JPS58199741A - Enamel composition - Google Patents
Enamel compositionInfo
- Publication number
- JPS58199741A JPS58199741A JP8204782A JP8204782A JPS58199741A JP S58199741 A JPS58199741 A JP S58199741A JP 8204782 A JP8204782 A JP 8204782A JP 8204782 A JP8204782 A JP 8204782A JP S58199741 A JPS58199741 A JP S58199741A
- Authority
- JP
- Japan
- Prior art keywords
- enamel
- substrate
- baked
- cao
- mgo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
Abstract
Description
【発明の詳細な説明】
本発明は、新規なホーロー組成物に関し、金属コア上に
焼き付けることにより高温焼付ペーストの使用を可能と
するとともに、集積度の高い混成集積回路用の基板とし
て使用し得るホーロー基板を作製可能とすることを目的
とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel enamel composition which enables the use of a high temperature baking paste by baking onto a metal core and which can be used as a substrate for highly integrated hybrid integrated circuits. The purpose is to make it possible to produce a hollow substrate.
従来、電子回路用の基板としては、優れに電気的特性を
持つ高温焼付ペーストの使用が可能なセラミックス製の
基板が用いられていたが、製造コストが高く、しかも機
械的強度が弱いという欠点があるので、金属コアにホー
ロ一層を焼き付は形成したホーロー基板を用いて上記の
欠点を解消しようとする試みがなされている。Conventionally, ceramic substrates have been used as substrates for electronic circuits, allowing the use of high-temperature baking pastes that have excellent electrical properties, but these have the disadvantages of high manufacturing costs and low mechanical strength. Therefore, attempts have been made to solve the above drawbacks by using a hollow substrate in which a single layer of hollow is baked onto a metal core.
しかし、既存のホーロー組成物を金属コアに焼き付けた
ホーロー基板は、軟化点が約700℃以下と低く、セラ
ミック基板に焼き付は得る高温焼付ペーストを焼き付け
ようとすれば、750℃〜900℃の温度雰囲気下にお
いてホーロ一層が溶融状態となって高温焼付ペーストと
反応するので、高温焼付ペーストを使用することができ
ない。However, existing enamel substrates made of enamel compositions baked into metal cores have a low softening point of about 700°C or less, and if you try to bake a high-temperature baking paste that will not stick to ceramic substrates, it is difficult to bake at temperatures of 750°C to 900°C. A high-temperature baking paste cannot be used because the single layer of enamel becomes molten in a temperature atmosphere and reacts with the high-temperature baking paste.
従って、約650℃以下の温度雰囲気下において焼き付
は可能な低温焼付ペーストを使用することとしている。Therefore, it is decided to use a low-temperature baking paste that can be baked in an atmosphere at a temperature of about 650° C. or lower.
この場合には、ペーストの融点が低く、しかも反応性が
高いので、抵抗値ドリフト等電気的特性が劣ることとな
る。In this case, the paste has a low melting point and high reactivity, resulting in poor electrical properties such as resistance value drift.
また、厚膜混成集積回路の集積度を高める為の積層印刷
法を応用しようとすれば、絶縁層を形成するオーバーガ
ラスの焼成温度がホーロ一層の軟化点よりも高いことか
ら、オーバーガラス焼成時にホーロ一層とホーロー基板
用ペーストとが軟化し、反応し、回路を形成し得なくな
るので、結局積層焼付を行ない得なくなるという欠点も
ある。In addition, when trying to apply the laminated printing method to increase the degree of integration of thick film hybrid integrated circuits, the firing temperature of the overglass that forms the insulating layer is higher than the softening point of a single layer of enamel. Another drawback is that the single layer of enamel and the enamel board paste soften and react, making it impossible to form a circuit, making it impossible to perform lamination baking.
本発明は、ホーロー組成物の組成をCa07〜20重1
%、BaO10〜18重量%、5rO3〜7重量%、M
g03〜13重量%、AA’20310〜22重量%、
5iO220〜30重置%、B2037〜23重量%で
構成し、Al2O3と5102との比を0.5〜0.6
8、CaOとMgOとの比を3.2〜0.11の範囲内
とすることにより、金属コアにホーロー組成物を焼き付
けてホーロ一層を形成する際にワーステナイト(CaO
・5i02 )及びクリストバライト(Si(h)の再
結晶を析出させ、該ホーロ一層の軟化温度を900℃以
上とし得るようにして上記の欠点を解消したものであり
、以下実施例に基づいて詳細に説明する。In the present invention, the composition of the enamel composition is Ca07~20wt1
%, BaO10-18% by weight, 5rO3-7% by weight, M
g03-13% by weight, AA'20310-22% by weight,
5iO2 is composed of 20-30% by weight, B2037-23% by weight, and the ratio of Al2O3 and 5102 is 0.5-0.6.
8. By setting the ratio of CaO and MgO within the range of 3.2 to 0.11, it is possible to prevent worstenite (CaO
・5i02) and cristobalite (Si(h)) are precipitated to make the softening temperature of the hollow layer higher than 900°C, thereby solving the above drawbacks. explain.
ここでA 1203 /S i 02を、、“0,5〜
068の範囲内とL7Th。ゆ、。。よ75E* *”
”*’y/:1□□7.1よなってミクロン単位の印刷
ができなくなり、この比が小さすぎるとホーロー焼成時
にホーロ一層のガラス化が進みすぎ、ペーストが反応し
て回路を組むことができなくなる為である。Here, A 1203 /S i 02 is “0,5~
Within the range of 068 and L7Th. hot water,. . Yo75E* *”
``*'y/: 1□□7.1, so it becomes impossible to print in microns, and if this ratio is too small, the enamel will become too vitrified during enamel firing, and the paste will react and form a circuit. This is because it becomes impossible to do so.
また、CaO/MgOをA、2〜o、ttの範囲内とし
たのは、この比が大きすぎるとパッチ中の揮発成分が多
くなりすぎてバッチ調合及びフリット製造が困難となり
、この比が小さすぎると結晶構造が変化し、膨張係数が
あわなくなる為である。In addition, the reason why CaO/MgO was set in the range of A, 2 to o, tt is because if this ratio is too large, the volatile components in the patch will be too large, making batch preparation and frit manufacturing difficult. This is because if it is too much, the crystal structure will change and the expansion coefficient will no longer match.
金属コアとして50ffX 50ffX0.7++11
の極低炭素鋼板を用い、該極低炭素ホーロー用鋼板の表
面にニッケルメッキ処理を施こした後、第1表の実施例
I、■、■に示す組成のフリットを粉砕し、厚さ120
μとなるよう塗布し、約900℃で5分間焼成してホー
ロー基板を得た。50ffX 50ffX0.7++11 as metal core
Using an ultra-low carbon steel plate of
It was coated so as to have a thickness of .mu. and baked at about 900.degree. C. for 5 minutes to obtain a hollow substrate.
以上の焼成を行なう間において、ホーロ一層は初期の溶
融点において極めて小さな粘性を有し、その後、部分失
透により急激に高い粘性を有するのである。During the above firing, the enamel layer has extremely low viscosity at its initial melting point, and then rapidly increases its viscosity due to partial devitrification.
以上のようにして得られたホーロー基板の一面のX線回
折測定を行なった結果、ワーステナイト(CaO−5i
O2)とクリストバライト(SiO+)の再結晶の析出
が確認された(添付図面参照)。そして、これら再結晶
鉱物によりホーロ一層の表面が固化し、高温焼付ペース
トの使用が可能となるとともに積層焼付によってセラミ
ック基板と同等の集積度を得ることができることとなる
。As a result of X-ray diffraction measurement of one surface of the enamel substrate obtained as described above, it was found that worstenite (CaO-5i
Recrystallization of cristobalite (SiO+) and cristobalite (SiO+) was confirmed (see attached drawing). These recrystallized minerals solidify the surface of the single layer of enamel, making it possible to use a high-temperature baking paste, and also making it possible to obtain a degree of integration equivalent to that of a ceramic substrate by laminated baking.
また、ホーロー基板の電気的特性、熱特性、機械的特性
の測定結果は第2表に示すとおりである。Further, the measurement results of the electrical properties, thermal properties, and mechanical properties of the hollow substrate are shown in Table 2.
第 2 表
また、前記のホーロー基板にアルミナ基板川べりトを8
50℃で10分間焼き付けたところ、ハンダ濡れ性及び
接着強度はアルミナ基板の場合と同様であった。Table 2 Also, 8 pieces of alumina substrate Kawabeito were added to the above-mentioned enamel substrate.
When baked at 50° C. for 10 minutes, the solder wettability and adhesive strength were similar to those of the alumina substrate.
以上のように本発明は金属コアの表面に塗付焼成するこ
とにより著しく高い軟化点を示し、優れた電気的特性を
有する高温焼付ペーストの焼付を可能にし、しかも積層
印刷法を用いて集積度の高い厚膜混成集積回路を得るこ
とができる等特有の効果を奏する。As described above, the present invention makes it possible to bake a high-temperature baking paste that exhibits a significantly high softening point and has excellent electrical properties by applying and baking it on the surface of a metal core. This provides unique effects such as being able to obtain a thick-film hybrid integrated circuit with high performance.
図面は本発明のホーロー組成物を用いて得られたホーロ
一層のX線回析測定結果図。The drawing is an X-ray diffraction measurement result of a single layer of enamel obtained using the enamel composition of the present invention.
Claims (1)
%、5r03〜7重量%、Mg03〜13重量%、A1
2os10〜22重量%、SiO+20〜30重量%、
82037〜23重量%から成り、Al2O3/S i
02を0.5〜0.68、CaO/MgOを3.2〜
0.11の範囲としたことを特徴とするホーロー組成物
。1. Ca07-20% by weight, Ba010-18% by weight, 5r03-7% by weight, Mg03-13% by weight, A1
2os10-22% by weight, SiO+20-30% by weight,
82037~23% by weight, Al2O3/Si
02 from 0.5 to 0.68, CaO/MgO from 3.2 to
An enamel composition characterized in that the porosity is in the range of 0.11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8204782A JPS58199741A (en) | 1982-05-15 | 1982-05-15 | Enamel composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8204782A JPS58199741A (en) | 1982-05-15 | 1982-05-15 | Enamel composition |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58199741A true JPS58199741A (en) | 1983-11-21 |
Family
ID=13763594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8204782A Pending JPS58199741A (en) | 1982-05-15 | 1982-05-15 | Enamel composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58199741A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6135588A (en) * | 1984-07-10 | 1986-02-20 | ヴエー・ツエー・ヘレウス・ゲゼルシヤフト・ミツト・ベシユレンクター・ハフツング | Substrate for printed circuit |
JPS61117275U (en) * | 1985-01-08 | 1986-07-24 |
-
1982
- 1982-05-15 JP JP8204782A patent/JPS58199741A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6135588A (en) * | 1984-07-10 | 1986-02-20 | ヴエー・ツエー・ヘレウス・ゲゼルシヤフト・ミツト・ベシユレンクター・ハフツング | Substrate for printed circuit |
JPS61117275U (en) * | 1985-01-08 | 1986-07-24 |
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