JPS58177487A - Method and device for diaphragm electroplating - Google Patents

Method and device for diaphragm electroplating

Info

Publication number
JPS58177487A
JPS58177487A JP5905982A JP5905982A JPS58177487A JP S58177487 A JPS58177487 A JP S58177487A JP 5905982 A JP5905982 A JP 5905982A JP 5905982 A JP5905982 A JP 5905982A JP S58177487 A JPS58177487 A JP S58177487A
Authority
JP
Japan
Prior art keywords
diaphragm
anode
anode chamber
plating
anolyte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5905982A
Other languages
Japanese (ja)
Other versions
JPH0118998B2 (en
Inventor
Nobukazu Suzuki
鈴木 信和
Atsuyoshi Shibuya
渋谷 敦義
Yuji Terada
寺田 雄二
Takashi Deo
隆志 出尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Tokuyama Corp
Original Assignee
Sumitomo Metal Industries Ltd
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd, Tokuyama Corp filed Critical Sumitomo Metal Industries Ltd
Priority to JP5905982A priority Critical patent/JPS58177487A/en
Publication of JPS58177487A publication Critical patent/JPS58177487A/en
Publication of JPH0118998B2 publication Critical patent/JPH0118998B2/ja
Granted legal-status Critical Current

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  • Electroplating Methods And Accessories (AREA)

Abstract

PURPOSE:To prevent the deterioration in performance and damage owing to swelling, burn, etc. of an anion exchange membrane diaphragm and to increase the high current density of plating in the stage of plating a metal to be plated with the insoluble anode in the anode chamber separated with said diaphragm, by bringing the liquid in the anode chamber into contact with the diaphragm after cooling the same in a circulation system. CONSTITUTION:An insoluble porous anode 8 is provided in an anode chamber 2 which is separated with an anion exchange membrane diaphragm 3 from the plating bath of an aq. soln. 1 contg., for example, sulfate of a plating metal, and a steel plate 4 to be plated is electrified to negative charge and is plated. Here, a space 9 is formed behind the anode 8 in the chamber 2 so that an anolyte, for example, an aq. Na2SO4 soln. circulates therein. The gaseous O2 generated on the surface of the anode 8 is removed with a gas venting device 10 of the circulation system to prevent interpole electrode. The anolyte removed of the gas is stored in a tank 11, whereafter the anolyte is cooled in a heat exchanger 13, and is recirculated to the chamber 2. While the cooled anolyte passes between the membrane 3 and the anode 8, the anolyte is deprived of the Joule heat generated in the membrane 3 so that the membrane 3 is cooled at all times.

Description

【発明の詳細な説明】 本発明は隔膜電解メッキ方法および装置に関する。[Detailed description of the invention] The present invention relates to a diaphragm electrolytic plating method and apparatus.

隔膜電解メッキは、たとえば特公昭51−2900号に
記載さ扛ているように、電解メッキにおいて不溶性陽極
全使用し、メッキ金属を金属の硫酸塩あるいは塩化物等
の形で供給する場合に、金属イオンはメッキにより糸外
に取り出さ扛るのに対し804 ・・あるいはC1−等
の陰イオン−はメッキ浴中に蓄積してメッキ浴のpH’
に下げてしまうので、こn金メツキ浴系外へ取り出すた
めに陰イオン交換膜全隔膜として使用し、メッキ浴と分
離して陽極室全形成して電解メッキ全行う方法である。
Diaphragm electrolytic plating, as described in Japanese Patent Publication No. 51-2900, uses an insoluble anode in electrolytic plating and supplies the plating metal in the form of metal sulfate or chloride. While ions are taken out of the yarn by plating, anions such as 804... or C1- accumulate in the plating bath and increase the pH of the plating bath.
Therefore, in order to take the gold out of the gold plating bath system, an anion exchange membrane is used as a complete diaphragm, and the entire anode chamber is formed in a separate manner from the plating bath, and all electrolytic plating is performed.

陽極室液としては通常電解質を含む溶液が使用さn、た
とえばメッキ金属?硫酸塩の形で補給する場合には、H
2SO4またはNa2SO4が使用さnる。
A solution containing an electrolyte is usually used as the anode chamber solution, for example, plated metal? When supplemented in the form of sulfate, H
2SO4 or Na2SO4 is used.

イオン交換膜は、一般に、スチレンおよびジビニルベン
ゼンにポリ塩化ビニル等の高分子微粉末を混合し、こn
を布に塗布した後加熱重合して膜状となし、その後交換
基金導入する方法、あるいは、スチレン藁ブタジェンの
ラテックスに布を浸漬し、乾燥後交換基を導入する方法
等により製造さnる。このため、イオン交換膜の耐熱性
は、使用さnる高分子材料の耐熱性に依存し、一般には
、60℃が耐熱の限界である1〕イオン交換膜?上記し
た隔膜電解メッキに用いる場合には、隔膜は抵抗体であ
るためにメ。
Ion exchange membranes are generally made by mixing styrene and divinylbenzene with fine polymer powder such as polyvinyl chloride.
It can be produced by applying it to a cloth, heating it and polymerizing it to form a film, and then introducing an exchange group, or by dipping the cloth in styrene straw butadiene latex, drying it, and then introducing an exchange group. For this reason, the heat resistance of an ion exchange membrane depends on the heat resistance of the polymer material used, and generally the limit of heat resistance is 60°C.1] Ion exchange membrane? When used in the above-mentioned diaphragm electrolytic plating, the diaphragm is a resistor, so it is difficult to use.

キ電流によりジュール熱が発生し、発熱現象を生じる。Joule heat is generated by the electric current, causing a heat generation phenomenon.

このためイオン交換膜の耐熱性が問題となる。特に、高
電流密度でメッキを行うことはメッキ効率の点で望まし
く、かつ実際に工業的にメッキを行う上で必要ではある
が、高電流密度であnばある程隔膜の発熱量が大きくな
り、隔膜の膨潤あるいは熱焼は等深刻な問題を招来する
。実際に、メッキ浴温か60℃で、かつ40A/ d 
m以上の高電流密度でメッキを行う場合には、焼けによ
り隔膜は損傷さnてしまう。したがって、隔膜の発熱問
題を解決しない限り、イオン交換膜隔膜を用いて高効率
の電解メッキ全実施することは不可能である。なお、隔
膜Til用する食塩電解等の技術においても、実用化さ
扛ている最高電流密度は約30A/dm”程度である0
そこで、本発明の目的は、隔膜を冷却することにより、
隔膜の膨潤、焼は等による性能劣化又は損傷全防止し、
電解メッキの高電流密度化を図ることができる隔膜電解
メッキ方法および装置を提供することにちる0 上記目的を達成するために、本発明の発明者らが隔膜を
冷却する手段につき種々研究全行ったところ、まず、メ
ッキ浴の温度金工げて隔膜の冷却を行う方法は、メッキ
浴の電気伝導度が温度と正比例関係に6るため、メッキ
浴の温度を下げるとメッキ浴の電気伝導度を下げること
になり、電力効率面で不利となり、さらにメッキ皮膜に
むら発生じる等の問題があることが判明した。ところが
、一方、陽極室液?用いて隔膜?冷却する方法は、陽極
室液は通常高濃度の酸(たとえば0.5〜3NH2SO
4)が使用さ扛ているため電気伝導度は、メッキ浴が通
常50℃floom’−’/  f6る(D4C対し、
て、50℃で150〜500 m07cmと高い。従っ
て、20℃程度まで陽極室液の温度を下げても100 
mc5/c11L以下とならず電力効率面であまり不利
になることはなく、隔膜全有効に冷却することができる
こと全知見した。
Therefore, the heat resistance of the ion exchange membrane becomes a problem. In particular, plating at a high current density is desirable in terms of plating efficiency and is necessary for actual industrial plating, but the higher the current density, the greater the amount of heat generated by the diaphragm. , swelling or thermal burning of the diaphragm can lead to serious problems. Actually, the plating bath temperature was 60℃ and 40A/d.
If plating is carried out at a high current density of more than m, the diaphragm will be damaged due to burning. Therefore, unless the heat generation problem of the diaphragm is solved, it is impossible to perform highly efficient electrolytic plating using an ion exchange membrane diaphragm. In addition, even in technologies such as salt electrolysis for diaphragm Til, the maximum current density that has not been put into practical use is approximately 30 A/dm.
Therefore, the purpose of the present invention is to cool the diaphragm so as to
Completely prevents performance deterioration or damage due to diaphragm swelling, burning, etc.
An object of the present invention is to provide a diaphragm electrolytic plating method and apparatus capable of increasing the current density of electrolytic plating. In order to achieve the above object, the inventors of the present invention have conducted various studies on means for cooling diaphragms. First, in the method of cooling the diaphragm by heating the plating bath, the electrical conductivity of the plating bath is directly proportional to the temperature, so lowering the temperature of the plating bath lowers the electrical conductivity of the plating bath. It was found that this resulted in a disadvantage in terms of power efficiency and caused problems such as unevenness in the plating film. However, on the other hand, what about the anode chamber liquid? Using a diaphragm? The cooling method is that the anode chamber solution is usually a highly concentrated acid (e.g. 0.5-3NH2SO
4) Since the plating bath is usually used at 50°C, the electrical conductivity is
The height is as high as 150-500 m07cm at 50℃. Therefore, even if the temperature of the anode chamber liquid is lowered to about 20℃,
It has been found that the entire diaphragm can be effectively cooled without being less than mc5/c11L, and there is no disadvantage in terms of power efficiency.

すなわち、本発明は、陰イオン交換膜隔膜番・ζよりメ
ッキ浴室から分離形成さ扛た陽極室4コに不溶性陽極全
設置した隔膜電解槽でメッキする際、陽極室液の循環系
に熱交換器を設けて陽極室液を冷却し、冷却さ扛た陽極
室i’al−陰イオン交換膜隔膜と接触させて該隔膜を
冷却すること全特徴とするものである。
That is, in the present invention, when plating in a diaphragm electrolytic tank in which insoluble anodes are all installed in four anode chambers separated from the plating bath by anion exchange membrane diaphragm number ζ, heat exchange is performed in the circulation system of the anode chamber liquid. The present invention is characterized in that a container is provided to cool the anode chamber liquid, and the anode chamber liquid is brought into contact with the cooled anode chamber i'al-anion exchange membrane diaphragm to cool the diaphragm.

次に、本発明を添付の図面に基いて説明する。。Next, the present invention will be explained based on the accompanying drawings. .

第1図は本発明方法全実施する電解メッキ装置の概要?
示すものである。第1図において、■はメッキすべき金
属の塩、一般的にはメッキすべき金属の硫酸塩?含む水
溶液を満すメッキ浴室、2はメッキ浴室1内に陰イオン
交換膜隔膜3により分離形成さ′nた陽極室であるo4
は〜通電ロール5によりeに帯電さnた後メッキ浴室1
内に導かnメ、キ浴室1内でメッキ処理を受ける被メツ
キ材料たとえば帯状鋼板であるO鋼板4はメッキ処理後
通電ロール6によりメッキ浴室外へ導き出さ扛次工程に
供給さnる。7はメッキ浴室1内にあって鋼板40案内
をするジンクロールである。上記構成において、陽極室
2は鋼板4の進行方向に沿って延在する形状に形成さn
1陰イオン交換膜隔膜3が鋼板4に対向する位置に設け
らnている0陽極室2にはさらに不溶性多孔質陽極、た
とえば、Ti−Ptメッキを施したエキスノくンドメタ
ルよりなる不溶性陽極8(第2図)が設けら扛ており、
この陽極の背後には空間部9が形成さnて陽極室液が循
環するようになっている。陽極室液としては電解質?含
む溶液、たとえばメッキ浴として金属の硫酸塩水溶液を
使用する場合には、H2SO4水溶液あるいはNazS
O4水溶液、特に、0.5〜3N程度の高濃度のH2S
 04水溶液が好適に使用さ几る0 10は、陽極室液のガス抜き金行うガス抜き装置である
0不溶性陽極8の表面では、水の電解(2H20”4H
++4e+Oz↑)により02ガスが発生する。この0
2ガス全放置しておくと、極間室圧が上昇して好ましく
ない。このため、陽極室2から陽極室液全抜き出してガ
ス抜き処理ケ行った後、陽極室2へ再循環できるよう設
けらnているollは陽極室液タンクで、ガス抜き装置
10によりガス抜きさ几た陽極室液を貯えておくために
設けらnlこのタンク11内の陽極室液はポンプ12に
より陽極室2へ再循環さnる。13は、この陽極室液の
循環系内に設けらnる熱交換器である。
Figure 1 shows an outline of an electrolytic plating apparatus that implements the entire method of the present invention.
It shows. In Figure 1, ■ is a salt of the metal to be plated, generally a sulfate of the metal to be plated? 2 is an anode chamber separated by an anion exchange membrane diaphragm 3 in the plating bath 1;
After being charged to e by the energizing roll 5, the plating bath 1
After the plating process, the material to be plated, such as an O-steel plate 4, which is a band-shaped steel plate, is led out of the plating bath by an energized roll 6 and supplied to the next step. Reference numeral 7 denotes a zinc roll located in the plating bath 1 for guiding the steel plate 40. In the above configuration, the anode chamber 2 is formed in a shape extending along the traveling direction of the steel plate 4.
1 An anion exchange membrane diaphragm 3 is provided at a position facing the steel plate 4. The anode chamber 2 further includes an insoluble porous anode, for example, an insoluble anode 8 made of Ti-Pt plated xeno-kunded metal. (Fig. 2) is provided,
A space 9 is formed behind the anode through which the anode chamber liquid circulates. Is the anode chamber fluid an electrolyte? For example, when using a metal sulfate aqueous solution as a plating bath, a H2SO4 aqueous solution or a NazS
O4 aqueous solution, especially H2S at a high concentration of about 0.5 to 3N
04 An aqueous solution is preferably used. 0 10 is a degassing device for degassing the anode chamber liquid. 0 On the surface of the insoluble anode 8, water electrolysis (2H20"4H
02 gas is generated by ++4e+Oz↑). This 0
If the two gases are left alone, the pressure in the interelectrode chamber will increase, which is undesirable. Therefore, after all the anode chamber liquid has been extracted from the anode chamber 2 and gas degassing processing has been performed, the oll that is installed so that it can be recirculated to the anode chamber 2 is an anode chamber liquid tank, which is degassed by the gas degassing device 10. The anode chamber liquid in the tank 11, which is provided to store the purified anode chamber liquid, is recirculated to the anode chamber 2 by a pump 12. Reference numeral 13 denotes a heat exchanger provided within the circulation system of this anode chamber liquid.

いま、上記のような構成において陽極室液を循環させる
と、陽極室液はガス抜き装置10により02ガスが除去
さnた後、陽極室液タンク11に貯えらn、その後熱交
換器13により冷却さ扛て陽極室2に再循環さnる。こ
の冷却さnた陽極室液は、陽極室2において、陰イオン
交換膜隔膜3と不溶性陽極8との間隙全通過する際に、
隔膜3で発生したジュール熱金奪い、隔膜3を冷却する
。この時、陽極室液はたえず循環さnているので、隔膜
3は冷却さnた陽極室液により有効に冷却さ几る0  
       ゛冷却さnた陽極室液 の温度としては、隔膜3の熱による劣化を防ぐことがで
き、しかも、電気伝導度の低下を許容範囲内にとどめて
おける温度が選ばルる〇一般に、隔膜3の熱による劣化
を防ぐためには、陽極室液全50℃以下とすることが有
効である。
Now, when the anode chamber liquid is circulated in the above configuration, after the 02 gas is removed from the anode chamber liquid by the degassing device 10, it is stored in the anode chamber liquid tank 11, and then it is removed by the heat exchanger 13. It is cooled and recycled to the anode chamber 2. When this cooled anode chamber liquid passes through the entire gap between the anion exchange membrane diaphragm 3 and the insoluble anode 8 in the anode chamber 2,
The Joule heat generated in the diaphragm 3 is taken away and the diaphragm 3 is cooled. At this time, since the anode chamber liquid is constantly circulated, the diaphragm 3 is effectively cooled by the cooled anode chamber liquid.
゛The temperature of the cooled anode chamber liquid is selected to be a temperature that can prevent deterioration of the diaphragm 3 due to heat and also keep the decrease in electrical conductivity within an allowable range゛In general, the temperature of the diaphragm 3 In order to prevent deterioration due to heat, it is effective to keep the total temperature of the anode chamber liquid below 50°C.

一方、電気伝導度の面からは、陽極室液の温度は20℃
以上であることが好ましい。したかつ度に冷却すること
が好゛ましい。
On the other hand, from the standpoint of electrical conductivity, the temperature of the anode chamber liquid is 20°C.
It is preferable that it is above. It is preferable to cool the mixture at a constant temperature.

次に、本発明の効果を実験例により示す。Next, the effects of the present invention will be illustrated by experimental examples.

第1図に示す隔膜電解メッキ装置を使用し、メッキ浴と
してFe=Zn合金メ、キ浴(FeSO4・7H202
50g/l、 ZnS04150.!i’/l、Naz
SO4100,9/IA’。
The diaphragm electrolytic plating apparatus shown in Fig. 1 was used, and the plating bath was a Fe=Zn alloy metal bath (FeSO4・7H202
50g/l, ZnS04150. ! i'/l, Naz
SO4100,9/IA'.

pH=2)を、陽極室液として2.0 NH2S04を
用いて、メッキ浴温度、H2SO4温度全種々変化させ
てメッキを行い、隔膜の状態を調査した。
Using 2.0 NH2S04 as the anode chamber solution and varying the plating bath temperature and H2SO4 temperature, plating was performed and the state of the diaphragm was investigated.

なお、隔膜としては徳山ソーダ製Neosepta A
Cト45Tを用いた。
The diaphragm is Neosepta A manufactured by Tokuyama Soda.
C-45T was used.

メッキ浴温度、H2SO4温度、電流密度および)h 
S 04流速とメッキ皮膜および隔膜の状態との関係を
第1表に示す。
Plating bath temperature, H2SO4 temperature, current density and )h
Table 1 shows the relationship between the S04 flow rate and the condition of the plating film and diaphragm.

なお、H2SO4流速(V)は、電流密度が60A/d
m”の場合に、v=3cm/secでは、極間電圧の上
昇が認めらnたが、■=5CrIL/SeC以上では電
圧上昇がないことから、十分にガス抜き効果があったこ
とが確認さnた〇 第  1  表
Note that the H2SO4 flow rate (V) has a current density of 60A/d.
m", an increase in interelectrode voltage was observed when v = 3 cm/sec, but no voltage increase was observed at ■ = 5 CrIL/SeC or higher, confirming that there was a sufficient degassing effect. San〇Table 1

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明?実施する隔膜電解メッキ装置の一例を
示す概要図、第2図は陽険室?示す概要図である。 1・・メッキ浴室    2・・陽極室3・・隔膜  
     4・・被メッキ材(鋼板)8・・不溶性陽極
    10・・ガス抜き装置11・・陽極室液タンク
  13・・熱交換器第1図 ) 490− 第2悶
Is Figure 1 the invention? A schematic diagram showing an example of the diaphragm electrolytic plating equipment used, Figure 2 is the positive room? FIG. 1. Plating bathroom 2. Anode chamber 3. Diaphragm
4. Material to be plated (steel plate) 8. Insoluble anode 10. Gas venting device 11. Anode chamber liquid tank 13. Heat exchanger (Fig. 1) 490- Second agony

Claims (1)

【特許請求の範囲】[Claims] (1)陰イオン交換膜隔膜によりメッキ浴室から分離形
成さnた陽極室中に不溶性陽極を設置した隔膜電解槽で
メッキする際、陽極室液の循環系に熱交換器を設けて陽
極室液を冷却し、冷却さnた陽極室it陰イオン交換膜
隔膜と接触させて該隔膜全冷却することを特徴とす形成
さn1不溶性陽極をその中に収容する陽極室全メッキ浴
室内に設け、陽極室液のガス抜き装置と熱交換器とを陽
極室液の循環系に設けたことを特徴とする隔膜電解メッ
キ装置0
(1) When plating in a diaphragm electrolytic tank in which an insoluble anode is installed in an anode chamber separated from the plating bath by an anion exchange membrane diaphragm, a heat exchanger is installed in the circulation system of the anode chamber liquid. an anode chamber containing an insoluble anode formed therein, characterized in that the cooled anode chamber is brought into contact with an anion exchange membrane diaphragm to completely cool the diaphragm; A diaphragm electrolytic plating apparatus 0 characterized in that an anode chamber liquid degassing device and a heat exchanger are provided in an anode chamber liquid circulation system.
JP5905982A 1982-04-08 1982-04-08 Method and device for diaphragm electroplating Granted JPS58177487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5905982A JPS58177487A (en) 1982-04-08 1982-04-08 Method and device for diaphragm electroplating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5905982A JPS58177487A (en) 1982-04-08 1982-04-08 Method and device for diaphragm electroplating

Publications (2)

Publication Number Publication Date
JPS58177487A true JPS58177487A (en) 1983-10-18
JPH0118998B2 JPH0118998B2 (en) 1989-04-10

Family

ID=13102390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5905982A Granted JPS58177487A (en) 1982-04-08 1982-04-08 Method and device for diaphragm electroplating

Country Status (1)

Country Link
JP (1) JPS58177487A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992021794A2 (en) * 1991-05-30 1992-12-10 Sikel, N.V. Electrode for an electrolytic cell, use thereof and method using same
KR20010069918A (en) * 2001-05-18 2001-07-25 이수재 Plating apparatus
JP2013082996A (en) * 2011-09-29 2013-05-09 Almex Pe Inc Continuous plating apparatus
WO2015008564A1 (en) * 2013-07-18 2015-01-22 ペルメレック電極株式会社 Continuous manufacturing method for electrolytic metal foil and continuous manufacturing device for electrolytic metal foil

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992021794A2 (en) * 1991-05-30 1992-12-10 Sikel, N.V. Electrode for an electrolytic cell, use thereof and method using same
KR20010069918A (en) * 2001-05-18 2001-07-25 이수재 Plating apparatus
JP2013082996A (en) * 2011-09-29 2013-05-09 Almex Pe Inc Continuous plating apparatus
WO2015008564A1 (en) * 2013-07-18 2015-01-22 ペルメレック電極株式会社 Continuous manufacturing method for electrolytic metal foil and continuous manufacturing device for electrolytic metal foil
JP2015021154A (en) * 2013-07-18 2015-02-02 ペルメレック電極株式会社 Method and apparatus for continuous product of electrolytic metal foil

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