JPS58218093A - Magnetic bubble element - Google Patents

Abstract

PURPOSE:To obtain a composite magnetic bubble having a connecting section stably operated, by increasing a gap between a magnetic bubble transfer path formed with a soft magnetic substance and a magnetic layer holding a magnetic bubble more than the gap at other parts. CONSTITUTION:The gap L between the soft magnetic substance 1 and a magnetic substance 4 holding the magnetic bubble is increased for a desired part only as shown in Figure. The attracting force, i.e., driving force between the transfer path and the magnetic bubble is weaker as the gap L is increased. Thus, only the driving force of a desired soft magnetic transfer path is weakened by increasing partially the gap L. To change the gap between the soft magnetic substance and the magnetic substance holding the magnetic bubble, the thickness of an insulating layer 3 is changed. As the method changing the thickness of the desired part, the photolithography technology being the known technology is used.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic bubble device, and more particularly to a composite magnetic bubble device having an ion implantation transfer path and a soft magnetic material transfer path.

FIG. 1 shows an example of the connecting portion between the ion implantation type transfer path and the soft magnetic material transfer path in the composite magnetic bubble element.

The magnetic bubble (soft magnetic material) that was attracted to Kutan 1
(not shown) are attracted to the ion implantation pattern 2 at the connection. However, since the soft magnetic material has a strong ability to attract magnetic bubbles, there has been a problem in that it is not easy to stably transfer the magnetic bubbles from the soft magnetic material transfer path to the ion implantation transfer path.

In FIG. 1, numeral 3 represents an insulating layer, numeral 4 represents a magnetic film that holds a magnetic puzzle, and numeral 10 represents a substrate.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems and provide a composite magnetic bubble element having a connection part that operates stably.

The present invention will be explained in detail below.

At the connection portion from the soft magnetic material transfer path to the ion implantation transfer path, it is required that the magnetic bubble driving force of the soft magnetic material transfer path is weak, and the magnetic puzzle driving force of the ion implantation transfer path is strong. However, weakening the driving force of the soft magnetic material transfer path over the entire element is inconvenient in various respects, and it is desirable to weaken only the driving force of the desired soft magnetic material transfer path at the connection portion. One method is to increase the distance between the soft magnetic material 1 and the magnetic material 4 that holds the magnetic bubbles only in a desired portion, as shown in FIG.

The attraction force or driving force between the transfer path and the magnetic bubble is the distance @L
The larger the value, the weaker it becomes. Therefore, by partially increasing the distance, it is possible to weaken only the driving force of the desired soft magnetic material transfer path.

The distance between the soft magnetic material transfer path and the magnetic material holding the magnetic bubbles can be changed by changing the thickness of the insulating layer 3.

As a method of changing the thickness of only a desired portion, a well-known photolithography technique can be used. However, since this method requires an extra manufacturing step compared to the conventional method, a conductive layer may be used to avoid this drawback. In a magnetic bubble element, a conductor/layer is always provided to flow a current to control the movement of the magnetic bubble.

Moreover, that's it.

7. The conductor layer is made of soft magnetic material. :, :It is common to be kicked. Therefore, the body layer can be used as a gap layer under the soft magnetic material transfer path. That is, as shown in FIG. 3, the conductor layer 5 is left not only in the part necessary for the original purpose but also in the part where it is desired to weaken the driving force of the soft magnetic material transfer path. Thereafter, after producing the insulating layer 3, the soft magnetic material transfer path 11 is formed.

In this way, the distance between the soft magnetic material transfer path 1 and the magnetic layer 4 that holds the magnetic bubbles increases in a certain portion of the conductor layer 5, and the driving force of the soft magnetic material transfer path becomes weaker. the result,
Transfer of magnetic bubbles from the soft magnetic material transfer path to the ion implantation transfer path is facilitated.

Example 1 FIG. 4 is a sectional view showing an embodiment of the present invention.

StO, film 3 is placed on the magnetic film 4 that holds the magnetic bubbles.
i 0.5μm deposited. A photoresist plate (not shown) having a desired shape is formed using well-known photolithography techniques. The upper 1dsiO* film 3 is etched through the photoresist hole, and the exposed portion of the show film 3 is etched to reduce the film thickness. In fact, the cross-sectional shape of the 5to2 membrane 3 obtained here is steep! '!
< , it is preferable to make it gentle as shown in FIG. This can be easily achieved by blurring the photomask image during photomask transfer. Using a mask with such a blurred image, ion beams and rings can be set to psi.
By etching O,i by a desired value (0.2 μm in this case), an insulating layer whose thickness gradually changes as shown in FIG. 4 is formed.

The connection portion formed by forming the soft magnetic material transfer path 1 on the insulating films having different thicknesses thus formed exhibited extremely good characteristics. Note that when a resist pattern with a steep cross-sectional shape is used, the characteristics at the upper limit of the bias magnetic field are worse than when a smooth resist pattern is used. This is because if the thickness of the insulating film changes suddenly, a large step will be formed in the soft magnetic material transfer path formed thereon, and the transfer characteristics of that portion will deteriorate.

Example 2 This example is shown in FIG. A 0.1 μm thick 840. A film 3 is formed, and then a conductor layer 5 is formed. In this example, the conductor layer 3 is made of A u/M Ot O, 3 μm thick and 10.02 μm thick. The MO layer is 8i0. It is interposed to improve the adhesion between Au and Au. The pattern of the conductor layer 5 is formed in a portion where a current should flow and a portion where it is preferable to weaken the driving force of the soft magnetic material transfer path 1. Then another insulating layer 3'
form.

The insulating layer 3' may be formed of Sin or the like similarly to the insulating layer 3, but preferably a polymer resin is used.

As a result, the level difference in the conductor layer 50 is reduced as shown in FIG. After doing this, the soft magnetic material transfer path 1 may be formed.

The connection portion formed as described above is connected to the rotating magnetic field 600e.
Very good results were obtained with a bias magnetic field margin of 12%.

As is clear from the above description, according to the present invention, the driving force of the soft magnetic material transfer path can be partially weakened.
It is extremely effective in improving the characteristics of the connection part of a composite magnetic bubble element.

[Brief explanation of the drawing]

FIG. 1 is a diagram for explaining the connection between the ion implantation transfer path and the soft magnetic material transfer path of a composite magnetic bubble element, FIG. 2 is a diagram for explaining the present invention in detail, and FIGS. FIG. 5 is a diagram showing different embodiments of the present invention. DESCRIPTION OF SYMBOLS 1... Soft magnetic material pattern, 2... Ion implantation pattern, 3... Insulating film, 4... Magnetic film, 5... Conductor layer, 10... Substrate. Fig. 1 hfJz Fig. fJ 3 Fig. fJ4- Fig. fJ 5 Fig.

Claims (1)

[Claims] In a magnetic puzzle element having a magnetic bubble transfer path formed by ion implantation and a magnetic pull transfer path formed by a soft magnetic material, A magnetic bubble transfer path and a magnetic pull element (magnetic pull element characterized in that the gap between the magnetic bubble transfer path and the magnetic layer capable of holding a pull is larger than the above-mentioned gap in other parts).