JPS5839025A - 半導体装置の特性測定方法 - Google Patents

半導体装置の特性測定方法

Info

Publication number
JPS5839025A
JPS5839025A JP13721881A JP13721881A JPS5839025A JP S5839025 A JPS5839025 A JP S5839025A JP 13721881 A JP13721881 A JP 13721881A JP 13721881 A JP13721881 A JP 13721881A JP S5839025 A JPS5839025 A JP S5839025A
Authority
JP
Japan
Prior art keywords
contact
resistance value
measurement
semiconductor wafer
probe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13721881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS612295B2 (enrdf_load_stackoverflow
Inventor
Iwao Matsushima
松島 巌
Hiroyuki Toyoda
裕之 豊田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP13721881A priority Critical patent/JPS5839025A/ja
Publication of JPS5839025A publication Critical patent/JPS5839025A/ja
Publication of JPS612295B2 publication Critical patent/JPS612295B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP13721881A 1981-08-31 1981-08-31 半導体装置の特性測定方法 Granted JPS5839025A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13721881A JPS5839025A (ja) 1981-08-31 1981-08-31 半導体装置の特性測定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13721881A JPS5839025A (ja) 1981-08-31 1981-08-31 半導体装置の特性測定方法

Publications (2)

Publication Number Publication Date
JPS5839025A true JPS5839025A (ja) 1983-03-07
JPS612295B2 JPS612295B2 (enrdf_load_stackoverflow) 1986-01-23

Family

ID=15193539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13721881A Granted JPS5839025A (ja) 1981-08-31 1981-08-31 半導体装置の特性測定方法

Country Status (1)

Country Link
JP (1) JPS5839025A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6239022A (ja) * 1985-08-14 1987-02-20 Toshiba Corp プロ−ブテスト方法
JP2013238488A (ja) * 2012-05-15 2013-11-28 Mitsubishi Electric Corp 太陽電池セル特性評価装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6239022A (ja) * 1985-08-14 1987-02-20 Toshiba Corp プロ−ブテスト方法
JP2013238488A (ja) * 2012-05-15 2013-11-28 Mitsubishi Electric Corp 太陽電池セル特性評価装置

Also Published As

Publication number Publication date
JPS612295B2 (enrdf_load_stackoverflow) 1986-01-23

Similar Documents

Publication Publication Date Title
US4386459A (en) Electrical measurement of level-to-level misalignment in integrated circuits
US4918374A (en) Method and apparatus for inspecting integrated circuit probe cards
JPS6362245A (ja) ウエハプロ−バ
US6362638B1 (en) Stacked via Kelvin resistance test structure for measuring contact anomalies in multi-level metal integrated circuit technologies
US6221681B1 (en) On-chip misalignment indication
CN110907799B (zh) 探针卡及晶圆测试装置和晶圆测试方法
US4914601A (en) Method for profiling wafers and for locating dies thereon
JPS5839025A (ja) 半導体装置の特性測定方法
US6762434B2 (en) Electrical print resolution test die
US5060371A (en) Method of making probe cards
JP2007035856A (ja) 集積回路の製造方法、集積回路の測定装置及びウェハ
JP2595962B2 (ja) 半導体装置
JPH0245339B2 (ja) Handotaishusekikairosochi
US20190061100A1 (en) Substrate, edge polishing detection method and device and positioning method and device for the same, exposure apparatus and evaporation device
JPS6313340A (ja) 半導体素子の特性測定方法
JP2559512B2 (ja) 金属膜の膜厚測定方法
JPH0729946A (ja) ウェハープローバー
US20060148113A1 (en) Chain resistance pattern and method of forming the same
JPH07244117A (ja) 半導体素子の検査装置
JPH09207366A (ja) サーマルヘッドおよびその製造方法
JPS64270Y2 (enrdf_load_stackoverflow)
JPS6130219Y2 (enrdf_load_stackoverflow)
JPS63220537A (ja) 半導体基板
JPH06120313A (ja) Tab式半導体装置及びその検査方法
JPH0783041B2 (ja) 半導体装置の検査装置及びその検査方法