JPS5829191A - Driving method for replicate gate - Google Patents

Abstract

PURPOSE:To obtain a high density bubble device with a short access time, through the combination of a bubble stretching pulse and a bubble disconnecting pulse. CONSTITUTION:A pulse 11 to bridge a bubble between a minor loop and a major line while stretching to a stripe shape magnetic domain, and a pulse 12 of opposite polarity for bubble disconnection are combined with each other. The pulse 12 can be located between the pulses 12 to stretch the bubbles. The operating characteristics in using this pulse as a replicate gate is as shown in Figure. That is, a broad operating characteristic and stable operation can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention utilizes ion implantation or Y! This invention relates to a method for driving a reglicade gate of a magnetic bubble memory device having a bubble driving layer formed by GK.

Storage of information, utilizing magnetic bubble memory elements.

Devices using magnetic bubbles that perform logical operations, etc. are non-volatile,
It has numerous features such as high memory density and low power consumption, and is also extremely reliable because it is a solid-state device that does not contain any mechanical elements.

Such magnetic bubble memory devices are also required to have an increased storage density due to the recent increase in the amount of information and the need for more compact devices. However, in the elements used in conventional magnetic puzzle memories, the puzzle transfer/puzzle turns are deposited on a magnetic thin film and formed by etching the nine-malloy four times, so its dimensional accuracy is limited to visible light. It is becoming difficult to reduce the /4 turn and increase the storage density due to limitations on exposure accuracy. For this reason, recently, a method of forming a transfer pattern using an ion implantation method or a YXG (yttrium iron garnet) thin film has been developed. As a representative example of a device using the ion implantation method, as shown in the plan view of FIG. 1 and the cross-sectional view of FIG. A thin film 2 of magnetic garnet is formed by liquid phase epitaxial growth, and ions such as hydrogen, neon, helium, etc. are implanted into a portion 4 of the magnetic thin JglI[2 other than the pattern 3 to form a datan 3. In the element in which the pattern 3 is formed in this way, the magnetization different axis direction of the ion-implanted portion 4 coincides with the in-plane direction as shown by the arrow a, and the easy magnetization axis direction of the pattern portion 3 is the same as the original direction as shown by the arrow a. It is perpendicular to the same in-plane direction. Therefore, the bubble 5 is transferred along the periphery of the pattern 30 as shown by the arrow 1 by the rotating magnetic field. This pattern 3 has a shape of connected rectangles in the b shape, and does not require a gear lug like the conventional Perloy Δ turn, so the dimensional precision IE can be loose, so the pattern can be made smaller and higher density can be achieved. be done. In the case of a major/minor configuration of such a magnetic bubble memory element, a structure as shown in FIG. 3 has been proposed for the regricade gate. To explain this with a diagram, 6 is a major line, 7 is a minor roof, 8 is a hairpin-shaped conductor pattern with a major line and minor roof, and 9 is a chevron-shaped bubble without ion implantation. This is a pattern for cutting.Then, with the tip part of the minor loop 7 and the major line 60 kasug'B facing each other, the conductor pattern 8 is placed along the line Ka2 connecting these two points, and the conductor pattern 8 is placed between the major line 6 and the minor loop 60. A pattern 9 is formed near the middle of the pattern 9.As shown in FIG. When applied as follows, ・Rin 1
If a charged wall that attracts bubbles is generated above zero, a charged wall that repulses and cuts the bubbles is generated below. Therefore, when the bubble is stretched by the hairpin-shaped conductor turn 8 in FIG. 3 and the phase of the rotating magnetic field is such that parts A and B are attracted, repulsive charged wool is generated in parts E and D of the pattern 9. It plays the role of cutting the bubble. Although it is possible to simply use a rectangular pulse current to drive such a resolute (f-), there is a need to develop an even faster and more stable driving method. The present invention was devised based on the requirements of the following.

For this reason, in the present invention, a bubble driving layer by ion implantation or a bubble driving layer having in-plane anisotropy such as YIG is formed on a crystal substrate for magnetic bubbles, and The driving method is characterized in that a 9Δ Lus current is passed through the Reglicade's inductor pattern by combining a pulsed current for expanding the bubble, followed by a pulsed current of opposite polarity for cutting the bubble. be.

1.Details K for the embodiments of the invention based on the attached drawings
l! I will clarify.

The 5th WJ shows a waveform diagram of the /ll soot flow used in the method of the present invention. A ninth 0/# Lux 11 placed in front of the 0/# Lux 11 is combined with a Δ Lux 12 of opposite polarity for cutting the bubble that follows. In addition, this bubble cutting OΔ Lus 12
is the pulse 11 that extends the bubble as shown in Figure 5(b).
The intermediate K h −z ”C%jL%fh0 Such a pulse is shown in Fig. 3)
6 to 9 show the operating characteristics when used in the 9th mode. In addition, using the waveform of Figure 5 of Noyarusu Hiroshi (Xu), the width of the pulse is τ @ m4 Ame TH=O, OS ha
Q, 3 μS, driving magnetic field is 500, driving frequency is 10
The frequency was set to 0 kHz. Then, the 6th wave u/4 pulse 110 current value ■1 is constant at 120 aA, and the phase θ of the tip of /f pulse
And the current of d rus 12 for bubble cutting! Figure 7 shows the operating characteristics when changing the Il ml 20mA.
The operating characteristics are as follows: a Il m is constant at 70 mA, and the phase 0 and the bias magnetic field H are varied.

Further, FIG. 8 shows the operating characteristics when θ is constant at 0', I is constant at 120 mA, and the bubble cutting current 2, bias magnetic field H1, etc. are varied. Figure 9 shows the operating margins of H and -H8 in comparison between the method of the present invention and the conventional method.
The method of the present invention is L20"m Il 70-11.■120
In the case of mA, the upper limit is shown by curve M, the lower limit is shown by , and the upper limit when using the conventional square wave is aWii B.
Show it with '. As shown in FIGS. 6 to 9 above, it can be seen that the method of the present invention has wide operating characteristics and stable operation.

As explained above, the driving method of the replica (f-) of the present invention provides wide and stable operating characteristics by combining the bubble stretching pulse and the bubble cutting pulse. There is an effect that a high-density bubble device with a short access time can be achieved, which can realize pro-fragric acid, which has not been done in ion-implanted bubble devices.

[Brief explanation of drawings]

Figure 1 shows a thousand-faced magnetic bubble cage element formed by the ion implantation method, Figure 2 is a sectional view taken along the line - - in Figure 1, and Figure 3 shows the magnetic bubble cage element formed by the ion implantation method. Fig. 4 is a flat diagram of the regricade dart of the magnetic bubble memory element.
FIG. 5 is an explanatory diagram illustrating the operating principle of the bubble cutting pattern, FIG. 5 is an embodiment O waveform diagram of pulses used in the replicate gate driving method according to the present invention K, and FIGS. 6 to 9
The figures are operational characteristic diagrams of an embodiment of the method of the present invention, in which Fig. 6 is 1-■8, Fig. 7 is 1-H, Fig. 8 is I-H, Fig. 9 is H1-H, FIG. 6- Messiah line, 7-! Inner loop, 8-conductor Δ turn, 9-bubble cutting/f-turn, 11-bubble pull! Stretching pulse, 12-bubble cutting pulse. Patent Applicant: Fujitsu Kinsha Patent Application Representative Patent Attorney: Akira Aoki, Patent Attorney: Kazuyuki Itate, Patent Attorney: 1) Yukio, Patent Attorney: Akira Yamaguchi, Page 5, Figure 6, Phase e (degrees)

Claims (1)

[Claims] 1. Puzzle driving layer or YIG (yttricum iron garnet) by ion implantation on the crystal substrate for the 9-air bubble.
In a method for driving a magnetic bubble memory device in which a bubble driving layer having a certain amount of in-plane anisotropy is formed, a replication)? A method for driving Reglicade r-F, characterized in that a pulsed current that is a combination of a pulsed current for expanding a bubble and a subsequent pulsed current of opposite polarity for cutting the bubble is passed through the conductor turn of (-).