JPS58182202A - Method of producing thermistor - Google Patents

Method of producing thermistor

Info

Publication number
JPS58182202A
JPS58182202A JP6433682A JP6433682A JPS58182202A JP S58182202 A JPS58182202 A JP S58182202A JP 6433682 A JP6433682 A JP 6433682A JP 6433682 A JP6433682 A JP 6433682A JP S58182202 A JPS58182202 A JP S58182202A
Authority
JP
Japan
Prior art keywords
thermistor
conductive
thin film
holes
ceramic substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6433682A
Other languages
Japanese (ja)
Other versions
JPH0341962B2 (en
Inventor
康 佐々木
守 宮本
村尾 巧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6433682A priority Critical patent/JPS58182202A/en
Publication of JPS58182202A publication Critical patent/JPS58182202A/en
Publication of JPH0341962B2 publication Critical patent/JPH0341962B2/ja
Granted legal-status Critical Current

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  • Thermistors And Varistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は作業性容易にして応答性の優れたサーミスタを
安価に提供しようとするサーミスタの製造法に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a thermistor that is easy to work with and provides a thermistor with excellent responsiveness at a low cost.

従来における薄膜サーミスタの製造は、印刷により電極
が多数設けられたセラミック板上に薄膜サーミスタ層を
蒸着する際に、それぞれの電極の引出電極となる部分に
マスクを使用してサーミスタ層を゛蒸着しないようにし
ている。そして、このように形成されたものを1チツプ
づつ切断して製造するものであった。
In the conventional manufacturing of thin film thermistors, when a thin film thermistor layer is deposited on a ceramic plate on which many electrodes are printed, a mask is used on the part that will become the lead electrode of each electrode, and the thermistor layer is not deposited. That's what I do. The thus formed product was then cut into individual chips.

このような製造によるものは、電極の寸法精度が製品の
特性バラツキに大きく影響するものであった。また、サ
ーミスタ層の蒸着時にマスクを使用するため、生産時の
作業性も悪いといった欠点を有していた。
In products manufactured in this manner, the dimensional accuracy of the electrodes has a large effect on variations in the characteristics of the product. Furthermore, since a mask is used during vapor deposition of the thermistor layer, workability during production is also poor.

本発明は以上のような従来の欠点を除去するサーミスタ
の製造法を提案するものであり、以下その一実施例につ
いて第1図〜第7図と共に説明する。
The present invention proposes a method for manufacturing a thermistor that eliminates the above-mentioned conventional drawbacks, and one embodiment thereof will be described below with reference to FIGS. 1 to 7.

まず、図において1は熱伝導性に優れたアルミナ板等の
セラミック基板で、第1図に示すように多数の穴2が整
列状に開けられている。この基板1の片面に電極材、料
を印刷し、この時に穴2の中にその電極材料が流れ込み
、完全に電極材料が穴2を埋めるようにする。この状態
を第2図に示しており、−上記基板1の片面に設けられ
た導電部3は穴2内に達している。つぎに、上記基板1
のもう一方の而に上記と同じ電極材料を印刷し、第3図
に示すように導電部4を形成する。これにより上記導電
部3.4は多数の穴2を通して電気的に完全な導通状態
となる。ついで、上記基板1の片面の上記導電部3−ヒ
に第4図に示すようにサーミスタ特性を有する材料を蒸
着して薄膜サーミスタ層5を形成し、さらにそのサーミ
ス層5の」ユに」−記と同じかまたは異なる電極材料を
印刷または蒸着して第5図に示すように導電部6を形成
する。
First, in the figure, 1 is a ceramic substrate such as an alumina plate having excellent thermal conductivity, and as shown in FIG. 1, a large number of holes 2 are formed in an array. An electrode material is printed on one side of the substrate 1, and at this time, the electrode material flows into the hole 2 so that the electrode material completely fills the hole 2. This state is shown in FIG. 2, in which - the conductive portion 3 provided on one side of the substrate 1 reaches into the hole 2; Next, the above board 1
The same electrode material as above is printed on the other side to form the conductive part 4 as shown in FIG. As a result, the conductive portion 3.4 becomes completely electrically conductive through the numerous holes 2. Next, as shown in FIG. 4, a thin film thermistor layer 5 is formed by depositing a material having thermistor characteristics on the conductive portion 3-hi on one side of the substrate 1, and further on the ``y'' of the thermistor layer 5. The same or different electrode material as described above is printed or deposited to form the conductive portion 6 as shown in FIG.

その後、多数の穴2によって上記導電部3.4が導通し
ている状態のものを第°6図に示すように切断線7のと
ころで9ノ断じ、穴2の1つでそれぞれ1チツプが導通
している形に切断する。このようにしてサーミスタは製
造されるのであり、第7図に1チツプになった状態のサ
ーミスタを示しでいる。
Thereafter, the conductive parts 3.4 are electrically connected through a large number of holes 2, and as shown in FIG. Cut into a conductive shape. The thermistor is manufactured in this way, and FIG. 7 shows the thermistor in a single-chip state.

このような製造どすることべよって、セラミック基板と
して用いる例えばアルミナ板は薄く熱伝導性に優れてい
るため、応答性の優れたものとなる。ま、た、従来のよ
うにマスクを使用しないため位置合せの作業がなく、作
業上の向−にが図れる。
As a result of this manufacturing process, for example, an alumina plate used as a ceramic substrate is thin and has excellent thermal conductivity, so that it has excellent responsiveness. Furthermore, since a mask is not used as in the conventional method, there is no positioning work, which improves the work efficiency.

以上のように本発明の製造法によれば、熱伝導性に優れ
たセラミック基板の而に薄膜サーミスタ層を形成す不こ
とによって、高品質で組立ての作業性もきわめて優五た
ものとなり、安価にして製、作できるという実用的価値
を有するものである。
As described above, according to the manufacturing method of the present invention, since a thin film thermistor layer is not formed on a ceramic substrate with excellent thermal conductivity, high quality and excellent assembly workability can be achieved at low cost. It has practical value in that it can be manufactured and manufactured using the following methods.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の詳細な説明するだめのセラミック基板
の斜視図、第2図〜第6図は同製造工程順の状態を示す
断面図、第6図は同しく切断工程を示す斜視図、第7図
は同じく切断によりサーミスタが1チツプになった状態
を示す斜視図である。 1・・・・・セラミック基板、  2・・・・・穴、3
・4・・・・・第1、第2の導電部、5o・・・薄膜サ
ーミスタ層、6・・・・・第3の導電部。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 第2図      3 第6図 第7図
FIG. 1 is a perspective view of a ceramic substrate for detailed explanation of the present invention, FIGS. 2 to 6 are cross-sectional views showing the same manufacturing process, and FIG. 6 is a perspective view showing the cutting process. , FIG. 7 is a perspective view showing the thermistor cut into one chip. 1... Ceramic board, 2... Hole, 3
・4...First and second conductive parts, 5o...Thin film thermistor layer, 6...Third conductive part. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 3 Figure 6 Figure 7

Claims (1)

【特許請求の範囲】[Claims] 熱伝導性に優れた複数の穴を有するセラミック基板の両
面にその穴を通して印刷により第1、第2の導電部を設
け、上記セラミック基板の片面の上記導電部上にサーミ
スタ特性を有する材料を蒸着して薄膜サーミスタ層を形
成し、この薄膜サーミスタ層の上に導電材料を蒸着また
は印刷して第3の導電部を設け、その後多数の穴によっ
て」二記第1、第2の導電部が導通している状態のもの
を1ケの穴によって導通している形に切断することを特
徴とするサーミスタの製造法。
First and second conductive parts are provided by printing through the holes on both sides of a ceramic substrate having a plurality of holes with excellent thermal conductivity, and a material having thermistor characteristics is evaporated onto the conductive part on one side of the ceramic substrate. A thin film thermistor layer is formed by forming a thin film thermistor layer, a third conductive part is provided by depositing or printing a conductive material on the thin film thermistor layer, and then a number of holes are used to connect the first and second conductive parts to each other. A method of manufacturing a thermistor, which is characterized by cutting a thermistor into a shape that is conductive through one hole.
JP6433682A 1982-04-16 1982-04-16 Method of producing thermistor Granted JPS58182202A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6433682A JPS58182202A (en) 1982-04-16 1982-04-16 Method of producing thermistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6433682A JPS58182202A (en) 1982-04-16 1982-04-16 Method of producing thermistor

Publications (2)

Publication Number Publication Date
JPS58182202A true JPS58182202A (en) 1983-10-25
JPH0341962B2 JPH0341962B2 (en) 1991-06-25

Family

ID=13255292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6433682A Granted JPS58182202A (en) 1982-04-16 1982-04-16 Method of producing thermistor

Country Status (1)

Country Link
JP (1) JPS58182202A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01171201A (en) * 1987-12-25 1989-07-06 Okazaki Seisakusho:Kk Thin film resistance temperature measuring body and temperature measuring body

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01171201A (en) * 1987-12-25 1989-07-06 Okazaki Seisakusho:Kk Thin film resistance temperature measuring body and temperature measuring body

Also Published As

Publication number Publication date
JPH0341962B2 (en) 1991-06-25

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