JPS5818774B2 - Method for selectively forming a conductive layer on a substrate having convex portions - Google Patents

Method for selectively forming a conductive layer on a substrate having convex portions

Info

Publication number
JPS5818774B2
JPS5818774B2 JP7771280A JP7771280A JPS5818774B2 JP S5818774 B2 JPS5818774 B2 JP S5818774B2 JP 7771280 A JP7771280 A JP 7771280A JP 7771280 A JP7771280 A JP 7771280A JP S5818774 B2 JPS5818774 B2 JP S5818774B2
Authority
JP
Japan
Prior art keywords
substrate
conductive layer
rubber
convex portion
top surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7771280A
Other languages
Japanese (ja)
Other versions
JPS568893A (en
Inventor
大町督郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7771280A priority Critical patent/JPS5818774B2/en
Publication of JPS568893A publication Critical patent/JPS568893A/en
Publication of JPS5818774B2 publication Critical patent/JPS5818774B2/en
Expired legal-status Critical Current

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Description

【発明の詳細な説明】 本発明は、凸部を有する半導体又は誘電体基板等の基板
の凸部の頂端面上に導電性層を選択的に形成する凸部を
有する基板上への選択的導電性層の形成法の改良に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for selectively forming a conductive layer on a top surface of a convex portion of a substrate such as a semiconductor or dielectric substrate having a convex portion. This invention relates to an improvement in a method for forming a conductive layer.

従来の斯種凸部を有する基板上への選択的導電性層の形
成法においてはホトレジスト層に対する露光処理を光学
マスクを適用してなすを普通とし、この為基板の凸部の
頂端面に精度高く合った光学マスクを要すると共に光学
マスクをホトレジスト層の基板の凸部の頂端面上の部に
対して正確に位置決めするのが面倒でこの事は基板の凸
部の頂端面が微細になる程なおさらである。
In the conventional method of forming a selective conductive layer on a substrate having such convex portions, the photoresist layer is usually exposed to light by applying an optical mask. In addition to requiring a highly matched optical mask, it is troublesome to accurately position the optical mask over the top surface of the convex portion of the substrate in the photoresist layer, and this problem becomes more difficult as the top surface of the convex portion of the substrate becomes finer. Even more so.

よって本発明は光学マスクを適用することなしに従って
光学マスクをホトレジスト層に対して正確に位置決めす
る必要なしに、簡単にホトレジスト層に対する露光処理
をなして基板の凸部の頂端面上に導電性層を選択的に形
成せんとするもので、KTFR,KMERl(何れもコ
ダック社製の商品)等の感光剤としてジアジドを含むゴ
ム系ホトレジスト剤に対して露光をなせば、 光 N5−R−N3→: N−R−N: +2N2・・・・
・・(1)なる化学方程式で示されるように、一般にN
5−R〜N3なる化学式で示されるジアミドが光化学反
応を起してN2 ガスを発生して一般にN−R−Nなる
化学式で示されるナイトレンに転換し、そして なる化学方程式で示されるように、 N−R−Nなる化学式で示されるナイトレ分子の二重結
合部に付加してゴム分子間を架橋する架橋反応を呈し、
これによりゴム分子が網状化され、よって露光されたゴ
ム系ホトレジスト剤が、ゴム系ホトレジスト剤に対する
現像液(ゴム系ホトレジスト剤が上述せるKTFRであ
る場合KTFRDEVELOPER(コダック社製の商
品名))に溶去し難くなるが、上述した(1)式で示さ
れる光化学反応が酸素雰囲気又は酸素を含む雰囲気中で
なされれば、 :N−R−N: +0□→0N−R−NO・・・・・・
・・・(3)なる化学方程式で示されるようにナイトレ
ンが酸化し、このため斯<(1)式で示される化学反応
を酸素雰囲気又は酸素を含む雰囲気でなすか又はなさな
いかにより上述せる(2)式で示される架橋反応に、前
者の場合その架橋反応が抑圧される形で、差を生ずるこ
とに着目してなされたものである。
Therefore, the present invention provides a conductive layer on the top surface of the convex portion of the substrate by easily performing an exposure process on the photoresist layer without applying an optical mask and without having to accurately position the optical mask with respect to the photoresist layer. When exposed to a rubber photoresist agent containing diazide as a photosensitizer such as KTFR or KMERl (both products manufactured by Kodak Company), the light N5-R-N3→ : N-R-N: +2N2...
...As shown in the chemical equation (1), generally N
Diamide represented by the chemical formula 5-R~N3 undergoes a photochemical reaction to generate N2 gas and is generally converted to nitrene represented by the chemical formula N-R-N, and as shown by the chemical equation: It exhibits a crosslinking reaction in which it is added to the double bond of the nitre molecule, which is represented by the chemical formula N-R-N, and crosslinks rubber molecules.
As a result, the rubber molecules are reticulated, and the exposed rubber photoresist agent is dissolved in a developer for the rubber photoresist agent (KTFRDEVELOPER (trade name, manufactured by Kodak) if the rubber photoresist agent is the above-mentioned KTFR). Although it becomes difficult to eliminate, if the photochemical reaction shown by the above formula (1) is performed in an oxygen atmosphere or an atmosphere containing oxygen, :N-R-N: +0□→0N-R-NO...・・・
...Nitrene is oxidized as shown in the chemical equation (3), and therefore the chemical reaction shown in equation (1) is performed or not in an oxygen atmosphere or an oxygen-containing atmosphere, as described above. This was done by focusing on the fact that there is a difference in the crosslinking reaction represented by formula (2), in the former case the crosslinking reaction is suppressed.

なお、上述した(1)〜(3)式におけるRは、ゴム系
ホトレジスト剤がKTFRである場合 で与えられ、そして斯くRが(4)式で与えられる場合
におけるN5−R−N3で示されるジアジドは、「2・
6ニバイス(P−アジドベンジリチン)−4−メチルシ
クロヘキサノン」(2・6−bis(P−azidob
enzylidene ) −4−methylcy
clo −hexanon )と称されるものである。
Note that R in the above formulas (1) to (3) is given when the rubber photoresist agent is KTFR, and is represented by N5-R-N3 when R is given by formula (4). Diazide is “2.
6-bis(P-azidobenzilitine)-4-methylcyclohexanone” (2,6-bis(P-azidobenzilitine)-4-methylcyclohexanone
enzylidene) -4-methylcy
clo-hexanon).

以下図面を伴って本発明の実施例を詳述するに、図A〜
Gは凸部を有する基板のその凸部の頂端面上に選択的に
導電性層を形成する一例を示し、予め得られている図A
に示すように断面例えば台形の凸部1を有する半導体又
は誘電体基板のような基板2上に、図Bに示すように、
導電性層3が各部略々等しい厚さで蒸着、スパッタ等の
適当な手段で付着され、次にこの導電性層3上に図Cに
示すように感光剤としてジアジドを含むゴム系ホトレジ
スト例えば上述せるKTFRでなる層4を同様に各部略
々等しい厚さで例えば塗布手段によって付着し、次に図
りに示すようにガラス板のような透光性平板5を用いて
これをそれが局部的にホトレジスト層4の基板2の凸部
1の頂端面1a上の部4aに当接せる関係で基板2と対
向して配し;た状態で、酸素雰囲気又は酸素を含む雰囲
気中で、透光性平板5を通じてホトレジスト層4に対す
る露光処理をなし、次にホトレジスト層4に対する現像
処理(この場合の現像液は層4がKTFRでなる場合上
述せるKTFRDEVELOPERが使用される)をな
す。
Embodiments of the present invention will be described in detail below with reference to the drawings.
G shows an example of selectively forming a conductive layer on the top surface of a convex part of a substrate having a convex part, and FIG.
As shown in FIG.
A conductive layer 3 is deposited with substantially equal thickness on each part by a suitable means such as vapor deposition or sputtering, and then a rubber-based photoresist containing diazide as a photosensitive agent is deposited on this conductive layer 3 as shown in Figure C, for example as described above. Similarly, a layer 4 made of KTFR is applied to each part to a substantially equal thickness, for example, by coating means, and then a transparent flat plate 5 such as a glass plate is used to locally coat it as shown in the figure. The photoresist layer 4 is placed facing the substrate 2 so as to be in contact with the portion 4a on the top end surface 1a of the convex portion 1 of the substrate 2; The photoresist layer 4 is exposed to light through the flat plate 5, and then the photoresist layer 4 is developed (in this case, when the layer 4 is made of KTFR, the above-mentioned KTFR DEVELOPER is used as the developer).

このようにすれば上述せる露光処理時、層4の部4aに
は透光性平板5が当接しているので、この部4aには酸
素が殆んど作用しないか酸素の作用が層4のこの部4a
以外の部4bに比し弱く、この為露光処理後の層40部
4a及び4bの上述せる(3)式で示される架橋反応に
後者の層4aにつきその架橋反応が抑圧された形で差を
生じ、よって上述せる現像処理後には図Eに示すように
、ホトレジスト層4が、部4aを残して導電性層3上よ
り溶去されるものである。
In this way, during the above-mentioned exposure process, the transparent flat plate 5 is in contact with the portion 4a of the layer 4, so that almost no oxygen acts on this portion 4a, or the action of oxygen does not affect the layer 4. This part 4a
Therefore, in the crosslinking reaction of the layer 40 parts 4a and 4b after exposure treatment, which is expressed by the above-mentioned formula (3), the latter layer 4a has a difference in the crosslinking reaction in the form that the crosslinking reaction is suppressed. Therefore, after the above-described development process, the photoresist layer 4 is dissolved away from above the conductive layer 3, leaving a portion 4a, as shown in FIG.

従ってその後通常のように導電性層3に対してこれに対
するエッチャントを適用してエツチング処理をなして、
図Fに示すように、導電性層3をその基板2の凸部1の
頂端面1a上の部3aをその上に上述せるホトレジスト
層4の溶去されずに残された部4aを配した状態で残し
て基板2上より溶去し、然る後部4a(露光されている
)に対する所謂レジストストリッパ液(例えば 1、R,C,L、社製J−100)を適用してのレジス
ト除去処理をなして、図Gに示すように部4aを導電性
層の部3a上より除去すれば、基板2の凸部1の頂端面
1a上に選択的な導電性層3aが形成されることとなる
のである。
Therefore, the conductive layer 3 is then subjected to an etching process by applying an etchant thereto as usual.
As shown in FIG. The resist is removed from the top of the substrate 2 by leaving it as it is, and then applying a so-called resist stripper liquid (for example, 1, R, C, L, J-100 manufactured by Co., Ltd.) to the rear part 4a (exposed) to remove the resist. By carrying out the treatment and removing the portion 4a from above the conductive layer portion 3a as shown in Figure G, a selective conductive layer 3a is formed on the top end surface 1a of the protrusion 1 of the substrate 2. It becomes.

このように上述した本発明の一例によれば、図Gに示す
ように、基板2の凸部1の頂端面1a上に選択的に導電
性層3aを形成し得るが、この場合導電性層3aが光学
マスクを適用することなしに得られるので、上述した本
発明の一例によれば光学マスクを適用して選択的に導電
性層を形成する従来の方法の冒頭にて前述した欠点を一
掃し得る犬なる特徴を有するものである。
According to the example of the present invention described above, as shown in FIG. Since 3a is obtained without applying an optical mask, the above-mentioned example of the present invention eliminates the drawbacks mentioned at the beginning of the conventional method of selectively forming a conductive layer by applying an optical mask. It has the characteristics of a dog.

【図面の簡単な説明】[Brief explanation of the drawing]

図A〜Gは本発明による凸部を有する基板上への選択的
導電性層の形成法の一例を示す工程図である。 図中1は凸部、2は基板、3は導電性層、3aは導電性
層の部、4はゴム系レジスト層、4a及び4bはゴム系
レジスト層の部、5は透光性平板を夫々示す。
Figures A to G are process diagrams showing an example of a method for forming a selectively conductive layer on a substrate having convex portions according to the present invention. In the figure, 1 is a convex part, 2 is a substrate, 3 is a conductive layer, 3a is a conductive layer part, 4 is a rubber resist layer, 4a and 4b are rubber resist layer parts, and 5 is a transparent flat plate. Show each.

Claims (1)

【特許請求の範囲】[Claims] 1 凸部を有する基板上に導電性層を各部略々等しい厚
さで付着し、次に該導電性層上に感光剤としてジアジド
を含むゴム系ホトレジスト層を各部略々等しい厚さで付
着し、次に透光性平板をそれが局部的に上記ゴム系ホト
レジスト層の上記基板の凸部の頂端面上の部に当接する
関係で上記基板と対向して配した状態で、酸素雰囲気又
は酸素を含む雰囲気中で、上記透光性平板を通じての上
記ゴム系ホトレジスト層に対する露光処理をなし、次に
上記ゴム系ホトレジスト層に対する現像処理をなして上
記ゴム系ホトレジスト層をその上記導電性層の上記基板
の凸部の頂端面上の部上の部を残して上記導電性層上よ
り溶去し、次に上記導電性層に対するエッチャント処理
をなして上記導電性層をその上記基板の凸部の頂端面上
の部をその上に上記ゴム系ホトレジスト層を配した状態
で残して上記基板上より溶去し、然る後上記基板の凸部
の頂端面上に残された導電性層上に配されたゴム系ホト
レジスト層を除去し、」二記基板の凸部の頂端面上に選
択的に導電性層を形成するようにした事を特徴とする凸
部を有する基板上への選択的導電性層形成法。
1. A conductive layer is deposited on a substrate having convex portions with approximately the same thickness at each portion, and then a rubber-based photoresist layer containing diazide as a photosensitive agent is deposited onto the conductive layer at approximately the same thickness at each portion. Next, a light-transmitting flat plate is placed facing the substrate such that it locally contacts the top surface of the convex portion of the substrate of the rubber-based photoresist layer, and is exposed to an oxygen atmosphere or an oxygen atmosphere. The rubber-based photoresist layer is exposed to light through the light-transmitting flat plate in an atmosphere containing The conductive layer is dissolved away from above, leaving a portion on the top surface of the convex portion of the substrate, and then the conductive layer is treated with an etchant to remove the conductive layer from the top of the convex portion of the substrate. The rubber-based photoresist layer is dissolved away from the substrate, leaving a portion on the top surface with the rubber-based photoresist layer disposed thereon, and then the conductive layer left on the top surface of the convex portion of the substrate is coated. A method for selectively forming a conductive layer on a substrate having a convex portion, characterized in that the rubber-based photoresist layer disposed on the substrate is removed and a conductive layer is selectively formed on the top surface of the convex portion of the substrate. Conductive layer formation method.
JP7771280A 1980-06-11 1980-06-11 Method for selectively forming a conductive layer on a substrate having convex portions Expired JPS5818774B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7771280A JPS5818774B2 (en) 1980-06-11 1980-06-11 Method for selectively forming a conductive layer on a substrate having convex portions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7771280A JPS5818774B2 (en) 1980-06-11 1980-06-11 Method for selectively forming a conductive layer on a substrate having convex portions

Publications (2)

Publication Number Publication Date
JPS568893A JPS568893A (en) 1981-01-29
JPS5818774B2 true JPS5818774B2 (en) 1983-04-14

Family

ID=13641498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7771280A Expired JPS5818774B2 (en) 1980-06-11 1980-06-11 Method for selectively forming a conductive layer on a substrate having convex portions

Country Status (1)

Country Link
JP (1) JPS5818774B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172473A (en) * 1990-05-07 1992-12-22 International Business Machines Corporation Method of making cone electrical contact

Also Published As

Publication number Publication date
JPS568893A (en) 1981-01-29

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