JPS58212271A - Solid-state image pickup element - Google Patents
Solid-state image pickup elementInfo
- Publication number
- JPS58212271A JPS58212271A JP57095126A JP9512682A JPS58212271A JP S58212271 A JPS58212271 A JP S58212271A JP 57095126 A JP57095126 A JP 57095126A JP 9512682 A JP9512682 A JP 9512682A JP S58212271 A JPS58212271 A JP S58212271A
- Authority
- JP
- Japan
- Prior art keywords
- electrons
- region
- channel
- type
- excited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000003384 imaging method Methods 0.000 claims description 4
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 108091006146 Channels Proteins 0.000 description 22
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 4
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 4
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は重荷結合素子（ｃｃｎ）型の固体撮像素子に関
Ｔる。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a heavy coupled device (CCN) type solid state imaging device.
近年、テレビカメラに用いる為のこの種固体撮像素子の
開発が盛んに行なわれており５本願出願人に於いても、
Ｔでに特願昭５４−８４２６７号Ｃでクロスゲート型の
固体撮像素子を提案している。In recent years, this type of solid-state imaging device for use in television cameras has been actively developed, and the applicant of the present application also
In Japanese Patent Application No. 54-84267C, T.T. proposed a cross-gate type solid-state image sensor.
第１図（ａ）に従来のクロスゲート型の固体撮像素子の
平面図、同図（ｂ）に同図（、）に於けるＡ−Ａ線断面
図、を示Ｔ０これ等の図に示Ｔ如く、従来素子は、この
場合Ｐ型の半導体基板（１）上に透明な絶縁膜（２）を
介し、絶縁状態で複数の上層電極（３１・・・と複数の
下層電極（４（・・・とを直交配置せしめ、これ等り層
及び下＠電極（３１・・・、（４）・・・、で囲まれる
隙間を光入射窓として構成し、この入射窓に依って露出
した半導体基板（１）にＮ型領域からなる受光部旧）・
・・を構成したものである。そして、この半導体基板（
１）には、この場合上層電極１３１・・・に沿ってＰ型
のチャンネルストッパ０力・・・が形成されており、各
ストッパａ２１は上記受光部Ｑｌｌ・・・に接する箇所
の一つおきに、その巾が拡張され、これに依って隣接す
るチャンネルストッパ０２１・・・と相補的な凹凸を形
成している。さらに、このチャンネルストッパ（１２１
・・・間にＮ型領域からなるチャンネルＱ３１・・・が
設けられ、これ等各チャンネル（１３１・・・は夫々複
数の上記受光部旧）・・・に接して蛇行している。FIG. 1(a) is a plan view of a conventional cross-gate solid-state image sensor, and FIG. 1(b) is a cross-sectional view taken along line A-A in FIG. As shown in T, the conventional element has a plurality of upper layer electrodes (31...) and a plurality of lower layer electrodes (4... ... are arranged perpendicularly to each other, and the gap surrounded by these layers and the lower @electrodes (31..., (4)...) is configured as a light entrance window, and the semiconductor exposed by this entrance window is The light receiving part consisting of an N-type region on the substrate (1) (old)
It is composed of... And this semiconductor substrate (
1), in this case, P-type channel stoppers 0 force... are formed along the upper layer electrodes 131..., and each stopper a21 is placed at every other point in contact with the light receiving part Qll... , its width is expanded, thereby forming unevenness complementary to the adjacent channel stoppers 021 . Furthermore, this channel stopper (121
. . . A channel Q31 . . . consisting of an N-type region is provided between them, and these channels (131 . . . are the plurality of light receiving portions) . . . meander in contact with each other.
斯様な構成の固体撮像素子は、奇数列の下層電極＋イ＋
・・・をＯＮにした状態で、受光部ＧＤ・・・で発生す
る入射光量に応じた電荷を第１図の実線矢印で示Ｔ如く
、この受光部ａｂｎ・・・から下層電極１４）下のチャ
ンネル０，１位置■に導入する。その後、偶数列の上層
電極（５１・・・と偶数列の下層電極（４）・・・と乞
１次に奇数列の上層電極（３′１と奇数列の下層電極（
４１とを。A solid-state image sensor with such a configuration has lower electrodes in odd-numbered rows.
. . is turned on, charges corresponding to the amount of incident light generated in the light receiving portion GD are transferred from the light receiving portion abn... to the bottom of the lower electrode 14) as shown by the solid line arrow T in Fig. 1. Introduce it to channels 0 and 1 positions ■. After that, the upper layer electrode (51) of the even number row, the lower layer electrode (4) of the even number row, the upper layer electrode (3'1) of the odd number row, and the lower layer electrode (3'1) of the odd number row.
41.
順次ＯＮに切り換える事に依って、上述の電荷はチャン
ネル（１３１位置のから■、◎、■、■、・・・と蛇行
して転送され、斯る素子の出力端（図示せず）から画像
信号として外部へ出力される。By sequentially switching ON, the above-mentioned charges are transferred in a meandering manner from the channel (position 131 to ■, ◎, ■, ■, etc.), and an image is generated from the output terminal (not shown) of such an element. Output to the outside as a signal.
上述の如き従来の固体撮像素子は、受光部ｆｉ１１に電
極がないので、入射光を減衰せしめる事なく直接受光で
きる利点を備えているが、この受光部（１１１のポテン
シャルを制御できず１周囲の電極（３１・・・。The conventional solid-state image sensor as described above has the advantage of being able to directly receive incident light without attenuating it because the light receiving part fi11 has no electrode. However, the potential of this light receiving part (111) cannot be controlled and the Electrode (31...
（４）・・・の印加電圧の影響を受けて、受光部αｌ）
のボテ・ ′１１
ンシャルは非常に不安定なものとなる欠点がありた。即
ち１例えばチャンネル０位置◎に転送されでいる電荷が
次の位置＠４■に転送されようとＴる時、チャンネル０
３と同導電型の受光部Ｑｌｌに形成される不安定なポテ
ンシャルに依って、この受光部ｆｉｌ＋がチャンネル化
されてしまい、＠１図の破線矢印で示Ｔ如く、転送電荷
が受光部α１）ナバイパスして位置のに逆流してしまう
惧れがあった。(4) Under the influence of the applied voltage of ..., the light receiving part αl)
The botential had the disadvantage of being extremely unstable. That is, 1, for example, when the charge that has been transferred to channel 0 position ◎ is about to be transferred to the next position @4■, channel 0
Due to the unstable potential formed in the light receiving part Qll, which has the same conductivity type as 3, this light receiving part fil+ becomes a channel, and as shown by the broken line arrow T in Figure @1, the transferred charge is transferred to the light receiving part α1). There was a risk that the flow would flow backwards into the position.
斯様な受光部αＢのチャンネル化を防止Ｔる為に。In order to prevent such channelization of the light receiving section αB.
チャンネルａ３とは異なる導電型にて受光部ａｌｌ全体
を構成下る事も考えられるが、この場合には、基板＋１
１と受光部ａ０とが同導電型となってしまい、受光部ｆ
ｉｌｌｃ Ｐ Ｎ接合が構成されなくなる不都合がある
。即ち、受光部（ＩＤ１”： Ｐ Ｎ接合がない場合に
は。It is also possible to construct the entire light receiving part all with a conductivity type different from that of channel a3, but in this case, the substrate +1
1 and the light receiving part a0 have the same conductivity type, and the light receiving part f
There is a disadvantage that an illc PN junction is not formed. That is, when there is no light receiving section (ID1": PN junction).
入射光に依り、受光部ｆ１１１にて励起された電荷は。The charges excited in the light receiving part f111 by the incident light are as follows.
チャンネル０３１に導入されるまでに再結合されてしま
う確率が高くなり、結局光感度の低下を招く欠点がある
。また受光部（１１）に於いて生じる電荷の内。There is a high probability that the light will be recombined before it is introduced into the channel 031, which has the disadvantage of eventually causing a decrease in photosensitivity. Also, among the charges generated in the light receiving section (11).
受光部σＢと連なる基板（１）内部の深い箇所で励起さ
れる長波長光（赤色−）に依る電荷の発生量が。The amount of charge generated due to long wavelength light (red -) excited in a deep location inside the substrate (1) connected to the light receiving part σB.
受光部１１１の表面付近で励起される短波長光（青色光
）に依る電荷の発生量より多くなるので、みかけ上、赤
色光に対して青色光の感度が低下Ｔる欠点がある。Since the amount of charge generated is larger than that due to the short wavelength light (blue light) excited near the surface of the light receiving section 111, there is a drawback that the sensitivity of blue light appears to be lower than that of red light.
本発明は斯る点に鑑みて為され、受光部のチャンネル化
を防止しながらＰＮ接合を構成したクロスゲート型の固
体撮像素子を提供Ｔるものである。The present invention has been made in view of these points, and provides a cross-gate type solid-state imaging device in which a PN junction is formed while preventing the light-receiving portion from becoming a channel.
第２図（、）に本発明の固体撮像素子の平面図を示し、
同図（ｂ）にそのＡＩ −Ａ＃線断面図を示Ｔ０これ等
の肉に於いて、 ＋１１． ＋２１．１３１． ＋４１
は＠１図と同様にＰ型の半導体基板、絶縁膜、上層電極
。FIG. 2 (,) shows a plan view of the solid-state image sensor of the present invention,
Figure (b) shows a sectional view taken along the line AI-A#.T0 In these meats, +11. +21.131. +41
As in Figure @1, it is a P-type semiconductor substrate, an insulating film, and an upper layer electrode.
下ｌｌ１１１Ｉ極を示しており、この半導体基板（１）
には従来Ｗ子と同じくＰ型のチャンネルストッパａ３・
・・。The lower ll111I pole is shown, and this semiconductor substrate (1)
The P type channel stopper A3 is the same as the conventional W child.
....
Ｎ型のチャンネル（１３１・・・か形成されている。本
発明素子が従来素子と異なる所は、受光部Ｉにチャンネ
ルＱ５）とは逆導電型の第１受光領域（１５１と、チャ
ンネルα３）と同導電型の１ｇ２受光領域ａ６１と、を
共に設け、これ等両ｆＩＲ埴（＋５１（１６１に依って
ＰＮ接合を構成した点にある。詳しくは１本実施例の場
合、受光部＊４）Ｑ）Ｐ型の第１受光領域（！５１（１
５１は下層電極（４）（４）・・・下のＮ型のチャンネ
ル（１３）と接して並行しており、Ｎ型の第２受光領域
（１６１は上記各第１受光領域＋＋５）（１５１間に挾
まれて延在し、その−喘が上層電極（３１下のＮ型のチ
ャンネル（１３）に連続している。An N-type channel (131...) is formed.The difference between the device of the present invention and the conventional device is that the first light receiving region (151 and channel α3) of a conductivity type opposite to that of the channel Q5 in the light receiving portion I is formed. and a 1g2 light-receiving region a61 of the same conductivity type, and a PN junction is formed by using both fIR hani (+51 (161). For details, see 1. In the case of this embodiment, the light-receiving section *4). Q) P-type first light receiving area (!51(1
Reference numeral 51 indicates the lower electrode (4) (4)...which is in contact with and parallel to the lower N-type channel (13), and is connected to the N-type second light-receiving region (161 is each of the above-mentioned first light-receiving regions ++5) (151 The upper layer electrode (31) extends below the N-type channel (13).
斯る固体撮像素子の一例を風体数値を挙げて述べる。先
ず半導体基板ＩＩＩとしては比抵抗２０Ω釧のＰ型シリ
コンを用い、Ｐ型のチャンネルストッパ０ｚは該基板１
０にボロンを８ＱＫｅＶでイオン注入し、その製産を２
Ｘ１０”／ｃＪとしたものである。その後、基板（１）
表面を熱酸化して二酸化シリコンからなる厚さ１４００
′ｉの透明な絶縁膜１２１を形成し、さらにその上から
燐を１２ＱＫａＶでイオン注入し、その濃度を２×１０
７ｄＪと下る事に依ってチャンネルストッパｆ１２１以
外のチャンネルｆｉ３を含む基板１１）表面をＮ型化す
る。つづいて、絶縁膜（２）上にポリシリコンにて下層
電極＋４１Ｔ４１・・・及び絶縁状態で上層電極１３１
ｔ３１・・・を形成Ｔる。さらに、受光部α１：の中央
の第２受光領域（１６Ｊ＠所をレジストで被覆してボロ
ンを１００に＠Ｖでイオン注入し。An example of such a solid-state image sensing device will be described with reference to air flow numerical values. First, P-type silicon with a specific resistance of 20Ω is used as the semiconductor substrate III, and the P-type channel stopper 0z is formed on the substrate 1.
Boron is ion-implanted into 0 at 8QKeV, and the production is 2
X10"/cJ. After that, the substrate (1)
The surface is thermally oxidized and made of silicon dioxide with a thickness of 1400 mm.
A transparent insulating film 121 is formed with
7 dJ, the surface of the substrate 11) including the channel fi3 other than the channel stopper f121 is made into an N type. Next, the lower layer electrode +41T41... is made of polysilicon on the insulating film (2), and the upper layer electrode 131 is insulated.
t31... is formed. Furthermore, the central second light receiving region (16J@) of the light receiving portion α1: was covered with resist, and boron ions were implanted at 100@V.
その濃度をＩ Ｘ １ ｏ”／Ｊ とする事に依って、
Ｐ型の第１受光領域鉗を形成し、第１及び第２受光領域
（＋５１． （１６１からなるＰＭＮ接合構成する。By setting its concentration as I x 1 o”/J,
A P-type first light receiving region is formed, and a PMN junction consisting of the first and second light receiving regions (+51. (161) is formed.
上述の如き構成の本発明固体撮像素子は、先部″・変換
部間に於いて、Ｐ型及びＮ型からなる第１及び勇２受光
領域（１５１ｎｅに光が入射されると、その入射光量に
応じて電荷、即ち電子が励起され、この時の電子の励起
は受光部［１４＋の表面付近の＠１及び第２受光領域（
Ｉ５！１１．６１に依るＰＮ接合位置及び第２受光領域
（１６１と基板１１１とに依るＰＮ接合位置にて集中し
て起こるので、基板ｔｉ＋内部の深い箇所で励起される
長波長光に依る電子の発生値を抑制して、受光部ａ４の
表面付近で励起される短波長光に依る電子の発生量を増
強しているつじかも励起玉子は。In the solid-state image sensor of the present invention having the above-described configuration, when light is incident on the first and second light-receiving regions (151ne) consisting of P type and N type between the tip part and the conversion part, the amount of incident light is Charges, that is, electrons are excited in response to
I5! 11. Since it occurs concentrated at the PN junction position due to 11.61 and the PN junction position due to the second light receiving region (161 and the substrate 111), electrons due to long wavelength light excited deep inside the substrate ti+ The excited egg suppresses the generation value of and enhances the amount of electrons generated by the short wavelength light excited near the surface of the light receiving part a4.
Ｎ型の第２受光領域０６；に集中しにの電子と共に発生
した正孔はＰ型の第１受ｆｔ、領域（１５１Ｑ５１ｃ吸
収される事になるので、光電変換期間中に励起電子と正
孔とが再結合してしまう惧れはない。この光電変換期間
に於いては、奇数列の下層電極（４）・・・は正の電圧
が印加されてＯＮ状態となっているので。Holes generated together with electrons concentrated in the N-type second light-receiving region 06; are absorbed by the P-type first light-receiving region (151Q51c), so that excited electrons and holes are concentrated in the N-type second light-receiving region 06; There is no risk of recombination between the two.During this photoelectric conversion period, the lower electrodes (4) in odd-numbered columns are applied with a positive voltage and are in the ON state.
各受光部Ｃｌ４１ Ｃ１４１・・・にて得られる電子は
、、１例えば第２１−１
図の受光部■＾の電子は実線矢印で示す如く、夫々上層
電極１３１１３１下のチャンネル（１３位置の又は■を
介して共に奇数列の下層電極（４′１下のチャンネルａ
３位置のに蓄積される。次の電荷転送期間中に於いては
、１ｌＷ１図の従来素子と同じく、各電極（３１・・・
。The electrons obtained in each of the light receiving sections Cl41, C141..., for example, the electrons of the light receiving section ■^ in FIG. through the lower electrodes of odd rows (channel a under 4'1)
It is accumulated in the 3rd position. During the next charge transfer period, each electrode (31...
.
１４）・・・を正の電、圧に依るＯＮ状態に順次切り換
える事に依り、チャンネルａ３位置のの電子を位置の。14) By sequentially switching .
◎、■、■・・・と蛇行して転送し、外部へ出力Ｔる事
になる。この時、チャンネル（１３位置の、６ｉｔ受光
部（１４１・・・の第１受光領域＋１５１（１５１に接
しており、この第１受光預域（１５１（１５１はＮ型の
チャンネル（１３１とは逆導電型のＰ型領域であるので
、下層電極（４）・・・の正の電圧の影響に依る不安定
なポテンシャルの発生が抑制され、転送電子がこの受光
部（＋４）をバイパスする惧れはない。The data will be transferred in a meandering manner as ◎, ■, ■, etc., and will be output to the outside. At this time, the channel (13th position, 6it light receiving area (141...) is in contact with the first light receiving area +151 (151), and this first light receiving area (151 (151 is an N type channel (131 is the opposite) Since it is a P-type conductive region, the generation of unstable potential due to the influence of the positive voltage of the lower electrode (4) is suppressed, and there is a risk that the transferred electrons will bypass this light receiving part (+4). There isn't.
本発明の固体撮１１ｉｉ！累子は以上の説明から明らか
な如く、クロスゲート型素子であって、受光部の半導体
基板の露出箇所に該箇所とは逆の導電′型の領域を部分
的に設ける事に依って、この露出箇所ＣＰＮ接合部を延
在せ六めたものであるので、上記受光部の表面付近に形
成されたＰＮ接合Ｍ５に依って、短波長光、即ち青色光
に依る励起電荷を集中して得る事かでき、斯る素子の波
長感度特性な平坦にＴる事が可能になる。しかも、この
ＰＮ接合に依って電子と正孔が分離される為に励起電荷
の再結合が防止され、この受光部での光感度の向上が図
れる。さらに上記受光部に接して形成されるチャンネル
とは逆導電型の領域を備える事になるので、これに依っ
てチャンネルを転送されつつある電荷がこの受光部をバ
イパスする事なく、従来素子で生じていた電荷の逆流等
の事故が防止で１机
ツ
ー従って１本発明素子に依れば、Ｓ／Ｎ比の高い忠実な
再生画像信号を得る事ができる。Solid-state photography 11ii of the present invention! As is clear from the above explanation, the resistor is a cross-gate type element, and this can be achieved by partially providing an area of conductivity type opposite to that of the exposed area of the semiconductor substrate of the light-receiving part. Since the exposed CPN junction is extended, the excitation charges caused by short wavelength light, that is, blue light, are concentrated and obtained by the PN junction M5 formed near the surface of the light receiving part. This makes it possible to flatten the wavelength sensitivity characteristic of such an element. Furthermore, since electrons and holes are separated by this PN junction, recombination of excited charges is prevented, and the photosensitivity of this light receiving section can be improved. Furthermore, since it has a region of opposite conductivity type to the channel formed in contact with the light-receiving part, this prevents the charges being transferred through the channel from bypassing the light-receiving part, which would otherwise occur in conventional elements. Accidents such as reverse flow of electric charge can be prevented, and therefore, by relying on the device of the present invention, a faithful reproduced image signal with a high S/N ratio can be obtained.
１８１図（ａ）及び（ｂ）は従来の固体撮像素子の平面
図、及び断面図、第２図（ａ）及び（ｂ）は本発明の固
体撮像素子の平面図、及び断面図。
である。
１１）・・・半導体基板、１２）・・・絶縁膜、（３１
・・・上層電極。
（４）・・・下層電極、旧）Ｉ・・・受光部、 ａｇ・
・・チャンネルストッパ、０３・・・チャンネル、０９
・・・第１受光領域、 （１６１・・・＄２受光領域。
＝４２５
第１図
（ｂ）
第２図
（Ｃ１）
Ａ′
４２６−
（ｂ）
１181(a) and (b) are a plan view and a sectional view of a conventional solid-state image sensor, and FIGS. 2(a) and (b) are a plan view and a sectional view of a solid-state image sensor of the present invention. It is. 11)... Semiconductor substrate, 12)... Insulating film, (31
...upper layer electrode. (4)... lower layer electrode, old) I... light receiving section, ag.
...Channel stopper, 03...Channel, 09
...First light receiving area, (161...$2 light receiving area. =425 Figure 1 (b) Figure 2 (C1) A' 426- (b) 1
Claims (1)
た絶縁膜と、該絶縁膜上に並行して配列された複数本の
下層電極と該下層電極上に絶縁して設けられた該下層電
極の配列方向と交差する方向に配列された複数本の上層
電極とからなり上記両電極とで囲まれる隙間を光入射窓
として受光部を構成した固体撮像素子に於いて、上記受
光部の半導体基板の露出箇所に該箇所とは逆の導電型の
領域を部分的に設ける事ｆ二依って、この露出箇所にＰ
Ｎ接合部を延在せしめた事を特徴とＴる固体撮像素子。1) - A conductive type semiconductor substrate, an insulating film formed on the semiconductor substrate, a plurality of lower layer electrodes arranged in parallel on the insulating film, and a plurality of lower layer electrodes provided insulated on the lower layer electrodes. In a solid-state image sensor, the light receiving section is composed of a plurality of upper layer electrodes arranged in a direction crossing the arrangement direction of the lower layer electrodes, and a gap surrounded by the two electrodes is used as a light entrance window. By partially providing a region of a conductivity type opposite to that of the exposed portion of the semiconductor substrate, P is applied to the exposed portion of the semiconductor substrate.
A solid-state imaging device characterized by an extended N junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57095126A JPS58212271A (en) | 1982-06-02 | 1982-06-02 | Solid-state image pickup element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57095126A JPS58212271A (en) | 1982-06-02 | 1982-06-02 | Solid-state image pickup element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58212271A true JPS58212271A (en) | 1983-12-09 |
| JPS6410985B2 JPS6410985B2 (en) | 1989-02-22 |
Family
ID=14129128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57095126A Granted JPS58212271A (en) | 1982-06-02 | 1982-06-02 | Solid-state image pickup element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58212271A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH034681U (en) * | 1989-06-06 | 1991-01-17 | ||
| JPH0360784U (en) * | 1989-10-18 | 1991-06-14 | ||
| JPH03112891U (en) * | 1990-03-01 | 1991-11-19 |
-
1982
- 1982-06-02 JP JP57095126A patent/JPS58212271A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6410985B2 (en) | 1989-02-22 |
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