JPS58192386A - 非晶質シリコン太陽電池 - Google Patents
非晶質シリコン太陽電池Info
- Publication number
- JPS58192386A JPS58192386A JP57075132A JP7513282A JPS58192386A JP S58192386 A JPS58192386 A JP S58192386A JP 57075132 A JP57075132 A JP 57075132A JP 7513282 A JP7513282 A JP 7513282A JP S58192386 A JPS58192386 A JP S58192386A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- electrode
- hollow body
- gas
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57075132A JPS58192386A (ja) | 1982-05-07 | 1982-05-07 | 非晶質シリコン太陽電池 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57075132A JPS58192386A (ja) | 1982-05-07 | 1982-05-07 | 非晶質シリコン太陽電池 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58192386A true JPS58192386A (ja) | 1983-11-09 |
| JPH0456475B2 JPH0456475B2 (enrdf_load_stackoverflow) | 1992-09-08 |
Family
ID=13567354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57075132A Granted JPS58192386A (ja) | 1982-05-07 | 1982-05-07 | 非晶質シリコン太陽電池 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58192386A (enrdf_load_stackoverflow) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55108780A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
| JPS5775131A (en) * | 1980-10-29 | 1982-05-11 | Toshiba Corp | Nonlinear resistor granulator |
-
1982
- 1982-05-07 JP JP57075132A patent/JPS58192386A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55108780A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
| JPS5775131A (en) * | 1980-10-29 | 1982-05-11 | Toshiba Corp | Nonlinear resistor granulator |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0456475B2 (enrdf_load_stackoverflow) | 1992-09-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1090454A (en) | Devices including a layer of amorphous silicon | |
| US4605813A (en) | Amorphous silicon solar battery | |
| US20020000631A1 (en) | Photoelectric conversion device and process for producing photoelectric conversion device | |
| GB2146045A (en) | A method of making p-doped silicon films and devices made therefrom | |
| US4640744A (en) | Amorphous carbon electrodes and their use in electrochemical cells | |
| JPS60154521A (ja) | 炭化珪素被膜作製方法 | |
| US4451838A (en) | Semiconductor photoelectric conversion device | |
| JP2000208800A (ja) | 太陽電池及びそれを用いた自己電力供給型表示素子、並びに太陽電池の製造方法 | |
| US5500056A (en) | Solar cell containing low melting point glass layer | |
| CN107768522A (zh) | 一种以石墨烯作为导电材料的钙钛矿薄膜太阳能电池及其制备方法 | |
| JP2000138384A (ja) | 非晶質半導体素子及びその製造方法 | |
| US3368125A (en) | Semiconductor gallium arsenide with germanium connecting layer | |
| JPH0473305B2 (enrdf_load_stackoverflow) | ||
| JPS58192386A (ja) | 非晶質シリコン太陽電池 | |
| JP2011014884A (ja) | 光電変換装置 | |
| JPH0456474B2 (enrdf_load_stackoverflow) | ||
| JP3300802B2 (ja) | 半導体の製造方法 | |
| JP2757896B2 (ja) | 光起電力装置 | |
| JPS59101879A (ja) | 薄膜太陽電池 | |
| JP2815688B2 (ja) | 薄膜太陽電池の製造方法 | |
| JPS5827377A (ja) | 太陽電池素子の製造方法 | |
| JPH03200374A (ja) | 太陽電池の製造方法 | |
| CN116487451A (zh) | 一种化合物-纳米线-化合物结构的载流子选择性传输层及其制备方法 | |
| JPH02260465A (ja) | 太陽電池 | |
| JPS5916326A (ja) | 薄膜の製造方法 |