JPS5834824A - Epoxy resin composition and its production - Google Patents

Epoxy resin composition and its production

Info

Publication number
JPS5834824A
JPS5834824A JP13270481A JP13270481A JPS5834824A JP S5834824 A JPS5834824 A JP S5834824A JP 13270481 A JP13270481 A JP 13270481A JP 13270481 A JP13270481 A JP 13270481A JP S5834824 A JPS5834824 A JP S5834824A
Authority
JP
Japan
Prior art keywords
epoxy resin
agent
silane coupling
coupling agent
resin composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13270481A
Other languages
Japanese (ja)
Other versions
JPH0138131B2 (en
Inventor
Mitsuo Kakehi
筧 允男
Yukihisa Ikeda
恭久 池田
Shigeru Koshibe
茂 越部
Giyouji Hirata
仰二 平田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP13270481A priority Critical patent/JPS5834824A/en
Publication of JPS5834824A publication Critical patent/JPS5834824A/en
Publication of JPH0138131B2 publication Critical patent/JPH0138131B2/ja
Granted legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain an epoxy resin composition for semiconductor sealing having excellent moisture resistance and a low a stress, by adding strongly water-repellent flexible silane compound containing a silane coupling agent having a silanol functionality <=2 to a resin material and reacting the mixture under an alkaline condition or in contact with superheated steam. CONSTITUTION:A silane coupling agent, silane functionality <=2, and 0.5-3% silicone oil are premixed with part or the whole of at least one material containing a filler in contact with superheated steam or under an alkaline condition of pH>8. Then the mixture is mixed with the remaining portion of the material. The epoxy resin thus produced is mixed with a curing agent, a cure accelerator, a filler, a mold release, a surface-treating agent, etc., to obtain the title epoxy resin composition. This composition is excellent in moisture resistance, useful as a semiconductor-sealing resin having a low stress and particularly useful in the mass production of parts of electrical devices and instruments.

Description

【発明の詳細な説明】 本発明は、耐湿性に勝れ応力の小さい半導体封止用エポ
キシ樹脂組成物及びその製造方法に関するものであシ、
本発明の特徴線シラノール官能基数2以下のシランカッ
プリング剤を含む搬水性の強い可撓性シラン化−合物を
添加すること及びこれら有効に作用させる為過熱水蒸気
曝気下又dl?H)gなるア〃カリ性下で反応させる旭
にある。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an epoxy resin composition for semiconductor encapsulation that has excellent moisture resistance and low stress, and a method for producing the same.
The characteristic line of the present invention is the addition of a flexible silanized compound with strong water transportability containing a silane coupling agent having a silanol functional group number of 2 or less, and the addition of a flexible silanized compound with strong water carrying properties, and the addition of a silanized compound under superheated steam aeration or dl? H)g〃The reaction is carried out under alkaline conditions.

近都、電子機器業界は急速な発展をとげ、半導体の特性
保持の為に数々の技術改良がtk−aれて龜ている。
The electronic equipment industry in Tokyo is rapidly developing, and numerous technological improvements are being made to maintain the characteristics of semiconductors.

これに伴表い半導体封止用エポキシ樹脂成形賃料にも、
半導体の特性保持に必畏愈妓留的歇良が畳京されて自て
いる。これら要求の中で41に重g!壜ことは、エポ中
シ封止法の応力伝下と耐温性に関$4やであるる即ち半
導体組立て時に受けゐ熱変化中樹脂の硬化に9IP1に
って発生する歪等の応力が小1〈且つ水の浸入にようて
発生するペレッ)0腐蝕等の少愈いエポキシ樹脂成形材
料の開発要求が年々強く1にうて龜ている。一般的に、
半導体のq#性破壊O主***因は、半導体組立て工程
で受ける熱応力中封止樹脂の碩化収纏時に生じる応力に
よるものでありたシ、水の浸入による腐蝕を伴なった絶
縁破壊子回路短絡であうた。これら半導体の41iF性
破壊を減少させる為には、半導体封止樹脂の応力を小書
くし且つ耐湿性を高めることが必要である。
Along with this, the rent for epoxy resin molding for semiconductor encapsulation has also increased.
In order to maintain the characteristics of semiconductors, the utmost care has been taken to maintain the properties of semiconductors. Among these requests, 41 is heavy! In other words, the stress transmission and temperature resistance of the epoxy sealing method are $4 or higher.In other words, stress such as strain generated during the hardening of the resin during the heat change during semiconductor assembly. The demand for the development of epoxy resin molding materials that are less susceptible to corrosion, such as small particles (and pellets generated due to water penetration), is increasing year by year. Typically,
The main cause of q# failure of semiconductors was the stress generated during thermal stress during the semiconductor assembly process when the sealing resin sludges, and the insulation with corrosion due to water intrusion. It was damaged by a short circuit in the destroyer circuit. In order to reduce the 41iF breakdown of these semiconductors, it is necessary to reduce the stress of the semiconductor sealing resin and to increase its moisture resistance.

本発明者ら社樹脂組成物0dPKIi水性の強い可II
i性シツン化合物を加えることによりこれら技術的問題
が解決で暑ることを見い出したものである。即ち可撓性
シッフ化金物が水の浸水を防止すると共に応力緩衝層と
なることを見い出したものである。
Resin composition of the present inventors 0dPKIi Aqueous strong PKI II
It has been found that these technical problems can be solved by adding an ionic compound. That is, it has been discovered that the flexible Schiff-formed metal material prevents water from entering and serves as a stress buffer layer.

本発明は、シラノール官能基数2以下のシランカップリ
ング剤及びシリコーンオイル又はシリコーンゴムを0.
6〜396含むことを%黴とするエポキシ樹脂、硬化剤
、硬化促進剤、充填剤、離型剤、表面処理剤等よp威る
エポキシ樹脂組成物並びにシラノール官能基数2以下の
シランカップリング剤及びシリコーンオイル又はシリコ
ーンゴム0.5〜3%を、充填剤を含む原材料〇一種又
は二種以上の一部又は全部と過熱水蒸気曝気1叉aP!
り80条件で予備混合し、更に残シの原材料と混合混練
することを%l[とするエポキシ樹脂、硬化剤、硬化促
進剤、充填剤、離蓋剤、表面処理剤等よシ威るエポキシ
樹脂組成物の製造方法を提供するものである。
The present invention uses a silane coupling agent having a silanol functional group number of 2 or less and a silicone oil or a silicone rubber at 0.0%.
Epoxy resin compositions containing 6 to 396% mold, curing agents, curing accelerators, fillers, mold release agents, surface treatment agents, etc., and silane coupling agents with a silanol functional group number of 2 or less and 0.5 to 3% of silicone oil or silicone rubber, part or all of one or more raw materials containing fillers, and superheated steam aeration once aP!
Pre-mix under 80% condition, and then mix and knead with the remaining raw materials. A method for producing a resin composition is provided.

耐amと低応力を両立させる為には、シラノール基が1
乃至2のシランカップリング剤シリコーンオイル又はシ
リコーンゴムを一部せて用いることが必要である。
In order to achieve both am resistance and low stress, the silanol group must be
It is necessary to use a part of the silane coupling agent silicone oil or silicone rubber.

シラノール基が3以上だと架橋密度が高くな〉可撓性が
失われる為シランカップリング剤Oシツノール基は2以
下が必要である。更に、シランカップリング剤丈では応
力低下が不十分であること及びシリー−ンオイル又はシ
リコーンゴム丈で社シリカ粉末等の充填剤を疎水化でき
ない即ち耐湿性が劣ることよシランカップリング剤とシ
リコーンゴムを併せて用いことが必要である。特に、使
用するシランカップリング剤シリコーンオイル、シリコ
ーンゴムとしてはエポキシ樹脂中硬化剤と反応する官能
基(例えばアイノ基、アル−一ル基エポキシ基、カルボ
キシル基静)を有していることが望ましい。また、量的
には0.5〜396使用することが必要である。これ杜
OJ−未満だと応力低下の効果が少ないこと及び3暢を
超えると製品のガラス転移点が低下したシ捺印性が悪く
なる等の害が生じる為である0 更に、これらシランカップリング剤及びシリコーンオイ
ル又はシリコーンゴムを有効に働かせる為には、充填剤
を含む原材料の一種又は二種以上の一部又は全部と、過
熱水蒸気曝気下又はpm>6の条件で予備混合し、′!
IIK残〉の原材料と混合混練することが必要である。
If the number of silanol groups is 3 or more, the crosslinking density will not be high and the flexibility will be lost, so the number of silanol groups in the silane coupling agent must be 2 or less. Furthermore, the stress reduction is insufficient with the length of the silane coupling agent, and the length of the silicone oil or silicone rubber cannot make fillers such as silica powder hydrophobic, that is, the moisture resistance is poor. It is necessary to use them together. In particular, it is desirable that the silane coupling agent silicone oil or silicone rubber used has a functional group (for example, an aino group, an alkyl group, an epoxy group, or a carboxyl group) that reacts with the epoxy resin medium curing agent. . Moreover, it is necessary to use 0.5 to 396 in quantity. This is because if it is less than OJ-, the effect of reducing stress will be small, and if it is more than 300, there will be harms such as a decrease in the glass transition point of the product and poor stamping properties.In addition, these silane coupling agents In order for silicone oil or silicone rubber to work effectively, it must be premixed with part or all of one or more raw materials containing fillers under superheated steam aeration or under conditions of pm>6.
It is necessary to mix and knead with the raw materials of IIK Residue.

耐湿性及び可撓性2を充分且つ均一に引き出す為に紘充
填剤とよく混合し且つこの混合物を他の原材料中に均質
分散させることが重要である。また、シランカップリン
グ剤による充填剤の疎水化反応を完全に行う為には、過
熱水蒸気曝気下又社PH)5%の条件で充填剤とシラン
カップリング剤を処理することが必要である0しれ以外
の方法だと疎水化反応が不充分となシ耐温性O低下を招
く。また、PH)gにする為の塩基性物質としては、水
酸化ナトリウムの様な無機イオン性物嶺ではなく有機物
(例えば、2.L  4−  L  7−8*  9*
  10−Ootakydro −pyramido 
 (1,2−IL)&Je)in@勢)の方が望ましい
In order to fully and uniformly bring out the moisture resistance and flexibility properties 2, it is important to mix well with the filler and to homogeneously disperse this mixture in the other raw materials. In addition, in order to completely carry out the hydrophobization reaction of the filler with the silane coupling agent, it is necessary to treat the filler and the silane coupling agent under superheated steam aeration and at a pH of 5%. Any other method will result in insufficient hydrophobization reaction and a decrease in temperature resistance. In addition, as a basic substance for adjusting pH)g, organic substances (for example, 2.L 4- L 7-8* 9*
10-Ootakydro-pyramido
(1,2-IL)&Je)in@group) is more desirable.

事始−は、耐湿+&に#れ応力の小さい半導体封止用の
エポキシ樹脂組成物及びその製造方法を提供するもので
電子−器部品の大容量化等を可能にし産業上極めて有用
である。以下、実施例及び比敏例について記述する。
The present invention provides an epoxy resin composition for encapsulating semiconductors that is moisture resistant and has low stress due to humidity and a method for manufacturing the same, which is extremely useful industrially as it enables the large capacity of electronic components. Examples and comparative examples will be described below.

実施例−1 シリカ粉末67郁に、過電使用されているシラノール基
が3つのシランカップリング剤0.4部とシラノール基
が2つのシランカップリング剤8−ダリシドキシメチル
ジメトキシシラシ1部及びアミノ変性シリコーンオイル
0.5部そして1.5−ジ!ザービシタ胃(4う3t 
 O)/*y−5111水$1液(PIE>8)0.1
1S&噴霧しながらヘンシェル(キサ−で混合した。さ
らに、エポキシ樹脂20部硬化剤10部離蓋剤O3S部
硬化促進剤0.5部を加え混合した@ W ニーグーで
滉鈍しエポキシ樹脂組成物食得た。この組成物を利用し
た半導体製品Oピエゾ抵aKよる応力(以下応力と称す
る)は−700kF/−曲げ弾性車紘10001gF/
−謂!プレッシャー!による信頼性テスト(以下PC?
と称する)は1400 hrであったこれは従来Oレベ
ルよ)応力は約半分信頼性は約3倍であうた。ス、この
組成物で封止した、半導体部品o−voo℃から240
′c塘でO温度ナイクルテスト(以下テC!と称す)結
果は不良率が従来の約V6であった。
Example-1 Silica powder 67, 0.4 parts of a silane coupling agent with three silanol groups, 1 part of silane coupling agent 8-dalisidoxymethyldimethoxysilane with two silanol groups, and 0.5 parts of amino-modified silicone oil and 1.5-di! Zabishita stomach (4 u3t
O)/*y-5111 water $1 liquid (PIE>8) 0.1
1S & Mixed with Henschel (Kisa-) while spraying.Furthermore, 20 parts of epoxy resin, 10 parts of curing agent, 0.5 parts of curing accelerator, and 0.5 parts of lid release agent O3S were added and mixed. The stress (hereinafter referred to as stress) due to the semiconductor product O piezoresistor aK using this composition was -700 kF/-bending elasticity of the car horn 10,001 gF/
- So-called! pressure! Reliability test (PC?
) was 1400 hr (this is the conventional O level) stress was about half, and reliability was about 3 times higher. Semiconductor parts sealed with this composition from o-voo°C to 240°C
The results of the O temperature Nykle test (hereinafter referred to as TeC!) showed that the defective rate was about V6 compared to the conventional test.

実施例−2 シリカ粉末67部に通常のシラノール基が3つの脂環式
エボキシシ2ンカップリング剤0.5部とシラノール基
数が2のC−ア電ノグロビルメチルジエトキシ271部
及びシリ;−ンゴム2部を散布しさらに7時−の蒸気を
30秒毎に5秒間の割合いで6回噴き込んでニーグー内
で混合した。さらにエポキシ樹脂208i!化剤1・部
一層剤O,SSa化促進剤OJ部を加え混合後100C
O熱四−ルで混練しエポキシ樹脂組成物を得た〇この組
成物で製造した半導体製品の応力は一6001q/−―
け弾性率900kt/ajPcT1300hrであ−)
た。
Example-2 67 parts of silica powder, 0.5 parts of a conventional alicyclic epoxysilane coupling agent having 3 silanol groups, 271 parts of C-adenoglobil methyldiethoxy having 2 silanol groups, and silica; 2 parts of rubber was sprinkled on the mixture, and 7 o'clock steam was further injected six times at a rate of 5 seconds every 30 seconds to mix the mixture in a Ni-Goo. Furthermore, epoxy resin 208i! 1 part layering agent O, part OJ part SSa conversion agent added and mixed at 100C.
An epoxy resin composition was obtained by kneading it in an O-heated quart. The stress of a semiconductor product manufactured using this composition was 16001q/--
The elastic modulus is 900kt/ajPcT1300hr)
Ta.

比較例−1 (−ダシシトキシ、メテルジメト命ジシラン及びアンノ
変性シリコーンオイルそして、1.5シアザービシタv
s (4s  3t  O) 、/$ボン−51t水溶
at−tt ナイこと以外状実施例−1と同様に製造し
九通常のエポキシ樹脂鳳威物で封止した半導体製品の応
力は一1700kf/csi−げ弾性率は1600kf
/7pcTは600 hrであり九。
Comparative Example-1 (-dashicytoxy, metherdimethodisilane, anno-modified silicone oil, and 1.5 cyanazyl
s (4s 3t O) , /$Bon-51t water-soluble at-tt The stress of the semiconductor product manufactured in the same manner as in Example-1 and sealed with a normal epoxy resin was 1,700 kf/csi. - The elastic modulus is 1600kf
/7pcT is 600 hr and 9.

比較例−8 シリカ粉末66部にシラノール基が3つのシランカップ
リング剤0.5sとシラノール基が2つのカップリング
剤(−メルカプドブ■ビル、メチルジメトキシシ2ン2
部及びエポキシ変性シリコーンオイル1.5部(合計3
.5部)そして2−8# 416e  7*  L  
9e  10−オクタハイドロ−ピッミド−(1,2−
& ”)アゼピン1−水溶液(pm)8)0.1部を添
加混合しさらにエポキシ樹脂20部硬化剤10部離蓋剤
O1S部硬化促進剤0.5を加え=ニーダーで混練しエ
ポキシ樹脂組成物を得た。この組成物を使用し九半導体
製品の応力及び” CT41性は実施例岡等、であう九
が、ガラス転移点が132℃と低(TCTが悪かつ丸。
Comparative Example-8 66 parts of silica powder, 0.5s of a silane coupling agent with three silanol groups, and a coupling agent with two silanol groups (-Mercapdobuvir, Methyldimethoxysilane 2)
1 part and 1.5 parts of epoxy-modified silicone oil (total 3 parts)
.. 5 parts) and 2-8# 416e 7*L
9e 10-octahydro-pimid-(1,2-
& ”) Add and mix 0.1 part of azepine 1-aqueous solution (pm) 8), then add 20 parts of epoxy resin, 10 parts of curing agent, 0.5 parts of lid release agent, O1S part, and curing accelerator = Knead with a kneader to obtain epoxy resin composition Using this composition, the stress and CT41 properties of nine semiconductor products were determined by Example Oka et al., and the glass transition point was as low as 132°C (TCT was poor and round).

上記の結果をIIKすると次011になる本発明による
臣ポキシ樹脂組成物を使用すると半導体製品の応力が小
さく且つ耐湿性が向上することが分る即ち、事始別状今
後の電子機器部品に要求される特性を備えてお〉産業上
極めて有用なことが分る。
The above results are summarized as follows: 011 It can be seen that when the poxy resin composition according to the present invention is used, the stress of semiconductor products is reduced and the moisture resistance is improved. It has been found that it has the following characteristics and is extremely useful industrially.

Claims (1)

【特許請求の範囲】[Claims] (1)シラノール官能基数2以下のシランカップリング
剤及ヒシリコーンオイル又はシリコーンゴムを、0゜8
−〜3−含むことを特徴とするエポキシ樹脂、硬化剤、
硬化促進剤、充填剤、離型剤、表面処理剤等よシ威るエ
ポキシ樹脂組成物。 (匂 シラノール官能基数2以下のシランカップリング
剤及ヒシリ;−ンオイル又はシリコーンゴム0.S〜3
−を、充填剤を含む原材料〇一種又は二種以上の一部又
は全部と過熱水蒸気曝気下又はPH)@の条件で予備混
合し、更に残」O原材料と混食混錬するヒとを畳黴とす
るエポキシ樹脂、硬化剤、硬化促進剤、充填剤、離型剤
、表面処理剤等よ〉成るエポキシ樹脂組成物の製造方法
(1) A silane coupling agent having a silanol functional group number of 2 or less and silicone oil or silicone rubber at 0°8
-~3- An epoxy resin characterized by containing a curing agent,
Epoxy resin compositions that are effective as curing accelerators, fillers, mold release agents, surface treatment agents, etc. (Odor: Silane coupling agent with silanol functional groups of 2 or less;
- is premixed with part or all of one or more raw materials containing fillers under superheated steam aeration or under conditions of PH), and then mixed with the remaining raw materials and a human being mixed with A method for producing an epoxy resin composition comprising an epoxy resin as tatami mold, a curing agent, a curing accelerator, a filler, a mold release agent, a surface treatment agent, etc.
JP13270481A 1981-08-26 1981-08-26 Epoxy resin composition and its production Granted JPS5834824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13270481A JPS5834824A (en) 1981-08-26 1981-08-26 Epoxy resin composition and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13270481A JPS5834824A (en) 1981-08-26 1981-08-26 Epoxy resin composition and its production

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP20525387A Division JPS6399221A (en) 1987-08-20 1987-08-20 Production of epoxy resin composition for sealing semiconductor

Publications (2)

Publication Number Publication Date
JPS5834824A true JPS5834824A (en) 1983-03-01
JPH0138131B2 JPH0138131B2 (en) 1989-08-11

Family

ID=15087602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13270481A Granted JPS5834824A (en) 1981-08-26 1981-08-26 Epoxy resin composition and its production

Country Status (1)

Country Link
JP (1) JPS5834824A (en)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6063951A (en) * 1983-09-16 1985-04-12 Hitachi Ltd Semiconductor device and manufacture thereof
JPS6112051A (en) * 1984-06-27 1986-01-20 Toshiba Corp Epoxy resin forming material for sealing semiconductor
JPS61127723A (en) * 1984-11-27 1986-06-16 Sumitomo Bakelite Co Ltd Molded article of luminescent or receiving element
JPS61183314A (en) * 1985-02-12 1986-08-16 Sumitomo Bakelite Co Ltd Epoxy resin composition
JPS61190550A (en) * 1985-02-19 1986-08-25 Sumitomo Bakelite Co Ltd Epoxy resin molding compound for semiconductor sealing
JPS61268720A (en) * 1984-12-26 1986-11-28 Kanegafuchi Chem Ind Co Ltd Curable resin composition
JPS6356518A (en) * 1986-08-27 1988-03-11 Rishiyou Kogyo Kk Epoxy resin composition
JPS63241061A (en) * 1986-11-13 1988-10-06 Sunstar Giken Kk Epoxy resin composition
JPS6490253A (en) * 1987-09-30 1989-04-06 Matsushita Electric Ind Co Ltd Epoxy resin composition and its production
JPH01185316A (en) * 1988-01-18 1989-07-24 Matsushita Electric Works Ltd Epoxy resin molding material
JPH02173155A (en) * 1988-12-27 1990-07-04 Toray Ind Inc Epoxy-containing composition
JPH02189357A (en) * 1989-01-19 1990-07-25 Matsushita Electric Works Ltd Epoxy resin molding material for semiconductor sealing
JPH0341146A (en) * 1989-12-15 1991-02-21 Hitachi Ltd Resin composition
US5043211A (en) * 1987-03-31 1991-08-27 Kabushiki Kaisha Toshiba Epoxy resin composition and a resin-sealed semiconductor device
JPH03245558A (en) * 1990-09-17 1991-11-01 Hitachi Ltd Semiconductor device
US5068267A (en) * 1988-09-13 1991-11-26 Kabushiki Kaisha Toshiba Semiconductor device encapsulant consisting of epoxy resin composition
US5258426A (en) * 1989-02-23 1993-11-02 Kabushiki Kaisha Toshiba Semiconductor device encapsulant
JPH09167815A (en) * 1996-11-18 1997-06-24 Hitachi Ltd Semiconductor device
JP2010211968A (en) * 2009-03-06 2010-09-24 Somar Corp Insulation paint for electronic component and electronic component using this
JP2017179346A (en) * 2016-03-28 2017-10-05 味の素株式会社 Resin composition

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5431500A (en) * 1977-08-13 1979-03-08 Allied Chem Packing composition based on anhydride curable epoxy resin
JPS5454168A (en) * 1977-10-07 1979-04-28 Hitachi Ltd Epoxy resin composition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5431500A (en) * 1977-08-13 1979-03-08 Allied Chem Packing composition based on anhydride curable epoxy resin
JPS5454168A (en) * 1977-10-07 1979-04-28 Hitachi Ltd Epoxy resin composition

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6063951A (en) * 1983-09-16 1985-04-12 Hitachi Ltd Semiconductor device and manufacture thereof
JPS6364055B2 (en) * 1983-09-16 1988-12-09
JPS6112051A (en) * 1984-06-27 1986-01-20 Toshiba Corp Epoxy resin forming material for sealing semiconductor
JPH0550542B2 (en) * 1984-06-27 1993-07-29 Tokyo Shibaura Electric Co
JPS61127723A (en) * 1984-11-27 1986-06-16 Sumitomo Bakelite Co Ltd Molded article of luminescent or receiving element
JPH0331726B2 (en) * 1984-12-26 1991-05-08 Kanegafuchi Chemical Ind
JPS61268720A (en) * 1984-12-26 1986-11-28 Kanegafuchi Chem Ind Co Ltd Curable resin composition
JPS61183314A (en) * 1985-02-12 1986-08-16 Sumitomo Bakelite Co Ltd Epoxy resin composition
JPS61190550A (en) * 1985-02-19 1986-08-25 Sumitomo Bakelite Co Ltd Epoxy resin molding compound for semiconductor sealing
JPS6356518A (en) * 1986-08-27 1988-03-11 Rishiyou Kogyo Kk Epoxy resin composition
JPS63241061A (en) * 1986-11-13 1988-10-06 Sunstar Giken Kk Epoxy resin composition
US5043211A (en) * 1987-03-31 1991-08-27 Kabushiki Kaisha Toshiba Epoxy resin composition and a resin-sealed semiconductor device
JPS6490253A (en) * 1987-09-30 1989-04-06 Matsushita Electric Ind Co Ltd Epoxy resin composition and its production
JPH01185316A (en) * 1988-01-18 1989-07-24 Matsushita Electric Works Ltd Epoxy resin molding material
US5068267A (en) * 1988-09-13 1991-11-26 Kabushiki Kaisha Toshiba Semiconductor device encapsulant consisting of epoxy resin composition
JPH02173155A (en) * 1988-12-27 1990-07-04 Toray Ind Inc Epoxy-containing composition
JPH02189357A (en) * 1989-01-19 1990-07-25 Matsushita Electric Works Ltd Epoxy resin molding material for semiconductor sealing
US5258426A (en) * 1989-02-23 1993-11-02 Kabushiki Kaisha Toshiba Semiconductor device encapsulant
JPH0341146A (en) * 1989-12-15 1991-02-21 Hitachi Ltd Resin composition
JPH03245558A (en) * 1990-09-17 1991-11-01 Hitachi Ltd Semiconductor device
JPH0566024B2 (en) * 1990-09-17 1993-09-20 Hitachi Ltd
JPH09167815A (en) * 1996-11-18 1997-06-24 Hitachi Ltd Semiconductor device
JP2010211968A (en) * 2009-03-06 2010-09-24 Somar Corp Insulation paint for electronic component and electronic component using this
JP2017179346A (en) * 2016-03-28 2017-10-05 味の素株式会社 Resin composition

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