JPS5818969A - Manufacture of solar battery - Google Patents
Manufacture of solar batteryInfo
- Publication number
- JPS5818969A JPS5818969A JP56117162A JP11716281A JPS5818969A JP S5818969 A JPS5818969 A JP S5818969A JP 56117162 A JP56117162 A JP 56117162A JP 11716281 A JP11716281 A JP 11716281A JP S5818969 A JPS5818969 A JP S5818969A
- Authority
- JP
- Japan
- Prior art keywords
- film
- cdte
- cds
- sintered
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000004020 conductor Substances 0.000 claims description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 abstract description 12
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 abstract description 8
- 239000000843 powder Substances 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- 238000007639 printing Methods 0.000 abstract description 3
- 229910004813 CaTe Inorganic materials 0.000 abstract 1
- 238000001354 calcination Methods 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は太陽電池の製造方法、特にＣｄＴｅ系の太陽電
池の製造方法にかかシ、寿命特性の優れた高性能の太陽
電池を量産性よく製造することのできる方法を提供しよ
うとするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing solar cells, particularly a method for manufacturing CdTe solar cells, and a method for manufacturing high performance solar cells with excellent life characteristics with good mass productivity. This is what we are trying to provide.
…−■族化族化合物手金体用した太陽電池として、もっ
とも広く知られているものはＣｕ ２ Ｓ とＣｄＳの
接合の光起電力効果を利用した太陽電池をあげることが
できる。これはＣｄＳが多結晶であってもかなり性能の
よい太陽電池が実現できるところがＣｕ ２ Ｓ／Ｃｄ
Ｓ系太陽電池の実用化されるに至っていない原因は、
その特性の劣化にあり。The most widely known solar cell using a metal body of a compound of the ...-■ group is a solar cell that utilizes the photovoltaic effect of the junction of Cu 2 S and CdS. This is because even if CdS is polycrystalline, a solar cell with fairly good performance can be achieved using Cu 2 S/Cd.
The reason why S-based solar cells have not been put into practical use is
This is due to the deterioration of its characteristics.
これは、Ｐ形牛導体として使用されているＣ ｕ ２
Ｓの不安定性によるものである。This is Cu 2 which is used as a P type conductor.
This is due to the instability of S.
このような本質的な問題点のあるＣ ｕ ２ Ｓを使用
しない太１＠゛祇池として、ＣｄＴｅ系の太陽電池がら
り、特にＣｄ Ｓ／Ｃｄ Ｔ ｅ系太陽電池は広く研究
されている。この系の太陽電池に於ては、ＣｄＴｅをＰ
形にするだめのアクセプター不純物として主としてＣｕ
化合物が用いられている。Ｃｕをドープする方法として
、ＣｄＴｅ膜をＣｕＣ１水溶液中に浸漬後熱処理する。CdTe-based solar cells, especially CdS/CdTe-based solar cells, have been widely studied as a method that does not use Cu 2 S, which has such inherent problems. In this type of solar cell, CdTe is
Cu is mainly used as an acceptor impurity to form
compound is used. As a method for doping Cu, a CdTe film is immersed in a CuCl aqueous solution and then heat-treated.
Ｃｕ化合物を蒸着する。Ｃｕ化合物の入ったカーボンペ
ーストを印刷後熱処理する等の方法が用いられてきたが
、いずれもＣｕがイオン伝導しやすいため寿命特性は必
ずしも満足すべきものではなかった。Deposit a Cu compound. Methods such as heat-treating a carbon paste containing a Cu compound after printing have been used, but in all of these methods, the life characteristics were not necessarily satisfactory because Cu easily conducts ions.
本発明はこのような点に鑑みて成されたものであり、Ｔ
ｏを添加したカーボンペーストをＣｄＴｅ膜上に印刷し
熱処理すればＣｄＴｅ膜をＰ形化できかつ、同時に一方
の電極を形成できることを見い出したものである。Ｔｏ
ばＣｄ Ｔ ｅの構成物質であり、これをＣｄＴｅ中ヘ
ドープしＴｅ過剰のＣｄＴｅ膜をつくることによりＣｄ
ＴｅをＰ形化することができる。又ＴｏはＣｕのように
イオン伝導しやすいものではないので寿命の安定なもの
ができると考えられる。さらに本発明の方法はスクリー
ン印刷法を用いているので蒸着などによってＴｅを付、
着させるのに比べて工程が簡単である。又カーボンペー
スト中へＴｅを添加するという方法を用いているので添
加量を任意に制御できるという特徴も有している。The present invention has been made in view of these points, and is
It has been discovered that by printing a carbon paste added with o on a CdTe film and heat-treating it, the CdTe film can be made into a P-type, and one electrode can be formed at the same time. To
For example, CdTe is a constituent material of CdTe, and by doping it into CdTe to create a CdTe film with excess Te, Cd
Te can be converted into P-type. Furthermore, since To does not easily conduct ions like Cu, it is thought that a material with a stable life can be produced. Furthermore, since the method of the present invention uses a screen printing method, Te can be added by vapor deposition or the like.
The process is simpler than wearing it. Furthermore, since the method of adding Te into the carbon paste is used, the added amount can be controlled arbitrarily.
以下１本発明の製造方法について、実施例にもとづいて
詳細に説明する。The manufacturing method of the present invention will be described in detail below based on examples.
（実施例１）
ＣｄＳ粉末に融剤としてＣｄＣｌ２を１００重量％プロ
ピレングリコールを２０〜３０重量％加えてＣｄＳ ペ
ーストを作り、これをガラス基板上にスクリーン印刷し
た。乾燥後、これを焼成容器に入れて、窒素気流中で６
９０Ｃの温度で１時間焼結することにより、ＣｄＳ焼結
膜を作成した。次にＣｄＴｅ粉末にＣｄＣｌ２を１重量
％、プロピレングリコールを２０〜３０重量％加えてＣ
ｄＴｅベニストを作シ、これを上記ＣｄＳ焼結膜上にス
クリーン印刷した。乾燥後、これを焼成容器に入れて、
窒素気流中で６４０Ｃで２０分間焼結しＣｄＴｅ焼結膜
をＰ形化するとともに、カーボン電極を形成した。最後
にＣｄＳ側にＡｇ−Ｉｎペーストをスクシー・ン印刷し
てＣｄＳ側の電極をつけ太陽電池素子を完成した。この
太陽電池の真性変換効率は７．８％で６チ月間の屋外の
実働試験では殆ど劣化していなかった。(Example 1) A CdS paste was prepared by adding 100% by weight of CdCl2 and 20 to 30% by weight of propylene glycol as a flux to CdS powder, and this paste was screen printed on a glass substrate. After drying, put it in a baking container and heat it in a nitrogen stream for 6 hours.
A CdS sintered film was created by sintering at a temperature of 90C for 1 hour. Next, 1% by weight of CdCl2 and 20 to 30% by weight of propylene glycol were added to the CdTe powder.
A dTe coating was prepared and screen printed on the CdS sintered film. After drying, put it in a baking container,
The CdTe sintered film was sintered at 640 C for 20 minutes in a nitrogen stream to form a P-type film, and a carbon electrode was also formed. Finally, Ag-In paste was screen printed on the CdS side and electrodes were attached on the CdS side to complete the solar cell element. The intrinsic conversion efficiency of this solar cell was 7.8%, and it showed almost no deterioration during a 6-month outdoor test.
一方、ＣｄＴｅ焼結膜上に０．１重量％のＣｕを含んだ
高純度カーボンペーストをつけ、５ｏｏＣで３０分間熱
処理してつくった太陽電池素子の真性１変換効率はｓ、
１％ 、 ３ｓｏｃで３０分間熱処理し本素子は６．２
％であった。しかしこれらの素子はｔ化が大きく、６チ
月間の屋外の実働試験で前者で１５％、後者で２０チの
劣化率を示した。On the other hand, the intrinsic 1 conversion efficiency of a solar cell element made by applying high-purity carbon paste containing 0.1% by weight of Cu on a CdTe sintered film and heat-treating it at 5ooC for 30 minutes is s,
After heat treatment for 30 minutes at 1% and 3 soc, this device has a 6.2
%Met. However, these elements have a large deterioration rate, and the former showed a deterioration rate of 15% and the latter showed a deterioration rate of 20 cm in an outdoor practical test lasting 6 months.
（実施例２）
酸化インジウムのついたガラス基板上に、ＣｄＳ膜をス
パッター法でっけ、さらにその上にＣｄＴｅ膜を蒸着法
でつけた。次にＴｅを。、３重［１んだ高純度カーボン
ペーストをこのＣｄＴｅ膜上に印刷し３ｏｏＣで３０分
間熱処理し、ＣｄＴｅ膜をＰ形化するとともに、カーボ
ン電極を形成し、太陽電池素子をつくった。この・太陽
電池の真性変換効率は６．６チで６チ月間の屋外の実働
試験では殆ど劣化していなかった。一方％ＣｄＴｅ蒸着
膜上に。、０２チのＣｕ Ｓ Ｏ４を含んだ高純度カー
ボンペーストをつけ、３００Ｃで３０分間熱処理してつ
くった太陽電池素子の真性変換効率は６．９％であった
か、６チ月の実働試験で１０％の劣化率を示した。(Example 2) A CdS film was deposited on a glass substrate coated with indium oxide by a sputtering method, and a CdTe film was further deposited thereon by a vapor deposition method. Next is Te. A triple-layered high purity carbon paste was printed on this CdTe film and heat-treated at 3ooC for 30 minutes to convert the CdTe film into P-type and form a carbon electrode to produce a solar cell element. The intrinsic conversion efficiency of this solar cell was 6.6 cm, and there was almost no deterioration in the 6-month outdoor test. On the other hand, %CdTe deposited film. The intrinsic conversion efficiency of a solar cell element made by attaching a high-purity carbon paste containing 0.2% of CuSO4 and heat-treating it at 300C for 30 minutes was 6.9%, or 10% in a practical test in June. showed the deterioration rate.
なお、実施例１，２に於て高純度カーボンペースト中に
何も添加しない場合は真性変換効率は低く、１％以下で
あった。In addition, in Examples 1 and 2, when nothing was added to the high purity carbon paste, the intrinsic conversion efficiency was low, being 1% or less.
以上述べたように５本発明の方法によれば寿命の安定な
太陽電池素子を簡単な工程で作成できる。As described above, according to the method of the present invention, a solar cell element with a stable lifetime can be produced through a simple process.
特に実施例１で述べたようなＣｄＳ膜、ＣｄＴｅ膜。In particular, a CdS film or a CdTe film as described in Example 1.
電極を全てスクリーン印刷方式で形成させてつくる太陽
電池では工程が量産性に優れているので、本発明の方法
を採用すれば安価で安定な太陽電池を提供することがで
きる。 □
なお、上記実施例ではＣｄＳ／ＣｄＴｅ太陽電池につい
て述べたが、本発明の方法はＣｄＴｅホモ接合太陽電池
などに於てもＣｄＴｅをＰ形化するのに有効であるのは
勿論のことである。A solar cell in which all electrodes are formed by a screen printing method has excellent mass productivity, so if the method of the present invention is adopted, an inexpensive and stable solar cell can be provided. □ In the above example, a CdS/CdTe solar cell was described, but it goes without saying that the method of the present invention is also effective for converting CdTe into P-type in CdTe homojunction solar cells. .
Claims (1)
板上に積層して設ける太陽電池の製造方法において前記
ＣｄＴｅ膜上にＴｏを添加したカーボンペーストを印刷
した後、熱処理を施すことによシ、前記ＣｄＴｅ膜をＰ
形化すると同時に一方の電極を形成することを特徴とす
る太陽電池の製造方法。In a method for manufacturing a solar cell in which a ■-Takumi compound hand conductor film containing at least a CdTe film is laminated on a substrate, a carbon paste to which To is added is printed on the CdTe film, and then heat treatment is performed. The above CdTe film is
A method for manufacturing a solar cell, characterized by forming one electrode at the same time as forming a solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56117162A JPS5818969A (en) | 1981-07-28 | 1981-07-28 | Manufacture of solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56117162A JPS5818969A (en) | 1981-07-28 | 1981-07-28 | Manufacture of solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5818969A true JPS5818969A (en) | 1983-02-03 |
| JPS622711B2 JPS622711B2 (en) | 1987-01-21 |
Family
ID=14704981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56117162A Granted JPS5818969A (en) | 1981-07-28 | 1981-07-28 | Manufacture of solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5818969A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4709466A (en) * | 1985-04-15 | 1987-12-01 | The University Of Delaware | Process for fabricating thin film photovoltaic solar cells |
-
1981
- 1981-07-28 JP JP56117162A patent/JPS5818969A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4709466A (en) * | 1985-04-15 | 1987-12-01 | The University Of Delaware | Process for fabricating thin film photovoltaic solar cells |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS622711B2 (en) | 1987-01-21 |
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