JPS58185411A - Preparation of cadmium selenide sulfide particle - Google Patents

Preparation of cadmium selenide sulfide particle

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Publication number
JPS58185411A
JPS58185411A JP6686882A JP6686882A JPS58185411A JP S58185411 A JPS58185411 A JP S58185411A JP 6686882 A JP6686882 A JP 6686882A JP 6686882 A JP6686882 A JP 6686882A JP S58185411 A JPS58185411 A JP S58185411A
Authority
JP
Japan
Prior art keywords
cadmium
cadmium selenide
sulfide
selenide
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6686882A
Other languages
Japanese (ja)
Inventor
Kiyoshi Suzuki
鈴木 洌
Fumio Sumino
文男 角野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP6686882A priority Critical patent/JPS58185411A/en
Publication of JPS58185411A publication Critical patent/JPS58185411A/en
Pending legal-status Critical Current

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  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To prepare cadmium selenide sulfide particle having stable characteristics for electrostatic photography, by introducing H2S into an aqueous solution of Cd ion dispersed with cadmium selenide, and calcining the produced mixture of cadmium selenide and cadmium sulfide. CONSTITUTION:Cadmium selenide is dispersed in an aqueous solution containing Cd ion such as cadmium sulfate, etc. and preferably acidified with sulfuric acid. The concentration of sulfuric acid is preferably 1.5-3.0 N. The amount of the cadmium selenide added to the solution is preferably 5-30mol% based on the resultant mixed crystal. H2S is introduced into the aqueous solution, and the produced precipitate is filtered and dried. The dried mixture is mixed thoroughly with a flux (e.g. NaCl-CdCl2 flux mixture), and calcined preferably at <=600 deg.C to obtain the objective cadmium selenide sulfide particle.

Description

【発明の詳細な説明】 本発明は電子写真用硫セレン化カドミクム粒子O製造方
法に−するtので 411にセレン化カドミウムを核と
して硫化カドミウムを共沈させることを特徴とする硫セ
レン化カドミウム粒子の製造方法Kllするものである
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for producing cadmium selenide sulfide particles O for use in electrophotography.Cadmium sulfide selenide particles are characterized in that 411 is coprecipitated with cadmium sulfide using cadmium selenide as a core. The manufacturing method is described below.

一般的に硫セレン化カド賞つム混晶は、硫化カドミクム
単体から成る光導電体よ)も、高感ftkものをつく・
ることができる、従って、高感度な光導電体が必要な場
合線、硫セレン化カド。
In general, cadmium sulfide cadmium mixed crystals (photoconductors made of cadmium sulfide alone) also produce high-sensitivity ftk.
Therefore, if a highly sensitive photoconductor is required, a sulfuric selenide wire can be used.

ミウムを選択することが有利である。It is advantageous to choose Mium.

硫セレン化カドミウムは、硫化カドイウム粒子と、セレ
ン粒子又はセレン化カド電りム粒子を混合、高温焼成を
行って作成される。しかしこのような従来方法で作成さ
れ九lI−にレン化カドミウム社1次のような欠点があ
った。即ち。
Cadmium selenide sulfide is created by mixing cadmium sulfide particles and selenium particles or cadmium selenide particles and firing the mixture at a high temperature. However, the 9lI produced by such conventional methods had the following drawbacks: Cadmium Renide Co., Ltd. That is.

1 使用する原材料411にセレン化カド々りムのわず
かな変動が出来上つ先光導電体に大きく影響を及ぼすこ
と、すなわち、供給されるセレン化カドミウムの品質が
一定の品質水準を保っていない場合に、生成される硫セ
レン化カドミウムの特性にバッツ命を与えること。
1. Slight fluctuations in cadmium selenide in the raw materials 411 used have a large effect on the photoconductor, that is, the quality of the cadmium selenide supplied does not maintain a constant quality level. In the case, the properties of the cadmium sulfur selenide produced are given life.

2 硫化カドンウム、硫竜しン化カドンウムO混合工楊
が一工根多く必要であること、又。
2. Caddonium sulfide, caddonium sulfide, sulfur, sulfide, caddonium O mixed with a large amount are required, and.

混合が必ずしも均一に行われないこと。Mixing is not always uniform.

而して本発明はこのような欠点を解決する製造方法を提
供することを主える目的とする。
Therefore, the main object of the present invention is to provide a manufacturing method that solves these drawbacks.

本発明による硫セレン化カドミウム粒子の製造方法は、
セレン化カドミウムを分散させ九カドミクムイオン水溶
液中に硫化水嵩を導入してセレン化カドミウムと硫化カ
ドミウムの温合物を生成後、#混合物を焼成することを
特徴とするものである。
The method for producing cadmium selenide sulfate particles according to the present invention includes:
This method is characterized by dispersing cadmium selenide and introducing aqueous sulfide into an aqueous solution of nine cadmium ions to produce a warm mixture of cadmium selenide and cadmium sulfide, and then firing the mixture.

即ち、本発明はセレン化カドきラムを核として硫化カド
ミウムの沈澱をつくることにより、上記欠点が改喪され
る亀のである。
That is, the present invention overcomes the above drawbacks by forming a precipitate of cadmium sulfide using cadmium selenide as a core.

この方法による利点は、硫化カドオウム、セレン化カド
ミウムの混合物が硫化カドオウム作成時に出来てしまう
点、又、混合がかtk!T均一に行われる点、更に、混
合ニーをなくすことができる点などがあり、更に、付随
的に、皺方法で作成され九混合物を用い九場合には、ド
ナー不純物を更に減少させても、長波長感度が得られる
などの有利な点がある。この丸め光メモリーを更に少な
くすることができ、特性の安定性は更に増加する。
The advantage of this method is that a mixture of cadmium sulfide and cadmium selenide is created when making cadmium sulfide, and the mixing is easy! It can be carried out uniformly, furthermore, the mixing knee can be eliminated, and incidentally, if a mixture prepared by the wrinkle method is used, donor impurities can be further reduced. It has advantages such as long wavelength sensitivity. This rounding optical memory can be further reduced, and the stability of characteristics is further increased.

なお、光メモリーが増大すると光応答遮縦を遅くシ、ζ
o**casを用いて作成される感光体を高速01写機
に適用すると初期コピーにおける明部と暗部の静電コン
トラストが不十分となる。
Note that as the optical memory increases, the photoresponse blockage becomes slower and ζ
If a photoreceptor made using o**cas is applied to a high-speed 01 photocopier, the electrostatic contrast between bright and dark areas in initial copying will be insufficient.

i九、特にレーザー光源を用いたコピーへの簀求が填わ
れ始めると、感光体粒子としては長波長、411にレザ
ー光の関係から750〜800nu以上での感度を有す
るものが必要となってくる。この丸めKは、予め、微細
化し九竜しン化カドミウムを第鳳族およびJlll族元
素を含む硫酸酸性としたカドミウム・イオン涛液中に添
加後、硫化水素を吹き込み、硫化カド々ウムの沈澱をつ
くることが好適である。
In particular, as the demand for copying using a laser light source began to increase, photoreceptor particles with long wavelengths, 411 and those with sensitivity over 750 to 800 nu due to laser light, became necessary. come. This round K is made by adding micronized Kowloon cadmium phosphide to a sulfuric acid acidified cadmium ion solution containing Group 1 and JIII elements, and then blowing hydrogen sulfide to precipitate the cadmium sulfide. It is preferable to create

第■族、第鳳族元素はそれぞれアク七ブタ−。Group Ⅰ and group phoenix elements are respectively Aku-shichibuta.

ドナー不純物として作用するものであ)、出来上つ九混
晶(i&セレン化カドミウム)の1モルに対して !1
11族を5 X 10−’〜l5xlO−’、第鳳族を
5X10”−’〜21)X10 ’の範囲で添加するの
が好適である。
(acts as a donor impurity), per mole of the resulting mixed crystal (i & cadmium selenide)! 1
It is preferable to add Group 11 in an amount of 5X10-' to 15x1O-' and add Group 11 in an amount of 5X10"-' to 21)X10'.

カドミラムイオン水溶液は、硫酸酸性になっているのが
好ましく、その硫酸濃度は、出来上る粒子O粒径、核と
して添加するセレン化カドミウム量等に依存して決定し
な叶ればならないが、1.5M〜6.OMの範囲の値で
あれば、最終的に生成される、硫セレン化カドミウムの
特性に好適である。
The cadmium ion aqueous solution is preferably acidic with sulfuric acid, and the sulfuric acid concentration must be determined depending on the particle size of the resulting particles, the amount of cadmium selenide added as nuclei, etc. 1.5M~6. A value within the range of OM is suitable for the properties of the cadmium selenide sulfide that is finally produced.

核として、添加するセレン化カドミウム量は、出来上り
え混晶に対して5 mmox・%〜5QmO1e%の組
成となるように添加するのがよい。5%以下の場合は、
セレンを添加する効果が出難く、50%以上となると9
発生するキャリアーの動きが暴くなる。iiセレン化力
ドミクムの形状が粒子が互いに集会し合って形成された
強い凝集体である2次粒子からなっていた秒、そしてこ
の2次粒子が3次元的に!JA合して団塊状であつ九シ
あるいは2次元的に集合して平板状であつ九pすると、
そのような粗大粒子を多数含む硫セレン化カド建りムを
用いて作成される感光体を用いて廖威される画曹はjす
つきがあり、解愉力も不十分となる。そζで、粗大粒子
を含まない硫セレン化カドミウムを製造することが望ま
れるが、そのためO方法の1つとして、焼成条件を工夫
することが挙げられる。即ち、硫化カドミウム、セレン
化カドミクム混合物を、20重量%以上の融剤と共に、
融剤の融点よりも50℃以上高い電鍵で焼成する。
The amount of cadmium selenide added as a nucleus is preferably added so that the composition becomes 5 mmox·% to 5QmO1e% with respect to the finished mixed crystal. If it is less than 5%,
It is difficult to see the effect of adding selenium, and when it exceeds 50%, it becomes 9
The movement of carriers that occurs becomes apparent. ii The shape of the selenizing power domicum was made up of secondary particles, which are strong aggregates formed by particles gathering together, and these secondary particles are three-dimensional! When JA is combined into a block-like shape, or when it is two-dimensionally aggregated and has a flat plate-like shape,
A photoconductor produced using a photoreceptor made of a sulfurized selenide frame containing a large number of such coarse particles has a sluggish feel and has insufficient resolving power. Therefore, it is desired to produce cadmium selenide sulfate that does not contain coarse particles, and one method for this purpose is to devise firing conditions. That is, a mixture of cadmium sulfide and cadmium selenide together with 20% by weight or more of a fluxing agent,
Fire with an electric key that is 50°C or more higher than the melting point of the flux.

使用する融剤は、活性剤をCaS中に拡散する際に一般
的に用いられている融剤で、C60t、 。
The flux used is C60t, which is commonly used when diffusing active agents into CaS.

Zn012. KCl 、 MaOt、 M1140t
、 CdSO4等の1つあるいは数種類を適当な比率に
混合し九40である。
Zn012. KCl, MaOt, M1140t
, CdSO4, etc., in an appropriate ratio.

混合して用いる場合の好適例として、aaoz、とアル
カリ金属の塩化物との混合物が挙げられるアルカリ金属
の塩化物としては、 MaOtとXCZが代表的なもの
である。アルカリ金属の塩化物の融剤全体における含有
量は、90モルラ以下で10モル%以上が好適である。
A preferred example of a mixture used in combination is a mixture of aaoz and an alkali metal chloride. Typical alkali metal chlorides include MaOt and XCZ. The content of the alkali metal chloride in the entire flux is preferably 90 mol or less and 10 mol % or more.

本発明においては、この融剤量は、20%以上、1%に
好ましくは50〜50%が好オしい。
In the present invention, the amount of the flux is preferably 20% or more, 1%, preferably 50-50%.

20%以下では、製造される硫セレン化カドにラム粒子
は焼結して粗大粒子にな)、まえ表向形状も不均一で、
電位保持鱒性が十分でなく、また、解倫性に欠ける暴い
CaSになる。
If it is less than 20%, the ram particles will sinter into the produced sulfur selenide edges and become coarse particles), and the surface shape will be uneven.
It becomes a CaS that does not have sufficient potential retention properties and lacks sexual behavior.

を九、焼成を融剤の融点よりも、50℃高い11&に及
ばないiitで行なつえ場合には、製造される硫セレン
化カドミウム粒子社粒径が大きく、解儂性中塗工性が悪
い。
(9) If the calcination is carried out at a temperature lower than 11°C which is 50°C higher than the melting point of the flux, the produced cadmium selenide sulfate particles will have a large particle size and will have poor decomposition and poor coatability.

なお9本発明O製造方法において、焼成温度は、 6O
O℃以下が好適である。まえ、融剤の混合物に対する添
加量は、収率の点からは65%以下が好適である。
9 In the O manufacturing method of the present invention, the firing temperature is 6O
The temperature is preferably 0°C or lower. From the viewpoint of yield, the amount of flux added to the mixture is preferably 65% or less.

このように焼成され大硫化カド建つムは爽に再焼成を行
う、この再焼成処理によって、感光体く利用されたとき
の形成される画像の静電コントラストが一層安定化する
。再焼成は500℃以下、41には400〜450℃の
温度で行われることが好ましい、411に500℃以上
の焼成温度では感光体中K11lf電荷がWA)やすい
The thus-fired film with large sulfide edges is then re-fired, and this re-firing process further stabilizes the electrostatic contrast of the image formed when it is used as a photoreceptor. It is preferable that the re-firing is carried out at a temperature of 500 DEG C. or lower, and 411, 400 to 450 DEG C.; 411, K11lf charges in the photoreceptor are likely to increase (WA) at a firing temperature of 500 DEG C. or higher.

以下、lI施例によって説明する。This will be explained below using an example.

実施例 1 硫酸インジウム、硫酸銅をそれぞれ10X10 .8X
10−’モル含与硫酸カドミウム4モルを含む2.5M
硫酸酸性溶@10tKセレン化カド建ウム黴粉末1モル
を添加後、65℃のiatで硫化水素を21/−の流量
で50分間吹き込み1反応させた。生成し九沈澱を純水
を用いて十分に洗浄1口過した後200℃で1晩乾燥さ
せた。
Example 1 Indium sulfate and copper sulfate were each mixed at 10×10. 8X
2.5 M containing 4 moles of cadmium sulfate containing 10-' moles
After adding 1 mol of sulfuric acid solution @ 10 tK cadmium selenide mold powder, hydrogen sulfide was blown into the mixture at a flow rate of 21/- for 50 minutes at 65° C. for 1 reaction. The resulting precipitate was thoroughly washed with pure water, passed through one mouth, and then dried at 200° C. overnight.

諌混金物500.9に対して塩化ナトリウム−塩化カド
ミウム混合フラックス(Wool 60重量%、cac
z240 ’31量%)250jl添加、十分に混合し
先後、石英ルツボに充填し、550℃で50分間焼成を
行つ友、該焼成品を十分に洗浄し先後、70℃で1晩乾
燥した。次にこのようにして得られ九硫セレン化カド電
りムを再びルツボに充填し、450℃で1時間再焼成し
え、再憐威後これを水洗、その後イオン交換樹脂によっ
て残貿イオンを除去した後、乾燥し丸、この硫セレン化
カドミウムを塩化ビニル/酢酸ビニル共重合体中に分散
させ死後50μのアルミニウム基板上にaOSの犀さに
塗布t*させて得た感光板に25μ厚のlポリエステル
フィルムをはやつけ三層構成の感光体を得九ところ9表
面が非常に平滑であった。
Sodium chloride-cadmium chloride mixed flux (Wool 60% by weight, cac
z240'31% by weight) was added, thoroughly mixed, and then filled into a quartz crucible and fired at 550°C for 50 minutes.The fired product was thoroughly washed and then dried at 70°C overnight. Next, the thus obtained nine-sulfur selenide cadmium was filled into the crucible again and fired again at 450°C for 1 hour. After removing and drying, this cadmium selenide sulfate was dispersed in a vinyl chloride/vinyl acetate copolymer and coated on an aOS rhinoceros on a post-mortem 50μ aluminum substrate, resulting in a 25μ thick photosensitive plate. A photoreceptor having a three-layer structure was obtained by quickly applying the polyester film, and the surface was extremely smooth.

実施例 2〜4 以下の表のような反応条件で、他線実施例1と同様な方
法により、硫セレン化カドミウムを作成しえ、その後実
施例1と同様な方法によって感光体化し丸。
Examples 2 to 4 Cadmium selenide sulfate was prepared in the same manner as in Example 1 under the reaction conditions shown in the table below, and then made into a photoreceptor in the same manner as in Example 1.

/ 上記各実施例の感光体について、以下の一定を行い、効
果を比較した。
/ Regarding the photoreceptors of each of the above examples, the following constants were performed and the effects were compared.

測定は第1図の測定装置を用い丸。Measurements were made using the measuring device shown in Figure 1.

即ち、感光体9の絶縁層面に透明電極4をもつガラス板
5を押しつけ丸、透明電極4はリレースイッチ5を介し
て高圧直流電源6に接続される。測定は前嶌光としてハ
ロゲンランプ1の白色光をシャッター2によj*o、2
s・C照射し、0.2 sec放置した後、リレースイ
ッチ5を0.2秒間とじて高電圧(Vm)を感光体に印
加し、0.2秒間放置後十分に強い光を0.2秒間照射
後、感光体表面(即ち、絶縁層表1i)Kおける電圧り
りを感光体と同電圧にある金属板7と表面電位計8で一
定した。高電圧印加時における光導電層への印加電圧(
1/dはVa−Va’により算出できるので、vpが6
00vになるVa(以下V、−to・という)を定めて
以下の方法で感度を一定した。即ち。
That is, a glass plate 5 having a transparent electrode 4 is pressed against the insulating layer surface of the photoreceptor 9, and the transparent electrode 4 is connected to a high voltage DC power source 6 via a relay switch 5. In the measurement, white light from halogen lamp 1 is used as front light by shutter 2, j*o, 2.
After irradiating with s・C and leaving it for 0.2 seconds, close the relay switch 5 for 0.2 seconds to apply a high voltage (Vm) to the photoconductor, and after leaving it for 0.2 seconds, apply sufficiently strong light for 0.2 seconds. After the second irradiation, the voltage level K on the surface of the photoreceptor (that is, the insulating layer surface 1i) was kept constant using the metal plate 7 and the surface potentiometer 8, which were at the same voltage as the photoreceptor. Applied voltage to the photoconductive layer when applying high voltage (
1/d can be calculated by Va-Va', so if vp is 6
Va (hereinafter referred to as V, -to) at which the voltage becomes 00V was determined, and the sensitivity was kept constant using the following method. That is.

感光体にV!L−400を印加し友状態で測定光を照射
する。光照射後0.2秒間放置徒、上記と同様に十分、
に強い光を0.2秒間照射して感光体表面における電圧
U)を上記と同様にして一定する。
V on the photoreceptor! Apply L-400 and irradiate measurement light in a friendly state. After irradiating the light, leave it for 0.2 seconds, as above,
is irradiated with strong light for 0.2 seconds, and the voltage U) on the surface of the photoreceptor is kept constant in the same manner as above.

Va−40・印加と同時一定光照射時における光導電層
への印加電圧(Ml)りはVa−aoa−Va′によ)
算出できるから、Vp’ カs o o v Ktkh
6N1km定光の露光量(1m)が半減露光量(1%)
であ如、感光体の感度を表示することができる。
The applied voltage (Ml) to the photoconductive layer when applying Va-40 and simultaneous constant light irradiation is Va-aoa-Va')
Since it can be calculated, Vp' Kas o o v Ktkh
6N1km constant light exposure (1m) is halved (1%)
In this way, the sensitivity of the photoreceptor can be displayed.

こ0j)Kして、800nlllO党を履射し九場合、
半減露光量を求めたところ、以下のような結果が得られ
た。
If you shoot 800nlllO party with K0j)K,
When the half-decrease exposure amount was calculated, the following results were obtained.

2    −850     1.4 5    −920     1.6 4    −840     1.2 なお、Vaを−20007とし丸場舎のマpの値を一定
し丸。この結果から、本実施儒による感光体が長波長側
に一寸分な感度を持つと共に、電荷保持能も十分である
ことが認められえ。
2 -850 1.4 5 -920 1.6 4 -840 1.2 In addition, Va is set to -20007 and the value of Marubasha's map p is constant. From this result, it can be seen that the photoreceptor according to the present invention has a sensitivity of one inch on the long wavelength side and also has a sufficient charge retention ability.

【図面の簡単な説明】[Brief explanation of drawings]

4・・・透明電極 5・・・リレースイッチ 4・・・高圧直流電源 7・・・金属板 8・・・表面電位針 9・・・感光板 出願人 キャノン株式会社 代思人 丸 島 儀 −「゛ 1)。 4...Transparent electrode 5...Relay switch 4...High voltage DC power supply 7...Metal plate 8...Surface potential needle 9...Photosensitive plate Applicant: Canon Co., Ltd. Yoshihito Marushima Gi - “゛ 1).

Claims (1)

【特許請求の範囲】[Claims] t セレン化カドミウムを分散させ九カドミウムイオン
水溶液中に硫化水素を導入してセレン化カドミウムと硫
化カド建りムの渦合物を生成後、腋部合物を焼成するこ
とを特徴とする硫セレン化カドミウム粒子の製造方法。
t Selenium sulfate characterized by dispersing cadmium selenide and introducing hydrogen sulfide into an aqueous solution of nine cadmium ions to generate a mixture of cadmium selenide and cadmium sulfide, and then firing the axillary compound. A method for producing cadmium chloride particles.
JP6686882A 1982-04-21 1982-04-21 Preparation of cadmium selenide sulfide particle Pending JPS58185411A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6686882A JPS58185411A (en) 1982-04-21 1982-04-21 Preparation of cadmium selenide sulfide particle

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6686882A JPS58185411A (en) 1982-04-21 1982-04-21 Preparation of cadmium selenide sulfide particle

Publications (1)

Publication Number Publication Date
JPS58185411A true JPS58185411A (en) 1983-10-29

Family

ID=13328268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6686882A Pending JPS58185411A (en) 1982-04-21 1982-04-21 Preparation of cadmium selenide sulfide particle

Country Status (1)

Country Link
JP (1) JPS58185411A (en)

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