GB2074793A - Thin film circuit assembly - Google Patents

Thin film circuit assembly Download PDF

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Publication number
GB2074793A
GB2074793A GB8013164A GB8013164A GB2074793A GB 2074793 A GB2074793 A GB 2074793A GB 8013164 A GB8013164 A GB 8013164A GB 8013164 A GB8013164 A GB 8013164A GB 2074793 A GB2074793 A GB 2074793A
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GB
United Kingdom
Prior art keywords
layer
circuit assembly
aluminium
thin
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB8013164A
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GB2074793B (en
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Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Priority to GB8013164A priority Critical patent/GB2074793B/en
Publication of GB2074793A publication Critical patent/GB2074793A/en
Application granted granted Critical
Publication of GB2074793B publication Critical patent/GB2074793B/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0179—Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0302—Properties and characteristics in general
    • H05K2201/0317—Thin film conductor layer; Thin film passive component

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

Within a thin film circuit assembly a thin conductor pattern of aluminium is supported on a planar substrate of aluminium, with at least a deposited layer of electrical insulating material therebetween, for example, of a silicon oxide.

Description

SPECIFICATION Electrical circuit assemblies This invention relates to electrical circuit assemblies each having a thin highly conductive layer supported .on a major surface of an at least substantially planar substrate. Usually the thin highly conductive layer has a thickness less than 6 micrometres, and a sheet resistivity of less than 0.1 ohm per square.
The electrical circuit assembly may include another constituent layer, or layers intermediate between the substrate and the thin highly conduc tive layer. Such an intermediate layer may be of electrical insulating material; or comprises a thin resistive layer having a thickness less than 0.02 micrometre, having a sheet resistivity greater than 100 ohms per square, and conveniently comprising a nickel-chromium alloy; or comprises another thin highly conductive layer.
An initially continuous thin highly conductive layer may be supported on the substrate, and subsequent- ly the thin continuous highly conductive layer is formed into the desired shape in plan of at least a constituent layer of a required conductor pattern of the electrical circuit assembly, for example, by selectively etching portions of the thin initially continuous conductive layer. Such a layer of the conductor pattern is also considered to be a thin highly conductive layer.Alternatively, the thin highly conductive layer is deposited initially in the shape in plan of the required conductor pattern, upon selected portions of the under-lying surface of the circuit assembly, for example, the other portions of the underlying surface of the circuit assembly being covered by a mask during the deposition process step for the highly conductive layer, and subse quently the mask is removed, leaving the required highly conductive layer on the under-lying surface.
It is required that the highly conductive layer is of a material which is easily deposited.
In addition, it is required that the thin highly conductive layer is of a material which, when deposited, is securely bonded to other, contiguous layers of the circuit assembly. The contiguous layers may be of electrical insulating material, or resistive material, or another highly conductive material.
The conductor pattern provides at least a consti tuent part of terminals of the circuit assembly, which terminals are required to be bonded to one type of electrical interconnection members, for example comprising leads extending from, but not included within, the circuit assembly; or comprising conduc tive mounting bumps, which may, or may not, be included within the circuit assembly. Said one type of electrical interconnection members may be re quired to be bonded to the terminations in any convenient way. It may be required to solder these electrical interconnection members to the terminals employing a tin-based solder.Further, the conductor pattern may provide required electrical interconnec tions between constituent electrical circuit elements of the circuit assembly, and always provides electric- al interconnections between the circuit elements and the terminals. Pads may be provided by the electrical interconnection portions of the conductor pattern, and the highly conductive material of these pads may be required to be bonded to another, smaller type of electrical interconnection members, for example, said other type of electrical interconnection members comprising leads or conductive mounting bumps, said other type of electrical interconnection members being between the pads and at least some of the constituent circuit elements of the circuit assembly.Usually, it is required to bond these other type of electrical interconnection members to the pads by employing, for example, ultrasonic or thermo-compression bonding techniques. It is re quiredthatthe material of the highly conductive layer facilitates the bonding in a reliable manner of both types of electrical interconnection members referred to above, respectively, to terminals, and to pads, of the conductor pattern.
The materials of the substrate, and at least the thin highly conductive layer, are required to have substantially the same coefficient of linear expansion, and the substrate is required to have a high coefficient of thermal conductivity.
It is an object of the present invention to provide an electrical circuit assembly of a novel and advantageous construction, and in particular having a substrate, and a thin highly conductive layer, with the required characteristics referred to above.
A suitable substrate is of a metal, is of the same metal as the thin highly conductive layer, a suitable metal for the thin highly conductive layer and the substrate being aluminium, and, because a metallic substrate is provided, a layer of electrical insulating material is required to be provided between the substrate and the thin highly conductive layer.
According to one aspect of the present invention an electrical circuit assembly includes a thin conductive layer of aluminium supported in a major surface of an at least substantially planar substrate of aluminium, with at least a deposited layer of electric- al insulating material therebetween.
The deposited layer of electrical insulating material may be of any convenient material, for example, comprising silicon oxide, or silicon nitride, or silicon oxynitride, or sapphire, or aluminium oxide. A deposited layer of any such material is advantageous in that the provision of a substantially non-porous layer is facilitated; and the surface of the layer remote from the substrate is more substantially uniformly flat than otherwise would be the case if the layer of electrical insulating material was provided in a different way.
A thin layer of resistive material, and/or a thin layer of another highly conductive material than aluminium, may be deposited intermediate between the deposited layer of electrical insulating material and the thin aluminium layer.
The aluminium substrate may comprise a ground plane of the electrical circuit assembly.
According to another aspect the present invention comprises a method of manufacturing an electrical circuit assembly including providing an at least substantially planar substrate of aluminium, depositing upon one major surface of the sustrate a layer of electrical insulating material, and depositing a thin highly conductive layer of aluminium to the supported upon said one major surface of the substrate.
Each deposited constituent layer of the electrical circuit assembly may be provided sequentially within the same deposition cell.
One embodiment of an electrical circuit assembly will now be described by way of the present invention.
A planar substrate of aluminium has major surfaces 5 centimetres square. On one major surface of the substrate is deposited a layer of silicon oxide of a uniform thickness of 1 micrometre. The deposited silicon oxide layer adheres well to the aluminium substrate, has a density such that it is substantially non-porous, and the surface of the layer remote from the substrate is more substantially uniformly flat than otherwise would be the case if the layerwas provided in a different way. The silicon oxide is obtained by the thermal decomposition of silane in oxygen.
An initially continuous thin layer of aluminium is deposited upon the silicon oxide layer. The aluminium layer has a uniform thickness of 1.5 micrometre, and adheres well to the silicon oxide layer.
The aluminium is evaporated onto the silicon oxide layer employing a resistance heating furnace.
The silicon oxide layer, and the aluminium layer, are provided sequentially within the same deposition cell.
Subsequently, portions of the initially continuous thin aluminium layer are etched selectively, employing a photolithographic step, to provide a constituent layer of a conductor pattern of the circuit assembly. The etchant used is a mixture of phosphoric and nitric acids.
Alternatively, a thin aluminium layer of the desired shape in plan of the conductor pattern is provided by depositing the aluminium selectively upon the appropriate portions of the silicon oxide layer, for example, the other portions of the silicon oxide layer being covered by a mask during the aluminium deposition process step, and subsequently the mask is removed in any convenient way. The aluminium either is not deposited upon the mask, or the aluminium deposited upon the mask is removed with the masking material.
The shape in plan of the conductor pattern is such that terminals for the circuit assembly are provided adjacent to the periphery of the major surface of the substrate supporting the conductor pattern, the condutor pattern providing a constituent part of the terminals. The terminals are completed by providing a layer of nickel upon each of the portions of aluminium of the terminals, so that one type of electrical interconnection members can be bonded in a reliable manner to the terminals employing a suitable tin-based solder. Said one type of electrical interconnection members, also required to be of a material capable of being soldered in a reliable manner, may comprise leads extending from, but not included within, the circuit assembly; or may comprise conductive mounting bumps, which, if provided with in the circuit assembly, are formed in any convenient way.The nickel layers adheres well to both the aluminium layer, and to the solder. It is required that only the terminal portions of the aluminium layer are coated with nickel, and nickel may be deposited selectively on these portions by masking the remainder of the conductor-providingsurface of the assembly at this stage, subsequently the masking material being removed, leaving the desired nickel layers. Alternatively, an initially continuous layer of nickel is deposited, and the desired nickel layer of the terminals are provided by employing a photolithographic etching step in which the under-lying layers of the circuit assembly are unaffected. The nickel is deposited upon the aluminium layer by being evaporated in an electrical resistance furnace.
if it is not required to bond these said one type of electrical interconnection members to the terminals of the circuit assembly be soldering, the nickel layers are not provided, the terminals comprising only portions of the thin aluminium layer. Hence, these electrical interconnection members are required to be of a material capable of being bonded in a reliable manner to the portions of the aluminium layer included within the terminals. Desirably, intermetallic bonds are obviated by these electrical interconnection members also being of aluminium. Reliable bonds can be made between the aluminium layer and electrical interconnection members, of appropriate metals, by employing ultrasonic or thermocompression bonding techniques.
The conductor pattern also provides electrical interconnections between constituent circuit elements of the circuit assembly and the terminals, and may provide electrical interconnections between the constituent circuit elements. Pads may be provided by the electrical interconnection portions of the conductor pattern, and the aluminium of these pads may be required to be bonded to another, smaller, type of electrical interconnection members between the pads and at least some of the constituent circuit elements of the circuit assembly. For example, these other, smaller, type of electrical interconnection members comprise leads or conductive mounting bumps, and apart from being unable to be soldered to the pads, may be bonded to the pads in anyway referred to above for bonding said one type of electrical interconnection members to the terminals of the circuit assembly.
Conveniently, the aluminium substrate comprises a ground plane of the electrical circuit assembly.
The electrical circuit assembly is completed by at4 least the major substrate surface bearing the conductor pattern, and the constituent electrical elements, being encapsulated, for example, by being covered with a suitable potting compound, or being covered by a closure member, with the space between the closure member and the substrate being substantially evacuated, or filled with an inert gas, such as nitrogen; or by the circuit assembly being mounted with other such electrical circuit assemblies within a more complex electrical circuit assembly, which more complex electrical circuit assembly is encapsulated, for example, in one of the ways referred to above; to ensure stability in the manner of operation of the electrical circuit assembly under normally-encountered operating condi tions.
A deposited electrical insulating layer may be of any suitable material, for example, comprising silicon nitride, silicon oxynitride, sapphire, or aluminium oxide. A deposited layer of any such material is advantageous in that the provision of a substantially non-porous layer is facilitated; and the surface of the layer remote from the substrate is more substantially uniformly flat than otherwise would be the case if the layer of electrical insulating material was provided in a different way.
The thin highly conductive layer of aluminium may be supported on a thin resistive layer, the thin resistive layer being contiguous with a deposited silicon oxide electrical insulating layer. The thin resistive later may be of a nickel-chromium alloy having a sheet resistivity of 300 ohms per square.
The thin resistive layer is deposited in a sputtering process, and the layer has a uniform thickness of 0.01 micrometre, the layer being deposited in an initially continuous form. The thin resistive layer adheres well to the deposited silicon oxide layer, Next a layer of palladium is deposited upon the thin resistive layer. The palladium layer has a uniform thickness of 0.06 micrometre and, is deposited in an initially continuous form, the palladium being evaporated by employing a resistance heating furnace.
The palladium layer adheres well to the thin resistive layer. Athin layer of aluminium, in an initially continuous form, is deposited upon the palladium layer. The aluminium layer has a uniform thickness of 1.5 micrometre, and adheres well to the palladium layer. The aluminium is evaporated onto the palladium layer employing a resistance heating furnace.
The palladium layer prevents the diffusion of the material of the thin resistive layer into the thin aluminium layer. The silicon oxide layer, and the different metallic layers, are provided sequentially in the same deposition cell. The thin resistive layer, palladium, and aluminium have substantially the same coefficient of linear expansion.
When all these three metallic layers are in an initially continuous form, in a first photolithographic etching step, portions of the aluminium layer, the palladium layer, and the thin resistive layer, each selectively are etched, these layers being etched sequentially, employing as etchants, respectively, a mixture of phosphoric and nitric acids, a mixture of potassium iodide and iodine, and a mixture of hexanitro ammonium cerate and acetic acid. In a second photolithographic etching step further portions of the aluminium layer and the palladium layer each selectively, are etched, and these two layers are etched sequentially. By the two photolithographic etching steps, together, there is defined the required conductor pattern and the constituent thin film resistors of the circuit assembly.The portions of the thin resistive layer and the palladium layer remaining, and supporting the remaining aluminium portions, are considered to be also portions of the conductor pattern.
Another material, or combination of materials, respectively, of an intermediate layer, or combination of layers, to that described in the preceding paragraph, may be required to be provided between the thin highly conductive layer of aluminium, and the deposited layer of electrical insulating material on the aluminium substrate. If an intermediate thin resistive layer of a material other than a nickelchromium alloy is provided it may not be necessary to provide a barrier layer between the thin aluminium layer and the thin resistive layer. In addition, or alternatively, such a layer may be of electrical insulating material, for example, comprising aluminium oxide obtained by anodising the major surface of the aluminium substrate to support the required conductor pattern.Such an aluminium oxide layer is significantly thicker than a coating of aluminium oxide inevitable present on the surface of an aluminium member due to reaction of the aluminium with its ambient. The provision of an electrical insulating layer, between the aluminium substrate and the deposited silicon oxide layer, enables the deposited silicon oxide layer to bethinnerthan otherwise would be the case.
It is required that any thin layer of resistive material, or highly conductive material other than aluminium, provided on the substrate has subsequentially the same coefficient of linear expansion as the aluminium substrate.
It is required that the aluminium layer is securely bonded to other, contiguous layers of the circuit assembly. Usually, the aluminium adheres well to any other metal, or metal alloy, layer. In addition, aluminium generally adheres well to layers of electrical insulating material which conveniently can be provided.
Cross-overs may be provided within the circuit assembly, a second conductor pattern of aluminium being provided, at least one portion of the second conductor pattern being provided, on a layer of electrical insulating material, on a portion of the first conductor pattern.
Electrical circuit assemblies in accordance with the present invention, including at least one conductor pattern, at least partially comprising aluminium, are not as likely to be damaged by radiation as a circuit assembly with a conductor pattern of a metal of a higher atomic weight, for example, the conductor pattern being of gold.

Claims (12)

1. An electrical circuit assembly including a thin highly conductive layer of aluminium supported on a major surface of an at least substantially planar substrate of aluminium, with at least a deposited layer of electrical insulating material therebetween.
2. A circuit assembly as claimed in claim 1 in which the deposited layer of electrical insulating material is of silicon oxide.
3. A circuit assembly as claimed in claim 1 or claim 2 in which a thin layer of resistive material is deposited intermediate between the deposited layer of electrical insulating material and the thin aluminium layer.
4. A circuit assembly as claimed in any one of the preceding claims in which a thin layer of another highly conductive material than aluminium is deposited intermediate between the deposited layer of electrical insulating material and the thin aluminium layer.
5. A circuit assembly as claimed in any one of the preceding claims in which terminals for the circuit assembly are completed by providing layers of nickel on portions of the thin aluminium layer, electrical interconnction members to be soldered to the nickel layers of the terminals by employing a suitable tin-based solder.
6. A circuit assembly as claimed in any one of the preceding claims, including cross-overs, a second thin aluminium layer being provided, at least one portion of the second thin aluminium layer being, on a layer of electrical insulating material, on a portion of the first aluminium layer.
7. A circuit assembly as claimed in claim 6 in which the layer of electrical insulating material is of silicon oxide.
8. A circuit assembly as claimed in any one of the preceding claims in which the aluminium substrate comprises a ground plane of the circuit assembly.
9. A method of manufacturing an electrical circuit assembly of a form as claimed in any one of the preceding claims including providing an at least substantially planar substrate of aluminium, depositing upon one major surface of the substrate a layer of electrical insulating material, and depositing a thin highly conductive layer of aluminium to be supported upon said one major surface of the substrate.
10. A method as claimed in claim 10 in each deposited constituent layer of the electrical circuit assembly is provided sequentially within the same deposition cell.
11. An electrical circuit assembly substantially of any one of the different forms described herein.
12. A method of manufacturing an electrical circuit assembly substantially of any one of the different methods described herein.
12. A method of manufacturing an electrical circuit assembly substantially of any one of the different methods described herein.
New claims or amendments to claims filed on 7 April 1981 Superseded claims 1 to 12 New or amended claims:
1. An electrical circuit assembly including a thin conductor pattern of aluminium supported on a major surface of an at least substantially planar substrate of aluminium, with at least a deposited layer of electrical insulating material therebetween.
2. A circuit assembly as claimed in claim 1 in which the deposited layer of electrical insulating material is of silicon oxide.
3. A circuit assembly as claimed in claim 1 or claim 2 in which a thin layer of resistive material is deposited intermediate between the deposited layer of electrical insulating material and the thin aluminium conductor pattern.
4. A circuit assembly as claimed in any one of the preceding claims in which a thin layer of another conductor pattern material than aluminium is deposited intermediate between the deposited layer of electrical insulating material andthethin aluminium conductor pattern.
5. A circuit assembly as claimed in any one of the preceding claims in which terminals for the circuit assembly are completed by providing layers of nickel on portions of the thin aluminium conductor pattern, electrical interconnection members to be soldered to the nickel layers of the terminals by employing a suitable tin-based solder.
6. A circuit assembly as claimed in any one of the preceding claims, including cross-overs, a second thin aluminium conductor pattern, being provided, at least one portion of the second thin aluminium, conductor pattern being, on a layer of electrical insulating material, on a portion of the aluminium conductor pattern.
7. A circuit assembly as claimed in claim 6 in which the layer of electrical insulating material is of silicon oxide.
8. A circuit assembly as claimed in any one of the preceding claims in which the aluminium substrate comprises a ground plane of the circuit assembly.
9. A method of manufacturing an electrical circuit assembly of a form as claimed in any one of the preceding claims including providing an at least substantially planar substrate of aluminium, depositing upon one major surface of the substrate a layer of electrical insulating material, and depositing a thin conductor pattern layer of aluminium to be supported upon said one major surface of the substrate, and forming a conductor pattern from the aluminium layer.
10. A method as claimed in claim 10 in each deposited constituent layer of the electrical circuit assembly is provided sequentially within the same deposition cell.
11. An electrical circuit assembly substantially of any one of the different forms described herein.
GB8013164A 1980-04-22 1980-04-22 Thin film circuit assembly Expired GB2074793B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8013164A GB2074793B (en) 1980-04-22 1980-04-22 Thin film circuit assembly

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8013164A GB2074793B (en) 1980-04-22 1980-04-22 Thin film circuit assembly

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GB2074793A true GB2074793A (en) 1981-11-04
GB2074793B GB2074793B (en) 1983-09-07

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0092019A2 (en) * 1982-04-19 1983-10-26 Olin Corporation Improved semiconductor package
EP0099258A2 (en) * 1982-07-14 1984-01-25 United Kingdom Atomic Energy Authority Substrates for electronic devices
GB2162694A (en) * 1984-08-04 1986-02-05 British Aerospace Printed circuits
EP0186655A2 (en) * 1984-12-27 1986-07-02 VOEST-ALPINE Aktiengesellschaft Process for making a composite circuit board
US4866571A (en) * 1982-06-21 1989-09-12 Olin Corporation Semiconductor package
US5014159A (en) * 1982-04-19 1991-05-07 Olin Corporation Semiconductor package

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0092019A2 (en) * 1982-04-19 1983-10-26 Olin Corporation Improved semiconductor package
EP0092019A3 (en) * 1982-04-19 1985-12-27 Olin Corporation Improved semiconductor package
US5014159A (en) * 1982-04-19 1991-05-07 Olin Corporation Semiconductor package
US4866571A (en) * 1982-06-21 1989-09-12 Olin Corporation Semiconductor package
EP0099258A2 (en) * 1982-07-14 1984-01-25 United Kingdom Atomic Energy Authority Substrates for electronic devices
EP0099258A3 (en) * 1982-07-14 1985-11-06 United Kingdom Atomic Energy Authority Substrates for electronic devices
GB2162694A (en) * 1984-08-04 1986-02-05 British Aerospace Printed circuits
EP0186655A2 (en) * 1984-12-27 1986-07-02 VOEST-ALPINE Aktiengesellschaft Process for making a composite circuit board
EP0186655A3 (en) * 1984-12-27 1986-10-22 VOEST-ALPINE Aktiengesellschaft Process for making a composite circuit board

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