JPS58178321A - Electrooptic device - Google Patents

Electrooptic device

Info

Publication number
JPS58178321A
JPS58178321A JP57061436A JP6143682A JPS58178321A JP S58178321 A JPS58178321 A JP S58178321A JP 57061436 A JP57061436 A JP 57061436A JP 6143682 A JP6143682 A JP 6143682A JP S58178321 A JPS58178321 A JP S58178321A
Authority
JP
Japan
Prior art keywords
electrode
defective
picture
switching element
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57061436A
Other languages
Japanese (ja)
Inventor
Riyousuke Araki
荒木 亮「あ」
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP57061436A priority Critical patent/JPS58178321A/en
Publication of JPS58178321A publication Critical patent/JPS58178321A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/13624Active matrix addressed cells having more than one switching element per pixel
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1365Active matrix addressed cells in which the switching element is a two-electrode device

Abstract

PURPOSE:To relieve the spot defect of a display owing to a defective switching element by connecting one switching element to an electrode for displaying each of many picture elements, providing a spare element which is not connected to the electrode. CONSTITUTION:A switching element 11 of the two elements 11, 12 provided to a data wire 10 is connected by means of a wiring 13 to an electrode 14 for displaying each of many picture elements. If the element 11 is defective, the wiring 13 is cut and the spare element 12 is connected to the electrode 14 by means of a wiring 15. The picture element 14 which is the spot defect of a display is thus relieved.

Description

【発明の詳細な説明】 本発明は、スイッチング素子を具備した絵素がマトリク
ス状に配列された電気光学装置に関する本説明中のスイ
ッチング素子とはトランジスタ等のアクティブ素子や金
属−絶縁体−金属(以後、M工Mと略す)素子等の非線
形素子を意味する近年、液晶表示装置の実用化が進み腕
時計、電卓を始めとして多くの分野に応用がなされてい
る。しかし、他の分野、例えば情報端末や個人用小型電
子機器等の表示部への応用を考えた時、表示ユニットの
容積が小さい、低電圧駆動可能、消費電力が少ないなど
という利点にもかかわらず、駆動電圧−コントラスト特
性があまり良くなく、多桁のマトリクス駆動が出来ない
ため表示可能な情報量が少ないという欠点が問題となっ
ていた。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electro-optical device in which picture elements each having a switching element are arranged in a matrix. In recent years, liquid crystal display devices have been put into practical use and are being applied to many fields including wristwatches and calculators. However, when considering applications in other fields, such as display units in information terminals and small personal electronic devices, despite the advantages of display units such as small volume, low voltage drive, and low power consumption, However, since the driving voltage-contrast characteristics are not very good and multi-digit matrix driving is not possible, the amount of information that can be displayed is small.

この液晶表示装置の持つ欠点を解消するための方法とし
てスイッチング素子を用いたマトリクス駆動が考えられ
、特にMOS)ランジスタ、薄膜トランジスタやM工M
素子を組込んだマトリクス表示の研究開発が盛んに行わ
れている。
As a method to eliminate the drawbacks of liquid crystal display devices, matrix driving using switching elements can be considered, especially MOS) transistors, thin film transistors,
Research and development of matrix displays incorporating elements is actively being conducted.

これらのスイッチング素子は、同一基板上にマトリクス
配列され、各スイッチング素子がそれぞれの絵素の駆動
を行っている。したがってスイッチング素子が不良であ
る絵素は点欠陥となるため、これらスイッチング素子は
全て良品でなければならない。
These switching elements are arranged in a matrix on the same substrate, and each switching element drives a respective picture element. Therefore, since a picture element with a defective switching element becomes a point defect, all of these switching elements must be non-defective.

しかしながらスイッチング素子の製造工程中において多
少の欠陥導入は現在のところさけられず点欠陥のない表
示装置を作ることは困難な状態である。ここでMUM構
造の非線形素子を具備した液晶表示装置を例にとること
にする。M工M素子の基本構成は第1図および第2図に
示すようにガラス基板1をTagoB 膜2で被覆し、
Ta薄膜あるいは窒素をドープしたTa薄膜3をスパッ
タリングした後所定の形状にパターニングし表面を陽極
酸化して酸化膜4とする。さらにM i −Orおよび
Au薄膜を蒸着しパターニングして対向電極5とする。
However, it is currently unavoidable to introduce some defects during the manufacturing process of switching elements, and it is difficult to produce display devices without point defects. Here, a liquid crystal display device equipped with a nonlinear element having an MUM structure will be taken as an example. The basic structure of the M element is as shown in Figs. 1 and 2, in which a glass substrate 1 is coated with a TagoB film 2.
After sputtering a Ta thin film or a nitrogen-doped Ta thin film 3, it is patterned into a predetermined shape and the surface is anodized to form an oxide film 4. Further, M i -Or and Au thin films are deposited and patterned to form the counter electrode 5 .

この対向電極5と電気的導通がとれるようにN i −
Or及びAuの透明電極6をつける。表示装置とするた
めには、この透明電極6を第3図に示すようにマトリク
ス状に配置して一絵素とし、第3図におけるリード部7
と直交するような複数のストライブ状透明電極を備えた
対向基板との間に液晶を封入してTNパネルを作る。
Ni −
Transparent electrodes 6 of Or and Au are attached. In order to make a display device, the transparent electrodes 6 are arranged in a matrix as shown in FIG. 3 to form one picture element, and the lead portions 7 in FIG.
A TN panel is made by sealing liquid crystal between the substrate and a counter substrate having a plurality of striped transparent electrodes perpendicular to the substrate.

M工M素子の両端、即ちTaN膜あるいは窒素をドープ
したTa薄膜3とHi  Or / A u薄膜の対向
電極5の間に電圧を印加すると第4図に示すように非線
型な電圧■−電電流時特性得られその関係が、 X=KVexp  (β、/’T )    (1)〔
式中、に、βは係数〕 というPoole −Franker効果を表わす式に
あてはまる。
When a voltage is applied between both ends of the M element, that is, between the TaN film or nitrogen-doped Ta thin film 3 and the opposing electrode 5 of the Hi Or/Au thin film, a non-linear voltage - voltage is generated as shown in Fig. 4. The current characteristics are obtained and the relationship is: X=KVexp (β,/'T) (1) [
where β is a coefficient] This applies to the equation representing the Poole-Franker effect.

このy工M素子と液晶を組合わせた前記TMパネルをダ
イナミック駆動すると、M工M素子の非線型性によって
実際に液晶に印加されるON電圧とOFF電圧の実効値
比が大きくなって、より多桁のダイナミック駆動が可能
になり1/1oo〜1/200デユーテイのダイナミッ
ク駆動が容易に達成できる。
When dynamically driving the TM panel that combines this Y-factor M element and liquid crystal, the effective value ratio of the ON voltage and OFF voltage actually applied to the liquid crystal increases due to the nonlinearity of the M-factor element, and Multi-digit dynamic driving is possible, and dynamic driving of 1/100 to 1/200 duty can be easily achieved.

M工M素子はその構造が非常に簡単であり、さらにはそ
の製造方法も簡単であるが、欠陥の導入はさけられない
。主な欠陥の原因としては、1、フォトエツチングによ
る欠陥 2、T&膜の欠陥(ピンホール等) 五陽極醗化膜の欠陥(ピンホール、膜質不良) 4、ゴミ、ヨゴレが原因となる欠陥 等が有る。
Although the M-engineered M-element has a very simple structure and a simple manufacturing method, the introduction of defects cannot be avoided. The main causes of defects are: 1. Defects caused by photo-etching 2. Defects in the T& film (pinholes, etc.) Defects in the pentaanodic film (pinholes, poor film quality) 4. Defects caused by dust and dirt, etc. There is.

上記欠陥は少なくすることは出来るが、完全になくすこ
とは不可能と考えられる。
Although the above defects can be reduced, it is considered impossible to completely eliminate them.

したがってM工M素子を表示装置に応用するためには、
欠陥の救済を必要とする。
Therefore, in order to apply M technology and M element to display devices,
Defects require redress.

本発明の目的は、スイッチング素子不良による表示装置
の点欠陥を救済ならしめる電気光学装置を提供すること
にある。
SUMMARY OF THE INVENTION An object of the present invention is to provide an electro-optical device that can repair point defects in a display device caused by defective switching elements.

本発明は、電気光学装置の表示部が多数の絵素からなり
、各絵素には少なくとも1つのスイッチング素子が表示
のための電極に接続され、かつ電極に接続されていない
スイッチング素子を同時に有し、電極に接続されたスイ
ッチング素子が不良の場合、不良のスイッチング素子と
電極を切断、もしくは、データ線とスイッチング素子と
の接続を切断し、電極に接続されていないスイッチング
素子(以後、予備素子とする)を電極に接続することに
より、欠陥絵素を救済するものである。
In the present invention, the display section of an electro-optical device is composed of a large number of picture elements, and each picture element has at least one switching element connected to an electrode for display, and also has a switching element not connected to the electrode. However, if the switching element connected to the electrode is defective, disconnect the defective switching element from the electrode, or disconnect the data line from the switching element, and replace the switching element not connected to the electrode (hereinafter referred to as a spare element). The defective picture element is repaired by connecting it to the electrode.

第5図に本発明の概略を示す。第5図(a)は本発明に
よる電気光学装置の1f&素を示す概略図で、データ線
10に2つのスイッチング素子が接続されており、一方
の素子11は配線13により電極14に接続され、他方
の素子12は予備素子として電極14には接続されてい
ない。素子11の電気特性検査もしくは表示検査により
素子11が不良の場合、第5図Cb’)に示すように素
子11と電極14を配IIi!13で切断し、さらに予
備素子12を金属配IIj!15で電極14と接続する
。以上により点欠陥となる絵素を救済することが可能と
f!る。tJ6VACC)は、1子11 トチ−タ+1
110との接続を切断した場合について示しである。
FIG. 5 shows an outline of the present invention. FIG. 5(a) is a schematic diagram showing a 1f& element of an electro-optical device according to the present invention, in which two switching elements are connected to a data line 10, one element 11 is connected to an electrode 14 by a wiring 13, The other element 12 is not connected to the electrode 14 as a spare element. If the element 11 is found to be defective by the electrical characteristic test or display test of the element 11, the element 11 and the electrode 14 are arranged as shown in FIG. 5Cb'). 13, and furthermore, the spare element 12 is metal-plated IIj! It is connected to the electrode 14 at 15. With the above, it is possible to repair picture elements that become point defects.f! Ru. tJ6VACC) is 1 child 11 Tochita +1
110 is disconnected.

配線の切断は集光したレーザー光を照射し配線を部分的
に蒸発させることにより切断可能である。切断の別の方
法としては、基板上にポジ型の7オトレジストを塗布し
、切断すべき所に集光した紫外線レーザーを照射してレ
ジストを感光し、現像して所定の所のレジストを除失し
、以後通常のフォトエツチング法により切断が可能とな
る。
The wiring can be cut by irradiating the wiring with a focused laser beam to partially evaporate the wiring. Another cutting method is to apply a positive type 7 photoresist on the substrate, irradiate the area to be cut with a focused ultraviolet laser to expose the resist, and develop it to remove the resist at the designated area. After that, cutting can be performed using a normal photoetching method.

また接続は、ガラス上に形成された金属膜を接続すべき
所定の位置に接触もしくは数μ愼のギャップでセットし
、ガラス上方から集光レーザーを金属膜に照射すること
により金属を蒸発させ、所定の位置に金属を蒸着させる
ことにより所定の位置を接続可能となる。また別の方法
としては、基板上にさらに金属膜を形成し、ネガ型の7
オトレジストを塗布して、接続すべき所定の位置に集光
した紫外線を照射してレジストを感光し、現像して所定
の所のレジストを残し他は除去し、以後通常のフォトエ
ツチング法により金属による接続が可能となる。
In addition, the connection is made by setting the metal film formed on the glass at the predetermined position to be connected, either in contact or with a gap of several μm, and by irradiating the metal film with a focused laser from above the glass, the metal is evaporated. By vapor depositing metal at predetermined positions, it becomes possible to connect the predetermined positions. Another method is to further form a metal film on the substrate and use a negative type 7
Apply photoresist, expose the resist by irradiating it with concentrated ultraviolet rays at the predetermined locations to be connected, develop it, leave the resist in the predetermined locations, and remove the rest.After that, the metal is etched using the normal photoetching method. Connection is now possible.

〈実施例〉 液晶表示装置に非lIl形素子であるMIM素子を応用
した電気光学装置の例を第6図に示す。
<Example> FIG. 6 shows an example of an electro-optical device in which an MIM element, which is a non-IIl type element, is applied to a liquid crystal display device.

データ112oにM工M素子21が接続され、M工M素
子21はさらに電極23に接続されている。また予備の
M工M素子22は2つの絵素に対して1個の割合で組込
まれており、予備のM工M素子22は、他のM°工M素
子21と共通のデータ線に接続されている一方、電極2
3には接続されていない(第6図(α))。以上のよう
な構造にすることにより、絵素に接続されたM工M素子
21のうち一方が欠陥素子であった場合、予備素子を使
って欠陥絵素となるのを防ぐことが出来る。この修正を
第6図Ch)に示す。まず欠陥素子21とデータ線の接
続をレーザー光により切断する。
The M element 21 is connected to the data 112o, and the M element 21 is further connected to the electrode 23. Also, one spare M element 22 is incorporated for every two picture elements, and the spare M element 22 is connected to a common data line with other M elements 21. On the other hand, electrode 2
3 (Fig. 6 (α)). With the above structure, if one of the M elements 21 connected to a picture element is defective, the spare element can be used to prevent it from becoming a defective picture element. This modification is shown in Figure 6 Ch). First, the connection between the defective element 21 and the data line is cut using a laser beam.

24・・・切断部。電極23と素子21の接続を切断し
てもよい。次に予備素子22と電極23を接続する。こ
の接続はAu等の金属膜がその上に形成されたガラスを
M工M素子が形成されている基板上にのせ、集光レーザ
ー光を金属膜上に照射し、局所的に金属を蒸発させ、輩
工M素子側の基板上に蒸着させる方法により行える。第
7図はレーザー光による接続方法を示した概略図で、第
7図(α)は、金属膜33を形成したガラス基板31を
素子基板32にセットした所を示し、#!7図(b)は
レーザー光照射により金属を蒸発させ導体34と導体3
5の接続を行った所を示す。36・・・蒸着された金属
、37・・・レーザー光。
24... Cutting part. The connection between the electrode 23 and the element 21 may be cut. Next, the preliminary element 22 and the electrode 23 are connected. For this connection, a glass on which a metal film such as Au is formed is placed on a substrate on which an M element is formed, and a focused laser beam is irradiated onto the metal film to locally evaporate the metal. This can be done by vapor deposition on the substrate on the M element side. FIG. 7 is a schematic diagram showing a connection method using laser light, and FIG. 7 (α) shows the glass substrate 31 on which the metal film 33 is formed is set on the element substrate 32, and #! Figure 7(b) shows conductor 34 and conductor 3 by vaporizing metal by laser beam irradiation.
This shows where the connections in step 5 were made. 36...Deposited metal, 37...Laser light.

以上従来さけることが出来なかりた欠陥絵素を本発明に
より欠陥絵素の修正が可能となり、電気光学装置の歩留
り向上がはかれる。
As described above, the present invention makes it possible to correct defective picture elements that could not be avoided in the past, thereby improving the yield of electro-optical devices.

【図面の簡単な説明】 第1図及び第2図は従来のM工M素子の構成を示す断面
図と平面図である。 第3図は従来のMIM素子を具備した表示装置の一部を
示す。 第4図はV工M素子の電圧−電流特性を示す。 第5図(α)、(h)、(c)は、本発明による表示装
置の説門図である。 第6図(α’) t ()は、本発明をM工M素子を具
備した表示装置に応用したものを示す。 第7図(α)I Cb)は、導通接続の方法を示す断面
図である。 以上 出願人 株式会社諏訪精工舎 第1図 第3図 14 第6図 [でmジ (幻 (しン 第7図
BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 and 2 are a cross-sectional view and a plan view showing the structure of a conventional M element. FIG. 3 shows part of a display device equipped with a conventional MIM element. FIG. 4 shows the voltage-current characteristics of the V-type M element. FIGS. 5(α), (h), and (c) are introductory diagrams of the display device according to the present invention. FIG. 6(α')t() shows an application of the present invention to a display device equipped with an M element. FIG. 7(α)I Cb) is a sectional view showing a method of conductive connection. Applicant Suwa Seikosha Co., Ltd. Figure 1 Figure 3 Figure 14 Figure 6

Claims (1)

【特許請求の範囲】 1、 絵素がマトリクス状に配列され、1つの絵素に対
し少なくとも1つのスイッチング素子が各絵素を構成す
る電極に接続されている電気光学装置において、絵素を
構成する電極に接続されていないスイッチング素子が、
1つの絵素に対し少なくとも1つ具備されていることを
特徴とする電気光学装置。 λ 絵素がマトリクス状に配列され、1つの絵素に対し
少なくとも1つのスイッチング素子が各絵素を構成する
電極に接続されている電気光学装置において、絵素を構
成する電極に接続されていないスイッチング素子が、2
つの絵素に対し1つ具備されていることを特徴とする電
気光学装置。
[Claims] 1. In an electro-optical device in which picture elements are arranged in a matrix and at least one switching element for each picture element is connected to an electrode constituting each picture element, The switching element that is not connected to the electrode that
An electro-optical device characterized in that at least one electro-optical device is provided for one picture element. λ In an electro-optical device in which picture elements are arranged in a matrix and at least one switching element for each picture element is connected to the electrodes that make up each picture element, it is not connected to the electrodes that make up the picture element. The switching element is 2
An electro-optical device characterized in that one electro-optical device is provided for each picture element.
JP57061436A 1982-04-13 1982-04-13 Electrooptic device Pending JPS58178321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57061436A JPS58178321A (en) 1982-04-13 1982-04-13 Electrooptic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57061436A JPS58178321A (en) 1982-04-13 1982-04-13 Electrooptic device

Publications (1)

Publication Number Publication Date
JPS58178321A true JPS58178321A (en) 1983-10-19

Family

ID=13171010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57061436A Pending JPS58178321A (en) 1982-04-13 1982-04-13 Electrooptic device

Country Status (1)

Country Link
JP (1) JPS58178321A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2571913A1 (en) * 1984-10-17 1986-04-18 Richard Joseph ACTIVE MATRIX DISPLAY WITH DOUBLE ADDRESSING TRANSISTOR
JPS6292994A (en) * 1985-10-18 1987-04-28 三洋電機株式会社 Display defect correction for display unit
JPS63272046A (en) * 1987-04-21 1988-11-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Method of testing display device and display device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2571913A1 (en) * 1984-10-17 1986-04-18 Richard Joseph ACTIVE MATRIX DISPLAY WITH DOUBLE ADDRESSING TRANSISTOR
JPS6292994A (en) * 1985-10-18 1987-04-28 三洋電機株式会社 Display defect correction for display unit
JPS63272046A (en) * 1987-04-21 1988-11-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Method of testing display device and display device

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