JPS5821432B2 - Hand tie souchi - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and more particularly to a connection between an electrode of a semiconductor element and an external electrode.

Conventionally, wire bonding methods using Au wires or AA wires have been the mainstream for connecting semiconductor elements and external electrode terminals.

This method is difficult to automate and relies mostly on manual work, which requires a significant amount of man-hours and is one of the main causes of high costs for semiconductor devices such as ICs.

There is a flip-chip method as a method that does not use wire bonding.

This flip-chip method mainly involves forming metal bumps on the semiconductor element side and connecting them to external terminals.

The disadvantage of the conventional flip-chip method is that various metals are vapor-deposited, plated, etched, etc. on the semiconductor device, which requires a large number of steps and is complicated, and often damages the semiconductor device. It was difficult to obtain a large height of metal bumps.

The present invention provides a semiconductor device that allows easy and reliable connection between electrodes on a semiconductor element and conductor wiring on a substrate, and provides semiconductor devices according to embodiments of the present invention. Now, a semiconductor device according to an embodiment of the present invention will be described in detail with reference to the drawings.

In FIG. 1, 1 is a semiconductor integrated circuit element, 2 is an oxide film, and 3 is made of AA, Co, etc., with a height of 10 μm and a diameter of 50 μm.
A metal protrusion of about 150 μm is shown, 4 is a conductor wiring, and 5 is a heat-resistant insulating substrate made of glass, resin film, or the like.

To explain the manufacturing method of the device with this structure, the heat-resistant substrate 5
A protrusion 6 having a height of about 10 to 50 microns and a diameter of about 50 to 150 microns, which is the same as the main body of the insulating substrate 5, is formed on the entire surface of the insulating substrate 5 by chemical etching, plasma etching, or mechanical processing.

Note that as materials for the insulating substrate 5 and the protrusions 6, heat-resistant resin such as alumina and polyimide resin, glass, etc. are used.

Next, AA, Cu, Au, etc. are vapor-deposited on the surface of the substrate 5 having the protrusion 6, and the conductor wiring 4 is deposited so as to include the upper surface of the protrusion 6c.
formation.

Next, only the conductor wiring 4 on the upper surface of the protrusion 6 formed on the main body of the insulating substrate 5 is selectively plated with AA, Cu, etc. to form a protrusion 3 having a height of 10 .mu.m and a diameter of about 50 to 150 .mu.m.

Here, methods for selectively forming plating include a method in which plating is spread over the entire wiring and then selective etching is performed, or a method in which electroless plating is selectively performed only on previously vapor-deposited portions.

Next, the surface of the element 1 having the electrodes is placed facing the conductor wiring 4, and the electrodes of the element 1 and the metal protrusions 3 are electrically connected by ultrasonic waves, thermocompression bonding, or the like.

In this way, the element having the structure shown in FIG. 1 is completed.

Note that the protrusion 3 is not necessarily required depending on the bonding method, and the conductor wiring on the protrusion 6 and the electrode on the element may be directly connected.

According to the above device, since the protrusions 6 and the substrate 5 are integrated compared to the case where metal protrusions are used, the strength is stable and the manufacturing process of the protrusions 6 is relatively simple. No matter how small the distance between the protrusions 6 is, insulation between the protrusions 6 can be maintained, there is no risk of short-circuiting, and the protrusions 3 and 6
The upper conductor wiring can be made extremely small and high-density assembly is possible.
contact can be eliminated.

Next, a semiconductor device according to another embodiment of the present invention will be explained with reference to FIG.

In FIG. 2, parts similar to those in FIG. 1 are given the same numbers.

10 is an insulating coating that covers a part of the protrusion 6 and the conductor wiring 4.
is covered.

This insulating coating 10 is made of fluorine-based resin, polyimide resin, S r o 2 film produced by CVD method, or the like.

The step of forming this film 10 is performed after the conductor wiring 4 is formed, or after the metal protrusion 3 is formed.

The former case is particularly advantageous since the coating 10 acts as a mask during the formation of the electroplated projections 3.

According to the device of this embodiment, the conductor is the wiring 4 and the insulating coating 1.
Since the conductor wirings 4 are coated with zero, short circuits or leakage phenomena between the conductor wirings 4 are less likely to occur.

Furthermore, during handling in the process, mechanical damage to the conductor wiring 4 by tools such as tweezers is significantly reduced.

Furthermore, according to this structure, it is possible to further provide a second conductor wiring on the insulating coating 10 to obtain a multilayer wiring structure.

Furthermore, a semiconductor device according to another embodiment of the present invention will be described with reference to FIG.

In FIG. 3, the same parts as in FIGS. 1 and 2 are given the same numbers.

20 is a heat-resistant insulating substrate 5 made of glass, resin film, etc.
It shows insulating protrusions with a height of 10 to 50 μm and a diameter of 50 to 150 μm, which have different expansion coefficients and chemical and physical etching rates.

To explain the manufacturing method of this device, first, an insulator having a different expansion coefficient and chemical and physical etching rate from the insulating substrate 5 is coated on the whole surface of the heat-resistant insulating substrate 5, and unnecessary parts are removed by chemical etching. Targeted etching or the like is performed to form the protrusion 20 with a height of 10 to 50 .mu.m and a diameter of 50 to 150 .mu.m using this insulating material.

There are three main reasons why insulators having different expansion coefficients and chemical and physical etching rates are coated on the insulating substrate 5.

First, because of the difference in chemical and physical etching rates, the height of the protrusion 20 formed of an insulating material can be made constant.

5 Second, for example, if the insulating substrate 5 is made of glass, the protrusions 20
Soft and flexible materials with an expansion coefficient intermediate between glass and silicone such as polyide resin, Teflon resin,
Alternatively, if silicone resin or the like is used, even if a slight temperature change occurs, the insulating substrate 5 and the protrusions 20 will buffer the glass, preventing cracks and damage to the glass, and increasing reliability.

Thirdly, due to the difference in chemical and physical etching rates, the height of the protrusions 20 formed of an insulating material can be easily determined by the thickness of the first layer of insulating material applied. .

Now, next, AA is applied to the surface of the insulating substrate 5 having the protrusion 20.
, Cu, etc. are deposited to form the conductor wiring 4 including the upper surface of the protrusion 20.

Next, apply wires AA and C only on the conductor wiring 4 on the top surface of the protrusion 20.
Plated with u etc. to a height of 10μ and a diameter of 50 to 150μ.
A metal protrusion 3 of about 100 mL is formed.

This protrusion 3 is not necessarily required depending on the bonding method.

Finally, the surface of the element 1 having the electrodes is placed facing the conductor wiring 4, and the electrodes of the element 1 and the metal protrusions 3 are connected airtightly by ultrasonic waves, thermocompression bonding, or the like.

In the device shown in FIG. 3, the required height is formed by the easily formed insulating projections 20 on the heat-resistant insulating substrate 5, so the height of the metal projections 3 may be small.

Furthermore, since the heat-resistant insulating substrate 5 and the insulating protrusions 20 have different expansion coefficients, chemical and physical etching rates, etc., the height of the insulating protrusions 20 may be different from that of the insulating material to be applied first, as described above. The thickness of the layer can be determined and kept constant, and the buffering effect of the projections 20 can prevent damage due to temperature changes and improve reliability.

The semiconductor device of the present invention as described above enables interconnections between the semiconductor element and the substrate to be easily and reliably formed at high density, and exhibits excellent effects in the semiconductor device assembly process.

[Brief explanation of the drawing]

2 and 3 are structural sectional views of semiconductor devices according to embodiments of the present invention, respectively. DESCRIPTION OF SYMBOLS 1... Semiconductor integrated circuit element, 2... Oxide film, 3... Metal protrusion, 4... Conductor wiring, 5... Heat-resistant insulating substrate, 6...
Projection, 10... Insulating coating, 20... Insulating protrusion.

Claims (1)

[Scope of Claims] 1. A protrusion and a conductor wiring are formed on one main surface of a heat-resistant insulating substrate, and the conductor wiring is further formed by a metal layer placed on the insulating protrusion. and a semiconductor element electrode placed facing the conductor wiring, which are electrically connected to each other. 2. A patented device characterized in that the conductor wiring described above is covered with an insulating film. 3. An insulating protrusion different from the insulating substrate is formed on a heat-resistant insulating substrate, a part of the conductor wiring formed on the insulating substrate is extended to the top of the protrusion, and the insulating 1. A semiconductor device, characterized in that a metal layer formed on a conductor wiring at the top of a sexual protrusion is connected to an electrode on a semiconductor element placed facing the insulating substrate.