JPS5823390A - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JPS5823390A JPS5823390A JP56119782A JP11978281A JPS5823390A JP S5823390 A JPS5823390 A JP S5823390A JP 56119782 A JP56119782 A JP 56119782A JP 11978281 A JP11978281 A JP 11978281A JP S5823390 A JPS5823390 A JP S5823390A
- Authority
- JP
- Japan
- Prior art keywords
- floating
- erase
- memory cell
- layer
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56119782A JPS5823390A (ja) | 1981-07-30 | 1981-07-30 | 半導体記憶装置 |
| EP81305349A EP0052982B1 (en) | 1980-11-20 | 1981-11-11 | Semiconductor memory device and method for manufacturing the same |
| DE8181305349T DE3175125D1 (en) | 1980-11-20 | 1981-11-11 | Semiconductor memory device and method for manufacturing the same |
| US06/321,322 US4803529A (en) | 1980-11-20 | 1981-11-13 | Electrically erasable and electrically programmable read only memory |
| US07/193,079 US4910565A (en) | 1980-11-20 | 1988-05-12 | Electrically erasable and electrically programmable read-only memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56119782A JPS5823390A (ja) | 1981-07-30 | 1981-07-30 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5823390A true JPS5823390A (ja) | 1983-02-12 |
| JPH0217879B2 JPH0217879B2 (enrdf_load_stackoverflow) | 1990-04-23 |
Family
ID=14770083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56119782A Granted JPS5823390A (ja) | 1980-11-20 | 1981-07-30 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5823390A (enrdf_load_stackoverflow) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513901A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Fixed memory of semiconductor |
| JPS5593591A (en) * | 1978-12-29 | 1980-07-16 | Fujitsu Ltd | Driving system of semiconductor memory device |
| JPS5633882A (en) * | 1979-08-24 | 1981-04-04 | Centre Electron Horloger | Nonnvolatile memory cell |
| JPS5792489A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Semiconductor storage device |
-
1981
- 1981-07-30 JP JP56119782A patent/JPS5823390A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513901A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Fixed memory of semiconductor |
| JPS5593591A (en) * | 1978-12-29 | 1980-07-16 | Fujitsu Ltd | Driving system of semiconductor memory device |
| JPS5633882A (en) * | 1979-08-24 | 1981-04-04 | Centre Electron Horloger | Nonnvolatile memory cell |
| JPS5792489A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Semiconductor storage device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0217879B2 (enrdf_load_stackoverflow) | 1990-04-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7319614B2 (en) | Non-volatile semiconductor memory device and data programming method | |
| KR100368819B1 (ko) | 판독-전용 메모리 및 판독-전용 메모리 장치 | |
| US5294819A (en) | Single-transistor cell EEPROM array for analog or digital storage | |
| US5034926A (en) | Non-volatile semiconductor memory | |
| US5761119A (en) | Nonvolatile semiconductor memory with a plurality of erase decoders connected to erase gates | |
| US5191551A (en) | Non-volatile semiconductor memory device with transistor paralleling floating gate transistor | |
| US6169690B1 (en) | Non-volatile semiconductor memory device | |
| EP0054355A2 (en) | Semiconductor memory device | |
| EP0055799B1 (en) | Non-volatile dynamic random access memory cell | |
| US3760378A (en) | Semiconductor memory using variable threshold transistors | |
| US4630087A (en) | Nonvolatile semiconductor memory device | |
| JPH0294197A (ja) | 不揮発性半導体メモリ装置およびそのデータ書替え方法 | |
| US5576993A (en) | Flash memory array with self-limiting erase | |
| JPH06291332A (ja) | 半導体記憶装置及びその使用方法 | |
| US6339540B1 (en) | Content-addressable memory for virtual ground flash architectures | |
| CN112349311B (zh) | 存储器与其读写方法 | |
| US3875567A (en) | Memory circuit using variable threshold level field-effect device | |
| JPS5823390A (ja) | 半導体記憶装置 | |
| JPH02223097A (ja) | 不揮発性半導体メモリ装置 | |
| US5835398A (en) | Flat NOR type mask ROM having off-cells disposed at every predetermined number of memory cells | |
| JP3143180B2 (ja) | 半導体不揮発性記憶装置とその書き込み方法 | |
| JPS623994B2 (enrdf_load_stackoverflow) | ||
| JPH05275658A (ja) | 不揮発性半導体記憶装置 | |
| JP7242285B2 (ja) | 半導体装置 | |
| JP2573271B2 (ja) | 不揮発性半導体メモリ装置 |