質を対比すれば次の通
りである。
In order to make the characteristics of the present invention easier to understand, the characteristics of the embodiment according to the present invention and the conventional process C will be compared as follows.

工程 封止工程0υ 選別工程(12) リードメツ 主工程 α3) リード溶接 工程 04) 特 質 従来はスラグリードを用いるが、 本発明では日出導体のみである ので封正治其の構造が簡単にな り、組立部品の治具への装着等 その取扱処理が著るしく改善さ れ能率向上に役立つ。process Sealing process 0υ Sorting process (12) lead mets Main process α3) lead welding Process 04) Characteristics Traditionally, slag lead is used, but In the present invention, only the Hiji conductor is used. Therefore, the structure of Feng Shoji became simpler. mounting of assembled parts on jigs, etc. The handling process has been significantly improved. This helps improve efficiency.

従来の封止体の舛観はリード 線がついてリード線が曲ると測子 へのリードの着脱が不完全とな りやりにくいが、本発明の封止 体はリード線がついていないた め選別設備がコンパクトに出来、 測子が単純化され作業能力が良 くなる。The conventional sealing body has a lead shape. If the wire is attached and the lead wire is bent, the probe The lead may not be attached or removed completely. Although difficult to perform, the sealing method of the present invention There was no lead wire attached to the body. The sorting equipment can be made compact. The probe is simplified and the work ability is improved. It becomes.

従来は封止後にリードメッキ されるため封止部のガラスの融 蓋部が薬品で浸触されるが、本 発明ではリード線自体のメッキ であり、メッキ作業が容易であ ると共に従来の欠点は全くない。Conventionally, lead plating was performed after sealing. melting of the glass in the sealing part. Although the lid is exposed to chemicals, the main In the invention, the lead wire itself is plated. Therefore, plating work is easy. It has none of the drawbacks of the conventional method.

又従来はメッキ作業後にリード 伸し作業が必要であったが不発 明では全くいらない。In addition, conventionally the lead was removed after plating work. Stretching work was required, but it failed. It's not needed at all in Ming.

従来は日出導体1個ずつの溶 接であるが、本発明では封止体 工 程 特 質 の一対の日出導体に同時に溶接 出来、しかもコンベアの途中で も不工程の設置が可能であるた め一貫した作業が出来省力効果 が太きい。Previously, each Hiji conductor was melted. However, in the present invention, the sealed body Process characteristics simultaneously welded to a pair of sunrise conductors Completed, and in the middle of the conveyor It is also possible to install without any process. This allows for consistent work and labor-saving effects. It's thick.

以上対比した通り本発明に係る製造方法はダイオード素
子を封止した状態でのメッキ作業を必要とせず封止工程
から製品の完戊迄−貫したベルトコンベアラインによる
流れ作業が可能となる。
As compared above, the manufacturing method according to the present invention does not require plating work with the diode element sealed, and enables assembly line work using a belt conveyor line that runs from the sealing process to the completion of the product.

更に選別工程までの封止体に曲り易いリード線を取り付
けていないため各工程設備の簡素化と作業性をいちじる
しく高めることが出来その省力効果が大きい。
Furthermore, since no easily bendable lead wires are attached to the sealed body up to the sorting process, each process equipment can be simplified and workability can be significantly improved, resulting in a large labor-saving effect.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の製造方法に係るDHD形ガラZ封止ダ
イオードの部分断面図、第2図は第1図の主要工程図、
第3図は第2図の封止後の封止体を示す縦断面図、第4
図は従来のDHD形ダイオードの主要工程図である。 1・・・・・・ダイオード素子、2,3・・・・・・口
出導体、4・・・・・・ガラス管(絶縁性外囲器)、5
・・・・・−封止体、6.7・・・・・・外部導出用リ
ード線、8,9・・・メッキ層、11・・・・・・封止
工程、12・・・・・・選別工程、13・・・・・・リ
ードメッキ工程、14・・・・・・リード線線溶接工程
FIG. 1 is a partial sectional view of a DHD type glass Z-sealed diode according to the manufacturing method of the present invention, FIG. 2 is a main process diagram of FIG. 1,
Figure 3 is a vertical sectional view showing the sealed body after sealing in Figure 2;
The figure is a main process diagram of a conventional DHD type diode. 1... Diode element, 2, 3... Exit conductor, 4... Glass tube (insulating envelope), 5
......-Sealing body, 6.7... Lead wire for leading out to the outside, 8, 9... Plating layer, 11... Sealing process, 12... ... Sorting process, 13... Lead plating process, 14... Lead wire welding process.

Claims (1)

【特許請求の範囲】[Claims] 1一対の日出導体で挾着された半導体素子を絶縁性外囲
器の熱融着により封止する工程、封止された半導体素子
を所定の検査項目で検査し基準レベルで区分する選別工
程、導出用リード線をメッキする工程、及びメッキされ
たリード線を前記選別工程で区分されたグループ毎に前
記出口導体に溶接する工程を含む半導体装置の製造方法
A process of sealing the semiconductor element clamped by a pair of Hinode conductors by heat-sealing an insulating envelope, and a sorting process of inspecting the sealed semiconductor element using predetermined inspection items and classifying it according to standard levels. A method for manufacturing a semiconductor device, comprising the steps of plating lead wires for derivation, and welding the plated lead wires to the outlet conductor for each group divided in the sorting step.
JP53078301A 1978-06-27 1978-06-27 Manufacturing method of semiconductor device Expired JPS5841663B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53078301A JPS5841663B2 (en) 1978-06-27 1978-06-27 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53078301A JPS5841663B2 (en) 1978-06-27 1978-06-27 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS554979A JPS554979A (en) 1980-01-14
JPS5841663B2 true JPS5841663B2 (en) 1983-09-13

Family

ID=13658092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53078301A Expired JPS5841663B2 (en) 1978-06-27 1978-06-27 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5841663B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639077U (en) * 1986-07-07 1988-01-21

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766889A (en) * 1980-10-03 1982-04-23 Nissan Motor Method of controlling arm back-up cylinder
JPS6149177A (en) * 1984-08-13 1986-03-11 Fuji Techno Kogyo Kk Plunger returning device in reciprocating pump

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639077U (en) * 1986-07-07 1988-01-21

Also Published As

Publication number Publication date
JPS554979A (en) 1980-01-14

Similar Documents

Publication Publication Date Title
US4542438A (en) Hybrid integrated circuit device
US4709122A (en) Nickel/indium alloy for use in the manufacture of a hermetically sealed container for semiconductor and other electronic devices
JPS632358A (en) Lead frame and plating of the same
JPS5841663B2 (en) Manufacturing method of semiconductor device
US5239745A (en) Method for the manufacture of finished self-stabilizing resistors
JPH06181277A (en) Resin-sealed semiconductor device and manufacture of lead frame with its resistance wire
US3155936A (en) Transistor device with self-jigging construction
KR920005350B1 (en) Semiconductor component with two connections and process and device for manufacturing it
US3982317A (en) Method for continuous assembly and batch molding of transistor packages
KR820000680B1 (en) Fabrication method of semiconductor device
US5007149A (en) Method for manufacturing a solid electrolyte capacitor in a chip structure
US5529682A (en) Method for making semiconductor devices having electroplated leads
US5521124A (en) Method of fabricating plastic transfer molded semiconductor silicone bridge rectifiers with radial terminals
JPS614263A (en) Connecting tape for automatic gang bonding
JPS6225899Y2 (en)
US7547581B2 (en) Manufacturing method of a semiconductor device to suppress generation of whiskers
JPS58121636A (en) Manufacture of semiconductor device
JPH0227522Y2 (en)
JPS5828381Y2 (en) printed wiring board
JPS6031220A (en) Method of producing chip-shaped solid electrolytic condenser
JPH10284305A (en) Glass-sealed thermistor and manufacture thereof
JPS55113356A (en) Manufacture of electronic circuit and multilead frame
JPS647547A (en) Resin-sealed semiconductor device
JPS5852343B2 (en) Handout Taisouchino Seizouhouhou
JPS61287118A (en) Manufacture of electronic component