JPS58225680A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS58225680A JPS58225680A JP10781882A JP10781882A JPS58225680A JP S58225680 A JPS58225680 A JP S58225680A JP 10781882 A JP10781882 A JP 10781882A JP 10781882 A JP10781882 A JP 10781882A JP S58225680 A JPS58225680 A JP S58225680A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- layers
- active semiconductor
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 230000001902 propagating effect Effects 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 239000002648 laminated material Substances 0.000 abstract 5
- 230000000644 propagated effect Effects 0.000 abstract 1
- 239000000969 carrier Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
- H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10781882A JPS58225680A (ja) | 1982-06-23 | 1982-06-23 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10781882A JPS58225680A (ja) | 1982-06-23 | 1982-06-23 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58225680A true JPS58225680A (ja) | 1983-12-27 |
| JPH0377677B2 JPH0377677B2 (enrdf_load_stackoverflow) | 1991-12-11 |
Family
ID=14468808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10781882A Granted JPS58225680A (ja) | 1982-06-23 | 1982-06-23 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58225680A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60235491A (ja) * | 1984-05-08 | 1985-11-22 | Mitsubishi Electric Corp | 半導体レ−ザ |
| US4644553A (en) * | 1983-11-22 | 1987-02-17 | U.S. Philips Corporation | Semiconductor laser with lateral injection |
| US4752934A (en) * | 1985-09-20 | 1988-06-21 | Hitachi, Ltd. | Multi quantum well laser with parallel injection |
| JPH01140781A (ja) * | 1987-11-27 | 1989-06-01 | Hitachi Ltd | 光増幅器 |
| US5075743A (en) * | 1989-06-06 | 1991-12-24 | Cornell Research Foundation, Inc. | Quantum well optical device on silicon |
-
1982
- 1982-06-23 JP JP10781882A patent/JPS58225680A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4644553A (en) * | 1983-11-22 | 1987-02-17 | U.S. Philips Corporation | Semiconductor laser with lateral injection |
| JPS60235491A (ja) * | 1984-05-08 | 1985-11-22 | Mitsubishi Electric Corp | 半導体レ−ザ |
| US4752934A (en) * | 1985-09-20 | 1988-06-21 | Hitachi, Ltd. | Multi quantum well laser with parallel injection |
| JPH01140781A (ja) * | 1987-11-27 | 1989-06-01 | Hitachi Ltd | 光増幅器 |
| US5075743A (en) * | 1989-06-06 | 1991-12-24 | Cornell Research Foundation, Inc. | Quantum well optical device on silicon |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0377677B2 (enrdf_load_stackoverflow) | 1991-12-11 |
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