JPS5823390A

JPS5823390A - 半導体記憶装置

半導体記憶装置

Info

Publication number: JPS5823390A
Authority: JP; Japan
Prior art keywords: floating; erase; memory cell; layer; insulating film
Prior art date: 1981-07-30
Legal status : Granted

Application number

JP56119782A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0217879B2 (enrdf_load_stackoverflow

Inventor

Fujio Masuoka

富士雄舛岡

Current Assignee

Toshiba Corp

Original Assignee

Toshiba Corp

Tokyo Shibaura Electric Co Ltd

Priority date

1981-07-30

Filing date

1981-07-30

Publication date

1983-02-12

1981-07-30 Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp

1981-07-30 Priority to JP56119782A priority Critical patent/JPS5823390A/ja

1981-11-11 Priority to EP81305349A priority patent/EP0052982B1/en

1981-11-11 Priority to DE8181305349T priority patent/DE3175125D1/de

1981-11-13 Priority to US06/321,322 priority patent/US4803529A/en

1983-02-12 Publication of JPS5823390A publication Critical patent/JPS5823390A/ja

1988-05-12 Priority to US07/193,079 priority patent/US4910565A/en

1990-04-23 Publication of JPH0217879B2 publication Critical patent/JPH0217879B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 42
238000003860 storage Methods 0.000 title description 2
239000000758 substrate Substances 0.000 claims description 30
229910052799 carbon Inorganic materials 0.000 claims description 5
239000004020 conductor Substances 0.000 description 67
229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
229920005591 polysilicon Polymers 0.000 description 16
238000010586 diagram Methods 0.000 description 14
238000000034 method Methods 0.000 description 10
238000004519 manufacturing process Methods 0.000 description 9
238000009413 insulation Methods 0.000 description 7
238000000206 photolithography Methods 0.000 description 6
230000010354 integration Effects 0.000 description 5
230000003647 oxidation Effects 0.000 description 4
238000007254 oxidation reaction Methods 0.000 description 4
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
230000008878 coupling Effects 0.000 description 3
238000010168 coupling process Methods 0.000 description 3
238000005859 coupling reaction Methods 0.000 description 3
230000000694 effects Effects 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
239000010703 silicon Substances 0.000 description 3
238000013500 data storage Methods 0.000 description 2
238000000151 deposition Methods 0.000 description 2
238000009792 diffusion process Methods 0.000 description 2
239000002784 hot electron Substances 0.000 description 2
239000011159 matrix material Substances 0.000 description 2
238000009987 spinning Methods 0.000 description 2
PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
235000014676 Phragmites communis Nutrition 0.000 description 1
241000270708 Testudinidae Species 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
238000012217 deletion Methods 0.000 description 1
230000037430 deletion Effects 0.000 description 1
238000003379 elimination reaction Methods 0.000 description 1
UZCGKGPEKUCDTF-UHFFFAOYSA-N fluazinam Chemical compound [O-][N+](=O)C1=CC(C(F)(F)F)=C(Cl)C([N+]([O-])=O)=C1NC1=NC=C(C(F)(F)F)C=C1Cl UZCGKGPEKUCDTF-UHFFFAOYSA-N 0.000 description 1
239000011521 glass Substances 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
230000014759 maintenance of location Effects 0.000 description 1
239000012528 membrane Substances 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
230000005855 radiation Effects 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1