JPS5828724B2 - How to adjust the resistance value of thin film resistor elements - Google Patents
How to adjust the resistance value of thin film resistor elementsInfo
- Publication number
- JPS5828724B2 JPS5828724B2 JP54106973A JP10697379A JPS5828724B2 JP S5828724 B2 JPS5828724 B2 JP S5828724B2 JP 54106973 A JP54106973 A JP 54106973A JP 10697379 A JP10697379 A JP 10697379A JP S5828724 B2 JPS5828724 B2 JP S5828724B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance value
- thin film
- resistor
- adjust
- film resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
【発明の詳細な説明】
本発明は、薄膜抵抗素子の抵抗値調整方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for adjusting the resistance value of a thin film resistive element.
第1図及び第2図は従来公知の抵抗値調整方法の説明図
である。FIGS. 1 and 2 are explanatory diagrams of a conventionally known resistance value adjustment method.
第1図に示す手法は、薄膜抵抗体10面積を変えること
によって電極21.22間の抵抗値を調整するものであ
る。The method shown in FIG. 1 adjusts the resistance value between the electrodes 21 and 22 by changing the area of the thin film resistor 10.
例えばレーザトリマー、超音波振動を利用したトリマー
、あるいはサンド・プラストトリマーなどによって抵抗
体1の一部pを削り取り、面積を変えるようにしている
。For example, a portion p of the resistor 1 is removed using a laser trimmer, a trimmer using ultrasonic vibration, a sand-plast trimmer, or the like to change the area.
この手法は、削り取る量を制御するのが難しく、また、
削り取られた後の抵抗体表面を安定に維持することが困
難などの欠点がある。This method is difficult to control the amount removed, and
There are drawbacks such as difficulty in stably maintaining the surface of the resistor after it has been scraped off.
第2図に示す手法は、抵抗体Rxとは別に互に直列に接
続される複数個の調整用抵抗体R,、R2゜R3とこれ
らの抵抗体を短絡する短絡部Sl 、S2 +S3とを
あらかじめ設けておき、電極21,22間の抵抗値が所
定の値より低い場合、抵抗体R1゜R2+ R3をRx
゛と直列に加えるべく、短絡部S1゜S2.S3切断す
ることによって調整するものである。The method shown in FIG. 2 uses a plurality of adjusting resistors R, , R2°R3, which are connected in series apart from the resistor Rx, and short-circuit parts Sl, S2 + S3 that short-circuit these resistors. If the resistance value between the electrodes 21 and 22 is lower than a predetermined value, the resistor R1゜R2+R3 is set in advance.
In order to add in series with ゛, short circuit parts S1゜S2 . Adjustment is made by cutting S3.
この手法は、調整量を精密に行なうためには、あらかじ
め数多くの抵抗体R1+R2〜Rnを設ける必要があり
、大きな面積の基板を必要とする欠点がある。This method has the drawback of requiring a large number of resistors R1+R2 to Rn to be provided in advance in order to precisely adjust the amount of adjustment, and requiring a large substrate area.
本発明はこのような従来方法における欠点をなくした新
しい抵抗値調整方法を提供しようとするものである。The present invention aims to provide a new resistance value adjustment method that eliminates the drawbacks of such conventional methods.
第3図〜第5図は本発明に係る抵抗値調整方法の説明図
で、第3図は抵抗値調整前の薄膜抵抗素子の構成平面図
、第4図Aは第3図におけるAA断面図、第4図Bは第
3図におけるB −B断面図、第5図は抵抗値調整後の
薄膜抵抗素子の構成図で、Aは平面図、BはA図におけ
るB−B断面図である。3 to 5 are explanatory diagrams of the resistance value adjustment method according to the present invention, where FIG. 3 is a plan view of the configuration of a thin film resistor element before resistance value adjustment, and FIG. 4A is a cross-sectional view taken along line AA in FIG. 3. , FIG. 4B is a sectional view taken along line B-B in FIG. 3, FIG. 5 is a configuration diagram of the thin film resistive element after resistance value adjustment, A is a plan view, and B is a sectional view taken along line B-B in FIG. .
本発明に係る薄膜抵抗素子は、基板30表面に先ず薄膜
抵抗体1を図示するように複数の折曲部41.42.・
・・・・・・・・4nをもつジグザグ状で形成しである
。The thin film resistor element according to the present invention includes a thin film resistor 1 on the surface of a substrate 30, which has a plurality of bent portions 41, 42, .・
...It is formed in a zigzag shape with 4n.
この抵抗体1の材料としては、例えばNi−Cr等が用
いられる。As the material of this resistor 1, for example, Ni-Cr or the like is used.
次にこの抵抗体1の各折曲部41,42.・・・・・・
・・・4nの抵抗体表面に、良導電性材料(例えばAu
′y)薄膜51,52.・・・・・・・・・5nをつげ
である。Next, each bent portion 41, 42 of this resistor 1.・・・・・・
・・・A good conductive material (e.g. Au
'y) Thin films 51, 52.・・・・・・・・・5n is boxwood.
このように、薄膜抵抗素子は、抵抗体が複数個の折曲部
をもつジグザグ状であって、複数個の折曲部には良導電
性材料を覆った構成となっている。In this manner, the thin film resistance element has a resistor having a zigzag shape with a plurality of bent portions, and the plurality of bent portions are covered with a highly conductive material.
このように構成された薄膜抵抗素子において、この状態
では、電極21゜22間の抵抗値は、各折曲部は、良導
電材料の薄膜51,52.・・・・・・・・・5nによ
ってその下側にある抵抗体は短絡されているので、直線
部の抵抗値と、直線部の本数(ここでは6本)とを乗じ
た値(各直線部の抵抗値が等しい場合)となっている。In the thin film resistive element constructed in this way, in this state, the resistance value between the electrodes 21 and 22 is determined by the resistance value between the electrodes 21 and 22 at each bent portion of the thin film 51, 52, . Since the resistor on the lower side is short-circuited by 5n, the value obtained by multiplying the resistance value of the straight part by the number of straight parts (6 in this case) (each straight line) (if the resistance values of the parts are equal).
いま、電極2L22間の抵抗値が所定の値より小さい場
合、抵抗体1の折曲部4L42.・・・・・・・・・4
nを覆っている良導電材料薄膜、例えば51.53を第
5図に示すように化学エツチングによって溶かす。Now, if the resistance value between the electrodes 2L22 is smaller than a predetermined value, the bent portions 4L42.・・・・・・・・・4
A thin film of conductive material covering n, for example 51.53, is dissolved by chemical etching as shown in FIG.
これによって折曲部41,420抵抗体の良導電薄膜に
よる短絡は除去され、この部分の抵抗値を挿入させるこ
とによって抵抗値を増加させ、抵抗値調整を行なうこと
ができる。As a result, the short circuit caused by the highly conductive thin film of the resistor in the bent portions 41 and 420 is removed, and by inserting the resistance value of this portion, the resistance value can be increased and the resistance value can be adjusted.
なお、化学エツチングによって溶かした折曲部には、安
定剤を塗布するようにしてその後安定化させるようにし
てもよい。Note that a stabilizer may be applied to the bent portion dissolved by chemical etching to stabilize the bent portion thereafter.
ここで、例えばひとつの折曲部を覆っている良導電材料
薄膜を溶かすと全抵抗値が1%増加するように各折曲部
の形状、長さ等を設定しておけば、良導電材料薄膜を溶
かす折曲部の数を変えることによって容易に1%の精度
で抵抗値調整を行なうことができる。Here, for example, if the shape and length of each bent part are set so that the total resistance value increases by 1% when the thin film of good conductive material covering one bent part is melted, the good conductive material By changing the number of bends that melt the thin film, the resistance value can be easily adjusted with an accuracy of 1%.
抵抗体の折曲部の幅や長さを変えれば、更に精度良く抵
抗値調整を行なうことができる。By changing the width and length of the bent portion of the resistor, the resistance value can be adjusted more accurately.
なお、良導電性薄膜の除去は、化学エツチング以外の手
法によって行なってもよい。Note that the highly conductive thin film may be removed by a method other than chemical etching.
また、抵抗体1は基板上に形成する他、例えば基板が金
属のような場合には絶縁膜を介して抵抗体を形成しても
よい。In addition to forming the resistor 1 on the substrate, for example, if the substrate is made of metal, the resistor 1 may be formed with an insulating film interposed therebetween.
以上説明したように、折曲部において抵抗体を覆ってい
る良導電性薄膜の除去によって抵抗値を調整する本発明
の抵抗値調整方法は、抵抗体の折曲部を利用して抵抗調
整するものであるから、基板面積を大きくする必要は全
(なく、また、抵抗体自身を変形させるものではないの
で抵抗値調整後においても抵抗値を安定に維持させるこ
とができる等の特長がある。As explained above, the resistance value adjustment method of the present invention adjusts the resistance value by removing the highly conductive thin film covering the resistor at the bent portion, and the resistance value adjustment method of the present invention adjusts the resistance value by using the bent portion of the resistor. Since it is a type of resistor, there is no need to increase the substrate area, and since it does not deform the resistor itself, it has the advantage that the resistance value can be maintained stably even after the resistance value is adjusted.
第1図及び第2図は従来公知の抵抗値調整方法の説明図
、第3図〜第5図は本発明に係る抵抗値調整方法の説明
図で、第3図は抵抗値調整前の薄膜抵抗素子の構成図、
第4図Aは第3図におけるA−A断面図、第4図Bは第
3図におけるB−B断面図、第5図は抵抗値調整後の薄
膜抵抗素子の構成図で、Aは平面図、BはA図における
13−B断面図である。
1・・・・・・薄膜抵抗体、2L22・・・・・・電極
、3・・・・・・基板、41,42.・・・・・・・・
・4n・・・・・・折曲部、51.52.・・・・・・
・・・5n・・・・・・良導電性材料薄膜。1 and 2 are explanatory diagrams of a conventionally known resistance value adjustment method, FIGS. 3 to 5 are explanatory diagrams of a resistance value adjustment method according to the present invention, and FIG. 3 is a thin film before resistance value adjustment. Configuration diagram of resistance element,
4A is a sectional view taken along line AA in FIG. 3, FIG. 4B is a sectional view taken along line BB in FIG. 3, and FIG. Figures and B are sectional views taken along line 13-B in Figure A. 1... Thin film resistor, 2L22... Electrode, 3... Substrate, 41, 42.・・・・・・・・・
・4n...Bent part, 51.52.・・・・・・
...5n... Thin film of well-conductive material.
Claims (1)
グ状で形成するとともに、前記複数個の折曲部を導電材
料の薄膜で覆い、抵抗値調整時において前記導電性材料
の薄膜を除去することによって抵抗値調整を行なうよう
にした薄膜抵抗素子の抵抗値調整方法。 2 導電性材料薄膜の除去を化学エツチングで行なう特
許請求の範囲第1項記載の薄膜抵抗素子の抵抗値調整方
法。[Scope of Claims] 1. A thin film resistor is formed on a substrate in a zigzag shape having a plurality of bent portions, and the plurality of bent portions are covered with a thin film of a conductive material. A method for adjusting the resistance value of a thin film resistance element, in which the resistance value is adjusted by removing a thin film of conductive material. 2. A method for adjusting the resistance value of a thin film resistance element according to claim 1, wherein the conductive material thin film is removed by chemical etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54106973A JPS5828724B2 (en) | 1979-08-22 | 1979-08-22 | How to adjust the resistance value of thin film resistor elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54106973A JPS5828724B2 (en) | 1979-08-22 | 1979-08-22 | How to adjust the resistance value of thin film resistor elements |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5630705A JPS5630705A (en) | 1981-03-27 |
JPS5828724B2 true JPS5828724B2 (en) | 1983-06-17 |
Family
ID=14447232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54106973A Expired JPS5828724B2 (en) | 1979-08-22 | 1979-08-22 | How to adjust the resistance value of thin film resistor elements |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5828724B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57210611A (en) * | 1981-06-19 | 1982-12-24 | Jidou Keisoku Gijutsu Kenkiyuu | Method of trimming film resistor |
-
1979
- 1979-08-22 JP JP54106973A patent/JPS5828724B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5630705A (en) | 1981-03-27 |
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