JPS58199563A - ダンパ−ダイオ−ド付トランジスタ - Google Patents
ダンパ−ダイオ−ド付トランジスタInfo
- Publication number
- JPS58199563A JPS58199563A JP57083510A JP8351082A JPS58199563A JP S58199563 A JPS58199563 A JP S58199563A JP 57083510 A JP57083510 A JP 57083510A JP 8351082 A JP8351082 A JP 8351082A JP S58199563 A JPS58199563 A JP S58199563A
- Authority
- JP
- Japan
- Prior art keywords
- region
- emitter
- base
- transistor
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000151 deposition Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57083510A JPS58199563A (ja) | 1982-05-17 | 1982-05-17 | ダンパ−ダイオ−ド付トランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57083510A JPS58199563A (ja) | 1982-05-17 | 1982-05-17 | ダンパ−ダイオ−ド付トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58199563A true JPS58199563A (ja) | 1983-11-19 |
JPH0228895B2 JPH0228895B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-06-27 |
Family
ID=13804476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57083510A Granted JPS58199563A (ja) | 1982-05-17 | 1982-05-17 | ダンパ−ダイオ−ド付トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58199563A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008124671A1 (en) * | 2007-04-09 | 2008-10-16 | Analog Devices, Inc. | Robust esd cell |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS538570A (en) * | 1976-07-12 | 1978-01-26 | Nec Corp | Semiconductor device |
JPS5375762A (en) * | 1976-12-16 | 1978-07-05 | Fuji Electric Co Ltd | Semiconductor device |
JPS57208170A (en) * | 1981-06-17 | 1982-12-21 | Nec Corp | Composite transistor |
-
1982
- 1982-05-17 JP JP57083510A patent/JPS58199563A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS538570A (en) * | 1976-07-12 | 1978-01-26 | Nec Corp | Semiconductor device |
JPS5375762A (en) * | 1976-12-16 | 1978-07-05 | Fuji Electric Co Ltd | Semiconductor device |
JPS57208170A (en) * | 1981-06-17 | 1982-12-21 | Nec Corp | Composite transistor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008124671A1 (en) * | 2007-04-09 | 2008-10-16 | Analog Devices, Inc. | Robust esd cell |
US7656009B2 (en) | 2007-04-09 | 2010-02-02 | Analog Devices, Inc. | Robust ESD cell |
Also Published As
Publication number | Publication date |
---|---|
JPH0228895B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-06-27 |
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