JPS58215021A - 分子線源 - Google Patents

分子線源

Info

Publication number
JPS58215021A
JPS58215021A JP9808482A JP9808482A JPS58215021A JP S58215021 A JPS58215021 A JP S58215021A JP 9808482 A JP9808482 A JP 9808482A JP 9808482 A JP9808482 A JP 9808482A JP S58215021 A JPS58215021 A JP S58215021A
Authority
JP
Japan
Prior art keywords
molecular beam
beam source
buffer chamber
shielding
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9808482A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0572095B2 (enrdf_load_stackoverflow
Inventor
Hisatsune Watanabe
渡辺　久恒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9808482A priority Critical patent/JPS58215021A/ja
Publication of JPS58215021A publication Critical patent/JPS58215021A/ja
Publication of JPH0572095B2 publication Critical patent/JPH0572095B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP9808482A 1982-06-08 1982-06-08 分子線源 Granted JPS58215021A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9808482A JPS58215021A (ja) 1982-06-08 1982-06-08 分子線源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9808482A JPS58215021A (ja) 1982-06-08 1982-06-08 分子線源

Publications (2)

Publication Number Publication Date
JPS58215021A true JPS58215021A (ja) 1983-12-14
JPH0572095B2 JPH0572095B2 (enrdf_load_stackoverflow) 1993-10-08

Family

ID=14210474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9808482A Granted JPS58215021A (ja) 1982-06-08 1982-06-08 分子線源

Country Status (1)

Country Link
JP (1) JPS58215021A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115219A (ja) * 1983-11-26 1985-06-21 Anelva Corp 薄膜形成装置用蒸発源セル
US4699083A (en) * 1984-10-24 1987-10-13 Compagnie Generale D'electricite Molecular beam generator using thermal decomposition for manufacturing semiconductors by epitaxy

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461464A (en) * 1977-10-25 1979-05-17 Fujitsu Ltd Hot wall epitaxial growing unit
JPS5547871U (enrdf_load_stackoverflow) * 1978-09-26 1980-03-28

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461464A (en) * 1977-10-25 1979-05-17 Fujitsu Ltd Hot wall epitaxial growing unit
JPS5547871U (enrdf_load_stackoverflow) * 1978-09-26 1980-03-28

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115219A (ja) * 1983-11-26 1985-06-21 Anelva Corp 薄膜形成装置用蒸発源セル
US4699083A (en) * 1984-10-24 1987-10-13 Compagnie Generale D'electricite Molecular beam generator using thermal decomposition for manufacturing semiconductors by epitaxy

Also Published As

Publication number Publication date
JPH0572095B2 (enrdf_load_stackoverflow) 1993-10-08

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