JPS58209171A - Manufacture of photovoltaic device - Google Patents
Manufacture of photovoltaic deviceInfo
- Publication number
- JPS58209171A JPS58209171A JP57092876A JP9287682A JPS58209171A JP S58209171 A JPS58209171 A JP S58209171A JP 57092876 A JP57092876 A JP 57092876A JP 9287682 A JP9287682 A JP 9287682A JP S58209171 A JPS58209171 A JP S58209171A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- transparent
- transparent conductive
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 3
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000001257 hydrogen Substances 0.000 claims abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- QQHSIRTYSFLSRM-UHFFFAOYSA-N alumanylidynechromium Chemical compound [Al].[Cr] QQHSIRTYSFLSRM-UHFFFAOYSA-N 0.000 abstract 1
- 238000004299 exfoliation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LOPFACFYGZXPRZ-UHFFFAOYSA-N [Si].[As] Chemical compound [Si].[As] LOPFACFYGZXPRZ-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は非晶質シリコン膜を用いた光起電力装置の製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a photovoltaic device using an amorphous silicon film.
太陽電池や光検出器のような半導体光起電力、装置は太
陽光線を直接エネルギーに変換することができるが、他
の電気エネルギー発生手段と比較して発電費用が多大で
ある。その主な原因は装置の主体を構成する半導体材料
の利用効率が低いこと、更には、斯る材料を製造するに
要するエネルギーが多いことにある。ところが最近上述
した欠点を一挙に解決する技術として、半導体材料に非
晶質シリコンを使用することが提案された。非晶質シリ
コンはシランやフロルシΦ）ンなどのシリコン化合物雰
囲気中でグロー放電によって安価かつ大量に形成するこ
とができ、その場合の非晶質シリコン（以下ＧＤ−ａｓ
ｉと略記する）では禁止帯の幅中の平均局在状態密度か
１０ｃ１ｎ 以下と小さく結晶シリコンと同じ様にＰ型
、Ｎ型の不純物制御が可能となるものである。Semiconductor photovoltaic devices, such as solar cells and photodetectors, can directly convert sunlight into energy, but their generation costs are high compared to other means of generating electrical energy. The main reason for this is the low utilization efficiency of semiconductor materials that constitute the main body of the device, and furthermore, the large amount of energy required to manufacture such materials. However, recently, the use of amorphous silicon as a semiconductor material has been proposed as a technique to solve the above-mentioned drawbacks all at once. Amorphous silicon can be formed inexpensively and in large quantities by glow discharge in an atmosphere of silicon compounds such as silane and florcin Φ).
(abbreviated as i), the average local state density within the width of the forbidden band is as small as 10c1n or less, making it possible to control P-type and N-type impurities in the same way as crystalline silicon.
第１図はＣＤ−ａＳｉを用いた従来の太陽電池を示す。FIG. 1 shows a conventional solar cell using CD-aSi.
１は可視光を透過するガラス等の透光性絶縁基板であり
、この基板上に透明導電膜２を介型層３□ 、Ｎ型層３
３の順に積層されている。Reference numeral 1 denotes a light-transmitting insulating substrate such as glass that transmits visible light, and a transparent conductive film 2 is formed on this substrate with an intermediate layer 3□ and an N-type layer 3.
They are stacked in the order of 3.
この太陽電池に２いては、基板ＩＩＩＩＩから光がＣＤ
−ａｓｉ膜３に入ると主に１層３２において電子正孔対
が発生して、これらはＰＩＮ接合電界にょシ引かれて移
動した後、透明導電膜２やオーミック電極４に集められ
、両電極に電圧が発生する。In this solar cell, the light from the substrate III is CD
-When entering the ASI film 3, electron-hole pairs are generated mainly in the first layer 32, and after being attracted by the PIN junction electric field and moving, they are collected on the transparent conductive film 2 and the ohmic electrode 4, and are collected on both the electrodes. A voltage is generated.
ところが、このような従来装置の場合、装置の性能の良
さを示す短絡電流の大幅な低減が余儀なくされた。即ち
第１図において、透明導電膜２の形成に次いでＣＤ−ａ
ｓｉ層３を形成する際、基板１の温度を約３２０℃にて
１．５ヤ２時間保持する必要がある。この時、既に形成
されている透明導電膜２と形成されつつあるＧＤ−ａｓ
ｉ層との間での相互拡散が生じ、この相互拡散が上記短
絡電流の大幅な低減を招いているのである。特に透明導
電膜２が酸化インジウム・錫（Ｉｎ２Ｏ３＋ＳｎＯ□）
で出来ている場合などは相互拡散は顕著となる。However, in the case of such conventional devices, it was necessary to significantly reduce the short circuit current, which indicates the good performance of the device. That is, in FIG. 1, after the formation of the transparent conductive film 2, the CD-a
When forming the Si layer 3, it is necessary to maintain the temperature of the substrate 1 at about 320° C. for 1.5 days and 2 hours. At this time, the transparent conductive film 2 that has already been formed and the GD-as that is being formed
Interdiffusion occurs with the i-layer, and this interdiffusion causes a significant reduction in the short circuit current. In particular, the transparent conductive film 2 is made of indium tin oxide (In2O3+SnO□)
Mutual diffusion becomes remarkable when the material is made of .
このような相互拡散による短絡電流の大幅な低減を防ぐ
方法として、例えば特開昭５５−１２１６８５号公報に
示されるように透明基板上に酸化インジウム−錫で透明
導電膜を形成し、その上に透明絶縁膜として酸化シリコ
ン（Ｓ＋Ｏ％ ５１０２ ）や窒（ヒ
素シリコン（ｓ；３Ｎ４） ’５（生成し、この酸化膜
や窒化膜によってＧＤ−ａｓｉ層の形成時に生じる相互
拡散を防止することが提案されている。しかしながらこ
の方法で作られた光起電力装置に於いても問題点を残し
ている。即ち、光起電力装置を構成しているＧＤ−ａｓ
ｉＯＰｉＮ層の膜厚は、それぞれＰ型層が２００Ｘ〜１
０００Ｘ１ノンド一プエ層が０．５〜Ｚ ｔｔｍ ＸＮ
型層３００Ｘ 〜１００ＯＸと極めて薄い。このため透
明導電膜上に形成される透明絶縁膜（Ｓ１０１ＳｉＯ２
，５１３Ｎ４等）がＧＤ−ａＳｉ形成時の熱処理によっ
てＧＤ−ａｓｉ界面に歪を与え、ＧＤ−ａＳｉ界面を損
傷する。特に５１３Ｎ４はＧＤ−ａｓｉとの熱膨張率の
差が大きく、界面でのひずみが増大しＧＤ−ａｓｉ界面
をいちじるしく損傷し、ＧＤ−ａＳｉが剥れるなどの現
象が起きた。ＳｉＯやＳｉＯ□は相互拡散防止膜として
は効果が不十分であって、透明導電膜中のＩｈとＳｎが
ＧＤ−ａＳｉ形成時の熱処理によって拡散しＧＤ−ａｓ
ｉに到達するため、所望する特性が得られないことが判
った。As a method for preventing a significant reduction in short-circuit current due to such interdiffusion, for example, as shown in JP-A-55-121685, a transparent conductive film is formed using indium-tin oxide on a transparent substrate, and a transparent conductive film is formed on the transparent substrate using indium tin oxide. It is proposed that silicon oxide (S+O% 5102) or nitride (arsenic silicon (S; 3N4) '5) be formed as a transparent insulating film, and that this oxide film or nitride film prevents the mutual diffusion that occurs during the formation of the GD-asi layer. However, there are still problems with photovoltaic devices made using this method.
The thickness of the iOPiN layer is 200X to 1 for each P-type layer.
000
The mold layer is extremely thin at 300X to 100OX. Therefore, a transparent insulating film (S101SiO2
. In particular, 513N4 had a large difference in coefficient of thermal expansion from GD-asi, and the strain at the interface increased, causing significant damage to the GD-asi interface, causing GD-aSi to peel off. SiO and SiO
It was found that the desired characteristics could not be obtained because the value of i was reached.
本発明は上記問題点を解決した、非晶質シリコンを用い
た光起電力装置の製造方法を提供することを目的とする
。An object of the present invention is to provide a method for manufacturing a photovoltaic device using amorphous silicon, which solves the above problems.
本発明は透光性絶縁基板上に透明導電膜、透明絶縁膜、
非晶質シリコン膜およびオーミック電極をこの順に積層
形成するに当って、上記透明絶縁膜としてシリコンオキ
シナイトライド膜を用いることを特徴とする。The present invention provides a transparent conductive film, a transparent insulating film,
In laminating the amorphous silicon film and the ohmic electrode in this order, a silicon oxynitride film is used as the transparent insulating film.
本発明によれば、透明導電膜と非晶質シリコン獲の相互
拡散が防止され、しかも相互拡散防止膜であるオキシナ
イトライド膜と非晶Ａシリコンの境界面で非晶質シリコ
ンの剥れを生じることもなく、信頼性の高い光起電力装
置が得られる。According to the present invention, mutual diffusion between the transparent conductive film and the amorphous silicon is prevented, and peeling of the amorphous silicon is prevented at the interface between the oxynitride film, which is a mutual diffusion prevention film, and the amorphous silicon A. A highly reliable photovoltaic device can be obtained.
以下に第２図を参照して本発明について実施例を説明す
る。第２図（ａ）に示すように、透光性ガラス基板１１
上に速比インジウム、錫（Ｉｎ ２０３十５ｎＯ２）か
らなる透明導電膜１２をスパッタ法によ多形成し、この
上に透明絶縁膜として数〜ｅ １０ Ｘの厚みでシリコ
ンオキシナイトライド（５ｉＸＯＹＮ２）膜１３を形成
する。シリコンオキシナイトライド膜１３は、雰囲気ガ
スとして窒素酸化物（ＮＯ１ＮＯ□、Ｎ２Ｏ５など）を
６〜０．１容１チ含む窒素または水素を用いたエトキシ
シランの分解によ多形成する。この膜厚は自由電子が十
分通過する厚みである。この後、第２図（ｂ）に示すよ
うに、三層のＧＤ−ａｓｉ膜１４を形成する。そＯＷＬ
さはＰＭ層１４１が１００Ｘ 〜１００ＯＸ、／ｙドー
ノエ層１４２が０．５〜２ μｍ 、 Ｎ型層１４３３
２０℃である。最後に例えばｋｔ−Ｃｒからなるオーミ
ック電極１５を形成する〇
この実施例全てよれば、ＧＤ−ａｓｉ膜１４の堰槓工程
でこれを透明導電膜１２との間の相互拡散が完全に防止
さ九、また応力によるＧＤ−ａｓｉＡ１４のはがれも生
じることなく、信頼性のよい光起電力装置が得られた。An embodiment of the present invention will be described below with reference to FIG. As shown in FIG. 2(a), a transparent glass substrate 11
A transparent conductive film 12 made of indium and tin (In203-5nO2) is formed thereon by a sputtering method, and silicon oxynitride (5iXOYN2) is formed on this as a transparent insulating film with a thickness of several to e10X. A film 13 is formed. The silicon oxynitride film 13 is formed by decomposing ethoxysilane using nitrogen or hydrogen containing 6 to 0.1 volumes and 1 liter of nitrogen oxides (NO1NO□, N2O5, etc.) as an atmospheric gas. This film thickness is sufficient for free electrons to pass through. Thereafter, as shown in FIG. 2(b), a three-layer GD-asi film 14 is formed. SOOWL
The PM layer 141 has a thickness of 100X to 100OX, the /y Dornoe layer 142 has a thickness of 0.5 to 2 μm, and the N-type layer 1433 has a thickness of 0.5 to 2 μm.
The temperature is 20°C. Finally, the ohmic electrode 15 made of, for example, kt-Cr is formed. According to all of these embodiments, the interdiffusion between the GD-asi film 14 and the transparent conductive film 12 is completely prevented in the step of weiring the GD-asi film 14. Moreover, a highly reliable photovoltaic device was obtained without peeling of GD-asiA14 due to stress.
なお上記実施例では、ＰＩＮ接合の例を説明したが、本
発明はシリコンオキシナイトライド膜を整流接合に用い
るＭＩＳ構造の光起電力装置を作る場合にも適用できる
。In the above embodiments, an example of a PIN junction has been described, but the present invention can also be applied to a case where a photovoltaic device having an MIS structure is made using a silicon oxynitride film for a rectifying junction.
第１図は従来例の光起電力装置の断面図、第２図（ａ）
、（ｂ）は不発明の一実施例の製造工程を説明するだめ
の断面図でるる。
１ノ・・・透光性ガ多ス基板、１２・・・透明導電膜、
１３・・・シリコンオキシナイトライド膜、１４・・・
ＧＤ−ａｓｉ層、１５・・・オーミック電極。
出願人代理人 弁理士 鈍 工 武 を第１図
第２図
３Figure 1 is a sectional view of a conventional photovoltaic device, Figure 2 (a)
, (b) are cross-sectional views for explaining the manufacturing process of one embodiment of the invention. 1. Translucent gas substrate, 12. Transparent conductive film,
13... Silicon oxynitride film, 14...
GD-asi layer, 15... ohmic electrode. Applicant's representative Patent attorney Takeshi Kun
Claims (2)
非晶質シリコン膜およびオーミ、り電極をこの順に積層
形成して光起電力装置を製造するに際し、前記透明絶縁
膜としてシリコンオキシナイトライド膜を用いることを
特徴とする光起電力装置の製造方法。(1) On a transparent insulating substrate, a transparent conductive film, a transparent insulating film,
A method for manufacturing a photovoltaic device, characterized in that a silicon oxynitride film is used as the transparent insulating film when manufacturing a photovoltaic device by laminating an amorphous silicon film and an ohmic electrode in this order. .
酸化物を０．１〜６容量チ含む窒素または水素を雰囲気
ガスとしてエトキシシランの分解により形成するもので
ある特許請求の範囲第１項記載の光起電力装置の製造方
法。(2) The light according to claim 1, wherein the silicon oxynitride M is formed by decomposing ethoxysilane using nitrogen or hydrogen containing 0.1 to 6 volumes of nitrogen oxide as an atmospheric gas. Method for manufacturing an electromotive force device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57092876A JPS58209171A (en) | 1982-05-31 | 1982-05-31 | Manufacture of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57092876A JPS58209171A (en) | 1982-05-31 | 1982-05-31 | Manufacture of photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58209171A true JPS58209171A (en) | 1983-12-06 |
Family
ID=14066642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57092876A Pending JPS58209171A (en) | 1982-05-31 | 1982-05-31 | Manufacture of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58209171A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2604563A1 (en) * | 1986-09-26 | 1988-04-01 | Sanyo Electric Co | PHOTOVOLTAIC DEVICE |
| KR20010078017A (en) * | 2000-01-19 | 2001-08-20 | 이즈하라 요조 | Glass article and glass substrate for display panel |
-
1982
- 1982-05-31 JP JP57092876A patent/JPS58209171A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2604563A1 (en) * | 1986-09-26 | 1988-04-01 | Sanyo Electric Co | PHOTOVOLTAIC DEVICE |
| KR20010078017A (en) * | 2000-01-19 | 2001-08-20 | 이즈하라 요조 | Glass article and glass substrate for display panel |
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