JPH0360143B2 - - Google Patents

Info

Publication number
JPH0360143B2
JPH0360143B2 JP17744583A JP17744583A JPH0360143B2 JP H0360143 B2 JPH0360143 B2 JP H0360143B2 JP 17744583 A JP17744583 A JP 17744583A JP 17744583 A JP17744583 A JP 17744583A JP H0360143 B2 JPH0360143 B2 JP H0360143B2
Authority
JP
Japan
Prior art keywords
electron
electrode
lens
gap
electron lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17744583A
Other languages
Japanese (ja)
Other versions
JPS6070645A (en
Inventor
Kazuaki Naiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP17744583A priority Critical patent/JPS6070645A/en
Publication of JPS6070645A publication Critical patent/JPS6070645A/en
Publication of JPH0360143B2 publication Critical patent/JPH0360143B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48Electron guns
    • H01J29/50Electron guns two or more guns in a single vacuum space, e.g. for plural-ray tube
    • H01J29/503Three or more guns, the axes of which lay in a common plane

Description

【発明の詳細な説明】 本発明は、インライン型カラー受像管用電子銃
の主電子レンズ構成電極の改善に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in the main electron lens constituent electrode of an in-line color picture tube electron gun.

電子銃の解像度は主として、バイ・ポテンシヤ
ル・フオーカス型、ユニ・ポテンシヤル・フオー
カス型、その他の多段集束型からなる静電電子レ
ンズの球面収差に制約され、高解像度特性を得る
には主電子レンズを構成する電極孔径を大きくし
て、電子レンズの球面収差を小さくする必要があ
る。主電子レンズ電極孔径はカラー受像管の硝子
頚部内径に制限され、三電子銃が一列配列された
インライン型カラー受像管では主電子レンズ直径
は最大でも硝子頚部内径の1/3以下となり、電子
銃構体設計上何如にこの最大径に近づけるかが重
要な点となつている。
The resolution of the electron gun is mainly limited by the spherical aberration of the electrostatic electron lens, which can be of the bi-potential focus type, uni-potential focus type, or other multi-stage focusing type.To obtain high resolution characteristics, the main electron lens must be used. It is necessary to increase the diameter of the electrode holes to reduce the spherical aberration of the electron lens. The diameter of the main electron lens electrode is limited to the inner diameter of the glass neck of the color picture tube, and in an in-line color picture tube with three electron guns arranged in a row, the diameter of the main electron lens is at most 1/3 or less of the inner diameter of the glass neck, and the electron gun An important point in designing the structure is how to approach this maximum diameter.

従来一般に用いられている閉塞面にインライン
配列されて夫々独立した突状縁で囲まれた開孔を
備えた閉塞筒状体電極では、主として電極形成上
の制約から三つの開孔相互間距離Sと、開孔径D
はD/S0.85とし、隣接開孔間隙Rは1.1〜0.85
mmに選定されている。これに対し上記要求に基づ
き隣接開孔間隙Rを電極形成母材板厚程度迄縮め
て0.89D/S<0.98と大口径化する電極形成法
が提案されている。
In conventionally commonly used closed cylindrical electrodes having apertures arranged in-line on a closed surface and surrounded by independent protruding edges, the distance S between the three apertures is limited mainly due to constraints on electrode formation. and the opening diameter D
is D/S 0.85, and adjacent opening gap R is 1.1 to 0.85.
mm. On the other hand, based on the above requirements, an electrode forming method has been proposed in which the adjacent opening gap R is reduced to about the thickness of the electrode forming base material plate and the diameter is increased to 0.89D/S<0.98.

第1図、第2図は前述の電極形成法によつて得
られたインライン型電子銃の主電子レンズ電極構
体の一例を示す断面図と平面図である。電極構体
1は互に開孔相互間距離Sで隔てられた中央及び
両外側の三本の電子銃軸10G,10R,10B
上に中央及び両外側電子ビーム透過開孔11G,
11R,11Bが閉塞面12に穿設され、開塞面
12に連続して筒側部13が形成された閉塞筒状
体である。上記電子ビーム開孔周囲は閉塞筒状体
内部に突出する突状縁14で囲まれ、各開孔部に
形成される静電電子レンズの相互影響を防止する
と共に閉塞面12を強化していて、その高さhは
可能の限り大きく形成されている。電子ビーム透
過開孔11G,11R,11Bの孔径Dは互に重
ならず、且つ少なくとも中央開孔が完全円孔で、
隣接開孔11R,11G及び11G,11Bの間
隙部15の幅Rをほぼ電極構体1の形成材板厚程
度迄狭めることによつて0.89D/S<0.98と大
口径化されている。第3図はこの電極構体1と同
一構造をした電極構体1′とを同一軸上10R,
10G,10Bに対向配置し、電極構体1に高電
圧、電極構体1′に高電圧の所定割合を持つ低電
圧を印加した場合、三本の電子銃軸10R,10
G,10Bを含む断面内し通常は陰極線管螢光面
に対し水平面)に於ける主電子レンズを形成する
静電界を示し、主電子レンズの等電位面とこの断
面との光線である等電位線を線群16,16′で
示す。第4図は前記断面に垂直で中央の電子銃軸
を含む断面内(通常は螢光面に対して垂直面)の
主電子レンズ静電界を示し、主電子レンズの等電
位面とこの断面との交線である等電位線を線群1
7,17′で示す。
FIGS. 1 and 2 are a cross-sectional view and a plan view showing an example of a main electron lens electrode structure of an in-line electron gun obtained by the above-described electrode forming method. The electrode structure 1 has three electron gun shafts 10G, 10R, and 10B at the center and on both outer sides separated by a distance S between the openings.
Center and both outer electron beam transmission apertures 11G on top,
11R and 11B are a closed cylindrical body in which a closed surface 12 is bored and a cylinder side portion 13 is formed continuously to the open surface 12. The periphery of the electron beam aperture is surrounded by a protruding edge 14 that protrudes into the inside of the closed cylindrical body, which prevents mutual influence of the electrostatic electron lenses formed in each of the apertures and strengthens the closed surface 12. , the height h thereof is made as large as possible. The diameters D of the electron beam transmission apertures 11G, 11R, and 11B do not overlap with each other, and at least the central aperture is a completely circular hole,
By narrowing the width R of the gap 15 between the adjacent openings 11R, 11G and 11G, 11B to approximately the thickness of the material forming the electrode structure 1, the diameter is increased to 0.89D/S<0.98. FIG. 3 shows this electrode assembly 1 and an electrode assembly 1' having the same structure on the same axis at 10R.
10G and 10B, and when a high voltage is applied to the electrode assembly 1 and a low voltage with a predetermined proportion of the high voltage is applied to the electrode assembly 1',
Indicates the electrostatic field that forms the main electron lens in the cross section including G, 10B (usually a plane horizontal to the fluorescent surface of the cathode ray tube), and the equipotential that is the ray between the equipotential surface of the main electron lens and this cross section. The lines are indicated by line groups 16, 16'. Figure 4 shows the electrostatic field of the main electron lens in a cross section that is perpendicular to the above cross section and includes the central electron gun axis (usually a plane perpendicular to the fluorescent surface), and shows the equipotential surface of the main electron lens and this cross section. Line group 1 is the equipotential line that is the intersection line of
7,17'.

本構成電極構体では構造上の制約から突状縁1
4の高さhは開孔直径Dの1/2以下となるため、
第3図に示す断面内に於て、電極構体1,1′の
対抗部側では静電電子レンズを構成する等電位線
群16,16′は各開口間隙15,15′を経由し
て各開孔には夫々独立した電子レンズを形成する
が、電極内部では等電位線群16,16′は各開
孔部を経由しないで共通の等電位線となり、中央
開孔11G,11Gの電子レンズ電界曲率は両外
側開孔11R,11R′;11B,11B′のそれ
より小さくなつている。更に開孔間隙15,1
5′の幅Rを電極形成母材板厚程度迄小くし開孔
を大口径化しているため、電極構体1,1′の間
隙15,15′の対向部間の方が筒側部13,1
3′対向部間より等電位線群16,16′の密度が
粗となつている。従がつて中央開孔部に形成され
る静電電子レンズは両外側開孔部の電子レンズよ
り弱く、この断面(水平面)内では中央電子ビー
ム径の方が両外側電子レンズ径より大きくなる。
In this electrode structure, due to structural constraints, the protruding edge 1
Since the height h of 4 is less than 1/2 of the opening diameter D,
In the cross section shown in FIG. 3, on the opposite side of the electrode structures 1, 1', equipotential lines 16, 16' constituting the electrostatic electron lens pass through each aperture gap 15, 15'. An independent electron lens is formed in each aperture, but inside the electrode, the equipotential line groups 16 and 16' become a common equipotential line without passing through each aperture, and the electron lenses of the central apertures 11G and 11G The electric field curvature is smaller than that of both outer openings 11R, 11R'; 11B, 11B'. Furthermore, the opening gap 15,1
Since the width R of 5' is reduced to about the thickness of the electrode forming base material plate and the opening is made large, the gap between the electrode structures 1, 1' and the opposing parts of the gap 15, 15' is closer to the cylinder side part 13, 1
The density of the equipotential line groups 16, 16' is lower than that between the opposing parts 3'. Therefore, the electrostatic electron lens formed in the central aperture is weaker than the electron lenses in both outer apertures, and within this cross section (horizontal plane), the central electron beam diameter is larger than the diameter of both outer electron lenses.

一方第4図に示す断面内では(中央開孔11
G,11G′を含む面のみ示す)中央及び両外側
開孔部に形成される等電位線群17,17′は
夫々独立した静電電子レンズを形成し、各電子銃
軸に対称で、同一のレンズ強度を持つているが、
その等電位線群17,17′の曲率は前記第3図
の螢光面に対する水平面内の等電位線群16,1
6′の曲率より大きく、第3図の水平面内より第
4図の垂直面内の電子レンズの強さは大きくなつ
ている。
On the other hand, in the cross section shown in FIG.
The equipotential line groups 17 and 17' formed in the central and both outer openings (only the plane containing G and 11G' are shown) form independent electrostatic electron lenses, and are symmetrical about each electron gun axis and are identical. It has a lens strength of
The curvature of the equipotential line group 17, 17' is the equipotential line group 16, 1 in the horizontal plane with respect to the fluorescent surface in FIG.
6', and the strength of the electron lens in the vertical plane in FIG. 4 is greater than in the horizontal plane in FIG. 3.

上記の電子レンズでは螢光面の水平、垂直面内
のレンズ強さに差があるばかりでなく、水平面内
では中央電子レンズの方が両外側電子レンズの強
さより弱くなり、螢光面上には水平方向に横長
で、中央ビームの方が両外側ビームより大きく、
中央ビームの解像度が両外側ビームより悪くな
り、陰極放出電流の大きい高輝度面像ではこれが
特に顕著となる欠点があつた。
In the above electron lens, not only is there a difference in lens strength in the horizontal and vertical planes of the fluorescent surface, but in the horizontal plane, the strength of the central electron lens is weaker than that of both outer electron lenses, and is horizontally elongated, the central beam is larger than both outer beams,
The resolution of the central beam was worse than that of the outer beams, and this was particularly noticeable in high-brightness area images with large cathode emission currents.

本発明は上述の欠点を改善するためになされた
もので、インライン型電子銃の主電子レンズ開孔
が大口径化され、互に極めて接近しても開孔配列
方向とこれに垂直な方向で電子レンズ曲率を実質
的に等しくし、非点収差の小さい電子レンズが得
られる電子銃電極構体を提供することを目的とす
る。
The present invention was made in order to improve the above-mentioned drawbacks, and the main electron lens apertures of the in-line electron gun are made large in diameter, so that even if they are very close to each other, the apertures are arranged in the aperture direction and the direction perpendicular to this. It is an object of the present invention to provide an electron gun electrode structure that allows electron lens curvatures to be made substantially equal and an electron lens with small astigmatism to be obtained.

以下図面に従がつて本発明の実施例を説明す
る。
Embodiments of the present invention will be described below with reference to the drawings.

第5図は本発明の一実施例によるインライン型
一体化構造電子銃の主電子レンズ電極構体2の斜
視図であり、第6図はこの電極構体2と同一構造
の電極構体2′とを同一軸上20R,20G,2
0B上に対向配置し、電極構体2に高電圧、電極
構体2′に高電圧の所定割合にある低電圧を印加
した場合、三本の電子銃軸20R,20G,20
Bを含む断面内に於ける主電子レンズを形成する
静電界を示し、主電子レンズの等電位面とこの断
面との交線である等電位線を線群26,26′で
示す。第7図は前記断面に垂直で中央の電子銃軸
を含む断面に於ける主電子レンズを形成する静電
界を示し、主電子レンズの等電位面とこの断面と
の交線である等電位線を線群27,27′で示す。
FIG. 5 is a perspective view of the main electron lens electrode structure 2 of an in-line integrated structure electron gun according to an embodiment of the present invention, and FIG. 6 shows the electrode structure 2 and an electrode structure 2' having the same structure. On shaft 20R, 20G, 2
When the three electron gun shafts 20R, 20G, 20 are placed facing each other on the 0B and a high voltage is applied to the electrode structure 2 and a low voltage at a predetermined ratio of the high voltage is applied to the electrode structure 2',
The electrostatic field forming the main electron lens in the cross section including B is shown, and the equipotential lines that are the intersections of the equipotential surface of the main electron lens and this cross section are shown by line groups 26 and 26'. Figure 7 shows the electrostatic field forming the main electron lens in a cross section that is perpendicular to the cross section and includes the central electron gun axis, and shows equipotential lines that are intersection lines of the equipotential surface of the main electron lens and this cross section. are shown by line groups 27 and 27'.

電極構体2は従来の電極構体と同様に、互に等
しい開孔間距離Sを持つた三本の電子銃軸20
R,20G,20B上にある三つの電子ビーム透
過開孔21R,21G,21Bが閉塞面22に穿
設され、閉塞面22に連続して筒側部23が形成
された閉塞筒状体であり、開孔径Dは互に重なら
ず、且つ少くとも中央開孔が完全円孔で、隣接開
孔21R,21G及び21G,21Bの間隙部2
5Aをほぼ電極構体2の形成材板厚程度まで狭め
ることによつて0.89D/S<0.98にまで大口径
化されてい、各開孔周囲は電極内部に突出する突
状縁24で囲まれている。然るに隣接開孔21
R,21G及び21G,21Bの間隙部25Aと
両外側開孔21R,21Bと筒側部23との間隙
部25Bは同一幅lで閉塞面22から高さdだけ
電極内部に突出し、開孔配列線上が凹状にくぼん
でいる。
The electrode assembly 2, like the conventional electrode assembly, has three electron gun shafts 20 with mutually equal distances S between the openings.
It is a closed cylindrical body in which three electron beam transmission apertures 21R, 21G, and 21B located on R, 20G, and 20B are bored in a closed surface 22, and a cylinder side portion 23 is formed continuous with the closed surface 22. , the opening diameters D do not overlap with each other, and at least the central opening is a completely circular hole, and the gap 2 between the adjacent openings 21R, 21G and 21G, 21B
By narrowing 5A to approximately the thickness of the forming material plate of the electrode structure 2, the diameter is increased to 0.89D/S<0.98, and each opening is surrounded by a protruding edge 24 protruding into the electrode. There is. However, the adjacent opening 21
The gap 25A between R, 21G and 21G, 21B and the gap 25B between the outer openings 21R, 21B and the cylinder side 23 have the same width l and protrude into the electrode by a height d from the closed surface 22, and the openings are arranged. The line is concave.

第5図、第6図に示す様に、閉塞面22に穿設
された三つの開孔21R,21G,21Bの配列
線上部は閉塞面22より距離d離れた電極内部に
あるため、三本の電子銃軸20R,20G,20
Bを含む断面(螢光面に対する水平面)内では、
主電子レンズ形成静電界となる等電位線群26,
26′は各電子ビーム透過開孔ごとに独立して、
ほぼ等しい静電電子レンズを形成し、各開孔部を
経由しない共通の等電位線の発生は最小限に抑え
られている。
As shown in FIGS. 5 and 6, the upper part of the arrangement line of the three openings 21R, 21G, and 21B drilled in the closed surface 22 is located inside the electrode at a distance d from the closed surface 22. Electron gun shaft 20R, 20G, 20
In the cross section including B (horizontal plane to the fluorescent surface),
Equipotential line group 26, which becomes the main electron lens forming electrostatic field,
26' is independently for each electron beam transmission aperture,
Almost equal electrostatic electron lenses are formed, and the generation of common equipotential lines that do not pass through each aperture is minimized.

更に両外側開孔と筒側部との間隙部25Bが隣
接開孔間隙部25Aと同様に閉塞面22から距離
dだけ離れた電極内部にあるため、間隙部25
B,25B′の対向部に於ける等電位線群26,
26′の密度は開孔間隙部25A,25A′の対向
部と同程度に粗状態で等しくなる。従がつて水平
面内での各電子レンズの強さはほぼ等しくなり、
中央及び両外側開孔通過後のこの面内に於ける電
子ビーム径は等しくなる。
Furthermore, since the gap 25B between both outer openings and the cylinder side part is located inside the electrode at a distance d from the closed surface 22, like the adjacent opening gap 25A, the gap 25
Equipotential line group 26 in the opposite part of B, 25B',
The density of the opening gap 26' is approximately the same as that of the opposing portions of the open hole gaps 25A and 25A' in a rough state. Therefore, the strength of each electron lens in the horizontal plane is almost equal,
The diameter of the electron beam in this plane after passing through the central and both outer openings becomes equal.

第7図に示す面内の等電位線群27,27′は
開孔配列方向に形成された間隙部25A,25
B;25A′,25B′の凹状陥没のために、開孔
配列方向と直行する方向が電極内部に凹状に曲率
を持つたと等価となり、等電位線群27,27′
の曲率は第4図の等電位線群17,17′と比較
すると小さくなり、そのレンズの強さも第4図の
面内より弱くなり、この面内での球面収差は軽減
されると共に、第6図の水平面内に於ける各開孔
部の等電位線群26,26′の曲率と等電位線群
27,27′の曲率が大略一致する。このため電
子ビーム透過開孔が配列される螢光面に対する水
平面、及びこれに垂直な面での電子レンズの強さ
が一致し、螢光面上には電子ビーム断面の縦、横
径が一致したビームスポツトが得られる。
The in-plane equipotential lines 27, 27' shown in FIG.
B: Due to the concave depressions of 25A' and 25B', the direction perpendicular to the aperture arrangement direction is equivalent to having a concave curvature inside the electrode, and the equipotential line group 27, 27'
The curvature of is smaller than that of the equipotential line group 17, 17' in FIG. 4, and the strength of the lens is also weaker than in the plane of FIG. The curvature of the equipotential line group 26, 26' of each opening in the horizontal plane of FIG. 6 is approximately the same as the curvature of the equipotential line group 27, 27'. Therefore, the strength of the electron lens on the horizontal plane and the plane perpendicular to the fluorescent surface where the electron beam transmission apertures are arranged are the same, and the vertical and horizontal diameters of the electron beam cross section are the same on the fluorescent surface. A bright beam spot can be obtained.

以上述べた様に本発明によれば、電子ビーム透
過開孔の大口径化により主電子レンズの球面収差
を減少させ、中央及び両外側電子レンズの強さ、
及び陰極線管螢光面に対する水平、垂直面内のレ
ンズ強さを一致さることが可能となり、中央電子
ビームと両外側電子ビームの解像度の差を除去
し、夫々の螢光面水平、垂直方向の解像度を一致
させて、各電子ビームによる解像度を著しく改善
出来る。この改善効果は特に高輝度画像となる陰
極放出電流が大きくて、主電子レンズの電子ビー
ム透過開孔部に於ける電子ビーム束の占有率が大
きくなつた場合、解像度の劣化がなく顕著にな
る。
As described above, according to the present invention, the spherical aberration of the main electron lens is reduced by increasing the diameter of the electron beam transmission aperture, and the strength of the central and both outer electron lenses is increased.
It is now possible to match the lens strength in the horizontal and vertical planes with respect to the fluorescent surface of the cathode ray tube, eliminating the difference in resolution between the central electron beam and both outer electron beams, and adjusting the strength of the lens in the horizontal and vertical directions of each fluorescent surface. By matching the resolutions, the resolution of each electron beam can be significantly improved. This improvement effect becomes noticeable without deterioration of resolution, especially when the cathode emission current resulting in a high-brightness image is large and the occupation rate of the electron beam flux in the electron beam transmission aperture of the main electron lens becomes large. .

【図面の簡単な説明】[Brief explanation of drawings]

第1図、第2図は二つの隣接開孔間隙を狭める
ことにより開孔相互距離Sと開孔径Dとを0.89
D/S0.98と大口径化されたインライン径一体
化構造をした電子銃の主電子レンズ電極構体の断
面図と平面図を、第3図、第4図は前記一対の電
極を互に対向させ夫々所定の電圧比にある高電圧
と低電圧を印加した場合、三本の電子銃軸を含む
断面、及びこの断面に垂直で、中央の電子銃軸を
含む断面内での主電子レンズ静電界を、第5図は
本発明の一実施例を示すインライン型一体化構造
電子銃の主電子レンズ電極構体の斜視図を、第
6、第7図は前記一対の電極を互に対向させ夫々
所定の電圧比にある高電圧と低電圧を印加した場
合、三本の電子銃軸を含む断面、及びこの断面に
垂直で、中央の電子銃軸を含む断面内での主電子
レンズ静電界を夫々示す。 10R,10G,10B;20R,20G,2
0B……電子銃軸、11R,11G,11B;2
1R,21G,21B……電子ビーム透過開孔、
12,22……閉塞面、13,23……筒側部、
14,24……突状縁、15,25A,25B…
…間隙部、16,16′,17,17′;26,2
6′,27,27′……等電位線群。
Figures 1 and 2 show that by narrowing the gap between two adjacent holes, the mutual distance S and the hole diameter D can be reduced to 0.89.
Figures 3 and 4 show a cross-sectional view and a plan view of the main electron lens electrode structure of an electron gun that has an in-line diameter integrated structure with a D/S of 0.98 and a large diameter. When a high voltage and a low voltage at a predetermined voltage ratio are applied to the main electron lens, the main electron lens static voltage is FIG. 5 is a perspective view of the main electron lens electrode structure of an in-line integrated structure electron gun showing an embodiment of the present invention, and FIGS. 6 and 7 show the pair of electrodes facing each other, respectively. When a high voltage and a low voltage with a predetermined voltage ratio are applied, the main electron lens electrostatic field in the cross section including the three electron gun axes and the cross section perpendicular to this cross section and including the central electron gun axis is Show each. 10R, 10G, 10B; 20R, 20G, 2
0B...Electron gun axis, 11R, 11G, 11B; 2
1R, 21G, 21B...electron beam transmission aperture,
12, 22... Closed surface, 13, 23... Cylinder side part,
14, 24... protruding edge, 15, 25A, 25B...
...Gap, 16, 16', 17, 17'; 26, 2
6', 27, 27'... Equipotential line group.

Claims (1)

【特許請求の範囲】[Claims] 1 突状縁で囲まれた独立する三つの開孔がイン
ライン配列に穿設された閉塞面と筒側部とを有す
る閉塞筒状体電極を含むインライン型電極構体に
おいて、上記配列方向の中央開孔と両外側開孔と
の間隙及び両外側開孔と筒側部との間隙の上記閉
塞面を凹状に窪ませたことを特徴とするインライ
ン型電極構体。
1. In an in-line electrode assembly including a closed cylindrical electrode having a closed surface and a cylindrical side portion in which three independent holes surrounded by a protruding edge are formed in an in-line arrangement, the central opening in the arrangement direction is An in-line electrode structure characterized in that the closed surfaces of the gap between the hole and both outer openings and the gap between both outer openings and the cylinder side part are recessed in a concave shape.
JP17744583A 1983-09-26 1983-09-26 Inline type electrode structure Granted JPS6070645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17744583A JPS6070645A (en) 1983-09-26 1983-09-26 Inline type electrode structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17744583A JPS6070645A (en) 1983-09-26 1983-09-26 Inline type electrode structure

Publications (2)

Publication Number Publication Date
JPS6070645A JPS6070645A (en) 1985-04-22
JPH0360143B2 true JPH0360143B2 (en) 1991-09-12

Family

ID=16031068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17744583A Granted JPS6070645A (en) 1983-09-26 1983-09-26 Inline type electrode structure

Country Status (1)

Country Link
JP (1) JPS6070645A (en)

Also Published As

Publication number Publication date
JPS6070645A (en) 1985-04-22

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