JPS58211120A - Method for forming metallic pattern on light guide - Google Patents

Method for forming metallic pattern on light guide

Info

Publication number
JPS58211120A
JPS58211120A JP57093688A JP9368882A JPS58211120A JP S58211120 A JPS58211120 A JP S58211120A JP 57093688 A JP57093688 A JP 57093688A JP 9368882 A JP9368882 A JP 9368882A JP S58211120 A JPS58211120 A JP S58211120A
Authority
JP
Japan
Prior art keywords
film
pattern
light guide
resist
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57093688A
Other languages
Japanese (ja)
Inventor
Masahiko Enari
正彦 江成
Shigetaro Ogura
小倉 繁太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP57093688A priority Critical patent/JPS58211120A/en
Publication of JPS58211120A publication Critical patent/JPS58211120A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a pattern which prevents the deterioration of the performance of a thin-film light guide, by forming a metallic blank material film on the light guide only where a metallic film pattern is formed and at its circumference, and covering the metallic blank material film with a resist film except at a part to be etched and then etching the metallic film. CONSTITUTION:A thin Ti film is vapor-deposited on the X.Z plane of a dielectric substrate 1 of LiNbO3 single crystal, etc., which is cut along an Y axis and then heated at about 1,000 deg.C for five hours to form a thin-film light guide 2. After the surface of the light guide 2 is cleaned by an ultrasonic wave and then dried, a metallic layer 6 of Al, etc., is formed only at a pattern generation part for providing a comb-shaped electrode 5. The resist film 7' is formed over the layer 6 and the entire surface of the light guide and then a resist pattern 7' is formed on only the resist on the layer 6 by a lithography method. Plasma etching is carried out in an atmosphere of gaseous CCl4 to form a metallic pattern 6' and resist films 7 and 7' are peeled with acetone, etc. Thus, damage due to the etching of the light guide 2 is prevented to obtain an optical switching element, etc., without deteriorating its performance.

Description

【発明の詳細な説明】 本発明は、光スイツチング素子等に用いられる先導波路
において、光導波路に金属等の)くターンを形成する方
法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming turns made of metal or the like in an optical waveguide in a guiding waveguide used in an optical switching device or the like.

従来から第1図に示すように、誘電体基板F1にチタン
(Ti)膜等から成る薄膜導波路2を形成し、入射プリ
ズム3によりこの薄膜導波路2中に光りを導入する光導
波路が知られている。この光導波路を光スインチング素
f等として使用するために、薄膜導波路2を伝播する光
束りを偏向して、射出プリズム4から射出することが行
われている。そのための一つの手段として、薄膜導波路
2F−に櫛型電極5を形成して、この櫛型電極5に′屯
界を印加することにより薄膜導波路2中に弾+1表面波
を励起し、光束りをブラッグ回折して偏量することが実
施されている。
Conventionally, as shown in FIG. 1, an optical waveguide has been known in which a thin film waveguide 2 made of a titanium (Ti) film or the like is formed on a dielectric substrate F1, and light is introduced into the thin film waveguide 2 using an incident prism 3. It is being In order to use this optical waveguide as an optical switching element f etc., the light beam propagating through the thin film waveguide 2 is deflected and emitted from the exit prism 4. As one means for this purpose, a comb-shaped electrode 5 is formed in the thin-film waveguide 2F-, and a +1 surface wave is excited in the thin-film waveguide 2 by applying a field to the comb-shaped electrode 5. It has been practiced to polarize the light beam by Bragg diffraction.

この場合、薄膜導波路2上に櫛型電極5等の金属パター
ンを形成するには、パターンを形成丈べき金属を薄膜導
波路2の全面に蒸着し、リングラフィによってレジスト
パターンを形成し、エツチングにより目的の金属パター
ンを摺る工程によるのが連座である。
In this case, in order to form a metal pattern such as the comb-shaped electrode 5 on the thin film waveguide 2, a metal whose pattern is to be formed is deposited on the entire surface of the thin film waveguide 2, a resist pattern is formed by phosphorography, and then etched. This process is based on the process of printing the desired metal pattern.

この従来の金属パターン形成方法を第2図により更に詳
細に説明すると、(a)は基板1上に薄膜導波路2を有
する光導波路であり、(b)に示すようにこの薄膜導波
路2の全面にアルミニウム等の金属層6を真空蒸着等に
より被着する。そして、更にこの金属層6の上層として
、(C)に示すようにスピナー等によりレジスト膜7を
塗布し、(d)に示すようにリングラフィによりレジス
トパターン7′を形成する。この状態でエツチング液に
より金属層6をエツチングし、上部にレジスト膜ぐター
ン7′を有する金属パターン6′を形成し、最後にレジ
ストパターン7′を剥離すると、金属ノぐターン6′に
よる4篩型電極5が薄膜導波路2」一番こ生成されるこ
とになる。
This conventional metal pattern forming method will be explained in more detail with reference to FIG. A metal layer 6 of aluminum or the like is deposited on the entire surface by vacuum deposition or the like. Further, as an upper layer of this metal layer 6, a resist film 7 is applied using a spinner or the like as shown in (C), and a resist pattern 7' is formed by phosphorography as shown in (d). In this state, the metal layer 6 is etched with an etching solution to form a metal pattern 6' having resist film turns 7' on the top.Finally, when the resist pattern 7' is peeled off, four sieves formed by the metal groove turns 6' are formed. A mold electrode 5 is produced at the very beginning of the thin film waveguide 2.

しかしながら、この方法によると第2図(C)〜(d)
の過程で示すように、薄膜導波路2の表面全血にイf在
する金属層6をエツチングすることになり、エツチング
液が化学的に薄膜導波路2に作用し、或いはプラズマエ
ツチング等のドライエツチングの場合には化学的・物理
的に薄膜導波路2に作用するので、薄膜導波路2の表面
状態を荒したり、薄膜導波路2の屈折率を変化させる等
の悪影響を及ぼし、史には薄膜導波路2の破壊や光透通
挿(の低Fをもたらすなどの問題があ嗜る。
However, according to this method, Fig. 2 (C) to (d)
As shown in the process shown in FIG. In the case of etching, since it acts chemically and physically on the thin film waveguide 2, it has adverse effects such as roughening the surface condition of the thin film waveguide 2 and changing the refractive index of the thin film waveguide 2. There are problems such as destruction of the thin film waveguide 2 and low F of light transmission.

本発明の目的は、ト述の問題点を解消し、薄膜導波路に
悪影響を及ぼすことなく、先導波路に金属等のパターン
を形成する方法を提供することにあり、その要旨は、7
X* lり導波路1.に金属被膜等のパターンを形成す
る場合において、7専)IQ 4波路)−の前記パター
ンを形成する部分及びその近傍にパターンを形成する素
材被膜を設ける工程と、前記素材被膜と薄Iり導波路I
−の全面にレジスト膜を被覆する工程と、前記素材被膜
りのレジス;・膜にし・シストハターンを形成するに稈
と、エツチング液によりit1記素材被膜をエンチング
する工程と、薄11ジ導波路1−に残留しているiII
記レジしト欣を除去する工程とから成ることを特徴とす
る方法である。
An object of the present invention is to solve the above-mentioned problems and provide a method for forming a pattern of metal or the like on a leading waveguide without adversely affecting the thin film waveguide.
X* L waveguide 1. In the case of forming a pattern such as a metal coating on a substrate, a step of providing a material coating for forming a pattern on and in the vicinity of the portion where the pattern is to be formed, and a step of forming a material coating with the material coating and a thin I-conductor Wave path I
- a step of coating the entire surface of the material film with a resist film; a step of etching the material film of the thin 11-wire waveguide 1 with an etching solution; iIII remaining in -
This method is characterized by comprising a step of removing the registration mark.

本発明を第3図の実施例に基づいて詳細に説明する。な
お、第3図において第2図と回−の行司は同一の材料を
示すものとする。
The present invention will be explained in detail based on the embodiment shown in FIG. In addition, in FIG. 3, the material shown in FIG. 2 and the material shown in FIG.

第3図(a)の実施例においても、第2図(a)と同様
にノ、(板1」−に薄膜導波路2を形成した光導波路を
用いる。この光導波路は、Y軸を切断したニオブ酸リチ
ウム(LiNb03)の単結晶を、X軸方向2インチ、
Z軸方向1インチ、Y軸力向に厚さ1mmの大きさの基
板1として、x−Z平面にチタン膜を250人の厚みに
蒸着し、約1000°Cで5時間加熱し、チタンを熱拡
散して基板lよりも高い屈折率を有する薄膜導波路2を
形成する。そして、薄膜導波路2の表面を超音波洗浄し
た後に、エタノール蒸気中で十分に乾燥する。更に、(
b)に示すように櫛型電極5を設けるためのパターン作
成部分及びその近傍の例えばl Om mXl0mmの
部分のみに、電子ビーム赤青法によって、アルミニウム
等の金属層6を約2000人の厚みに被覆する。
Similarly to FIG. 2(a), the embodiment shown in FIG. 3(a) uses an optical waveguide in which a thin film waveguide 2 is formed on the (plate 1).This optical waveguide is cut along the Y axis. A single crystal of lithium niobate (LiNb03) was
A titanium film was deposited on the x-Z plane to a thickness of 250 mm on a substrate 1 having a size of 1 inch in the Z-axis direction and 1 mm in the Y-axis force direction, and was heated at about 1000°C for 5 hours to remove titanium. A thin film waveguide 2 having a higher refractive index than the substrate 1 is formed by thermal diffusion. After the surface of the thin film waveguide 2 is ultrasonically cleaned, it is sufficiently dried in ethanol vapor. Furthermore, (
As shown in b), a metal layer 6 made of aluminum or the like is formed to a thickness of approximately 2000 mm using the electron beam red-blue method only in the patterned area for providing the comb-shaped electrode 5 and in the vicinity thereof, for example, in a 10 mm x 0 mm area. Cover.

次に、(C)に示すようにスピナー等シこよりレジス)
 II! 7を金属層6及び薄膜導波路2の全面に厚さ
IILm程度塗布し、90°Cで30分間のプリベータ
を実施した後、(d)に示すように金属層6の1一層の
レジストill 7のみにマスクアライナによるリング
ラフィによってピッチ幅2gmの櫛型電極5のレジスト
パターン7′を形成する。そして、約120°Cの温度
で20分間のボストヘークを実施し、(e)に小すよう
に金属層6を四IJ化炭素(CCρ4)カス中で2分間
プラズマエツチングして金属パターン6′を形成し、最
後に(f)に示すようにアセトン(CH,C0CHう)
によりレジスト膜7を剥離し、金属B髪による櫛型゛電
極5を薄膜導波路2]−に得る。
Next, as shown in (C), press the spinner etc.
II! 7 is coated on the entire surface of the metal layer 6 and the thin film waveguide 2 to a thickness of about IILm, and after pre-baking at 90°C for 30 minutes, a single layer of resist 1 on the metal layer 6 is applied as shown in (d). A resist pattern 7' of comb-shaped electrodes 5 having a pitch width of 2 gm is formed by phosphorography using a mask aligner. Bost-hake is then carried out at a temperature of approximately 120°C for 20 minutes, and the metal layer 6 is plasma etched in carbon tetrachloride (CCρ4) scum for 2 minutes as shown in (e) to form the metal pattern 6'. and finally acetone (CH,C0CH) as shown in (f)
The resist film 7 is peeled off, and a comb-shaped electrode 5 made of metal B hair is obtained on the thin film waveguide 2].

このように本実施例では、パターンを作成する部分のみ
に金属層6を形成し1,11パタ一ン作成部分にはレジ
スト膜7を保護層として用いてエンチングを行なうこと
により、非パターン作成部分の薄膜導波路2の損傷を防
止することかできる。また、金属パターン6′のみでな
く、二酸化硅素’(Si02)等の非金属パターンを作
成する際にも有効である。
In this way, in this embodiment, the metal layer 6 is formed only in the part where the pattern is to be created, and the resist film 7 is used as a protective layer in the part where the 1, 11 patterns are to be created, and the etching is performed, so that the part where the pattern is not created is etched. Damage to the thin film waveguide 2 can be prevented. Moreover, it is effective not only when creating a metal pattern 6' but also when creating a non-metal pattern such as silicon dioxide' (Si02).

以上説明したように、本発明に係る光導波路に金属等の
パターンを形成する方法によれば、エツチング液が薄膜
導波路に接触することなく、薄膜導波路上に金属等のパ
ターンを形成できるので、薄膜導波路がエツチング液の
影響を受けてその性能を劣化することもなく、性能の良
い光スイツチング素子等を実現できる。また、薄膜導波
路上の金属層は、はぼパターン形成部分のみに設けるの
で薄膜素材の節約となる。
As explained above, according to the method for forming a metal pattern on an optical waveguide according to the present invention, a metal pattern can be formed on the thin film waveguide without the etching solution coming into contact with the thin film waveguide. Therefore, the performance of the thin film waveguide is not deteriorated due to the influence of the etching solution, and an optical switching device or the like with good performance can be realized. Further, since the metal layer on the thin film waveguide is provided only in the area where the pattern is formed, the amount of thin film material can be saved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は光導波路を用いた光スイツチング素子の斜視図
、第2図(a)〜(f)は従来の光導波路に金属等のパ
ターンを形成する方法の説明図、第3図(a)〜(f)
は本発明に係る光導波路に金属等のパターンを形成する
方法の説明図である。 符号1は基板、2は薄膜導波路、5は櫛型゛電極、6は
金属層、6′は金属パターン、7はレジスト膜、7′は
レジストパターンである。 特許出願人   キャノン株式会社 3fl (G)
Figure 1 is a perspective view of an optical switching element using an optical waveguide, Figures 2 (a) to (f) are explanatory diagrams of a conventional method for forming patterns of metal, etc. on an optical waveguide, and Figure 3 (a). ~(f)
FIG. 2 is an explanatory diagram of a method of forming a pattern of metal or the like on an optical waveguide according to the present invention. 1 is a substrate, 2 is a thin film waveguide, 5 is a comb-shaped electrode, 6 is a metal layer, 6' is a metal pattern, 7 is a resist film, and 7' is a resist pattern. Patent applicant Canon Co., Ltd. 3fl (G)

Claims (1)

【特許請求の範囲】 1、 薄膜導波路上に金属被膜等のパターンを形成する
場合において、薄膜導波路上の前記パターンを形成する
部分及びその近傍にパターンを形成する素材被膜を設け
る工程と、前記素材被膜と薄膜導波路上の全面にレジス
ト膜を被覆する工程と、前記素材被膜上のレジスト膜に
レジストパターンを形成する工程と、エツチング液によ
り前記素材被膜をエツチングする工程と、薄膜導波路上
に残留している前記レジスト膜を除去する二[程とから
成ることを特徴とする光導波路に金属等のパターンを形
成する方法。 2、 前記パターンを形成する素材被膜をアルミニウム
等の金属膜とする光導波路に金属等のパターンを形成す
る方法。 3、 前記パターンを形成する素材被膜を二酸化硅素の
被膜とする先導波路に金属等のパターンを形I成する方
法。
[Claims] 1. In the case of forming a pattern such as a metal coating on a thin film waveguide, a step of providing a material coating for forming a pattern on a portion of the thin film waveguide where the pattern is to be formed and in the vicinity thereof; a step of coating the entire surface of the material film and the thin film waveguide with a resist film; a step of forming a resist pattern on the resist film on the material film; a step of etching the material film with an etching solution; and a step of etching the material film with an etching solution. A method for forming a pattern of metal or the like on an optical waveguide, comprising the steps of removing the resist film remaining on the path. 2. A method of forming a pattern of metal or the like on an optical waveguide, in which the material film forming the pattern is a metal film of aluminum or the like. 3. A method of forming a pattern of metal or the like on a leading waveguide in which the material film forming the pattern is a film of silicon dioxide.
JP57093688A 1982-06-01 1982-06-01 Method for forming metallic pattern on light guide Pending JPS58211120A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57093688A JPS58211120A (en) 1982-06-01 1982-06-01 Method for forming metallic pattern on light guide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57093688A JPS58211120A (en) 1982-06-01 1982-06-01 Method for forming metallic pattern on light guide

Publications (1)

Publication Number Publication Date
JPS58211120A true JPS58211120A (en) 1983-12-08

Family

ID=14089337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57093688A Pending JPS58211120A (en) 1982-06-01 1982-06-01 Method for forming metallic pattern on light guide

Country Status (1)

Country Link
JP (1) JPS58211120A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110256484A1 (en) * 2010-04-14 2011-10-20 Tokyo Metropolitan University Method for producing comb-shaped electrode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110256484A1 (en) * 2010-04-14 2011-10-20 Tokyo Metropolitan University Method for producing comb-shaped electrode
US8389204B2 (en) * 2010-04-14 2013-03-05 Tokyo Ohka Kogyo Co., Ltd. Method for producing comb-shaped electrode

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