JPS58216433A - Ｆｅｔの電気的チヤネル長の決定方法 - Google Patents

Ｆｅｔの電気的チヤネル長の決定方法

Info

Publication number
JPS58216433A
JPS58216433A JP58087773A JP8777383A JPS58216433A JP S58216433 A JPS58216433 A JP S58216433A JP 58087773 A JP58087773 A JP 58087773A JP 8777383 A JP8777383 A JP 8777383A JP S58216433 A JPS58216433 A JP S58216433A
Authority
JP
Japan
Prior art keywords
source
fet
channel length
junction
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58087773A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6321343B2 (cg-RX-API-DMAC7.html
Inventor
ジエロ−ム・デ−ビツド・シツク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS58216433A publication Critical patent/JPS58216433A/ja
Publication of JPS6321343B2 publication Critical patent/JPS6321343B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2653—Contactless testing using electron beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
JP58087773A 1982-06-09 1983-05-20 Ｆｅｔの電気的チヤネル長の決定方法 Granted JPS58216433A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US386495 1982-06-09
US06/386,495 US4453127A (en) 1982-06-09 1982-06-09 Determination of true electrical channel length of surface FET

Publications (2)

Publication Number Publication Date
JPS58216433A true JPS58216433A (ja) 1983-12-16
JPS6321343B2 JPS6321343B2 (cg-RX-API-DMAC7.html) 1988-05-06

Family

ID=23525826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58087773A Granted JPS58216433A (ja) 1982-06-09 1983-05-20 Ｆｅｔの電気的チヤネル長の決定方法

Country Status (4)

Country Link
US (1) US4453127A (cg-RX-API-DMAC7.html)
EP (1) EP0100396B1 (cg-RX-API-DMAC7.html)
JP (1) JPS58216433A (cg-RX-API-DMAC7.html)
DE (1) DE3362113D1 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2886176B2 (ja) * 1989-03-23 1999-04-26 三菱電機株式会社 埋め込みチャネルの物性特性測定法
ES2036469B1 (es) * 1991-08-27 1995-12-16 Consejo Superior Investigacion Estructura de test para la medida de la difusion lateral en tecnologias con dopado a partir de polisicilio, con correccion del desalineamiento
US6066952A (en) 1997-09-25 2000-05-23 International Business Machnies Corporation Method for polysilicon crystalline line width measurement post etch in undoped-poly process
US5972725A (en) * 1997-12-11 1999-10-26 Advanced Micro Devices, Inc. Device analysis for face down chip
US7895218B2 (en) * 2004-11-09 2011-02-22 Veveo, Inc. Method and system for performing searches for television content using reduced text input

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3531716A (en) * 1967-06-16 1970-09-29 Agency Ind Science Techn Method of testing an electronic device by use of an electron beam
DE2824308A1 (de) * 1978-06-02 1979-12-13 Siemens Ag Verfahren zum einpraegen einer spannung mit einem elektronenstrahl

Also Published As

Publication number Publication date
US4453127A (en) 1984-06-05
DE3362113D1 (en) 1986-03-27
JPS6321343B2 (cg-RX-API-DMAC7.html) 1988-05-06
EP0100396B1 (en) 1986-02-12
EP0100396A1 (en) 1984-02-15

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