JPS58216392A - 薄膜ｅｌ素子 - Google Patents
薄膜ｅｌ素子Info
- Publication number
- JPS58216392A JPS58216392A JP57100173A JP10017382A JPS58216392A JP S58216392 A JPS58216392 A JP S58216392A JP 57100173 A JP57100173 A JP 57100173A JP 10017382 A JP10017382 A JP 10017382A JP S58216392 A JPS58216392 A JP S58216392A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- dielectric layer
- light
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 23
- 239000010408 film Substances 0.000 claims description 26
- 239000010410 layer Substances 0.000 description 32
- 238000010586 diagram Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57100173A JPS58216392A (ja) | 1982-06-10 | 1982-06-10 | 薄膜ｅｌ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57100173A JPS58216392A (ja) | 1982-06-10 | 1982-06-10 | 薄膜ｅｌ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58216392A true JPS58216392A (ja) | 1983-12-16 |
| JPS6143839B2 JPS6143839B2 (enrdf_load_stackoverflow) | 1986-09-30 |
Family
ID=14266925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57100173A Granted JPS58216392A (ja) | 1982-06-10 | 1982-06-10 | 薄膜ｅｌ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58216392A (enrdf_load_stackoverflow) |
-
1982
- 1982-06-10 JP JP57100173A patent/JPS58216392A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6143839B2 (enrdf_load_stackoverflow) | 1986-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS61284092A (ja) | 薄膜ｅｌ表示素子 | |
| JPS5823191A (ja) | 薄膜ｅｌ素子 | |
| JP3247148B2 (ja) | エレクトロルミネッセンス素子 | |
| JPS58216392A (ja) | 薄膜ｅｌ素子 | |
| JPS5827506B2 (ja) | 黒化電極構造 | |
| JPS6016078B2 (ja) | 薄膜発光素子 | |
| JPH0428197A (ja) | 端面発光型電界発光素子およびその駆動方法 | |
| JPH04298989A (ja) | 有機薄膜型電界発光素子 | |
| JPS5835587A (ja) | 薄膜ｅｌ素子 | |
| JPS6323640B2 (enrdf_load_stackoverflow) | ||
| JPH0152878B2 (enrdf_load_stackoverflow) | ||
| JP2000188182A (ja) | 紫外発光エレクトロルミネッセンス素子及び画像表示装置 | |
| JPH0460317B2 (enrdf_load_stackoverflow) | ||
| JPH0123917B2 (enrdf_load_stackoverflow) | ||
| JPS5820468B2 (ja) | 黒化電極構造 | |
| JPS60134278A (ja) | Ｅｌ表示装置 | |
| JPS62202492A (ja) | 薄膜ｅｌ素子 | |
| JPS6315719B2 (enrdf_load_stackoverflow) | ||
| JPS60160594A (ja) | 薄膜ｅｌ素子 | |
| JPS6252888A (ja) | 薄膜ｅｌ素子 | |
| JPS6315718B2 (enrdf_load_stackoverflow) | ||
| JPS5855636B2 (ja) | 薄膜ｅｌ素子 | |
| JPS62200681A (ja) | 薄膜ｅｌ素子 | |
| JPS6095889A (ja) | 薄膜ｅｌ素子 | |
| JPH0460318B2 (enrdf_load_stackoverflow) |