JPS58206030A - Inline type electrode structure - Google Patents

Inline type electrode structure

Info

Publication number
JPS58206030A
JPS58206030A JP8824082A JP8824082A JPS58206030A JP S58206030 A JPS58206030 A JP S58206030A JP 8824082 A JP8824082 A JP 8824082A JP 8824082 A JP8824082 A JP 8824082A JP S58206030 A JPS58206030 A JP S58206030A
Authority
JP
Japan
Prior art keywords
electron
apertures
electron beam
electrode structure
lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8824082A
Other languages
Japanese (ja)
Other versions
JPH021343B2 (en
Inventor
Kazuaki Naiki
内記 一晃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8824082A priority Critical patent/JPS58206030A/en
Publication of JPS58206030A publication Critical patent/JPS58206030A/en
Publication of JPH021343B2 publication Critical patent/JPH021343B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48Electron guns
    • H01J29/50Electron guns two or more guns in a single vacuum space, e.g. for plural-ray tube
    • H01J29/503Three or more guns, the axes of which lay in a common plane

Abstract

PURPOSE:To obtain an electron beam with little astigmatism, even when main electron lens apertures of an inline type electron gun are made to be large- sized and extremely close each other, by making the gap parts of neighboring apertures to sink in a depressed form on the aperture cut-through and blocked surface. CONSTITUTION:In an electrode structure 2, three electron beam transmitting apertures 21R, 21G and 21B lying on three electron gun axes 20R, 20G and 20B are cut through on the blocked surface 22 while salient fringes 24 projecting into the electrodes encircle the peripheries of the apertures. The gap parts 25 of the neighboring apertures 21R, 21G and 21B are projected into the electrodes while being sunken in a depressed form by the height (d) from the blocked surface 22. The difference of the curvatures of the electron lens electric fields on a level surface facing to a phosphor surface, whereon the electron beam transmitting apertures are to be arranged and on the vertical surface facing to the phosphor surface vertical thereto, is removed while an astigmatism becomes extreme small thus enabling to obtain a beam spot having the accorded vertical-and- horizontal diameters of the beam section and no astigmatism.

Description

【発明の詳細な説明】 本発明はインライン型カラー受像管用電子銃の主電子レ
ンズ構成電極の改善に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in the main electron lens constituent electrode of an in-line color picture tube electron gun.

電子銃の解像度は主として、パイ・ポテンシャル型、ユ
ニ・ポテンシャル型、その他の多段集束型からなる静電
電子レンズの球面収差に制約され、高解像度特性を得る
には主電子レンズを構成する電極直径を大きくして、電
子レンズの球面収差をを小さくする必要がある。主電子
レンズ電極直径はカラー受像管の硝子頚部内径に制限さ
れ、三電子銃が一列配列されたインライン型カラー受像
管では主電子レンズ電極直径は最大でも硝子頚部内径の
1/3以下となり電子銃構体設計上何カにこの最大径に
近づけるかが重要な点となっている。
The resolution of the electron gun is mainly limited by the spherical aberration of the electrostatic electron lens, which can be of pi-potential type, uni-potential type, or other multi-stage focusing type, and to obtain high resolution characteristics, the diameter of the electrode that makes up the main electron lens is limited. It is necessary to increase the spherical aberration of the electron lens by increasing the . The diameter of the main electron lens electrode is limited to the inner diameter of the glass neck of the color picture tube, and in an in-line color picture tube with three electron guns arranged in a row, the diameter of the main electron lens electrode is at most 1/3 or less of the inner diameter of the glass neck. An important point in designing the structure is how close to this maximum diameter can be approached.

上記要求に基づき出願人は特願昭56−199825゜
M57−0084 a 3で大口径靜it子レンズを構
成する電極形成法を提案している。
Based on the above requirements, the applicant has proposed a method of forming electrodes for constructing a large-diameter mirror lens in Japanese Patent Application No. 56-199825 M57-0084 A3.

第1図、第2図は前述の電極形成法によって得られたイ
ンライン型一体化構造電子銃の主電子レンズ電極構体の
一例を示す断面図と平面図である。
FIGS. 1 and 2 are a cross-sectional view and a plan view showing an example of a main electron lens electrode structure of an in-line integrated structure electron gun obtained by the above-described electrode forming method.

即ち、電極構体1は互に開孔間距離Sで隔てられた中央
及び両性側の三本の電子銃の軸10G。
That is, the electrode structure 1 has three electron gun shafts 10G at the center and on both sides separated by the distance S between the openings.

10R910B上に中央及び両性側電子ビーム透過開孔
11G、118.11Bが閉塞面12に穿設され、閉塞
面12に連続して筒側部13が形成された閉塞筒状体で
ある。上記電子ビーム開孔周囲は閉塞筒状体内部に突出
する突状縁14で囲まれ、各開孔部に形成される靜11
を子レンズの相互影響を防止すると共に閉塞面12を強
化していて、その高さhは可能の限り大きく形成されて
いる。
It is a closed cylindrical body in which central and bilateral electron beam transmission apertures 11G and 118.11B are bored in the closed surface 12 on 10R910B, and a cylinder side portion 13 is formed continuously to the closed surface 12. The periphery of the electron beam aperture is surrounded by a protruding edge 14 protruding into the closed cylindrical body, and a ridge 11 formed in each aperture
In order to prevent mutual influence of the child lenses, the occluding surface 12 is strengthened, and its height h is made as large as possible.

電子ビーム透過開孔11R,IIG、IIBの孔径りは
互に重ならず、且つ少くとも中央開孔が完全円孔で、隣
接開孔11a 、 11G及び11G。
The diameters of the electron beam transmission apertures 11R, IIG, and IIB do not overlap with each other, and at least the central aperture is a completely circular hole, and the adjacent apertures 11a, 11G, and 11G.

11Bの間隙部15がほぼ電極構体1の形成材板厚程度
まで狭めることによって大口径化されている。第3図は
この電極構体1と同一構造をした電極構体1′とを同一
軸上10R,10G、IOBに対向配置し、電極構体1
に高電圧、1!極構体1′に低電圧を印加した場合、三
本の電子銃の軸10R110G、10Bを含む断面内(
通常は陰極線管蛍光面に対し水平面)に於ける主電子レ
ンズを形成する静電界を示し、主電子レンズの等電位面
とこの断面との交線である等電位線を線群16,16’
で示す。第4図は前記断面に垂直で中央の電子銃の軸を
含む断面内(通常は蛍光面に対して垂直面)の主電子レ
ンズ静電界を示し、主電子レンズの等電位面とこの断面
との交線である等電位線を線群17.17’で示す。
The gap 15 of the electrode structure 1 is narrowed to approximately the thickness of the material forming the electrode structure 1, thereby increasing the diameter. In FIG. 3, this electrode structure 1 and an electrode structure 1' having the same structure are arranged facing each other on the same axis at 10R, 10G, and IOB, and the electrode structure 1
High voltage, 1! When a low voltage is applied to the pole structure 1', within the cross section including the axes 10R, 110G, and 10B of the three electron guns (
It shows the electrostatic field that forms the main electron lens in a plane (usually horizontal to the fluorescent screen of the cathode ray tube), and the equipotential lines that are the intersections of the equipotential surface of the main electron lens and this cross section are line groups 16 and 16'.
Indicated by Figure 4 shows the electrostatic field of the main electron lens in a cross section that is perpendicular to the above cross section and includes the axis of the central electron gun (usually a plane perpendicular to the phosphor screen), and shows the equipotential surface of the main electron lens and this cross section. Equipotential lines, which are the intersection lines of , are shown by line group 17.17'.

第3図に示す断面内では図から明らかなように、電極構
体1,1′の対向部側では各電子ビーム透過開孔には夫
々独立した静電電子レンズが形成されている。然るに、
本構成電極構体では構造上の制約から突状縁14の高さ
hは通常開孔直径りの1/2以下となり、電極構体1,
1′の内部では静電電子レンズを構成する吟電位線群1
6 、 l 6’は各開孔部を経由しないで共通の等電
位線となっていて、中央開孔11’G 、 11G’の
電子レンズ電界の曲率は両列側開孔11R,IIR’、
IIB、IIB’のそれより小さくなっている。従って
中央開孔11G、11G′に形成される静電電子レンズ
は両列側開孔11R,IIR’、IIB、IIB’に形
成される静電電子レンズより弱く、この断面内(水平面
)での電子ビームは中央電子ビーム径が、両列側電子ビ
ーム径より大きくなる。更に第4図に示す断面内では(
図では中央開孔部1iF)、11()’面のみ示す)中
央及び両列側開孔部に形成される等電位線群17,17
′は夫々独立した静電電子レンズを構成し、且つ電子銃
の軸に対称で、各電子レンズは大略同一電子レンズ強度
を持っている。
In the cross section shown in FIG. 3, as is clear from the figure, independent electrostatic electron lenses are formed in each electron beam transmission aperture on the opposite side of the electrode structures 1 and 1'. However,
In this electrode structure, the height h of the protruding edge 14 is usually 1/2 or less of the aperture diameter due to structural constraints, and the electrode structure 1,
1', the potential line group 1 that constitutes the electrostatic electron lens
6, l6' are common equipotential lines without going through each aperture, and the curvature of the electron lens electric field of the central apertures 11'G, 11G' is the same as that of the apertures 11R, IIR',
It is smaller than that of IIB and IIB'. Therefore, the electrostatic electron lenses formed in the central openings 11G and 11G' are weaker than the electrostatic electron lenses formed in the openings 11R, IIR', IIB, and IIB' on both row sides, and the The center electron beam diameter of the electron beam is larger than the electron beam diameters on both row sides. Furthermore, within the cross section shown in Figure 4, (
In the figure, the equipotential line groups 17, 17 formed in the center and both row side openings (only the central opening 1iF) and 11()' planes are shown)
' constitute independent electrostatic electron lenses, and are symmetrical about the axis of the electron gun, and each electron lens has approximately the same electron lens strength.

然るに第3図と第4図との靜11子レンズと比較すると
、第3図の蛍光面に対する水平面内の等電位線群16.
16’の電!!構体内部の曲率は第4図の蛍光面に対す
る垂直面内の等電位線群17゜17′の電極検体内部の
曲率より小さく、従って第3図の水平面内より第4図の
垂直面内の電子レンズは強く、垂直面内では各電子ビー
ムは水平面内より強く集束され、電子ビーム径は第3図
の水平面より小さくなり、従ってこの電子レンズは水平
However, when compared with the 11 lens shown in FIGS. 3 and 4, the equipotential line group 16 in the horizontal plane relative to the phosphor screen in FIG.
16' electricity! ! The curvature inside the structure is smaller than the curvature inside the electrode specimen of the group of equipotential lines 17°17' in the plane perpendicular to the phosphor screen in FIG. The lens is strong, in the vertical plane each electron beam is more strongly focused than in the horizontal plane, and the electron beam diameter is smaller than in the horizontal plane in Figure 3, so this electron lens is horizontal.

垂直面での等電位線の曲率の差により非点収差が大きい
Astigmatism is large due to the difference in curvature of equipotential lines in the vertical plane.

以上の様な静電電子レンズにより各電子ビーム開孔部通
過電子ビームは三つの開孔配列方向(水平軸上)に横長
な電子ビーム断面となって、更に中央電子ビームは面外
側電子ビームより横長となり、蛍光面水平方向と垂直方
向の解像度が相違し、加えて中央電子ヒームの解像度は
面外側電子ビームの解像度より悪くなる。この様に陰極
線管蛍光面上には収差の大きな電子ビーム断面が得られ
、このため高輝度画像となる陰極放出電流が大きくて、
電子ビーム開孔部での電子ビーム束の占有率が大きくな
ると%に顕著になり、解像度を劣化させる欠点が認めら
れる。
Due to the electrostatic electron lens described above, each electron beam passing through the aperture becomes a horizontally elongated electron beam cross section in the direction of the three apertures (on the horizontal axis), and the central electron beam is larger than the out-of-plane electron beam. The phosphor screen is elongated horizontally, and the resolution in the horizontal and vertical directions of the phosphor screen is different.In addition, the resolution of the central electron beam is worse than that of the out-of-plane electron beam. In this way, an electron beam cross section with large aberrations is obtained on the fluorescent screen of the cathode ray tube, and therefore the cathode emission current resulting in a high brightness image is large.
As the occupation rate of the electron beam flux in the electron beam aperture increases, the disadvantage becomes noticeable and the resolution deteriorates.

本発明は上述の欠点を改善するためになされたもので、
インライン型電子銃の主電子レンズ開孔が大口径化され
、互に極めて接近しても、開孔配列方向とこれに垂直な
方向で電子レンズ曲率を実質的に等しくシ、非点収差の
小さい電子ビームが得られる電子銃電極構体を提供する
ことを目的とする。
The present invention has been made to improve the above-mentioned drawbacks.
The main electron lens aperture of an in-line electron gun has a large diameter, and even if they are very close to each other, the electron lens curvature is substantially equal in the aperture arrangement direction and in the direction perpendicular to this, resulting in small astigmatism. An object of the present invention is to provide an electron gun electrode structure that can obtain an electron beam.

以下図面に従って本発明の詳細な説明する。The present invention will be described in detail below with reference to the drawings.

第5図は本発明の一実施例によるインライン型一体化構
造電子銃の主電子レンズ電極構体2の斜視図であり、第
6図はこの電極構体2と同一構造をした電極構体2′と
を同一軸上20R,20G 。
FIG. 5 is a perspective view of the main electron lens electrode structure 2 of an in-line integrated structure electron gun according to an embodiment of the present invention, and FIG. 6 shows an electrode structure 2' having the same structure as this electrode structure 2. 20R, 20G on the same axis.

20B上に対向配置し、電極構体2に高電圧、電極構体
2′に低電圧を印加した場合、三本の電子銃(D軸20
 a 、 20G 、 20 Bt−含tr断面内に於
ケる主電子レンズを形成する静電界を示し、主電子レン
ズの等電位面とこの断面との交線である等電位吻を線群
26.26’で示す。
20B, and when a high voltage is applied to the electrode structure 2 and a low voltage is applied to the electrode structure 2', three electron guns
a, 20G, 20 Bt - shows the electrostatic field forming the main electron lens within the tr-containing cross section, and the equipotential nose, which is the intersection line between the equipotential surface of the main electron lens and this cross section, is represented by line group 26. Indicated by 26'.

電極構体2は従来の電極構体1と同様に、開孔間距離S
を持った三本の電子銃のII’!’20R,20G。
Similar to the conventional electrode structure 1, the electrode structure 2 has a distance S between the openings.
II' with three electron guns! '20R, 20G.

20B上にある三つの電子ビーム透過開孔21 R。Three electron beam transmission apertures 21R on 20B.

210.21Bが閉塞面22に穿設され、閉塞面22に
連続して筒側部23が形成された閉塞筒状体であり、開
孔径りは互に重ならず、且つ少くとも中央開孔が完全円
孔で、隣接開孔21f’L、21G及び21G、21B
の間隙部25がほぼ電極構体2の形成材板厚程度まで狭
めることによって大口径化され、開孔周囲は電極内部(
突出する突状縁24で囲まれている。然るに隣接開孔2
1R,21G及び21G、21Bの間隙部25は電極内
部に突出し、閉塞面22より高さdだけ凹状にくぼんで
いる。
210.21B is a closed cylindrical body in which a hole is bored in the closed surface 22 and a cylinder side portion 23 is formed continuously to the closed surface 22, and the diameters of the openings do not overlap with each other, and at least the center opening is a completely circular hole, and adjacent openings 21f'L, 21G and 21G, 21B
The diameter of the gap 25 is increased by narrowing it to approximately the thickness of the material forming the electrode assembly 2, and the area around the opening is inside the electrode (
It is surrounded by a protruding protruding edge 24. However, adjacent hole 2
The gap portions 25 of 1R, 21G, 21G, and 21B protrude inside the electrode and are recessed by a height d from the closed surface 22.

第6図から明らかなように、間隙部25が閉隙翔・25
が閉塞面22に対し凹状にく、ぼんでいるため三本の電
子銃軸20R,20G 、20Bを含む断面内(蛍光面
に対する水平面)では、主電子レンズ形成静電界となる
等電位線群26.26’は各開孔部を経由しない共通の
等電位線の発生は最小限に抑えられ、各開孔部ごとに独
立した、はぼ等しい静電電子レンズを形成している。従
って水平面内での各電子レンズの強さはほぼ等しくなり
、中央及び両列側開孔の電子ビーム径は等しくなる。
As is clear from FIG. 6, the gap 25 is closed.
is not concave and convex with respect to the closed surface 22, so in the cross section including the three electron gun axes 20R, 20G, and 20B (horizontal plane relative to the phosphor screen), the equipotential line group 26 becomes the main electron lens forming electrostatic field. In .26', the generation of common equipotential lines that do not pass through each aperture is minimized, and an independent and almost equal electrostatic electron lens is formed for each aperture. Therefore, the strength of each electron lens in the horizontal plane is approximately equal, and the electron beam diameters of the center and both row side apertures are equal.

更に第6図に示す面内の三つの電子し/ンズと、三本の
電子解の軸20R,20G 、20Bを含む面に垂直な
断面(垂直面)内の静電電子l/ンズの等電位線を示す
面と等価な第4図と比較すると、等電線群26.26’
の曲率は第3図に於ける等電位線群16.16’の場合
より、第4図に示す垂直面内の等電位線群17.17’
の曲率によく近似し、電子ビーム透過開孔が配列される
蛍光面に肛する水平面、及びこれに垂直な蛍光面に対す
る垂直面での電子レンズ電界の曲率の差がなくなり、非
点収差は極めて小さくなり、蛍光面上にはビーム断面の
縦、横径が一致した収差のないビームスポットが得らn
る。
Furthermore, the three electron lenses in the plane shown in Fig. 6, and the electrostatic electron lenses in the cross section (vertical plane) perpendicular to the plane containing the three electron solution axes 20R, 20G, and 20B. When compared with Figure 4, which is equivalent to the plane showing the potential lines, the isoelectric line group 26.26'
The curvature of the equipotential line group 17.17' in the vertical plane shown in FIG. 4 is greater than that of the equipotential line group 16.16' in FIG.
The curvature of the electron lens electric field closely approximates the curvature of As a result, an aberration-free beam spot with the same vertical and horizontal beam cross-section diameters can be obtained on the phosphor screen.
Ru.

上述の様に本発明の実施例によれば電子ビーム透過孔の
大口径化により、主電子レンズの球面収差を減少させ、
且つ非点収差を軽減出来るため、陰極線管蛍光面に対す
る水平、垂直面内の電子ビーム径の縦、横径を一致させ
、蛍光面水平、垂直方向の解像度を一致させ、中央電子
ビームと内外側電子ビームの解像度の差を除去出来るた
め各電子ビームによる解像度は一様に改善される。更に
電子レンズの大口径化による球面収差低減を非点収差を
軽減させることで実現出来るため高輝度画像となる陰極
放出電流が大きくて、電子ビーム透過開孔部での電子ビ
ーム束の電子レンズに対する占有率が大きくなっても解
像度°を劣化させることはなくなる。
As described above, according to the embodiment of the present invention, the spherical aberration of the main electron lens is reduced by increasing the diameter of the electron beam transmission aperture.
In addition, since astigmatism can be reduced, the vertical and horizontal diameters of the electron beam in the horizontal and vertical planes with respect to the cathode ray tube phosphor screen are made to match, the resolution in the horizontal and vertical directions of the phosphor screen is made to be the same, and the center electron beam and the inner and outer sides are matched. Since the difference in the resolution of the electron beams can be removed, the resolution of each electron beam is uniformly improved. Furthermore, since the reduction of spherical aberration by increasing the diameter of the electron lens can be achieved by reducing astigmatism, the cathode emission current resulting in a high-brightness image is large, and the electron beam flux at the electron beam transmission aperture is reduced relative to the electron lens. Even if the occupation rate increases, the resolution will not deteriorate.

上記実施例では電極構体閉塞面よりの間隙部の凹状くぼ
みを突状縁内部まで同時にくぼませたか、単に三つの電
子ビーム透過開孔隣接間隙部のみ凹状にくぼませて、突
状縁の電極内部高さを間隙部以外の高さと同一に保った
ままでも上述したと同様の効果が得られることは云うま
でもない。
In the above embodiment, the concave recess in the gap from the closed surface of the electrode structure was simultaneously recessed to the inside of the protruding edge, or only the gap adjacent to the three electron beam transmission apertures was concavely recessed, and the inside of the electrode at the protruding edge was recessed. It goes without saying that the same effect as described above can be obtained even if the height is kept the same as the height of the parts other than the gap.

【図面の簡単な説明】[Brief explanation of the drawing]

部を狭ることによって大口径化されたインライン型一体
化構造電子銃の主電子レンズ電極構体の断面図と平面図
を、第3図、第4図は前記一対の電極を互に対向させ夫
々高電圧と低電圧を印加した場合、三本の電子銃の軸を
含む断面、及びこの断面に垂直で中央の電子銃の軸を含
む断面内での主電子レンズ静電界を、第5図は本発明の
一実施例を示すインライン型一体化構造電子銃の主電子
レンズ電極構体の斜視図を、第6図は前記一対の電極を
互に対向させ夫々高電圧と低電圧を印加した場合1、三
本の電子銃の軸を含む断面内での主電子レンズ静電界を
夫々示す。 10R,10G、IOB:20几、20G、20B・・
・・・・電子銃の軸、IIR,IIG、IIB:21F
L、21G、21B・・・・・・電子ビーム透過開孔、
12゜22・・・・・・閉塞面、13.23・・・パ筒
側部、14゜24・・・・・・突状縁、15.25・・
・・・・間隙部、16゜16’ 、 17 、17’ 
、 26 、26’・・・・・−等電位線群。 単S 図 210 阜6 閉
Figures 3 and 4 show a cross-sectional view and a plan view of the main electron lens electrode structure of an in-line integrated structure electron gun whose diameter has been increased by narrowing the portion, and Figures 3 and 4 show the pair of electrodes facing each other, respectively. Figure 5 shows the main electron lens electrostatic field in a cross section that includes the axes of the three electron guns and a cross section that is perpendicular to this cross section and includes the axis of the central electron gun when high and low voltages are applied. FIG. 6 is a perspective view of the main electron lens electrode structure of an in-line integrated structure electron gun showing an embodiment of the present invention. , respectively, show the main electron lens electrostatic field within the cross section including the axes of the three electron guns. 10R, 10G, IOB: 20L, 20G, 20B...
...Electron gun axis, IIR, IIG, IIB: 21F
L, 21G, 21B... Electron beam transmission aperture,
12゜22...Closing surface, 13.23...Pipe cylinder side, 14゜24...Protruding edge, 15.25...
...Gap, 16°16', 17, 17'
, 26, 26'...-Equipotential line group. Single S Figure 210 阜6 Close

Claims (1)

【特許請求の範囲】[Claims] 突状縁で囲まれて独立した三つの開孔がインライン配列
された閉基筒状体電極構体において、前記突状縁を含ん
だ二つの隣接開孔間隙部を開孔穿設閉基面より凹状に窪
ぼませたことを特徴とするインライン型電極構体。
In a closed-base cylindrical electrode structure in which three independent apertures surrounded by a protruding edge are arranged in-line, the gap between two adjacent apertures including the protruding edge is drilled from the closed base surface. An in-line electrode structure characterized by a concave depression.
JP8824082A 1982-05-25 1982-05-25 Inline type electrode structure Granted JPS58206030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8824082A JPS58206030A (en) 1982-05-25 1982-05-25 Inline type electrode structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8824082A JPS58206030A (en) 1982-05-25 1982-05-25 Inline type electrode structure

Publications (2)

Publication Number Publication Date
JPS58206030A true JPS58206030A (en) 1983-12-01
JPH021343B2 JPH021343B2 (en) 1990-01-11

Family

ID=13937330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8824082A Granted JPS58206030A (en) 1982-05-25 1982-05-25 Inline type electrode structure

Country Status (1)

Country Link
JP (1) JPS58206030A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0739028A2 (en) * 1989-08-11 1996-10-23 Zenith Electronics Corporation Method and apparatus for controlling dynamic convergence of a plurality of electron beams of a color cathode ray tube

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5449862U (en) * 1977-09-14 1979-04-06
JPS57103246A (en) * 1980-10-29 1982-06-26 Rca Corp Color picture tube

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5449862U (en) * 1977-09-14 1979-04-06
JPS57103246A (en) * 1980-10-29 1982-06-26 Rca Corp Color picture tube

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0739028A2 (en) * 1989-08-11 1996-10-23 Zenith Electronics Corporation Method and apparatus for controlling dynamic convergence of a plurality of electron beams of a color cathode ray tube
EP0739028A3 (en) * 1989-08-11 1996-11-20 Zenith Electronics Corporation Method and apparatus for controlling dynamic convergence of a plurality of electron beams of a color cathode ray tube

Also Published As

Publication number Publication date
JPH021343B2 (en) 1990-01-11

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