JPS58180227A - 複数の反応室を備えた能率的プラズマ処理装置 - Google Patents

複数の反応室を備えた能率的プラズマ処理装置

Info

Publication number
JPS58180227A
JPS58180227A JP57064448A JP6444882A JPS58180227A JP S58180227 A JPS58180227 A JP S58180227A JP 57064448 A JP57064448 A JP 57064448A JP 6444882 A JP6444882 A JP 6444882A JP S58180227 A JPS58180227 A JP S58180227A
Authority
JP
Japan
Prior art keywords
chamber
chambers
reaction
plasma
plasma reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57064448A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6324412B2 (enExample
Inventor
Takehisa Maeno
前野　武久
Toshiaki Tatsuta
利明 立田
Tomoki Ishii
石井　知幾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SAMUKO INTERNATL KENKYUSHO KK
Original Assignee
SAMUKO INTERNATL KENKYUSHO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SAMUKO INTERNATL KENKYUSHO KK filed Critical SAMUKO INTERNATL KENKYUSHO KK
Priority to JP57064448A priority Critical patent/JPS58180227A/ja
Publication of JPS58180227A publication Critical patent/JPS58180227A/ja
Publication of JPS6324412B2 publication Critical patent/JPS6324412B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Silicon Compounds (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP57064448A 1982-04-17 1982-04-17 複数の反応室を備えた能率的プラズマ処理装置 Granted JPS58180227A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57064448A JPS58180227A (ja) 1982-04-17 1982-04-17 複数の反応室を備えた能率的プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57064448A JPS58180227A (ja) 1982-04-17 1982-04-17 複数の反応室を備えた能率的プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS58180227A true JPS58180227A (ja) 1983-10-21
JPS6324412B2 JPS6324412B2 (enExample) 1988-05-20

Family

ID=13258541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57064448A Granted JPS58180227A (ja) 1982-04-17 1982-04-17 複数の反応室を備えた能率的プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS58180227A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116370A (ja) * 1982-12-24 1984-07-05 Toshiba Corp 薄膜形成装置
JPS60211856A (ja) * 1984-03-09 1985-10-24 テーガル・コーポレーション 物品処理方法及びウエハ処理方法
FR2594102A1 (fr) * 1986-02-12 1987-08-14 Stein Heurtey Installation flexible automatisee de traitement thermochimique rapide
EP1097252A4 (en) * 1998-07-10 2004-06-16 Asm Inc Multi-position load lock chamber
WO2006106779A1 (ja) * 2005-03-30 2006-10-12 Matsushita Electric Industrial Co., Ltd. 不純物導入装置及び不純物導入方法
JP2013511823A (ja) * 2009-11-17 2013-04-04 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド ワークピースの注入処理を制御可能に実行する装置および方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116370A (ja) * 1982-12-24 1984-07-05 Toshiba Corp 薄膜形成装置
JPS60211856A (ja) * 1984-03-09 1985-10-24 テーガル・コーポレーション 物品処理方法及びウエハ処理方法
FR2594102A1 (fr) * 1986-02-12 1987-08-14 Stein Heurtey Installation flexible automatisee de traitement thermochimique rapide
EP1097252A4 (en) * 1998-07-10 2004-06-16 Asm Inc Multi-position load lock chamber
WO2006106779A1 (ja) * 2005-03-30 2006-10-12 Matsushita Electric Industrial Co., Ltd. 不純物導入装置及び不純物導入方法
US7622725B2 (en) 2005-03-30 2009-11-24 Panaosnic Corporation Impurity introducing apparatus and impurity introducing method
US7626184B2 (en) 2005-03-30 2009-12-01 Panasonic Corporation Impurity introducing apparatus and impurity introducing method
JP5116466B2 (ja) * 2005-03-30 2013-01-09 パナソニック株式会社 不純物導入装置及び不純物導入方法
JP2013511823A (ja) * 2009-11-17 2013-04-04 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド ワークピースの注入処理を制御可能に実行する装置および方法

Also Published As

Publication number Publication date
JPS6324412B2 (enExample) 1988-05-20

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