JPS58200560A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS58200560A JPS58200560A JP8519182A JP8519182A JPS58200560A JP S58200560 A JPS58200560 A JP S58200560A JP 8519182 A JP8519182 A JP 8519182A JP 8519182 A JP8519182 A JP 8519182A JP S58200560 A JPS58200560 A JP S58200560A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- semiconductor element
- heat transfer
- semiconductor device
- wire group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明はフェイスダウンポンディングされ九半尋体系
子を有する半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a face-down bonded semiconductor device having a nine-half-fathom structure.
従来この檜の装置として例えばよりＭ Ｊｏｕｒｎａｌ
ｏｆｒｅｓｅａｒｃｈ ａｎｄ、ｄｅｖｅｌｏｐｍｅ
ｎｔＩＩｖｏＬ ２６・Ｎｏ１ΦＪｔ＝ｖ、ｕ、５ｒｙ
１９８２の４７ＪＭで示されているものがある。このも
のの概略を第１図にボす。図において、【１）は基板、
（２）バー主面Ｖｃａｆｆ＆）４ｍ、（２ａ） ’Ｅ有
し、コノ電極（ム）を基板１１１／Ｃ７エイスダウンボ
ンデイングして固定され九半導体素子、（３）は半導体
系子（２）の他主面上に離れて配置され半導体素子（２
）とメ１向した部分に円筒形凹部を有するモジュールの
ハウジ／ぺ（４］はハウジング（３）の円筒形凹部に挿
入され半導体素子（２）の他主面上に一端が接するピス
ト７、＜５）はハウジング（３）の円筒形凹部の円に設
けられ一端が円筒形凹部の底に接し他端がピストン（４
）を押える役割をするスプリングで、約１００ｇ 程度
の圧力を半導体素子（２）に加えることによって磁極（
２ａ）と基板（１）との接触を保つようにするものであ
る。（句はハウジングに接して設けられその内部に冷却
液が流れる冷却路（６ａ）を有する放熱体である。なお
、上記基板（１）とハウジング（３）との間に形成され
る空間０４内には熱伝導性の良いヘリウムか封入されて
いる。Conventionally, as a device of this cypress, for example, M Journal
ofresearch and, developme
ntIIvoL 26・No1ΦJt=v, u, 5ry
There is one shown in 47JM of 1982. An outline of this is shown in Figure 1. In the figure, [1] is the substrate,
(2) Bar main surface Vcaff&) 4m, (2a) 'E, fixed electrode (mu) by substrate 111/C7 eighth down bonding, 9 semiconductor elements, (3) semiconductor element (2) Semiconductor elements (2
) and a piston 7 (4) of the module having a cylindrical recess in a portion facing 1 is inserted into the cylindrical recess of the housing (3) and has one end in contact with the other main surface of the semiconductor element (2); <5) is provided in the circle of the cylindrical recess of the housing (3), one end is in contact with the bottom of the cylindrical recess, and the other end is in contact with the piston (4).
) by applying approximately 100g of pressure to the semiconductor element (2).
2a) and the substrate (1) are maintained in contact with each other. (The phrase refers to a heat radiator that is provided in contact with the housing and has a cooling path (6a) in which a cooling liquid flows. Note that the space 04 formed between the substrate (1) and the housing (3) is is filled with helium, which has good thermal conductivity.
このように構成され九半導体装！１１７Ｉ：おいて、そ
の放熱作用について説明する。Nine semiconductor devices are configured like this! 117I: Now, its heat dissipation effect will be explained.
半導体索子（２）から発生する熱はピストン（４）およ
びスプリング（５Ｊを介してハウジング（勾に伝えられ
ると共に基板１１１とハウジング（３）とのｌＩ！１１
Ｖｃ介在４−るヘリウムを介してもハウジング（３３Ｋ
伝えられる。The heat generated from the semiconductor cable (2) is transmitted to the housing via the piston (4) and the spring (5J), and is also transferred to the lI!11 between the substrate 111 and the housing (3).
Vc intervening 4- Helium housing (33K
Reportedly.
このハウジング（３）に伝えられ比熱は、放熱体（６）
ニ伝えられ、放熱体（６）内部の冷却！ （６ａ）を訛
れる冷却液により半導体装置の外部に放出される。The specific heat transferred to this housing (3) is transferred to the heat sink (6)
2, the inside of the heat sink (6) is cooled! (6a) The coolant is discharged to the outside of the semiconductor device.
しかるに、この半導体装置にあっては半導体素子（２）
からの放熱経路がピストン（４）Ｉスプリング（５）。However, in this semiconductor device, the semiconductor element (2)
The heat radiation path from the piston (4) to the I spring (5).
ハウジング（３）へと伝わる、いわば点、線あるいは面
接触であるため各接触部の熱抵抗が大きくなる傾向にあ
り、この点を補電めにヘリウ九関圓内に介在させている
が、ヘリウムの気密封止に注意をはらう必要があシ、し
かも長時間の使用によってはヘリウムが流出し、所望の
放熱効果が得られなくなってし家つという欠点を有する
ものであった。The thermal resistance of each contact part tends to be large because it is a so-called point, line, or surface contact that is transmitted to the housing (3), and this point is interposed within the Heliu nine barrier for power supplementation. Care must be taken to hermetically seal the helium, and furthermore, if used for a long time, the helium may leak out, making it impossible to obtain the desired heat dissipation effect.
一方、上記従来例における冷却液による放熱を、ハウジ
ング（５７Ｋ放熱フィン等を設は空冷により放熱させる
方法も考えられるが□、半導体系子（２）から１１
ハウジング（５）までの熱抵抗値とノ）ウジング（５）
から周囲金気までの熱抵抗値との総和は極めて太き（す
るため上記第１図に示したものよりさらに放熱特性が悪
くなる欠点があった。On the other hand, it is also possible to replace the heat dissipation by the cooling liquid in the above conventional example with air cooling by installing a housing (57K heat dissipation fins, etc.).ノ) Uzing (5)
The total sum of the thermal resistance values from the temperature to the surrounding metal is extremely large (therefore, there was a drawback that the heat dissipation characteristics were even worse than those shown in FIG. 1 above).
これら放熱経路の熱抵抗および取扱い性の改善を図るも
のとして第２図に示すようなものが考えられる。この第
２図のものは第１図ｖｃ不すものの半導体系子（２）と
ハウジング（５）との放熱経路としてピストン（４）お
よびスプリング（５）を用いｔものに対し、半導体素子
（２）と放熱フィン（８）との閾にソフトメタル（７）
を配置し、それぞれと接合してなる半導体装置である。A device as shown in FIG. 2 can be considered to improve the thermal resistance and handling properties of these heat dissipation paths. The one shown in Fig. 2 uses a piston (4) and a spring (5) as a heat dissipation path between the semiconductor element (2) and the housing (5), as opposed to the one shown in Fig. 1. ) and the radiating fin (8) with soft metal (7) on the threshold.
This is a semiconductor device formed by arranging and bonding to each.
この半導体装＃Ｌにおいては、半導体素子（２）から放
熱フィン（８］までの熱抵抗値は４１図のものに比べて
良（なるが、反面半導体素子（２）の温匿変化によりソ
フトメタル（７）が伸縮を繰返し、長期間の使用により
半導体素子（２）とソフトメタル（７］と放熱フィン（
８Ｊとの閾にギャップが発生し、熱伝導特性を悪化させ
信頼性と安定性を欠く欠点がある。In this semiconductor device #L, the thermal resistance value from the semiconductor element (2) to the heat dissipation fin (8) is better than that in Fig. (7) repeatedly expands and contracts, and due to long-term use, the semiconductor element (2), soft metal (7), and heat dissipation fin (
A gap occurs in the threshold with 8J, which deteriorates the heat conduction characteristics and has the disadvantage of lacking reliability and stability.
この発明は上記のような欠点を改善するためになされた
もので、フェイスダウンボンディングされた半導体系子
を有したものにおいて、半導体系子に接合された伝熱板
と、この伝熱板に対向した放熱体との間を可撓性伝熱線
群により連結するようにして、放熱特性が良くかつ半導
体系子の熱による伸縮にも対処できつる半導体装置を得
ることを目的とするものである。This invention was made to improve the above-mentioned drawbacks, and in a device having a face-down bonded semiconductor element, a heat exchanger plate bonded to the semiconductor element, and a heat exchanger plate facing the heat exchanger plate are bonded to the semiconductor element. The object of the present invention is to provide a semiconductor device which has good heat dissipation characteristics and can cope with the expansion and contraction of semiconductor elements due to heat, by connecting the heat dissipating body with a flexible heat transfer wire group.
以下、この発明の一実施例を第３図に基づいて説明する
。An embodiment of the present invention will be described below with reference to FIG.
図において、（ＩＩは基板、（２）は下側の主面に被数
の電極（２ａ）を有し、この電極（２ａ）を基板（１）
ｉ／（７エイスダウンボンデイングして固定された半導
体系子、（９）は半導体素子（２）の上側の主面に半田
あるいは接着材料などで接合され九銅板からなる伝熱板
。In the figure, (II) is a substrate, (2) has a number of electrodes (2a) on the lower main surface, and these electrodes (2a) are connected to the substrate (1).
i/(7) A semiconductor device fixed by eighth down bonding, (9) is a heat transfer plate made of nine copper plates bonded to the upper main surface of the semiconductor device (2) with solder or adhesive material.
叫は伝熱板（９）と対向して設けられ几銅板からなる放
熱板、Ｕυは伝勢板（９）と放熱板切との間を溶１１な
どにより連結した複数の銅細線の束からなる可撓性伝熱
線群、（８］は放熱板間とネジ又は接着ないしは浴着に
よって接合され几放熱フィンであり、放熱板間とともに
放熱体を構成している。A heat sink is a heat sink made of a solid copper plate, which is provided opposite the heat transfer plate (9), and a Uυ is a bundle of multiple thin copper wires connected by welding 11 between the heat transfer plate (9) and the heat sink. The flexible heat transfer wire group (8) is a heat-radiating fin that is joined between the heat-radiating plates by screws, adhesive, or bath coat, and constitutes a heat-radiating body together with the heat-radiating plates.
この半導体装置では、半導体系子（２）で発生“しｆ：
熱の大部分は伝熱板（９）から可撓性伝熱線群（１１）
へ、更に放熱板間から放熱フィン（８１へと熱伝導が生
じ、装置外部へ放出されるものである。この場合の熱抵
抗値は可撓性伝熱線＃ １ｌｌ）の断面積、長さおよび
熱伝導率によって決まシ、その値を適当Ｋｆｉぶことが
できるため、第１図に示゛、几ものに比し所望の低い熱
抵抗値を得ることができるものである。In this semiconductor device, "f:" occurs in the semiconductor element (2).
Most of the heat is transferred from the heat transfer plate (9) to the flexible heat transfer wire group (11).
Then, heat conduction occurs between the heat sinks to the heat sink fins (81) and is released to the outside of the device.The thermal resistance value in this case is determined by the cross-sectional area, length, and length of the flexible heat transfer wire #1ll. Since the value is determined by the thermal conductivity and can be adjusted appropriately, it is possible to obtain a desired lower thermal resistance value than that of the more refined one shown in FIG.
しかも、半導体系子（２）で発生する熱による半導体素
子（２）および伝熱板（９）等の伸縮は可撓性伝熱線群
（１Ｋ）の応力吸収効果によって吸収されるので、半導
体装置に悪影響をおよぼすこともなくなるものである。Moreover, the expansion and contraction of the semiconductor element (2) and the heat transfer plate (9) due to the heat generated in the semiconductor element (2) is absorbed by the stress absorption effect of the flexible heat transfer wire group (1K), so the semiconductor device There will be no negative impact on the.
ま几、この半導体装置の組立の際には、伝熱板（釦と可
撓性伝熱線群０りと放熱板切とを接合により前もって一
体化しておき、その後、半導体系子（２）と放熱フィン
（８）とに、一体化された伝熱４ｉ（９１および放熱板
ＱＱＫそれぞれ接続するようにすれば、組立作業が簡単
になるという利点を有するものである。なお、可撓性伝
熱線群（１０は捩って設けることによりさらに応力吸収
効果を高めることもできる。However, when assembling this semiconductor device, the heat transfer plate (button, flexible heat transfer wire group 0) and heat sink plate are integrated in advance by bonding, and then the semiconductor element (2) and If the integrated heat transfer 4i (91) and the heat sink QQK are connected to the heat dissipation fins (8), the assembly work is simplified. The stress absorption effect can be further enhanced by twisting the group (10).
したがって；この半導体ａ直においては、半導体素子（
２）と放熱体との間には熱的には崎な結汗であるが、機
械的には疎な結合とな９、材料の違いからくる歪みは発
生せず、有効に放熱が行なわれるものである。また、半
導体系子（２）が若干斜めにｆｉ ツｉ： ４板（１１
ｖζ７エイスダウンボンデイングされ比としても、可決
性伝熱線群（１りの持つ応力吸収効果によって半導体系
子（２）と伝熱板（９）とは平行に溶着すれる利点を有
する。Therefore; in this semiconductor a direct, the semiconductor element (
2) There is a slight amount of sweat between the heat dissipation body and the heat dissipation body, but mechanically there is a loose bond9, so there is no distortion due to the difference in materials, and heat is dissipated effectively. It is something. Also, the semiconductor element (2) is slightly diagonally fi tsui: 4 plates (11
Vζ7 eighth down bonding also has the advantage that the semiconductor element (2) and the heat transfer plate (9) are welded in parallel due to the stress absorption effect of the transmissive heat transfer wire group (1).
なお、上記実施例では、伝熱板（９）、放熱板間および
可焼性伝熱線群（１１）の材料を鋼材として説明したが
、伝熱板（９）にはシリコンと熱膨張係数のほぼ等しい
モリブデンを用いるなり、可焼性伝熱線群１１１には応
力吸収効果の良いステンレス線を混用するなシ、アルミ
ニウム線を混用するなりして椋々の材料を選択しても同
様の効果を得られるものである。さらに、可焼性伝熱線
群（１すを弾性を有するｗ脂層等Ｖｃｍめ込んで形成す
ることにより、応力吸収効果をざらＶｃｗ脂層にも表せ
ることもできる。In the above embodiment, the material of the heat exchanger plate (9), the space between the heat sinks, and the combustible heat transfer wire group (11) was explained as steel, but the heat exchanger plate (9) is made of silicon with a coefficient of thermal expansion. The same effect can be obtained even if the materials are selected by using molybdenum, which is almost the same, or by mixing stainless steel wire with a good stress absorption effect for the flammable heat transfer wire group 111, or by mixing aluminum wire. That's what you get. Furthermore, by forming the flammable heat transfer wire group (1) into an elastic W fat layer or the like, the stress absorption effect can be exhibited even in the rough Vcw fat layer.
ま友、実施例では可焼性伝熱線群（Ｉυの一端を放熱板
間と連結させたが、可撓性伝熱線群（１１）は放、１″
板四を省いて直接放熱フィン（８Ｊに連結させてもよい
・
この発明は以上述べたように、フェイスダウンボンディ
ングされ之半導体素子を有したものにおいて、半導体系
子に接合された伝熱板と、この伝熱板に対回し几放熱体
との間を町−性伝熱巌群により連結し九ので、半導体素
子から発生する熱を効果的に放熱体に伝達でき、しかも
半導体系子から発生する熱による各部の歪みも０Ｔ１！
＋！性伝熱線群の応力吸収効果によシ吸収でき、きわめ
て放熱特性と信頼性が向上する効果がある。In the example, one end of the flammable heat transfer wire group (Iυ) was connected to between the heat sinks, but the flexible heat transfer wire group (11)
It is also possible to omit the plate 4 and connect it directly to the heat dissipation fin (8J). As described above, this invention is a device having a face-down bonded semiconductor element, and a heat exchanger plate bonded to the semiconductor element. This heat transfer plate is connected to the rotary heat radiator by means of a group of heat transfer holes, so that the heat generated from the semiconductor element can be effectively transferred to the heat radiator, and the heat generated from the semiconductor element can be effectively transferred. The distortion of each part due to the heat is also 0T1!
+! The stress can be absorbed by the stress absorption effect of the group of conductive heat transfer wires, which has the effect of significantly improving heat dissipation characteristics and reliability.
第１図および第２図は、それぞれ従来の半導体装置の断
１ＪＩｌｉ図、第３図はこの発明の一実ぬ例を不す断面
図である。
図において、（１１は基板、（２）は半導体素子、（２
ａ）は電極、（３月才モジュールのハウジング、（４）
はピストン、（５月まスプリング、（６月ｊ放熱体、（
７）はソフトメタル、（８）は放熱フィン、（９）は伝
熱板、Ｕりは放熱板、（ｌυは可撓性伝熱線群である。
なお、各図中、同一符号は同−又は相当部分を小す０
代理人 葛 野 信 −
２６５
第１図
第２図1 and 2 are cross-sectional views of a conventional semiconductor device, respectively, and FIG. 3 is a cross-sectional view showing an example of the present invention. In the figure, (11 is the substrate, (2) is the semiconductor element, (2)
a) Electrode, (3 month old module housing, (4)
is a piston, (May spring, (June j heat dissipator, (
7) is a soft metal, (8) is a heat dissipation fin, (9) is a heat transfer plate, Uri is a heat dissipation plate, (lυ is a group of flexible heat transfer wires. In each figure, the same symbols are the same - Or reduce the corresponding part 0 Agent Shin Kuzuno - 265 Figure 1 Figure 2
Claims (1)
ダタンポンデイングして固定された半導体系子、この半
導体系子の他生面に接合された伝熱板、この伝熱板と対
向する放熱体、及び上記伝熱板と放熱体との間を連結す
る可Ｉｌ性伝熱線群を伺えたことを特徴とする半導体装
置。A semiconductor device having a plurality of @poles in a single curve and fixed to a substrate by bonding these magnetic poles to a substrate, a heat transfer plate bonded to the other surface of this semiconductor device, and this heat transfer plate. A semiconductor device characterized in that a heat dissipating body facing the heat dissipating body and a group of flexible heat transfer wires connecting the heat dissipating plate and the heat dissipating body can be seen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8519182A JPS58200560A (en) | 1982-05-18 | 1982-05-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8519182A JPS58200560A (en) | 1982-05-18 | 1982-05-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58200560A true JPS58200560A (en) | 1983-11-22 |
Family
ID=13851757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8519182A Pending JPS58200560A (en) | 1982-05-18 | 1982-05-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58200560A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0139973A2 (en) * | 1983-08-25 | 1985-05-08 | Siemens Aktiengesellschaft | Arrangement for dissipating heat from layered circuits |
| EP0245698A2 (en) * | 1986-05-12 | 1987-11-19 | International Business Machines Corporation | Packaging a semiconductor chip device |
| US5212625A (en) * | 1988-12-01 | 1993-05-18 | Akzo Nv | Semiconductor module having projecting cooling fin groups |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53148979A (en) * | 1977-05-31 | 1978-12-26 | Ibm | Heat transfer connector |
-
1982
- 1982-05-18 JP JP8519182A patent/JPS58200560A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53148979A (en) * | 1977-05-31 | 1978-12-26 | Ibm | Heat transfer connector |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0139973A2 (en) * | 1983-08-25 | 1985-05-08 | Siemens Aktiengesellschaft | Arrangement for dissipating heat from layered circuits |
| EP0245698A2 (en) * | 1986-05-12 | 1987-11-19 | International Business Machines Corporation | Packaging a semiconductor chip device |
| US4714953A (en) * | 1986-05-12 | 1987-12-22 | International Business Machines Corporation | Welded wire cooling |
| US5212625A (en) * | 1988-12-01 | 1993-05-18 | Akzo Nv | Semiconductor module having projecting cooling fin groups |
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