JPS5834607A - 半導体の洩れ電流を補償する回路及び方法 - Google Patents
半導体の洩れ電流を補償する回路及び方法Info
- Publication number
- JPS5834607A JPS5834607A JP57111419A JP11141982A JPS5834607A JP S5834607 A JPS5834607 A JP S5834607A JP 57111419 A JP57111419 A JP 57111419A JP 11141982 A JP11141982 A JP 11141982A JP S5834607 A JPS5834607 A JP S5834607A
- Authority
- JP
- Japan
- Prior art keywords
- leakage current
- temperature
- current
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000000034 method Methods 0.000 title claims description 17
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000009966 trimming Methods 0.000 description 8
- 230000005669 field effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 208000032750 Device leakage Diseases 0.000 description 1
- 101100233339 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) irs-4 gene Proteins 0.000 description 1
- 230000001447 compensatory effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000576 food coloring agent Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45376—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using junction FET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29484481A | 1981-08-21 | 1981-08-21 | |
| US294844 | 1981-08-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5834607A true JPS5834607A (ja) | 1983-03-01 |
Family
ID=23135190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57111419A Pending JPS5834607A (ja) | 1981-08-21 | 1982-06-28 | 半導体の洩れ電流を補償する回路及び方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5834607A (enrdf_load_stackoverflow) |
| DE (1) | DE3220736A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2511809B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2104331B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3811950A1 (de) * | 1988-04-11 | 1989-10-19 | Telefunken Electronic Gmbh | Schaltungsanordnung zur arbeitspunkteinstellung eines transistors |
| DE10212863B4 (de) | 2002-03-22 | 2006-06-08 | Siemens Ag | Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB769584A (en) * | 1954-09-20 | 1957-03-13 | Mullard Radio Valve Co Ltd | Improvements in or relating to means for compensating transistor circuit arrangements in relation to external conditions |
| US3622902A (en) * | 1969-11-26 | 1971-11-23 | Bendix Corp | Fet differential amplifier |
| DE2147179C3 (de) * | 1971-09-22 | 1984-11-08 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierte Stromquelle |
| US3921013A (en) * | 1973-05-30 | 1975-11-18 | Rca Corp | Biasing current attenuator |
| US3863169A (en) * | 1974-01-18 | 1975-01-28 | Rca Corp | Composite transistor circuit |
| US4068254A (en) * | 1976-12-13 | 1978-01-10 | Precision Monolithics, Inc. | Integrated FET circuit with input current cancellation |
| US4284872A (en) * | 1978-01-13 | 1981-08-18 | Burr-Brown Research Corporation | Method for thermal testing and compensation of integrated circuits |
-
1982
- 1982-06-02 DE DE19823220736 patent/DE3220736A1/de active Granted
- 1982-06-16 FR FR8210490A patent/FR2511809B1/fr not_active Expired
- 1982-06-28 JP JP57111419A patent/JPS5834607A/ja active Pending
- 1982-07-19 GB GB08220863A patent/GB2104331B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3220736A1 (de) | 1983-04-28 |
| FR2511809B1 (fr) | 1987-01-09 |
| FR2511809A1 (fr) | 1983-02-25 |
| GB2104331B (en) | 1985-10-09 |
| DE3220736C2 (enrdf_load_stackoverflow) | 1993-03-25 |
| GB2104331A (en) | 1983-03-02 |
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