JPS5849618A - Preparation of photoconductive cadmium sulfide - Google Patents
Preparation of photoconductive cadmium sulfideInfo
- Publication number
- JPS5849618A JPS5849618A JP14575081A JP14575081A JPS5849618A JP S5849618 A JPS5849618 A JP S5849618A JP 14575081 A JP14575081 A JP 14575081A JP 14575081 A JP14575081 A JP 14575081A JP S5849618 A JPS5849618 A JP S5849618A
- Authority
- JP
- Japan
- Prior art keywords
- chloride
- cadmium sulfide
- cadmium
- flux
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052980 cadmium sulfide Inorganic materials 0.000 title claims abstract description 59
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 16
- 230000004907 flux Effects 0.000 claims abstract description 14
- 238000002844 melting Methods 0.000 claims abstract description 8
- 230000008018 melting Effects 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 238000010304 firing Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 abstract description 31
- 238000000034 method Methods 0.000 abstract description 19
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 abstract description 14
- 229910052738 indium Inorganic materials 0.000 abstract description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 12
- 230000035945 sensitivity Effects 0.000 abstract description 11
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 abstract description 9
- 239000000203 mixture Substances 0.000 abstract description 7
- 239000007864 aqueous solution Substances 0.000 abstract description 5
- 235000019270 ammonium chloride Nutrition 0.000 abstract description 4
- 238000001354 calcination Methods 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 3
- 239000007787 solid Substances 0.000 abstract description 3
- 150000001768 cations Chemical class 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000009826 distribution Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000009827 uniform distribution Methods 0.000 abstract 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 10
- 229910052801 chlorine Inorganic materials 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 7
- 108091008695 photoreceptors Proteins 0.000 description 7
- 229910052793 cadmium Inorganic materials 0.000 description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 5
- 239000001103 potassium chloride Substances 0.000 description 5
- 235000011164 potassium chloride Nutrition 0.000 description 5
- 239000005749 Copper compound Substances 0.000 description 4
- 229910001514 alkali metal chloride Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 150000001880 copper compounds Chemical class 0.000 description 4
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 3
- -1 CdC42 Chemical class 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 3
- 239000012190 activator Substances 0.000 description 3
- 239000001110 calcium chloride Substances 0.000 description 3
- 235000011148 calcium chloride Nutrition 0.000 description 3
- 229910001628 calcium chloride Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 235000002639 sodium chloride Nutrition 0.000 description 3
- 101100273751 Caenorhabditis elegans cdc-42 gene Proteins 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 description 2
- 239000011362 coarse particle Substances 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000011163 secondary particle Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- 108091006629 SLC13A2 Proteins 0.000 description 1
- 108091006587 SLC13A5 Proteins 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001661 cadmium Chemical class 0.000 description 1
- 229910000331 cadmium sulfate Inorganic materials 0.000 description 1
- 229910000369 cadmium(II) sulfate Inorganic materials 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Photoreceptors In Electrophotography (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、電子写真用硫化カドミウムの製造方法に関す
るもので、特に非常に結晶性が高く、均一、単一で、且
つ長波長に感度tVする硫化カドミウム粒子の製造方法
に関するものでおる。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing cadmium sulfide for electrophotography, and in particular a method for producing cadmium sulfide particles that are extremely crystalline, uniform, single, and sensitive to long wavelengths at tV. It's about.
電子写真感光材料を代弐例として用いられる光導電性硫
化カドミウム(CdS )の製造の最も一般的な方法は
、硫酸カドミウム、塩化カドミウム、などのカドミウム
の水溶性塩に硫、化水素を作用させて硫化カドミウム粒
子の沈澱を得、次いでこの硫化カドミウム粒子に活性剤
管ドーピングするために高温焼成して得るものである。The most common method for producing photoconductive cadmium sulfide (CdS), which is used as an example of an electrophotographic photosensitive material, is to react sulfur or hydrogen chloride with a water-soluble salt of cadmium such as cadmium sulfate or cadmium chloride. The precipitate of cadmium sulfide particles is then obtained by high-temperature firing in order to dope the cadmium sulfide particles with an activator.
即ち、光導電性硫化カドミウムは、硫化カドミウム粒子
に活性剤としてCaCl2 、 CuSO4等また、融
剤としてCdC42,znC62等のハロダン化物を混
入して焼成を行なうことによシ、Cu 、 CL等を硫
化カドミウム中にドープさせ製造するのが一般である。That is, photoconductive cadmium sulfide is produced by mixing cadmium sulfide particles with CaCl2, CuSO4, etc. as an activator, and halide such as CdC42, znC62, etc. as a fluxing agent, and firing the mixture to sulfide Cu, CL, etc. It is generally manufactured by doping cadmium.
しかしながらこのような従来の方法においては、焼成工
程を経て生成されたCdSは、沈澱生成時にCdSの底
面付近に非常に多くの欠陥を有している。However, in such conventional methods, the CdS produced through the calcination process has a large number of defects near the bottom surface of the CdS at the time of precipitate formation.
この表面欠陥は、光キャリアーのトラップ準位となるた
め、CdSの光メモリーを増大し、即ち、光応答速度を
遅くシ、この様なCdS ’に用いて作成される感光体
を高速の複写機に適用すると初期コピーにおける明部と
暗部の静電コントラストが不十分となる。These surface defects become trap levels for photocarriers, increasing the optical memory of CdS, that is, slowing down the optical response speed, and making photoreceptors made using such CdS' difficult to use in high-speed copying machines. If applied to the initial copy, the electrostatic contrast between bright and dark areas will be insufficient.
また、上記の様な方法で製造されたCdSの粒子形状は
、粒子が互いに集合し合って形成された強い凝集体であ
る2次粒子からなっておシ、この2次粒子は3次元的に
集合して団塊状であった夛あるいは2次元的に集合して
平板状であったシ様々であるがその中には大きなものは
10数ミクロンから数10ミクロンに及ぶものがある。In addition, the particle shape of CdS produced by the above method consists of secondary particles, which are strong aggregates formed by aggregation of particles, and these secondary particles are three-dimensional. There are various types of particles, such as those that are aggregated in the shape of a nodule, or those that are two-dimensionally aggregated and are tabular, and some of them are large, ranging in size from 10-odd microns to several tens of microns.
この様な粗大粒子を多数含むCdS ’e用いて作成さ
れる感光体は、その六回状態が劣悪となり、その結果得
られる画像はガサつきが激しく、解像力も不十分となる
。また、さらに絶縁Nを設ける感光体の場合には、絶縁
層のCdS層へのしみ込み等がおこシ、良好な感光体を
得ることが困難となる。A photoreceptor made using CdS'e containing a large number of such coarse particles has a poor six-fold condition, and as a result, the resulting image is extremely rough and has insufficient resolution. Furthermore, in the case of a photoconductor further provided with an insulation N, the insulating layer may seep into the CdS layer, making it difficult to obtain a good photoconductor.
前記欠点については本出願人の発明に係る特願昭56−
10966号明細書に記載されているような方法によっ
て、克服されている。Regarding the above-mentioned drawbacks, the applicant's patent application 1982-
This problem has been overcome by methods such as those described in US Pat. No. 10,966.
しかしながら、最近インテリジェント・コピア−への関
心が高まシ、特にレーザー光源を用いたコピア−への要
求が現われ始めると、感光体粒子としては長波長、特に
レザー光の関係から750〜800nm以上での感度を
有するものが必要となってくる。前記発明における粒子
は、長波長側には感度を有してなく、赤外領域の光に対
しての感度は十分でなく上記目的には使用出来ない。However, as interest in intelligent copiers has recently increased, and in particular there has been a demand for copiers that use laser light sources, photoreceptor particles with long wavelengths, especially 750 to 800 nm or more due to laser light, have become increasingly popular. There is a need for something with a sensitivity of The particles according to the invention have no sensitivity on the long wavelength side, and are insufficiently sensitive to light in the infrared region, so they cannot be used for the above purpose.
本発明は前記発明の特徴を有すると共に、且つ長波長側
への感度を有する硫化カドミウム粒子の製造方法に関す
るものである。The present invention relates to a method for producing cadmium sulfide particles having the features of the above invention and having sensitivity to longer wavelengths.
本発明者等は特開昭52−58542号公報に記載式れ
でいるように電子写真用硫化カドミウムは塩累、インノ
ウムの存在で、長波長に感度を伸ばすことが出来ること
を確認した。しかし、塩素イオンは従来行われていたよ
うに電子写真用として必俄な暗抵抗を持たすために、0
.少N以下の塩酸を含む、カドミウムの水溶液中で沈澱
虫酸した原料硫化カドミウム全使用して本出願人の発明
にがかる万匝特願昭56−10966号)に適用した場
合、焼成段階で融剤の融点よりも50℃以上高い温度で
焼成全行うため、焼成後の粒子中に塩素量が殆んどなく
、そのため長波長側への感度が不十分であることが判明
した。The present inventors have confirmed that the sensitivity of cadmium sulfide for electrophotography can be extended to longer wavelengths due to the presence of salts and innoum, as described in JP-A No. 52-58542. However, since chlorine ions have the necessary dark resistance for electrophotography as conventionally used,
.. When applied to Manso Patent Application No. 10966/1983, which is based on the present applicant's invention, and uses all the raw material cadmium sulfide precipitated in an aqueous solution of cadmium containing hydrochloric acid of low N or less, a flux is added at the firing stage. Because the entire firing process was carried out at a temperature 50°C or more higher than the melting point of the particles, there was almost no chlorine content in the fired particles, which resulted in insufficient sensitivity to long wavelengths.
本発明者等は、この欠点を克服するため、杓−焼成工程
において少量の塩化物を添加して焼成することにより生
成する硫化カドミウム粒子中に塩素全存在させインジウ
ムとの共同作用によって長波長増感がおこなわれること
を見い出した。In order to overcome this drawback, the present inventors added a small amount of chloride in the ladle-firing process and added a small amount of chloride to the cadmium sulfide particles that are generated. I discovered that the feeling is carried out.
本発明の方法はインジウムを含む硫化カドミウムに対し
て20重量%以上の融剤を混ぜて、融剤の融点よりも5
0℃以上高い温度で焼成後、塩化物音訓えて再焼成する
ことを特徴とするものである。The method of the present invention involves mixing 20% by weight or more of a flux with cadmium sulfide containing indium, and
It is characterized by being fired at a temperature higher than 0°C and then re-fired with the addition of chloride.
本発明によシ製造される硫化カドミウムは結晶性が高く
、また、走査型電子顕微鏡による形状観察では粒子が互
いに凝集していない単粒子でありかつその光面が滑らか
になっている。Cadmium sulfide produced according to the present invention has high crystallinity, and when observed using a scanning electron microscope, it is found to be a single particle with no agglomeration of particles, and its optical surface is smooth.
本発明により得られた硫化カドミウム粉体は粒子形状が
均一で力・つ粒径がそろっているため、作成される光導
電層の塗面は、密で平滑なため、非常に良質の画像が得
られると共に長波長、特に800ないし850nmまで
感度が伸びていることがわかった。Since the cadmium sulfide powder obtained by the present invention has a uniform particle shape and uniform particle size, the coated surface of the photoconductive layer created is dense and smooth, resulting in very high quality images. It was found that the sensitivity was extended to long wavelengths, particularly 800 to 850 nm.
本発明で、再焼成時に添加する塩化物としては塩化カド
ミウム、塩化亜鉛、塩化カリ、塩化ナトリウム、塩化ア
ンモニウム等から適宜選択使用されるが、特に、生成さ
れた硫化カドミウム中に不純物カチオンを残さない塩化
カドミウム、塩化ア(5)
ンモニウムが好適である。又、添力ロ量は硫化カドミウ
ムに対してモル比10〜10 で十分、その効果がみら
れる。添加方法は上記塩化物を固体のまま、添加混合し
てもよいし、塩化物を一度水溶液にし、硫化カドミウム
に添加し、均一に攪拌した後、水分を蒸発させる湿式法
でも良好な結果が得られるが、均一に塩化物を硫化カド
ミウムに拡散させるためには湿式法の万がよシ適切な方
法である。In the present invention, the chloride added at the time of recalcination is appropriately selected from cadmium chloride, zinc chloride, potassium chloride, sodium chloride, ammonium chloride, etc., but in particular, impurity cations are not left in the generated cadmium sulfide. Cadmium chloride and ammonium chloride (5) are preferred. Moreover, the effect can be seen when the amount of addition is sufficient at a molar ratio of 10 to 10 to cadmium sulfide. As for the addition method, the above chloride may be added and mixed in its solid state, or a wet method in which the chloride is made into an aqueous solution, added to cadmium sulfide, stirred uniformly, and then evaporated water has yielded good results. However, in order to uniformly diffuse the chloride into the cadmium sulfide, the wet method is by far the most appropriate method.
長波長側に感度を伸はすためには、塩素、インジウムの
共同作用が必要であるがインジウム量は塩素量とのバラ
ンスで決定される。長波長側に感度を持たすための最低
量は生成する硫化カドミウム1モルに対して5 x 1
o−’モル必要であシ最太量は電子写真用としての暗抵
抗が満足される蓋30XIOモルである。In order to extend the sensitivity to the long wavelength side, chlorine and indium must work together, but the amount of indium is determined by the balance with the amount of chlorine. The minimum amount to have sensitivity on the long wavelength side is 5 x 1 per mole of cadmium sulfide produced.
o−' moles are required, and the maximum amount is 30×IO moles, which satisfies the dark resistance for electrophotography.
又、インジウム量を多くシfc、場合は塩素量は少なく
する必要があり逆の場合は塩素′!L′を多くする必要
がある。Also, if the amount of indium is large and the amount of chlorine is small, the amount of chlorine must be reduced, and vice versa. It is necessary to increase L'.
インジウムの添加は、反比・溶液中に添加して共(6)
沈によって硫化カドミウムに含ませることもできるし、
焼成前に硫化カドミウムと混合させても有効に含壕せる
こともできる。Indium can also be added to cadmium sulfide by co-precipitation (6) by adding it to the solution, or
Even if it is mixed with cadmium sulfide before firing, it can also be effectively embedded.
本発明に使用する融剤は、活性剤i CdS中に拡散す
る際に一般的に用いられている融剤で、CaCl2゜Z
nC4,KCl、 NaC2,NHC1、CdSO4等
の1つあ4
るいは数種類を適当な比率に混合したものである。The fluxing agent used in the present invention is a fluxing agent that is generally used when diffusing into the activator i CdS.
It is a mixture of one or more of nC4, KCl, NaC2, NHC1, CdSO4, etc. in an appropriate ratio.
混合して用いる場合の好適例として、CaCl2とアル
カリ金属の塩化物との混合物が挙げられるアルカリ金属
の塩化物としては、NaCtとKClが代衣的なもので
ある。アルカリ金属の塩化物の融剤全体における含有量
は、90モルチ以下で10モル修以上が好適である。A preferred example of a mixture of CaCl2 and an alkali metal chloride is a mixture of CaCl2 and an alkali metal chloride. NaCt and KCl are substitutes for the alkali metal chloride. The content of the alkali metal chloride in the entire flux is preferably 90 moles or less and 10 moles or more.
本発明においては、この融剤量は、20%以上、特に好
ましくは30〜50%が好ましい。20チ以下では、製
造されるCdS粒子は焼結して粗大粒子になシ、また狭
面形状も不均一で、電位保持性が十分でなく、また、解
像性に欠ける悪いCdSになる。また、焼成を融剤の融
点よシも50℃局い温度に及ばない温度で行なった場合
には、製造されるCdS粒子は粒径が太きく、解像性や
塗工性が悪い。In the present invention, the amount of flux is preferably 20% or more, particularly preferably 30 to 50%. If the thickness is less than 20 inches, the CdS particles produced will be sintered into coarse particles, and the shape of the narrow surface will be non-uniform, resulting in poor CdS with insufficient potential retention and poor resolution. Furthermore, if the firing is carried out at a temperature lower than the melting point of the flux, which is 50° C., the CdS particles produced will have a large particle size and poor resolution and coating properties.
々お、本発明の製造方法において、焼成温度は、600
℃以下が好適である。また・融剤のCdSに対する添加
量は、収率の点からは65%以下が好適である。In the manufacturing method of the present invention, the firing temperature is 600°C.
C or lower is suitable. In addition, the amount of flux added to CdS is preferably 65% or less from the viewpoint of yield.
このように焼成された硫化カドミウムは更に、再焼成を
行う。この再焼成処理によって、感光体に利用されたと
きの形成さ1+、る画像の静電コントラストが一層安定
化する。携焼成は500℃以下特には400〜450℃
の温度で行われることが好ましい。特に500℃以上の
焼成温度では感光体中に残留電荷が残シやすい。The thus fired cadmium sulfide is further fired again. This re-baking process further stabilizes the electrostatic contrast of the image formed when used on a photoreceptor. Cell firing is below 500℃, especially 400-450℃
It is preferable to carry out the process at a temperature of . In particular, at a firing temperature of 500° C. or higher, residual charges tend to remain in the photoreceptor.
本発明は更にアクセプターとして鍋音ドーグせしめるが
、銅は予め、カドミウム塩水溶液中に部用して共沈させ
て、(iiit化カドミウム中に含ませることも出来る
し、焼成前、あるいは再焼成前に硫化カドミウムと混合
した後焼成、あるいは再焼成を行うことによシ硫化カド
ミウム中に含ませることも出来る。CdSに添加する銅
化合物としては、銅の塩化物、硫化物、硫酸化物などが
用いられ、特に、塩化銅、硫酸銅が好ましい。The present invention further uses Nabeondogu as an acceptor. Copper can be precipitated in advance in a cadmium salt aqueous solution (can be included in cadmium iiiitide, or can be incorporated into cadmium before firing or re-firing). It can also be incorporated into cadmium sulfide by mixing it with cadmium sulfide and then firing or re-calcining it.As the copper compound added to CdS, copper chloride, sulfide, sulfide, etc. are used. Copper chloride and copper sulfate are particularly preferred.
焼成前、あるいは再焼成前に銅化合物全添加する方法は
銅化合物を固体のまま添加混合してもよいし、銅化合物
が水溶性の場合はこれを一度水溶液にしCdSに添加後
、水分を蒸発させる湿式法のいずれも良好な結果が得ら
れるが、均一性の面では湿式方法がよい。To add all the copper compound before firing or re-firing, you can add and mix the copper compound as a solid, or if the copper compound is water-soluble, make it into an aqueous solution and add it to CdS, then evaporate the water. Although any of the wet methods can give good results, the wet method is better in terms of uniformity.
銅の添加量は塩素量、インジウム量によって最適量が異
なるが硫化カドミウム1モルに対して、1 x ] O
−’から15 X 10−’モル特には3 X 10−
’から10 X 10””’モルが必要である。The optimum amount of copper added differs depending on the amount of chlorine and indium, but it is 1 x ] O for 1 mole of cadmium sulfide.
-' to 15 X 10-' moles, especially 3 X 10-'
'~10 x 10'''' moles are required.
以下実施例によって説明する。This will be explained below using examples.
実施例1
インジウム全硫化カドミウムに対して12X10−4モ
ル含む硫化カドミウム1001 K CuC62をCd
Sに対し、モル比5×10 添加後、さらに、CaCl
2e 20.9とNaC1”it 30 g添加し、よ
く混合した上で、石英ルツかに充填し、530℃で30
分焼成した(なお、CdC42とNaCLの混合融剤の
融(9)
点は、状態図からCdCt2 ・2Na C1の融点の
426℃に相当する)。この様にして得られたCdSの
六万度は100%であり、1万倍の電子顕微鏡写真によ
れば、粒子表面は非常に清らがで、六方晶形特有の形状
を持ち、各粒子は2〜5μの径の単一粒子となっている
のが認められた。Example 1 Cadmium sulfide 1001 K CuC62 containing 12X10-4 mol based on indium total cadmium sulfide
After adding 5×10 molar ratio to S, CaCl
2e 20.9 and 30 g of NaC1"it were added, mixed well, packed in a quartz mold, and heated at 530°C for 30 g.
(The melting point of the mixed flux of CdC42 and NaCL corresponds to 426° C., which is the melting point of CdCt2.2Na C1 from the phase diagram). The temperature of 60,000 degrees for the CdS obtained in this way is 100%, and according to an electron micrograph at a magnification of 10,000 times, the particle surface is very clear and has a unique hexagonal shape, and each particle is Single particles with a diameter of 2 to 5 μm were observed.
次にこのようにして得られたCdSに湿式法にょシ塩化
カドミウムをモル比4 X I F3、加えよく混合し
た後450℃で1時間再焼成した。再焼成後これを水洗
、イオン交換樹脂による残留イオン除去、乾燥した。こ
のCdS”、(塩化ビニル/酢酸ビニル共重合体中に分
散でせた後アルミニウム基板上に40μの浮式に塗布乾
燥させて得た感光板に15μ厚のポリエステルフィルム
をはりっけ三層構成の感光体を得たところ、表面が非常
に平滑であった。Next, wet-method cadmium chloride was added to the CdS thus obtained at a molar ratio of 4 X I F3, and the mixture was thoroughly mixed and then recalcined at 450° C. for 1 hour. After re-baking, it was washed with water, residual ions were removed using an ion exchange resin, and dried. This CdS" was dispersed in a vinyl chloride/vinyl acetate copolymer, then coated on an aluminum substrate in a 40μ floating type and dried. A 15μ thick polyester film was attached to the resulting photosensitive plate to form a three-layer structure. When a photoreceptor was obtained, the surface was extremely smooth.
次にこの感光板について分九%性を測足したところ75
0nmで0.851uxaec、 800nmで141
uxaecs 850nmで3.71uxgecの値が
得られた。Next, I measured the 9% accuracy of this photosensitive plate and found that it was 75.
0.851 uxaec at 0 nm, 141 at 800 nm
A value of 3.71 uxgec was obtained at uxaecs 850 nm.
−万\インジウム、塩素含金まない他は全く同(10)
様の方法で作成された粒子を同様の方法で感光板化し、
感度を測定したところ、750 nmで571uxse
c s 800 nmで10.31ux・secとなり
明らかに本発明の粒子を用いた場合感度が伸びていた。- 10,000 \ Particles created by the same method as in (10) except that they do not contain indium or chlorine are made into a photosensitive plate in the same manner,
When the sensitivity was measured, it was 571uxse at 750 nm.
cs at 800 nm was 10.31 ux·sec, which clearly showed that the sensitivity was increased when the particles of the present invention were used.
実施例2
モル比で、インジウム、銅をそれぞれ30XIO””’
。Example 2 The molar ratio of indium and copper was 30XIO""'
.
10 X 10”−’含む硫化カドミウムに、CdCl
230IとKCl 20.9の混合融剤を混入し、充分
混合後480℃で30分焼成した。Cadmium sulfide containing 10 x 10''-'CdCl
A mixed flux of 230I and KCl 20.9 was mixed, and after thorough mixing, it was fired at 480°C for 30 minutes.
その後、実施例1と同様に再焼成を行ない得られたCd
Sを感光体化して評価したところ、実施例1と同様の良
好の結果を得た。なお、CdCl2とKClの混合融剤
の融点は状態図から、KCdC15の融点390℃に相
当する。Thereafter, re-firing was performed in the same manner as in Example 1, and the obtained Cd
When S was made into a photoreceptor and evaluated, good results similar to those in Example 1 were obtained. Note that, from the phase diagram, the melting point of the mixed flux of CdCl2 and KCl corresponds to the melting point of KCdC15, 390°C.
実施例3
沈澱生成した不純物添加のないCdS生粉1001/
K CuCZ2インジウムをそれぞれ湿式法によりCd
8に対し、モル比3 X 10−’、5 X 10−’
添加後、避らにCdCl2 f 41 f/ −NaC
tf 91/添加し、よく混合した上で石英ルツボに充
填し、500℃で30分焼成した。その後塩化物を塩化
アンモニウムとして実施例1と同様にして再焼成処理を
行なった。この様にして得られたCdSの六万度は、1
00チであシ、電子顕微鏡写真によれば、粒子底面は非
常に滑らかで、六方晶形特有の形状を持ち各粒子は、3
〜5μの径の均一な単一粒子となっているのが認められ
た。得られたCd5t感元体化して評価したところ、実
施例1と同様の良好な結果を得た。Example 3 Precipitated CdS raw powder 1001/without added impurities
K CuCZ2 indium was converted to Cd by wet method.
8, molar ratio 3 X 10-', 5 X 10-'
After addition, CdCl2 f 41 f/ -NaC
tf 91/ was added, mixed well, and filled into a quartz crucible, followed by firing at 500° C. for 30 minutes. Thereafter, recalcination treatment was performed in the same manner as in Example 1, using ammonium chloride instead of chloride. The 60,000 degrees of CdS obtained in this way is 1
According to the electron micrograph, the particle bottom surface is very smooth, and each particle has a hexagonal crystal shape.
It was observed that the particles were uniform single particles with a diameter of ~5μ. When the obtained Cd5t sensitizer was made into a sensitizer and evaluated, good results similar to those of Example 1 were obtained.
Claims (1)
む硫化カドミウムに対して20重量%以上の融剤を混ぜ
、融剤の融点よシも50℃以上高い温度で焼成した後、
塩化物と共に再焼成することを特徴とする光導電性硫化
カドミウムの製造方法。After mixing 20% by weight or more of a flux with cadmium sulfide containing 5 to 30 x 10" moles of sindium per mole, and firing at a temperature 50°C or more higher than the melting point of the flux,
A method for producing photoconductive cadmium sulfide, which comprises recalcining with chloride.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14575081A JPS5849618A (en) | 1981-09-16 | 1981-09-16 | Preparation of photoconductive cadmium sulfide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14575081A JPS5849618A (en) | 1981-09-16 | 1981-09-16 | Preparation of photoconductive cadmium sulfide |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5849618A true JPS5849618A (en) | 1983-03-23 |
Family
ID=15392283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14575081A Pending JPS5849618A (en) | 1981-09-16 | 1981-09-16 | Preparation of photoconductive cadmium sulfide |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5849618A (en) |
-
1981
- 1981-09-16 JP JP14575081A patent/JPS5849618A/en active Pending
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