JPS58201336A - 半導体装置における配線層幅の測定方法 - Google Patents
半導体装置における配線層幅の測定方法Info
- Publication number
- JPS58201336A JPS58201336A JP8432582A JP8432582A JPS58201336A JP S58201336 A JPS58201336 A JP S58201336A JP 8432582 A JP8432582 A JP 8432582A JP 8432582 A JP8432582 A JP 8432582A JP S58201336 A JPS58201336 A JP S58201336A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- wiring layer
- test
- width
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000005259 measurement Methods 0.000 title description 4
- 238000012360 testing method Methods 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000011505 plaster Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8432582A JPS58201336A (ja) | 1982-05-19 | 1982-05-19 | 半導体装置における配線層幅の測定方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8432582A JPS58201336A (ja) | 1982-05-19 | 1982-05-19 | 半導体装置における配線層幅の測定方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58201336A true JPS58201336A (ja) | 1983-11-24 |
| JPS6226178B2 JPS6226178B2 (en, 2012) | 1987-06-08 |
Family
ID=13827357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8432582A Granted JPS58201336A (ja) | 1982-05-19 | 1982-05-19 | 半導体装置における配線層幅の測定方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58201336A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002286780A (ja) * | 2001-03-23 | 2002-10-03 | Nippon Sheet Glass Co Ltd | 金属配線の検査方法および検査に適した半導体デバイスの構造 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02146980U (en, 2012) * | 1989-05-10 | 1990-12-13 |
-
1982
- 1982-05-19 JP JP8432582A patent/JPS58201336A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002286780A (ja) * | 2001-03-23 | 2002-10-03 | Nippon Sheet Glass Co Ltd | 金属配線の検査方法および検査に適した半導体デバイスの構造 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6226178B2 (en, 2012) | 1987-06-08 |
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