JPS58194377A - 薄膜太陽電池の製造法 - Google Patents
薄膜太陽電池の製造法Info
- Publication number
- JPS58194377A JPS58194377A JP57075415A JP7541582A JPS58194377A JP S58194377 A JPS58194377 A JP S58194377A JP 57075415 A JP57075415 A JP 57075415A JP 7541582 A JP7541582 A JP 7541582A JP S58194377 A JPS58194377 A JP S58194377A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- layer
- polyethylene terephthalate
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57075415A JPS58194377A (ja) | 1982-05-07 | 1982-05-07 | 薄膜太陽電池の製造法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57075415A JPS58194377A (ja) | 1982-05-07 | 1982-05-07 | 薄膜太陽電池の製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58194377A true JPS58194377A (ja) | 1983-11-12 |
| JPH0370388B2 JPH0370388B2 (enExample) | 1991-11-07 |
Family
ID=13575519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57075415A Granted JPS58194377A (ja) | 1982-05-07 | 1982-05-07 | 薄膜太陽電池の製造法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58194377A (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6120315A (ja) * | 1984-07-02 | 1986-01-29 | イーストマン コダツク カンパニー | 半導体装置基板 |
| JPS6284568A (ja) * | 1985-10-08 | 1987-04-18 | Teijin Ltd | 薄膜太陽電池 |
| JPS62134981A (ja) * | 1985-12-06 | 1987-06-18 | Diafoil Co Ltd | 可撓性アモルフアスシリコン太陽電池 |
| WO2000007250A1 (en) * | 1998-07-30 | 2000-02-10 | Agfa-Gevaert Naamloze Vennootschap | Method of producing solar cells |
| WO2000046861A1 (en) * | 1999-02-02 | 2000-08-10 | Agfa-Gevaert N.V. | A method for the production of solar cells |
| WO2008026322A1 (en) | 2006-08-31 | 2008-03-06 | National Institute Of Advanced Industrial Science And Technology | Transparent electrode substrate for solar cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS554994A (en) * | 1978-06-20 | 1980-01-14 | Siemens Ag | Solar battery and method of manufacturing same |
-
1982
- 1982-05-07 JP JP57075415A patent/JPS58194377A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS554994A (en) * | 1978-06-20 | 1980-01-14 | Siemens Ag | Solar battery and method of manufacturing same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6120315A (ja) * | 1984-07-02 | 1986-01-29 | イーストマン コダツク カンパニー | 半導体装置基板 |
| JPS6284568A (ja) * | 1985-10-08 | 1987-04-18 | Teijin Ltd | 薄膜太陽電池 |
| JPS62134981A (ja) * | 1985-12-06 | 1987-06-18 | Diafoil Co Ltd | 可撓性アモルフアスシリコン太陽電池 |
| WO2000007250A1 (en) * | 1998-07-30 | 2000-02-10 | Agfa-Gevaert Naamloze Vennootschap | Method of producing solar cells |
| WO2000046861A1 (en) * | 1999-02-02 | 2000-08-10 | Agfa-Gevaert N.V. | A method for the production of solar cells |
| WO2008026322A1 (en) | 2006-08-31 | 2008-03-06 | National Institute Of Advanced Industrial Science And Technology | Transparent electrode substrate for solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0370388B2 (enExample) | 1991-11-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sang et al. | Textured ZnO thin films for solar cells grown by a two-step process with the atomic layer deposition technique | |
| Ballif et al. | Preparation and characterization of highly oriented, photoconducting WS2 thin films | |
| Roca i Cabarrocas et al. | Substrate selectivity in the formation of microcrystalline silicon: Mechanisms and technological consequences | |
| US4968384A (en) | Method of producing carbon-doped amorphous silicon thin film | |
| DE3855119T2 (de) | Photovoltaisches Bauelement mit einer Halbleiterschicht aus nichteinkristallinem Stoff, welches zumindest Zn,Se und H in einer Menge von 1 bis 4 Atom % enthält | |
| US5002618A (en) | Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film | |
| US5397737A (en) | Deposition of device quality low H content, amorphous silicon films | |
| Abeles et al. | Infrared spectroscopy of interfaces in amorphous hydrogenated silicon/silicon nitride superlattices | |
| JP3037461B2 (ja) | 光起電力素子 | |
| JPS61180426A (ja) | p形アモルファス半導体を堆積させる方法及び電子写真用光受容体の製造方法 | |
| JPS58194377A (ja) | 薄膜太陽電池の製造法 | |
| Hamma et al. | Long range effects of hydrogen during microcrystalline silicon growth | |
| Saitoh et al. | Preparation and properties of microcrystalline silicon films using photochemical vapor deposition | |
| JP3623520B2 (ja) | 薄膜太陽電池の製法 | |
| Barreau et al. | Characteristics of photoconductive MoS2 films grown on NaCl substrates by a sequential process | |
| CA1157963A (en) | Silicon-based semiconductor devices | |
| JPS6041215A (ja) | アモルフアス半導体又は絶縁体材料を含んでなる多層材料 | |
| JPS6284568A (ja) | 薄膜太陽電池 | |
| Chowdhury et al. | Structural and transport properties of nanocrystalline silicon thin films prepared at 54.24 MHz plasma excitation frequency | |
| JP3300802B2 (ja) | 半導体の製造方法 | |
| Achiq et al. | Effects of pre-hydrogenation on the relaxation and bandgap variation of thermally nanocrystallized silicon layers | |
| JPS6360830B2 (enExample) | ||
| JPH0351114B2 (enExample) | ||
| Ray et al. | Preparation of improved quality a-SiGe: H alloy films for device applications | |
| Dubey et al. | Electrical and optical properties of µc-SiH films |